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  • Caracterización IV Del Transistor NMOS

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    JOAQUIN CALDERON ROSAS
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    The document summarizes simulation results of the characteristics of an NMOS transistor. It shows Ids vs. Vds curves for different values of Vgs, noting when the transistor is on and off. It also shows that decreasing the length decreases current density, while increasing the width increases current density. Finally, it concludes that Ids depends on Vds and the gate overdrive voltage.

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    Caracterización IV del transistor NMOS

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    The document summarizes simulation results of the characteristics of an NMOS transistor. It shows Ids vs. Vds curves for different values of Vgs, noting when the transistor is on and off. It also shows that decreasing the length decreases current density, while increasing the width increases current density. Finally, it concludes that Ids depends on Vds and the gate overdrive voltage.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    11 views4 pages

    Caracterización IV Del Transistor NMOS

    Uploaded by

    JOAQUIN CALDERON ROSAS
    The document summarizes simulation results of the characteristics of an NMOS transistor. It shows Ids vs. Vds curves for different values of Vgs, noting when the transistor is on and off. It also shows that decreasing the length decreases current density, while increasing the width increases current density. Finally, it concludes that Ids depends on Vds and the gate overdrive voltage.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
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    of 4

    Benemérita Universidad Autónoma de

    Puebla
    Facultad de Ciencias de la Electrónica
    Ingeniería en Sistemas Automotrices
    Diseño De Circuitos Digitales Integrados
    Caracterización IV del transistor NMOS
    Profe. Victor Rodolfo Diaz Gonzalez
    Carlos Manuel Rojo Nexticapan
    Otoño 2021
    IV Characteristics of NMOS Transistor

    • Simulation

    The gate is tied to a DC voltage source with a variable VGS, the drain the power supply of gate with
    a varible VDS and finally for W and L of the NMOS with automatic variables.

    • Ids vs. Vds curve.

    We observe for Vgs<Vth the transistor is off.

    In this case for VGS=0.9, VGS=1.35 and VGS=1.8 the transistor is on.
    • Ids vs. Vds curve (15 curves)

    We change the Length and we notice

    that density of current decreases.

    • Ids vs. Vds curve (15 curves)

    We change the Width and we notice that density of current increase.


    • Ids vs. Vgs curve.

    When Vds is small the circuit acts like voltage-controlled resisitor

    When Vds is large the circuit acts like voltage-controlled resisitorn the saturation region is entered.

    • Conclusion

    Ids is totally dependent on Vds and overdrive of the gate.

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