EE 315 Homework 6 Due Thursday, March 24, 2022 Submit your solutions as @ pdf file in Canvas. 1. A particular MOSFET for which Vin = 0.4 V and &,(W/L) = 2 mA/V'is to be operated in the saturation region. If ip is to be 50 A, find the required vgs and the minimum required vps. Repeat for ip = 200 uA. qo Ski ly F + he (2) Vow Voy = lp % ankyr Tf ig Dy = .05RA Vou = fe =, 2THV > Vee Ve > Ves = 44.2036 = .6230V ¢ Vog __ = Nov = + 2236V ZF ly * 200nk= aA Vov =f = uya2Vv a DLhmrmr™—~—~—~—~™ Ves = Vor = 4472V man2, A particular n-channel MOSFET is measured to have a and of 160 HA at vas = vps = 0.8 V. What are the valu rent of 360 HA at vas = ups =1V V, for this device? Vos = 18> Veg Ve = 18 —Vp D> mn Saburbion 2 in= hb vee A, (Ves —Ve) 260na = ke (\-4) - \GouA = 4 dn (8 -%e) oO te be(1-Ve)- M0 “UK wy 9 (e-v,) = y(ieve)y 9(.64- Love+y,?) - u(1-2¥etVe") =O SMa" ~G.UVE EL FG FO Ve =.B8V oor e6GVW~—_ This Cannot 2 cote ce wil be of F Bom A> Ie he (i-.8y4. Design the circuit below to establish a rain current of O.1 mA and a drain veltage of +02 V. The MOSFET hes + vi=02V © inCox = 400 wA/V? G + 4 “ies av Specify the required values for Rs and Ro. caw Ves = O-Ve = Ve so J = iv yt Ve Msn) _ ve Fie be ee by Ee -lv ois =A Sk In scburdin or triode? Vos @ Ves ~Ve i — ave G) Vg 22 > be 2 w\y* ip 2 4 (Me A E) Vo A = Vor DU ae = 0625 Vov =. 25V (4 mite) = Vos -Ve WVes = 254.25 HSV Vg = 7 4SY Re7 LEE 2 ssn a 34 Ibis required to operate the transistor in the circuit below at the edge of saturation with Ip = 50 yA. If Vj =04 V, find the required value of Rp. Nps 7 1-2-0 =L2V +av Ry Vos = Vp Vp Vie Vea Ve cd 2 ey Ak edge of seduwhom — Vg =Vor =+8V = Vp 1 2-Vp “uv 7 eee > Y= gen [ Re sDuh 2 Ry5. The PMOS transistor in the circuit below has Vi = —0.5 V, jipCoe = 100 wA/V?, and L = 0.18 jun Find the values required for W and R in order to establish’ a drain current of 160 A and a voltage diode connected” Dn, Vpp = 1.8V Sedwredi on Vor = Vso “Wap! Dp La Vie Vp = IV Vor * 1S 2S = Vo Vv; Vv T, =~ ape We. 8 > ck | 8 Re oe, a r mr hay (Z) vy 2 bond = (m4) ) lsv) > 2.3 ym TE pen6. The NMOS transistors in the circuit below have Vj = 0.5 V, jinCox = 200 4A/V2, and L1 = 12 = 23 = 05 yin. Find the required gate width for each of Qi, Qz, and Qs to obtain the voltage end current values indicated. . ” “diode connect" > sahucht vasy $90n4 Qa 2 Qli vg = 18-0 =.ev Vor = Veg-V, = - 8-5 =.3V bo a ae = : wi Fuk (2co.my)( (7) >We Sum Ves = 5-18 =.7V Vo > .#-,5 = .2V . Ww; 2 : ook (2w.0hy»)( =) (2% D> Wy 25m Vos * 2S-USEV Ve = ln 7.5V Fn Yn ( 200.442)( 2) (sv) DW, = Qr" Q3s Laon