GOFORD 3401A

Description
The 3401A uses advanced trench technology to provide
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excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
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load switch or in PWM applications.

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General Features
● Schematic diagram
VDSS RDS(ON) RDS(ON) RDS(ON) ID
@4.5V (Typ) @2.5V (Typ) 10V (Typ)

-30V 58mΩ 85 mΩ 45 mΩ -4.4A

● High power and current handing capability

● Lead free product is acquired Marking and pin Assignment
● Surface mount package

Application
●PWM applications
●Load switch SOT-23-3L
●Power management

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±12 V
Drain Current-Continuous ID -4.4 A
Drain Current-Pulsed (Note 1) IDM -30 A
Maximum Power Dissipation PD 1.3 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃

Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 95 ℃/W

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 -33 - V

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GOFORD 3401A
Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V - - -1 μA
Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -0.7 -1 -1.3 V
VGS=-10V, ID=-4.2A - 45 52 mΩ
Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-4A - 58 65 mΩ
VGS=-2.5V, ID=-1A 85 120 mΩ
Forward Transconductance gFS VDS=-5V,ID=-4.2A - 10 - S
Dynamic Characteristics (Note4)
Input Capacitance Clss - 950 - PF
VDS=-15V,VGS=0V,
Output Capacitance Coss - 115 - PF
F=1.0MHz
Reverse Transfer Capacitance Crss - 75 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on) - 7 - nS
Turn-on Rise Time tr VDD=-15V,ID=-3.2A - 3 - nS
Turn-Off Delay Time td(off) VGS=-10V,RGEN=6Ω - 30 - nS
Turn-Off Fall Time tf - 12 - nS
Total Gate Charge Qg - 9.5 - nC
Gate-Source Charge Qgs VDS=-15V,ID=-4A,VGS=-4.5V - 2 - nC
Gate-Drain Charge Qgd - 3 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1A - - -1.2 V

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production

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 GOFORD 3401A
Typical Electrical and Thermal Characteristics
ton toff
tr tf
td(on) td(off)

90% 90%

VOUT INVERTED
10% 10%

90%
VIN 50% 50%

10%
PULSE WIDTH

Figure 1:Switching Test Circuit Figure 2:Switching Waveforms

ID- Drain Current (A）

PD Power(W)

TJ-Junction Temperature(℃) TJ-Junction Temperature(℃)

Figure 3 Power Dissipation Figure 4 Drain Current
Rdson On-Resistance(mΩ)
ID- Drain Current (A)

Vds Drain-Source Voltage (V) ID- Drain Current (A)

Figure 5 Output Characteristics Figure 6 Drain-Source On-Resistance

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 GOFORD 3401A

Normalized On-Resistance
ID- Drain Current (A)

Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃)

Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance
Rdson On-Resistance(mΩ)

C Capacitance (pF)

Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V)

Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds
Is- Reverse Drain Current (A)
Vgs Gate-Source Voltage (V)

Qg Gate Charge (nC) Vsd Source-Drain Voltage (V)

Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward

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GOFORD 3401A

ID- Drain Current (A)

Vds Drain-Source Voltage (V)

Figure 13 Safe Operation Area
Transient Thermal Impedance
r(t),Normalized Effective

Square Wave Pluse Duration(sec)

Figure 14 Normalized Maximum Transient Thermal Impedance

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