1. An ideal pn junction diode is operating in the forward bias region. The change in 10.

10. Determine the transition capacitance of a diffused junction varicap diode at a

diode voltage, that will cause a factor of 9 increase in current, is reverse potential of 4.2V if C(0)=80pF and VT=0.7 V.

A. 43.3 mV C. 59.6 mV A. 67.3 pF C. 41.8 pF

B. 24 mV D. 19 mV B. 33.7 pF D. 52.7 pF

2. Calculate the reactance of an alloy junction varactor diode at a reverse bias voltage 11. Calculate the temperature coefficient in %/°C of a 10-V nominal Zener diode at 25°
of 3 V if zero potential capacitance is 60 pF and threshold voltage of 0.6 V and applied C if the nominal voltage is 10.2 V at 100° C.
frequency is 5 MHz.
A. 0.0238 C. 0.0251
A. 1.3 kQ C. 2.3 kQ
B. 0.0267 D. 0.0321
B. 3.7 kQ D. 4.4 kQ
12. The intrinsic carrier concentration of silicon sample at 300 K is 1.5 x 10^16/m^3. If
3. Find the percentage increase in the reverse saturation current of a transistor if the after doping, the number of majority carriers is 5 x 10^20/m^3. The minority carrier
temperature is increased from 25°C to 50°C. density is

A. 120 % C. 565.7% A. 4.5 x 10^11/m3 B. 3.33 x 10^4/m3

B. 375.5% D. 348 % C. 5 x 10^20/m3 D. 3 x 10^-5/m3

4. The reverse saturation current at 300 K of a p-n junction Ge diode is 5 μA. Find the 13. In the circuit shown in the given figure, the diode states at the extremely large
voltage to be applied across the junction to obtain a forward current of 50 mA. negative values of the input voltage vi are:

A. 0.674 V C. 0.238 V a. D1 on; D2 off b.D1 off; D2 on

B. 0.542 V D. 0.321 V c. D1 off; D2 off d.D1 on; D2 on

5. Calculate the ratio of the current for a forward bias of 0.06 V to the current for the 14. For the given input waveform to the given circuit, what is the minimum value of the
same value of reverse bias applied to a Ge p-n diode at 27 C. output waveform?

A. 10.16 C. 9.45 a.4V b. 16V

B. 4.37 D. 20.34 c. 12V d.0V

6. A certain PN junction diode has a leakage current of 10-14A at room temperature of 15. In the amplifier circuit below, the values of R1 and R2 are such that the transistor
27 °C and 10^-9A at 125 °C. The diode is forward biased with a constant-current is operating at VCE = 3V and IC 1.5 mA when ẞ= 150. For a transistor with B of 200,
source of 1 mA at room temperature. If current is assumed to remain constant, the operating point (VCE, IC) is
calculate the junction barrier voltage at 125 °C.
A. 2 V, 2 mA B. 1.3 V, 2.76 mA
A. 0.32 V C. 0.56 V
C. 3.3 V, 3.33 mA D. 3V, 3 mA
B. 0.7 V D. 0.9 V
16. Calculate the value of beta (B) if the leakage current of a transistor are ICBO = 5
7. A diode has reverse saturation current IS 10^-18 A and non-ideality factor n = 1.05. μA and ICEO = 0.4 mA, and IB = 30 μA.
Calculate the diode voltage if diode has current of 70 μA.
A. 50 C. 101
A. 0.33 V C. 0.807 V
B. 26 D. 79
B. 0.43 V D. 0.67 V
17. In class A transformer coupled power amplifier, determine the efficiency if the
8. GaAs has an energy gap 1.43 eV the optical cut off wavelength of GaAs when used supply voltage, VCC = 12 V and the output peak voltage is 6 VP.
in LED is
A. 12.5% C. 55%
A. 689 nm B. 968 nm
B. 78.5 % D. 99.5%
C. 896 nm D. 869 nm
18. The reverse saturation current (ICEO) in a PNP germanium transistor type OC 71
9. GaAs has an energy gap 1.43 eV the optical cut off wavelength of GaAs would lie in is 8 μA. If the transistor common base current gain is 0.979 and base current is 40μA,
the calculate the collector current.

A. visible region of the spectrum A. 3.3 mA C. 1.9 mA

B. infrared region of the spectrum B. 2.1 mA D. 4.7 mA

C. ultraviolet region of the spectrum

D. for ultraviolet region of the spectrum 19. The type of power amplifier, which exhibits crossover distortion in its output, is

A. Class A C. Class AB

B. Class B D. Class C
 33. At what value of RS does the circuit switch from depletion mode to enhancement
mode?
20. Calculate the value of IE.
a. 250 ohms b. 500 ohms
A. 1mA C. 10mA
c. 10M ohms d. NOTA
B. 5mA D. 3mA
34. How many h-parameters of a transistor are dimensionless?
21. To properly bias the NPN transistor below, which voltages are correct?
a) Four b) Two
A.E=+3; B = +1; C = -7
c) Three d) One
B.E=-1; B=+1; C = +10
35. In a hybrid model, which parameter is known as the output conductance?
C.E=-1.7; B=-2.7; C = -5
a) h11 b) h12
D.E=0;B=0; C = +12
c) h21 d) h22
22. What is wrong with this circuit?

A. The zener is open

. B. The zener is shorted.

C. nothing D. not enough data

23. Calculate the resistivity of an n-type semiconductor from the following data: density
of conduction electrons =8x10^13 cm -3, density of holes =5x10^12cm-3v, mobility of
conduction electron =2.3x10^4cm^2.V-1.s^-1 and mobility of holes =100cm^2.V-1.s^-1

a.0.43 Q-m b.0.34 Q-m

C.0.42 Q-m d. 0.24 Q-m

24. A given BJT has an emitter current of 12 mA and a base current of 600 μA. What
is the value of the dc beta?

25. In the circuit shown below, the silicon npn transistor Q has a very high value of B.
What is the required value of R2 in ko to produce lc = 1 mA?

26. Si transistor of the following figure has a a = 0.9 and I_CE=0, V_EE= 5 V and Vcc
= 13 V, then R_E will be if I_EQ = 1 mA.

27. The JFET in the circuit shown in figure has an I_DSS= 10 mA and Vp = -5 V. What
is the value of the resistance Rs for a drain current I_DS = 6.4 mA?

28. Using voltage-divider biasing, what is the voltage at the gate VG?

a .5.2 V b. 4.2 V

c. 2.2 V d. 3.2 V

29. Given the values of VDQ and IDQ for this circuit, determine the required values of
RD and RS.

a. 2k, 2k b. 1k, 5.3 k

c. 3.2 k, 400 d. 2.5k, 5.3 k

30. Determine ID and VGS for the JFET with voltage-divider bias, given that for this
particular JFET the parameter values are such that VD=7V.

31. Assume the N-type JFET gmo-1.25mS. Assume Idss=2.5mA. Find the pinch-off V.

a. -3V b. +3V

c. -4V d. +4V

32. What are the voltages across RD and RS?

A. OV, OV B. 5V, 5V

C. 10 V, 10 V D. 20 V, 20 V