IRF300P227

IR MOSFET - StrongIRFET™

D VDSS 300V
RDS(on) typ. 33m
G

Applications max 40m

 UPS and Inverter applications
S ID 50A
 Half-bridge and full-bridge topologies
D
 Resonant mode power supplies
 DC/DC and AC/DC converters
 OR-ing and redundant power switches
S
 Brushed and BLDC Motor drive applications G D
 Battery powered circuits TO-247AC
IRF300P227

Benefits
G D S
 Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Gate Drain Source
 Fully Characterized Capacitance and Avalanche SOA
 Enhanced body diode dv/dt and di/dt Capability
 Pb-Free ; RoHS Compliant ; Halogen-Free

Standard Pack
Base part number Package Type Orderable Part Number
Form Quantity
IRF300P227 TO-247AC Tube 25 IRF300P227

125 60
RDS(on), Drain-to -Source On Resistance (m )

I D = 30A

105
45
ID, Drain Current (A)

85
TJ = 125°C

65 30

45
TJ = 25°C
15
25

5 0
2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175

VGS, Gate -to -Source Voltage (V) TC , Case Temperature (°C)

Figure 1 Typical On-Resistance vs. Gate Voltage Figure 2 Maximum Drain Current vs. Case Temperature

Final Datasheet Please read the important Notice and Warnings at the end of this document V2.0
www.infineon.com 2017-11-14
IR MOSFET-StrongIRFET™
IRF300P227
Table of Contents

Table of Contents
Applications …..………………………………………………………………………...……………..……………1
Benefits …..………………………………………………………………………...……………..…………….1
Ordering Table ….……………………………………………………………………………………………………1
Table of Contents ….………………………………………………………………………………………………...2
1 Parameters ………………………………………………………………………………………………3
2 Maximum ratings, Thermal, and Avalanche characteristics ………………………………………4
3 Electrical characteristics ………………………………………………………………………………5
4 Electrical characteristic diagrams ……………………………………………………………………6
Package Information ………………………………………………………………………………………………14
Qualification Information ……………………………………………………………………………………………15
Revision History …………………………………………………………………………………………..…………16

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Parameters

1 Parameters

Table1 Key performance parameters

Parameter Values Units
VDS 300 V
RDS(on) max  40 m
ID 50 A

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Maximum ratings and thermal characteristics

2 Maximum ratings and thermal characteristics

Table 2 Maximum ratings (at TJ=25°C, unless otherwise specified)

Parameter Symbol Conditions Values Unit
Continuous Drain Current ID TC = 25°C, VGS @ 10V 50
Continuous Drain Current ID TC = 100°C, VGS @ 10V 35 A
Pulsed Drain Current  IDM TC = 25°C 189
Maximum Power Dissipation PD TC = 25°C 313 W
Linear Derating Factor TC = 25°C 2.1 W/°C
TJ = 175°C, IS = 20A,
Peak Diode Recovery  dv/dt 6.0 V/ns
VDS = 150V
Gate-to-Source Voltage VGS - ± 20 V
Operating Junction and TJ
Storage Temperature Range TSTG - -55 to + 175
°C
Soldering Temperature, for 10 seconds
- - 300
(1.6mm from case)
Mounting Torque, 6-32 or M3 Screw - - 10 lbf·in (1.1 N·m) -

Table 3 Thermal characteristics

Parameter Symbol Conditions Min. Typ. Max. Unit
Junction-to-Case  RJC TJ approximately 90°C - - 0.48
Case-to-Sink, Flat Greased Surface RCS - - 0.24 - °C/W
Junction-to-Ambient RJA - - - 40

Table 4 Avalanche characteristics

Parameter Symbol Values Unit
Single Pulse Avalanche Energy  EAS (Thermally limited) 455
mJ
Single Pulse Avalanche Energy Tested Value  EAS (tested) 451
Avalanche Current  IAR A
See Fig 16, 17, 23a, 23b
Repetitive Avalanche Energy  EAR mJ

Notes:
Repetitive rating; pulse width limited by max. junction temperature.
 Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 30A, VGS =10V.
ISD  20A, di/dt  1000A/µs, VDD V(BR)DSS, TJ  175°C.
Pulse width  400µs; duty cycle  2%.
 Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
 R is measured at TJ approximately 90°C.
 This value determined from sample failure population, starting TJ = 25°C, L= 1mH, RG = 50, IAS = 30A, VGS =10V.

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Electrical characteristics

3 Electrical characteristics
Table 5 Static characteristics
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1mA 300 - - V
Breakdown Voltage Temp. Coefficient V(BR)DSS/TJ Reference to 25°C, ID = 1.0mA  - 0.12 - V/°C
Static Drain-to-Source On-Resistance RDS(on) VGS = 10V, ID = 30A - 33 40 m
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 270µA 2.0 - 4.0 V
VDS = 240V, VGS =0V - - 10
Drain-to-Source Leakage Current IDSS µA
VDS = 240V,VGS = 0V,TJ =125°C - - 300
Gate-to-Source Forward Leakage IGSS VGS = 20V - - 100 nA 
Gate Resistance RG - 2.7 - 

Table 6 Dynamic characteristics

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Forward Trans conductance gfs VDS = 50V, ID =30A 62 - - S
Total Gate Charge Qg - 71 107
Gate-to-Source Charge Qgs ID = 30A - 28 -
VDS = 150V nC
Gate-to-Drain Charge Qgd VGS = 10V - 13 -
Total Gate Charge Sync. (Qg– Qgd) Qsync - 58 -
Turn-On Delay Time td(on) VDD = 150V - 16 -
Rise Time tr ID = 30A - 43 -
ns
Turn-Off Delay Time td(off) RG = 2.7 - 51 -
Fall Time tf VGS = 10V - 28 -
Input Capacitance Ciss VGS = 0V - 4893 -
Output Capacitance Coss VDS = 50V - 425 -
Reverse Transfer Capacitance Crss ƒ = 1.0MHz, See Fig.7 - 6.6 - pF
Effective Output Capacitance Coss eff.(ER) - 282 -
(Energy Related) VGS = 0V, VDS = 0V to 240V 
Output Capacitance (Time Related) Coss eff.(TR) VGS = 0V, VDS = 0V to 240V  - 485 -

Table 7 Reverse Diode

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Continuous Source Current MOSFET symbol D

IS - - 50
(Body Diode) showing the
G A
Pulsed Source Current integral reverse
ISM - - 189
(Body Diode)  p-n junction diode.
S

Diode Forward Voltage VSD TJ = 25°C, IS = 30A,VGS = 0V  - - 1.2 V

TJ = 25°C - 140 -
Reverse Recovery Time trr ns
TJ = 125°C - 199 -
TJ = 25°C VDD = 150V - 313 -
Reverse Recovery Charge Qrr IF = 30A, nC
TJ = 125°C di/dt = 100A/µs  - 811 -
TJ = 25°C - 3.1 -
Reverse Recovery Current IRRM A
TJ = 125°C - 5.5 -

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Electrical characteristic diagrams

4 Electrical characteristic diagrams

1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
7.0V 7.0V

I D, Drain-to-Source Current (A)

I D, Drain-to-Source Current (A)

6.0V 6.0V
5.5V 5.5V
100 5.0V 100 5.0V
4.5V 4.5V
BOTTOM 4.0V BOTTOM 4.0V

10 10 4.0V
4.0V

60µs PULSE WIDTH 60µs PULSE WIDTH

Tj = 25°C Tj = 175°C
1 1
0.1 1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Figure 3 Typical Output Characteristics Figure 4 Typical Output Characteristics

1000 3.2
I D = 30A
2.8
RDS(on) , Drain-to-Source On Resistance

VGS = 10V
I D, Drain-to-Source Current (A)

100 2.4

2.0
TJ = 175°C
(Normalized)

10 1.6
TJ = 25°C
1.2

1.0 0.8
VDS = 50V
60µs PULSE WIDTH 0.4

0.10 0.0
2 3 4 5 6 7 8
-60 -20 20 60 100 140 180
VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)

Figure 5 Typical Transfer Characteristics Figure 6 Normalized On-Resistance vs. Temperature

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Electrical characteristic diagrams

1000000
VGS = 0V, f = 1 MHZ
14
Ciss = C gs + C gd, C ds SHORTED
100000 Crss = C gd I D= 30A
Coss = C ds + C gd 12

VGS, Gate-to-Source Voltage (V)

VDS= 240V
10000
C, Capacitance (pF)

10 VDS= 150V
Ciss
VDS= 60V
1000 8
Coss
6
100 Crss

4
10
2
1
1 10 100 1000 0
VDS, Drain-to-Source Voltage (V) 0 10 20 30 40 50 60 70 80 90
Q G, Total Gate Charge (nC)

Figure 7 Typical Capacitance vs. Drain-to-Source Figure 8 Typical Gate Charge vs. Gate-to-Source
Voltage Voltage

1000
I SD, Reverse Drain Current (A)

100

TJ = 175°C
10

TJ = 25°C

VGS = 0V

0.1
0.0 0.4 0.8 1.2 1.6 2.0
VSD, Source-to-Drain Voltage (V)

Figure 9 Typical Source-Drain Diode Forward

Voltage

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Electrical characteristic diagrams

1000

100
I D, Drain-to-Source Current (A)

100µsec

10
1msec
OPERATION IN THIS AREA
1 LIMITED BY R DS(on) 10msec

DC
0.1 Tc = 25°C
Tj = 175°C
Single Pulse
0.01
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)

Figure 10 Maximum Safe Operating Area

360 12
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)

Id = 1.0mA

350 10

340 8
Energy (µJ)

330 6

320 4

310 2

300 0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180 0 50 100 150 200 250 300 350

TJ , Temperature ( °C ) VDS, Drain-to-Source Voltage (V)

Figure 11 Drain-to-Source Breakdown Voltage Figure 12 Typical Coss Stored Energy

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Electrical characteristic diagrams

140 4.5
RDS(on), Drain-to -Source On Resistance (m  )

VGS = 6.0V 4.0

120

VGS(th), Gate threshold Voltage (V)

VGS = 7.0V
VGS = 8.0V 3.5
100 VGS = 10V
3.0
80
2.5
I D = 270µA
60 ID = 1.0mA
2.0
I D = 1.0A
40 1.5

20 1.0
0 25 50 75 100 125 150 175 200 -75 -50 -25 0 25 50 75 100 125 150 175
I D, Drain Current (A) TJ , Temperature ( °C )

Figure 13 Typical On-Resistance vs. Drain Figure 14 Threshold Voltage vs. Temperature
Current

D = 0.50
Thermal Response ( Z thJC ) °C/W

0.1 0.20
0.10
0.05

0.01 0.02
0.01

0.001
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t 1 , Rectangular Pulse Duration (sec)

Figure 15 Maximum Effective Transient Thermal Impedance, Junction-to-Case

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Electrical characteristic diagrams

100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)

10

Allowed avalanche Current vs

avalanche pulsewidth, tav, assuming
Tj = 25°C and Tstart = 150°C.
0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)

Figure 16 Avalanche Current vs. Pulse Width

Notes on Repetitive Avalanche Curves , Figures 16, 17:

500 (For further info, see AN-1005 at www.infineon.com)
1.Avalanche failures assumption:
TOP Single Pulse Purely a thermal phenomenon and failure occurs at a
BOTTOM 1.0% Duty Cycle temperature far in excess of Tjmax. This is validated for every
400 I D = 30A part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
EAR , Avalanche Energy (mJ)

exceeded.
3. Equation below based on circuit and waveforms shown in
300 Figures 23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
200 6. Iav = Allowable avalanche current.
7. DT = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
100 D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
0 EAS (AR) = PD (ave)·tav
25 50 75 100 125 150 175
Starting T J , Junction Temperature (°C)

Figure 17 Maximum Avalanche Energy vs.

Temperature

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Electrical characteristic diagrams

50 60
I F = 20A I F = 30A
VR = 150V 50 VR = 150V
40
TJ = 25°C TJ = 25°C
TJ = 125°C TJ = 125°C
40
30
I RRM (A)

I RRM (A)
30

20
20

10
10

0 0
100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000
diF /dt (A/µs) diF /dt (A/µs)

Figure 18 Typical Recovery Current vs. dif/dt Figure 19 Typical Recovery Current vs. dif/dt

2500 3000
I F = 20A I F = 30A
VR = 150V 2500 VR = 150V
2000
TJ = 25°C TJ = 25°C
TJ = 125°C TJ = 125°C
2000
1500
QRR (nC)

QRR (nC)

1500
1000
1000

500
500

0 0
100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000
diF /dt (A/µs) diF /dt (A/µs)

Figure 20 Typical Stored Charge vs. dif/dt Figure 21 Typical Stored Charge vs. dif/dt

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Electrical characteristic diagrams

Figure 22 Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET™ Power MOSFETs

Figure 23a Unclamped Inductive Test Circuit Figure 23b Unclamped Inductive Waveforms

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Electrical characteristic diagrams

Figure 24a Switching Time Test Circuit Figure 24b Switching Time Waveforms

Figure 25a Gate Charge Test Circuit Figure 25b Gate Charge Waveform

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IR MOSFET-StrongIRFET™
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Package Information

5 Package Information

TO-247AC Package Outline (Dimensions are shown in millimeters (inches))

TO-247AC Part Marking Information

EXAMPLE: THIS IS AN IRFPE30

WITH ASSEMBLY PART NUMBER
LOT CODE 5657 INTERNATIONAL
ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30

IN THE ASSEMBLY LINE "H" LOGO 135H

56 57
DATE CODE
ASSEMBLY YEAR 1 = 2001
Note: "P" in assembly line position
indicates "Lead-Free" LOT CODE WEEK 35
LINE H

TO-247AC package is not recommended for Surface Mount Application.

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Qualification Information

6 Qualification Information
Qualification Information
Industrial
Qualification Level (per JEDEC JESD47F) †

Moisture Sensitivity Level TO-247AC N/A

RoHS Compliant Yes

† Applicable version of JEDEC standard at the time of product release.

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Revision History

Revision History
Major changes since the last revision

Page or Reference Revision Date Description of changes

All pages 1.0 2017-02-27  First release data sheet.

 Updated @ 25c =20A on Avalanche Current vs. Pulse Width fig 16 on

page10
All pages 1.1 2017-07-20  Added DV/DT = 6V/ns, Di/Dt = 1000A/us, Tjmax = 175C, VDS = 150V,
Id = 20A on page 4
 Added IRRM = 5.5A @ 125c on page 5.

All pages 2.0 2017-11-14  First release final datasheet.

Final Datasheet 16 V2.0

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Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™,
DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™,
HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™,
OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™,
SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™

Trademarks updated November 2015

Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.

Edition 2015-05-06
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
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