CMP Polish Mechanism

• Chemical Mechanism

• Polishing Mechanism
Chemical Mechanism

Hydroxylation, hydrogen bond formation between

slurry and wafer, molecular bond formation and
breakage of si-si bond by the movement of
particle
a) b)
Slurr H O H Slurr H O H
y Si y Si
O H O
H H H H H H H H H H H H H H H
O O O O O O O O O O O O O O

Si Si Si Si Si Si Si Si Si Si Si Si Si Si

c) d)
Slurr H O H Slurr H O H
y Si y Si

H H H H H H H H H H OH H H
Si
O O O O O O O O O O O O O O
H
Si Si Si Si Si Si Si Si Si Si Si Si Si
Polishing Mechanism

• Polishing Procedure by Slurry

(1) Slurry 내의 용매와 웨이퍼 표면과의 수소 결합
(2) Slurry 입자와 웨이퍼 표면의 수소 결합
(3) Slurry 입자의 moving에 의해 결합된 혼합물이 표면에서 제거

• Polishing Mechanism by Mechanical Grinding

☞ dr/dt(Mechanical Polishing Speed) = K P ds/dt
K: Preston Constant
P: Pressure
r: Thickness of Dielectric layer
ds/dt: Relative Speed between Pad and Dielectric layer
A Schematic of a CMP polisher

Wafer Polishing
Carrier Slurry
Polishing Slurry
Wafer Supply
Pad

Rotating
Platen
Total Solution of CMP Process

Slurry Distribution
System

Metrology
Cleaning Equipment (End point detection
etc.)
CMP
Process
Waste Chemical Consumables
Disposal System (Slurry, pad etc.)

CMP Equipment
CMP Explanation

★ CMP Consumables: Process Parameter Effected

 Slurry: Abrasive(SiO2/Al2O3/Ce2O3)+Chemicals
 Polish Pad: Poly-Urethan
 Conditioning Disk Grid(Diamond Grid, Conditioning Disk…)

★ CMP Process Parameters

 Slurry Type / Pad Type / Disk Grid Type

 Applied Pressure / Head & Platen RPM
 Arm Oscillation / Conditioning Down Force, RPM…
 Wafer Curvature / Chip Design
CMP Tool Comparison
Orbital Polish Mechanism