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9500 Scanning Microwave Microscopy Mode Users Manual
9500 Scanning Microwave Microscopy Mode Users Manual
Microscopy Mode
User’s Guide
Read This First
Safety Considerations
- General - This product and related documentation must be
reviewed for familiarization with these safety markings and
instructions before operation.
This product is a safety Class I instrument (provided with a
protective earth terminal).
- Before Applying Power - Verify that the product is set to match
the available line voltage and the correct fuse is installed. Refer
to instructions in Chapter 3 for Facility Requirements in the
instrument’s User’s Guide Manual.
- Before Cleaning - Disconnect the product from operating
power before cleaning.
- Safety Earth Ground - An uninterrupted safety earth ground
must be provided from the main power source to the product
input wiring terminals or supplied power cable.
Specifications
Environmental Conditions
Temperature (Operating): 5 to 40 °C
Temperature (Non-operating): -40 to 70 °C
Relative Humidity (Operating): 15 to 95 % non-condensing
Altitude: 2000 m
Power Requirements
100/120/220/240 VAC, 50/60 Hz
Mains supply voltage fluctuations are not to exceed 10 % of the
nominal supply voltage.
Power Supply
It is not necessary to open the Keysight AFM Controller to make
changes to the power supply. However, the power cord should
always be unplugged before making any adjustments to the
power source. The Keysight SPM Controller has several different
power supply options.
Disclaimers
This User’s Guide, as well as the hardware herein described, is
licensed and can only be used in compliance with such terms and
agreements as entered in by Keysight Technologies. Users of
these products understand, except where permission is given by
Keysight Technologies by said license, no part of this manual may
be copied, transmitted, stored in a general retrieval system, in any
form or means, electronic, or mechanical, without prior written
permission of Keysight Technologies. Information contained
herein this User’s Guide is for general information use only.
Information is subject to change without notice. Information
should not be construed as a commitment by Keysight
Technologies. Furthermore, Keysight Technologies assumes no
responsibility or liability for any misinformation, errors, or general
inaccuracies that may appear in this manual.
Declaration of Conformity
Contact Information
Keysight Technologies
4330 W. Chandler Blvd., Chandler, Arizona 85226-4965 U.S.A.
Tel: +1.480-756-5900 Fax: +1.480-756-5950
E-mail: AFM-info@keysight.com Web: www.keysight.com
Technical Sales
Tel: +1.480-756-5900
Fax: +1.480-756-5950
E-mail: AFM-info@keysight.com
I Index
Keysight Scanning Microwave Microscopy Mode
User’s Guide
1
Introduction to Scanning Microwave
Microscopy Mode
Overview of Keysight Scanning Microwave Microscopy (SMM)
Mode 2
Scanning Impedance Microscopy 3
Scanning Capacitance Microscopy 4
Vector Network Analyzer 5
Mechanical Design 5
Scanning Microwave Microscopy Mode 6
Spectroscopy with Scanning Microwave Microscopy
Mode 7
Mechanical Design
To take full advantage of the VNA-based measurement scheme,
Keysight’s SMM Mode incorporates several innovations into the
AFM hardware. These include a sophisticated microwave shielding
2
Keysight SMM Mode Components
and Setup
Probes 9
Nose Cone Assembly 10
Vector Network Analyzer 11
SMM Hardware and Software Installation Guidelines 12
Parts List for Installation 12
Cabling Configuration 13
SMM Mode Setup 14
PnaSvr Application Installation 14
NanoNavigator Software Configuration 15
Advanced PNA Settings 15
Software Troubleshooting 16
Probes
The SPM measurements for imaging are accomplished using a tip
at the free end of a cantilever (a “probe”). Typically, AFM
cantilevers are fabricated from silicon or silicon nitride with an
integrated sharp tip at the end. The selection of probe and tip
geometry, cantilever spring constant, and cantilever resonance
frequencies will vary depending on application, type of sample
surface, imaging environment, and type of image being
generated. Tip geometry may be tetrahedral, pyramidal or conical.
Tip sharpness, defined by radius of curvature and sidewall angles,
greatly affects the resolution available with the probe.
The SMM nose cone cannot be heated above 180 degrees Celsius.
C A U T IO N
These notes assume the VNA is running Windows XP SP2 and the
NOTE
User has Administrator privileges. Other operating systems could
require different procedures.
Cabling Configuration
The diagram in Figure 6 shows the cabling configuration needed
for SMM Mode installation. This cabling is in addition to standard
SPM system configuration.
- The router connection uses standard Cat5 or better Ethernet
cables connected to a common router. The router may be
uplinked to company network for wider access. The router is
connected to the computer and PNA Ethernet ports. Any of the
ports 1 through 4 may be used.
- The microwave connection uses the cable with SMA
connectors (Keysight PN N9546-60201 or Rosenberger PN
70B-32S1-32S1-01829).
Software Troubleshooting
If NanoNavigator cannot establish communication with the PNA,
the following steps may prove useful.
1 Make sure the PNA is turned on and it is on the network.
2 Verify the IP address and port number recorded in step 9 of
"PnaSvr Application Installation" and entered in step 2 of
"NanoNavigator Software Configuration".
3 Make sure the PnaSvr application on the VNA is run by a user
with administrative rights.
4 The following reference may also be of use:
http://na.tm.keysight.com/pna/help/PNAWebHelp/Programm
ing/Learning_about_COM/Configure_for_COM-DCOM_Progra
mming.htm
If additional assistance is needed, please contact
afm-support@keysight.com.
3
Sample Preparation for Dopant
Profiling
Equipment, Chemicals and Supplies 18
Polishing 18
Polishing Procedure 19
Polishing 18
Oxidation 21
Final Finish 21
* 1.Pawlik, M., "Spreading Resistance: A Quantitative Tool for Process Control and
Development," J. Vac. Sci. Technol. B 10 388-396 (1992).
2.Zavyalov, V.V., McMurray, J.S., and Williams C.C., "Advances in Experimental
Technique for Quantitative Two Dimensional Dopant Profiling by Scanning
Capacitance Microscopy," Rev. Sci. Inst., 70 (1), 158 (1999).
3.Stangoni, M. V., "Scanning Probe Techniques for Dopant Profile
Characterization," Ph.D. Thesis, ETH, Zürich, iss. number 16024 (2005).
Sample Preparation for Dopant Profiling 3
Polishing
Polishing is only necessary for dopant profiling on cross-sections
or beveled samples. If top surface imaging is needed, the sample
may already be smooth enough for measurements. However, if
the top surface has a thick oxide or a poor oxide, it may be
necessary to remove it and reoxidize the surface for optimal
imaging.
The oxide may be removed by dipping the sample in a buffered HF
(BHF or BOE) solution such as 10:1 DI H20:BHF. BHF/BOE is
available from any chemical vendor serving the microelectronics
industry. Etch rates will depend on the type of oxide being etched.
For thermal oxides, 10:1 BHF etches at approximately 90 to
* http://www.co2clean.com/afm.htm
Polishing Procedure
Wet the wheel surface with some water and place the lapping film
on the polishing wheel. Use the rubber squeegee to squeeze out
the water underneath the lapping film. This will leave a very thin
layer of water to hold the lapping film in place.
Place the silicon sample in the sample holder, attach the sample
holder to the polishing chuck, and place it over the polishing
wheel. Typical total polishing times for each step is from tens of
seconds to about a minute using a ~85 gm polishing chuck on a
~2 mm x 2 mm sample.
1 Lower the chuck onto the surface of the 30 μm diamond
lapping film while rotating at 50 rpm under DI water flow.
Polish deep enough to produce a flattened surface over the
entire region of interest. Remove the chuck, and rinse the
sample with DI water to remove any polishing grit. Check the
result with the optical microscope.When satisfied, remove the
lapping film and replace it with a film with a 15 μm particle
size, then go to step 2.
2 Lower the chuck onto the surface of the 15 μm diamond
lapping film at 50 rpm under DI water flow rotated by 10
After any polishing step, one may wet the sample surface with DI
water and rub it with a Q-tip or texwipe to remove any diamond
particles that might have dislodged from the lapping film. This will
insure the next polishing step with a finer grit will not have
residual diamond particles that could scratch the surface.
Also, note that if you are looking at a large area of devices,
occasional large scratches need not be removed, as there are
many locations away from the particular scratch where the
imaging can be performed.
Oxidation
The next step is to improve the oxide layer on the polished
surface, beyond the oxide that was formed during the final rinse
step. For non-polished samples, this oxidation step may be
performed directly after the oxide removal using the 10:1 DI
H20:BHF solution discussed in the “Polishing” section, or after the
oxidizing rinse solution is applied.
Final Finish
Several researchers have found CO2 snow-jet cleaning to be an
effective way to render consistent samples for SCM and SMM. We
recommend a final clean with such a method, as well as a
touch-up clean if the sample gets dirty or sits in air for several
days or more. The CO2 cleaning uses a specially designed nozzle
fitted to a standard ultra-high purity CO2 tank with about 850 psi
4
Imaging in SMM Mode
Setting Up the Scanner Assembly 23
Inserting the Universal Nose Cone 24
Removing the Universal Nose Cone 26
Inserting a Probe in the Universal Nose Cone 28
Inserting the Scanner and Connecting Cables 29
Setup for Optional dC/dV Controller Module (DPMM) 34
Software Setup for SMM Mode 36
Determine Frequency for Microwave Signal 36
Settings for Optional dC/dV Controller Module 39
Push evenly and straight down when inserting the nose assembly
C A U T IO N
and be sure the pins are aligned with the sockets.
5 Once the nose assembly is clear of the scanner you can remove
it from the tool.
Do not remove set screw. Only loosen enough to allow probe to fit
C A U T IO N
under clip.
8 Plug the free end of the Low Loss Cable from the nose
assembly to the T Connector as shown in Figure 18.
Set the voltage on dC/dV power supply FIRST. Set one voltage to
C A U T IO N
5 V and the second voltage to 7 V.
5 Connect the signal cable from the DPMM Module to the Basic
Inputs, AUX 1 BNC on the front of the AFM Controller, using the
supplied BNC-to-SMB cable.
.
9 After the peak position has been defined by the markers, type
the marker positions into the Start and End Frequency text
boxes.
10 Click Begin Sweep to repeat the frequency over this reduced
range. A typical result is shown in Figure 28
Troubleshooting
- Samples are usually grounded. If it is not grounded and the
image is not stable, try to ground the sample.
- If there does not appear to be good contrast for the PNA or
dC/dV images, try a different peak to determine the frequency
for the microwave signal.
5
Calibrated Imaging with SMM Mode
Capacitance Calibration 44
Capacitance Calibration Standard 44
SMM Imaging of the Calibration Standard 45
Calculating the Capacitance Signal 50
Calibrating the Capacitance Measurement 53
Cleaning the Capacitance Standards 55
Dopant Profile Calibration 56
Dopant Profile Calibration Standards 56
SMM dC/dV Imaging of the Calibration Standard 57
Calibrating the Dopant Measurement 70
Applying the Calibration to Unknown Samples 73
Cleaning the Dopant Profiling Standards 73
This chapter outlines the steps to calibrate the SMM setup for
quantitative capacitance and dopant imaging. Quantitative
measurements require a calibration standard for capacitance and
two standards, p and n-type, for dopant imaging. These standards
are imaged in SMM mode and are used to calibrate the system.
Capacitance Calibration
The capacitance calibration procedure requires SMM imaging of a
calibration standard, data processing using PicoImage to
determine the capacitance signal and background values,
calibrating the capacitance in PicoView, and finally quantitative
SMM capacitance imaging in PicoView.
with AFM can be different from the nominal values due to surface
contamination or other unknown reasons. A cross-section of a
calibration standard is shown schematically in Figure 34.
Begin imaging:
1 In the Realtime Images window, choose to display Topography
and PNA Amplitude with 1st order Flatten for each image.
2 Typical Setpoint values are between 1 to 3 V.
3 Set the scan speed from 0.7-1 ln/s.
4 The scan area should be between 50 - 70 μm.
5 In the PNA Sweep window:
a IFBW (Intermediate Frequency bandwidth) is typically set to
500-700 Hz.
b The Power Level is set to ~7 dBm.
In the Topography image (left in Figure 38), the various gold pads
can be observed on the four different steps of the staircase
structure, ranging from 200 nm to 50 nm in height. In the PNA
amplitude image (right on Figure 38), continuous and
homogeneous electrical tip-sample contact is observed on the
gold pads. The various colors indicate different PNA amplitude
values, corresponding to different capacitance values.
The diameter of the gold pads and the step heights of the
NOTE
dielectric staircase structure can vary from sample to sample.
Accordingly they should be measured for each calibration
procedure using the topographical image.
expose the thin layers side by side in the cross section. The
calibration standard is mounted vertically by gluing it on a
conductive gold plate or putting it in a mini-bench vice as shown
in Figure 46 right panel.
1 Position the SMM probe over the edge of the sample as shown
in Figure 47.
2 Start scanning with a small scan size.
The n-type standard requires 70 μm scans while for the p-type
standard 5 μm are required.
3 Optimize the scan area according to the specific sample and
approach the tip carefully towards the edge during imaging.
For the 5600 this can be done by changing the X Offset in the
stage controller box (Figure 47, encircled in red). For the 5400 and
5500 bring the tip close to the edge of the sample through a
combination of scan offset and manually moving the sample
plate.
n-Type Standard
On the n-type calibration standard, Layer 2 and Layer 3 have
dopant concentrations that are close to each other. It is important
to optimize the parameters such that Layers 2 and 3 show
different dC/dV signals. Layer 3 must have a higher dC/dV signal
than Layer 2 because a lower the dopant density will have a larger
dC/dV signal. Non-optimal parameter settings might result in
non-monotonic behavior of the dC/dV vs dopant concentration
plot. Use the cross-section profile of the dC/dV Amplitude to
check for non-monotonic behavior. For proper calibration,
imaging parameters should be selected in order to show a
monotonic calibration curve.
Table 1 details the dopant density in atoms/cm³ of different layers
for the calibration standards used. The layers are illustrated in the
specification sheet for the n-type standard shown in Figure 50.
PNA Frequency
After approaching the cantilever to the sample, the PNA
frequency is adjusted using the PNA sweep in the Keysight PNA
Controls window.
1 Sweep the PNA and obtain an Amplitude [dB] vs. Frequency
[GHz] spectrum from 1-20 GHz as depicted in Figure 51 on
page 64 (left).
2 Select a resonance minimum and adjust the PNA frequency at
a point near a resonance minimum (Figure 51, right).
Figure 51 Left: PNA sweep from 1-20 GHz (PNA amplitude top
and PNA phase bottom). Right: PNA sweep for selecting a
single resonance minimum (top is PNA amplitude and bottom
is PNA phase).
AC Drive
DC Tip Bias
For n-type samples, positive values of the DC Tip Bias are used
(e.g. 0 V to 3 V), while for p-type samples negative values are
used (e.g. 0 V to -3 V).
7 Be sure that the bias is set to the Tip (and not to sample) in the
Servo dialog box under Advanced tab (Apply bias to tip).
8 Optimize the DC Tip Bias using 0.1 V steps to get good
contrast between different layers of dopant concentrations
while monitoring the Real Time cross-section profile to find the
best results in the dC/dV signal.
Figure 54 shows the dC/dV Amplitude image at different tip
biases acquired at 17.608 GHz. In this case the tip bias was
changed from 2 V to 3.5 V.
p-Type Standard
For the p-type standard sample, a scan area of about 5 μm is
recommended. Figure 55 on page 68 shows the dopant steps on
the p-type standard named Layer 1 (highest dopant density,
9.1x1019 atoms/cm³) to Layer 4 (lowest dopant density,
8.8x1016 atoms/cm³). The dopant values for the layers are given
in Table 1 on page 63.
PNA Frequency
AC Drive
6 Change the AC Drive between 10 % and 30 % while monitoring
the Real Time cross-section profile to find the AC Drive which
results in the best dC/dV signal.
DC Tip Bias
For p-type samples, negative values are used (e.g. 0 V to -3 V) for
DC Tip Bias.
7 Be sure that the bias is set to the Tip (and not to sample) in the
Servo dialog box under Advanced tab (Apply bias to tip).
8 Optimize the DC Tip Bias using 0.1 V steps to get good
contrast between different layers of dopant concentrations
while monitoring the Real Time cross-section profile to find the
best results in the dC/dV signal.
The mean values of the dC/dV Amplitude are plotted with respect
to the dopant levels from the dopant calibration standard
specification sheet. Calibration curves for the n-type and p-type
standard samples are shown in Figure 58.
Appendix A
Capacitance Standard
Specifications
Specifications 77
Specifications
The diameter, area and thickness specifications are tabulated
below. The diameters are for the bottom of the contact pad where
the electrical contact is located.
Contact Pad 1 μm 2 μm 3 μm 4 μm
Diameter
Error in diameter ± 0.01 μm ± 0.01 μm ± 0.01 μm ± 0.01 μm
Error in area (μm2) 0.785 ± 4.0 % 3.142 ± 2.0 % 7.069 ± 1.3 % 12.566 ± 1.0 %
Index
A N
Atomic Force Microscope, 1 NanoNavigator, 15
nose assembly, 10
removal, 27
C nose cone, 8
cables, 26
cabling configuration, 13 P
cantilever, see probes
capacitance, 2, 3, 8, 11 performance network analyzer, 11
cleaning, snow-jet, 21 PNA, 11, 15
complex reflection coefficient, 2 settings, 15
Contact Mode, 1 probe, 2, 9
platinum-iridium, 10
D R
dC/dV, 3, 4, 6, 41
Realtime Images window, 48
dC/dV controller module, 8, 34
reflection, 11
device under test (DUT), 3, 11
reflection mode, 5
dielectric constants, 2
router connection, 13
dopant density, 2
DPMM module, 8, 39
DUT, see device under test S
sample preparation, 17
E final finish, 21
oxidation, 21
ECal kit, 4 polishing, 18, 19
electromagnetic properties, 2 supplies, 18
scanning capacitance microscopy, 2, 17
scanning microwave microscopy, 1, 2, 17, 23
I Scanning Probe Microscope, 1
scanning tunneling microscopy, 2
impedance, 2, 3, 5, 8, 11
SCM, see scanning capacitance microscopy
installation
hardware needed, 12 SMM mode, 2, 3, 5, 6, 8
nose assembly, 23
setup, 14
L spectroscopy, 7
SMM, see scanning microwave microscopy
lock-in amplifier, 3, 6 software troubleshooting, 16
M T
microwave frequencies, 6 transmission, 11
microwave shielding, 5, 10, 23 transmission mode, 5
V
vector network analyzer, 11
VNA, 2, 5
VNA, 3, 11
W
wiring, 26
*N9546-90002*
N9546-90002
www.keysight.com