switching Circuits

9,1 . . 11 . . .
s·nce d1g1ta og1c circuits consist of sw·t h .
I d' I c es which are im I
for understan 1ng, analysing, designing d . P emented using semiconductor devices,
refore, . . "f . an practical app1· r ..
~e ebasic pnnc1p 1es o working of various semi ica ions of d1g1tal systems, it is essential to
1earn th conductor devices as a switch.
Diode as a Switching Circuit
g.1,1 .
semiconductor diode can work as an ele ctrornc
. switch·
. it is 'd
A
d and in 'OFF' stage when reverse biased d' . ' consi ered to be in 'ON' state when forward
I
biase d resistors. . n a 1g1tal system the logic gates are implemented by using
diodes an .

Diode AND Gate

Figure 8.1 (a) shows the 'AND' gate operation of a . . .
v orresponding to logic o (LOW) d . semico nd uctor diode. Let the inputs applied are OV
and 5_ ct· ns of inputs is given in Tabl 8 1an logic-1 (HIGH) respectively. The output Y for all the possible
comb1na 10 e . .

Vee

Ao----Kl----+--~Y

Figure-8.1(a)
(i) For the inputs A = B = 0 V or LOW; the corresponding circuit is shown in Figure 8.1(b ). In this
circuit diode 0 and 0 are forward biased and current / 1 and 12 flows as shown in Figure. Thus, the
1 2
voltage across input A and B will make the voltage across output Y equals to zero.
Vee Vee
I
I I
I I
I I
I 1 R
I
I
R I

/1 /
/1
.,.. ___________ .. "' ,
/ •-------------"'
A=OV 1.--_,-j,----Y
ov-----K~-----+---Y
o·1
,,
,. ___ _________ .. ·,
B = 0 V _ _..,. ~------t
5v-----K ~ - -

(e)
(b)
Figure-B. 1(b) & (c} Diode AND gate operation
(ii) Let A= v (LOW) and B = 5 v (HIGH) then diode 0 1 is forward biased _and diode 0 2 become
0. h • F'gure 8 1(c) Therefore the voltage across A 1s appears as output Y.
reverse biased as s own 1n 1 · · '
Similarly if A = V (HIGH) and B = O V (LOW) then diod~ 0 1 will be OFF (Reverse biased) and
. ' 5 db' sed) and the output Ywill be same as the voltage across 8.
diode 0 will be ON (Forwar 1a ,
2
 d. des are OFF (Reverse biased) and the cu
(iii) If we apply A= B = 5 V or HIGH; then both the ,o h tput Ywill be same as supply rre111
It
/ 1 and / 2 becomes zero. Therefore, the vo age
across t
. . e ou f . uts A and a Volta 9e.
•
Thus, the output Yis either LOW or HIGH for various c ombinatIons o Inp ·
. f,onofinputs
Table-8 1 Outputs Yforvariouscom bma
-

y
A B D1 D2
LOW LOW ON ON LOW

LOW HIGH ON OFF LOW

HIGH LOW OFF ON LOW

HIGH HIGH OFF OFF HIGH

It .Is clear from the

· Table 8.1 that the given
. . . per forms "AND operation".
cIrcuIt
Diode OR Gate
·
Figure · ductor d'ode
8.2 shows the 'OR' gate operation of a semIcon 1 · For different combinations of in Puts
A and B the table for output Y is drawn at Table 8.2.

~ -.... Y=(A+B)

Figure-8.2 Diode OR gate

0

In this circuit if both the inp uts are low or one of the inputs is LOW then output Y is HIGH. If both the
inputs are HIGH; then diode 0 1 and 0 2 are ON (Forward biased) and therefore, output Ybecome LOW.
Table-8.2 Output Yfor various combination ofinputs
A . .. I''
. ·. B, Q1 D2 ,Y s!i.•

LOW LOW OFF OFF LOW

LOW HIGH OFF ON HIGH
HIGH LOW ON OFF HIGH
HIGH HIGH ON ON HIGH
It is clear that the above circuit performs diode 'OR' operation.

8.1.2 Transistor as Switching Circuit

A transistor can be employed as a switch when it is biased to cutoff (OFF) and saturation (ON). A
transistor in the common emitter configuration being used as a switch is shown in Figure 8.3 (a). In this circuit the
input voltage ~n controls the operation. If it Is less than the cut in voltage of the transistor (LOW), the base current
J8 c:: oand therefore the collector current is zero. This corresponds to the switch in the OFF (open) position. As the
input voltage is increased, the base current voltage is increased, the base current/ increases which causes an
increase in the collector currentlc(·: lcoc / 8 ) (and Vin= HIGH). 8
 Vee
Vee

Re
y
VOL<

v,n A

"= -
(a) (b)
Flgure-8.3 (a) CE transistor and (b) Switching conductor

Also, le = Vee - VeE ...(i)

Re
Due to increase in le, the voltage VeEdecreases and ultimately goes
V111 (A) T1 V!t ( Y)
below V8E which makes the collector base junction forward bias. Therefore, both
the junction becomes forward biased and consequently driven the transistor LOW OFF HIGH

into saturation (ON). The voltage VeE will be in the range 0.1 V - 0.2 V for S; HIGH ON LOW

transistor, giving the voltage across Re almost equals to Vee· Depending upon Tab/e-8.3 Transistorasanlnverter
the input conditions the output Yis given in the Table 8.3.
From the above discussion it is clear that the given circuit ( CE transistor) works as an 'inverter'.
The Figure 8.4 (a) and (b) shows the operation of transistors as NAND gate.
Vee

t-----oY

A B T, T2 y
0 0 OFF OFF 1

0 1 OFF ON 1
1 0 ON OFF 1
1 1 ON ON 0

(a) (b)

Figure-8.4 Transistor as NANO gate

• The Figure 8.5 (a) shows the operation of transistors as NOR gate .
Vee

Re
1-----v y = A+B
A B T, T2 y
0 0 OFF OFF 1

0 1 OFF ON 0
1 0 ON OFF 0

Y1 =A+B
1 1 ON ON 0

(a) (b)

F/gure-8.5 Transistor as NOR gate

 • .,...,ri g

· diode and transistor cornbinedly

• Th e NANO gate can also be implemented by using as showri .1
Figure 8.6. ri
Vee

D,2 T1 y
A B D1
0 0 ON ON OFF 1

1 ON OFF OFF 1
0
1 0 OFF ON OFF 1
D2
1 OFF OFF ON 0
1
AND Inverter (b)
(a)
Figure-8.6 Diode and transistor NANO gate

• NANO and NOR switching circuit:

Vee
Vee

Re

1
(a) NANO (b) NOR
Figure-8.7 Switching Circuit

8.1.3 FET as Switching Circuit

The JFET and MOSFET devices can also be used as switches . In these devices current flows due to
majority charge carriers only. Thus called unipolar devices .
Figure 8.8 shows the JFET (in common source configuration) is working as a switch . In the circuit the
input voltage is applied as ½n (a) 0 V (b) +5 V and depending upon the input the output V0 is obtained.
Voo

v,n T1 .Vo
LOW OFF HIGH
HIGH ON LOW

(b)
(a)

Figure-8.8 JFET as Switch

For ½n = 0 V;
T1 is off and V0 = V00 (HIGH)
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