INTEGRATED CIRCUIT TOSHIBA TECHNICAL DATA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62783AP, TD62783F, TD62783AF TD62784AP, TD62784F, TD62784AF SILICON MONOLITHIC 8CH HIGH-VOLTAGE SOURCE DRIVER ‘The TD62783AP/F/AF Series are comprised of eight source current Transistor Array. ‘These drivers are specifically designed for fluorescent display applications. Applications include relay, hammer and lamp drivers. FEATURES. © High output voltage Type-AP, AF Type-F Vee Output clamp diodes Single supply voltage Input compatible with various types of logic © Package Type-AP —: DIP-18pin © Package Type-F. AF : SOP-18pin TYPE DESIGNATION TD627E3AP TFTA [TTL, 5V CMOS TD62784AP/F/AF [6~15V PMOS, CMOS PIN CONNECTION (TOP VIEW) De) >] De] De) [a] Fa) Da] FB TAMMIE TEE ee wT Re Vcc =50V MIN. 5V MIN. Output current (single output) IQUT= - 500mA MIN, TOR27ERAP, pipr8-P-3000 oe2783F TO62783AF 062788 TOe27AAAE s0p18p.375 ‘Weight DIPTS-P-300D : 1.479 (Typ. SOP18-P-375 : 0.41g (Typ. SCHEMATICS (EACH DRIVER) vec rosi7e int xo (Note) The input and output parasitic diodes cannot be used as clamp diodes. TD62783AK 1995 — 5-29 he TOSHIBA CORPORATIONINTEGRATED CIRCUIT TD62783AP, TD62783F, TD62783AF TOSHIBA TD62784AP, TD62784F, TD62784AF TECHNICAL DATA ‘MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RaTiNG — | UNIT Supply Voltage AP AFS vec 2 v Output Current Tour =500_ mae Vin (Note 1) 15 Input Voltage ve ete 2) 2 v (Clamp Diode Reverse [ AP, AF 50 Voltage F YR 35 ¥ (Clamp Diode Forward Current E 500 mA AP 1.47 Power Dissipation FFT] PO (Note 3) eo w (Operating Temperature Tope a0~85__| °C Storage Temperature Taig =55~150_| (Note 1) Only TD62783AP/F/ AF (Note 2) Only TD62784AP /F/ AF (Note 3) Delated above 25°C in the proportion of 11.7W/°C (AP Type), 7.7W/°C (F, AF Type). RECOMMENDED OPERATING CONDITIONS (Ta = ~ 40~85°C) (CHARACTERISTIC SYMBOL] TEST CONDITION | MIN. | TYP. | MAX. | UNIT PAF = == Ts0 supply Voltage a = ={=t aly — | — |-260 —|— | -s Output current tour are scircvits | ~ | — |-180 Duty =50% Ar F scirits | ~ | — | -8 input TORDTESAPTFTAF| = =T=T2r, Voltage Tosa7eaar/f/ar| YIN = =e Ouiput| TD627ESAP/ FAL = 20 [50 [15 imouto Oe BER ETAE| in (oN) = Sette] y Voltage| output] 10627834P/ F/AF | = o| — | os oft [Toe2784aP/F/AF|¥IN (OFF) = of — 2.0 Clamp Diode Reverse AP = == s0 Voltage FAF| YR = = [= 35} Clamp Diode Forward Current | Tp = == avo ma a = = [= Tas Power Dissipation A tp = = {=f eet w TOSHIBA CORPORATIONINTEGRATED CIRCUIT TD62783AP, TD62783F, TD62783AF TOSHIBA TD62784AP, TD62784F, TD62784AF TECHNICAL DATA ELECTRICAL CHARACTERISTICS (Ta = 25°C) characteristic |symBou len TEST CONDITION sain. | tye, | max. | UNIT Output Leakage Current lex | 1 — | — | 100] ua == T20 Output Saturation Voltage |Vce (sat)| 2. [Vin=Vin (ON). lour =p] 13] v Viv=Vin con). lout = = |= 8 ‘TD62783AP /F/ AF — 36 52 Input =| 130- [260 Current incon) | 3 =f 32 {130} “* TO62784AP/F/AF = {2 | TD62TESAPIFIAF == [20 Input [TOea7B#a TF7AE|INCON)| SS S3 Voltage [TD62783AP/F/AF M 08 = = v TDe27eaAPTFTAF|YIN(OFF)) — |louT= 500A st Supply Current Tecrom) 3 |Vin= Vin (ony, Veo =50V 35 jmATch| Clamp Diode [AP-AF| , Va =50V == Reverse Current F R 5 WVp=35v = P= | so] “* R amp Bide Forward ve | 6 lieeasoma on ee TTurn-On Delay ton_| > [Wee=Vee max Ar=r5m | — [ows | — Turn-Off Delay tOFF CL=15pF, RL=880 (F) —Tast— TOSHIBA CORPORATIONINTEGRATED CIRCUIT TD62783AP, TD62783F, TD62783AF TOSHIBA TD62784AP, TD62784F, TD62784AF TECHNICAL DATA TEST CIRCUIT 1. Icex 2. Vee (sat) r= a a 3. IN (ON). Ice 4. VIN (ON). VIN (OFF) Mee ve Fo 4 ¥in om. Vn OFF) hour 5. IR 6. Ve Yee oven Te rt b i i 7. ton, torr raise Tor : nis You (Note 1) Pulse width 50, duty gle 10% Output impedance 502, ty Sns, tf 10ns (Note 2) C_ includes probe and jig capacitance TOSHIBA CORPORATIONINTEGRATED CIRCUIT TOSHIBA TECHNICAL DATA TD62783AP, TD62783F, TD62783AF TD62784AP, TD62784F, TD62784AF CurPUT CURRENT tour (oa) ‘ourrur context tour (4) jour - in lout ~ Vin so so asase tp. 2 wl x Bm i \ 5 i at { ta a INPUT VOLTAGE vin INPUT VOLTAGE vin tw = in ln = Vin 2 - zou a Bo | TASDEDAPIFIAE . ‘aea8n AF reste 1 en a $ a INPUT VOLTAGE vi INPUT VOLTAGE vn) lout - Vee (at) ip Ve reo Ta=28Cfp. 06 Zz os Ivec=Veel>5v $ / 5 g : J i ob UV L y oa se a ee (OUTPUT SATURATION VOLTAGE Vee a) DIODE FORWARD VOLTAGE vp TD62783AN 1995 5 — 29) TOSHIBA CORPORATIONA Oncol | TDg27eaaP, 1De278aF, TD627B4AF TOSHIBA TECHNICAL DATA . . Pp - Ta © “woe? Free Air 2 sypet Free Ae 4 FOWER OSSPATION Pp WH) 1 * . 7 w AMBENT TEMPERATURE. Te. COINTEGRATED CIRCUIT TD62783AP, TD62783F, TD62783AF TOSHIBA TD62784AP, TD62784F, TD62784AF TECHNICAL DATA OUTLINE DRAWING pipia-p.3000 Ut: 1 % Boo oS g 38 | = 2, Serer eres 3 Weight : 1.479 (Typ)INTEGRATED CIRCUIT TD62783AP, TD62783F, TD62783AF TOSHIBA TD62784AP, TD62784F, TD62784AF TECHNICAL DATA OUTLINE DRAWING soP18-P-375 18 HA Unit + mm LAZTYP, lJ 1.27 13.0MAX. 12.530.2 | emetic ao ri 39 roto CU CUA = g 8 rj Weight : 0.41g (Typ.)