AON3414

30V N-Channel AlphaMOS

General Description Product Summary

• Trench Power AlphaMOS (αMOS LV) technology VDS 30V

• Low RDS(ON) ID (at VGS=10V) 10.5A
• High Current Capability RDS(ON) (at VGS=10V) < 17mΩ
• RoHS and Halogen-Free Compliant
RDS(ON) (at VGS=4.5V) < 23mΩ

Typical ESD protection HBM Class 2

Applications
100% Rg Tested
• System switch, inverter

DFN 3x3
Top View Bottom View D
Top View

S D
S D
S D G
G D
S
Pin 1

Orderable Part Number Package Type Form Minimum Order Quantity

AON3414 DFN 3x3 Tape & Reel 3000

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C 10.5
ID
Current TA=70°C 8 A
C
Pulsed Drain Current IDM 42
TA=25°C 3.1
PD W
Power Dissipation B TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 30 40 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 55 70 °C/W
Maximum Junction-to-Lead Steady-State RθJL 20 25 °C/W

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Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±16V ±10 µA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.2 1.8 2.4 V
VGS=10V, ID=9A 14 17
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 20.5 25
VGS=4.5V, ID=8A 18 23 mΩ
gFS Forward Transconductance VDS=5V, ID=9A 35 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.72 1 V
IS Maximum Body-Diode Continuous Current 4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 690 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 105 pF
Crss Reverse Transfer Capacitance 80 pF
Rg Gate resistance f=1MHz 0.5 1.1 2.0 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 15 25 nC
Qg(4.5V) Total Gate Charge 7.5 14 nC
VGS=10V, VDS=15V, ID=9A
Qgs Gate Source Charge 2.5 nC
Qgd Gate Drain Charge 3 nC
tD(on) Turn-On DelayTime 5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.67Ω, 3.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 19 ns
tf Turn-Off Fall Time 3.5 ns
trr Body Diode Reverse Recovery Time IF=9A, dI/dt=500A/µs 7.5 ns
Qrr Body Diode Reverse Recovery Charge IF=9A, dI/dt=500A/µs 11.5 nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.1.0 : June 2014 www.aosmd.com Page 2 of 5

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 30
4V
10V VDS=5V
24 3V 24
4.5V

18 18
ID (A)

ID(A)
125°C
12 12

6 VGS=2.5V 6 25°C

0 0
0 1 2 3 4 5 0 1 2 3 4 5

VDS (Volts) VGS(Volts)

Figure 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

25 1.8

Normalized On-Resistance
VGS=4.5V 1.6 VGS=10V
20
ID=9A
RDS(ON) (mΩ)

1.4
15
1.2
VGS=10V
10 VGS=4.5V
1 ID=8A

5 0.8
0 3 6 9 12 15 18 0 25 50 75 100 125 150 175

ID (A) Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)

40 1.0E+01
ID=9A
1.0E+00
30
125°C 1.0E-01
RDS(ON) (mΩ)

IS (A)

20 1.0E-02 125°C

1.0E-03 25°C
10 25°C
1.0E-04

0 1.0E-05
2 4 6 8 10 0 0.2 0.4 0.6 0.8 1

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev.1.0 : June 2014 www.aosmd.com Page 3 of 5

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
VDS=15V
ID=9A
1000
8

Capacitance (pF)
800 Ciss
VGS (Volts)

6
600
4
400

2 Coss
200

Crss
0 0
0 3 6 9 12 15 0 5 10 15 20 25 30

Qg (nC) VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 1000
TJ(Max)=150°C
10µs
10µs TA=25°C
RDS(ON)
10.0 100µs
limited
100
Power (W)
ID (Amps)

1ms
1.0
10ms
10
0.1
TJ(Max)=150°C DC
TA=25°C

0.0 1
0.01 0.1 1 10 100 1E-05 0.001 0.1 10 1000
VDS (Volts)
Pulse Width (s)
VGS> or equal to 4.5V Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe Ambient (Note F)
Operating Area (Note F)

10
D=Ton/T In descending order
ZθJA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=70°C/W

0.1

PD
0.01 Single Pulse
Ton
T
0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev.1.0 : June 2014 www.aosmd.com Page 4 of 5

 Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev.1.0 : June 2014 www.aosmd.com Page 5 of 5