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    Fundamentals of Transistors Supplemental Reading

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    This document provides supplementary reading assignments for a course on fundamentals of transistors. It lists 7 units that will be covered in the course, with each unit containing multiple lecture topics. Supplementary reading is assigned from the textbook "Fundamentals of Nanotransistors" for each lecture, listed in parentheses. A draft copy of this textbook is available to students in the reading materials section. The document provides an overview of the course structure and identifies the additional reference material students should read to enhance their learning for each lesson.

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    Fundamentals of Transistors Supplemental Reading

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    GN
    10 views2 pages
    This document provides supplementary reading assignments for a course on fundamentals of transistors. It lists 7 units that will be covered in the course, with each unit containing multiple lecture topics. Supplementary reading is assigned from the textbook "Fundamentals of Nanotransistors" for each lecture, listed in parentheses. A draft copy of this textbook is available to students in the reading materials section. The document provides an overview of the course structure and identifies the additional reference material students should read to enhance their learning for each lesson.

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    This document provides supplementary reading assignments for a course on fundamentals of transistors. It lists 7 units that will be covered in the course, with each unit containing multiple lecture topics. Supplementary reading is assigned from the textbook "Fundamentals of Nanotransistors" for each lecture, listed in parentheses. A draft copy of this textbook is available to students in the reading materials section. The document provides an overview of the course structure and identifies the additional reference material students should read to enhance their learning for each lesson.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    10 views2 pages

    Fundamentals of Transistors Supplemental Reading

    Uploaded by

    GN
    This document provides supplementary reading assignments for a course on fundamentals of transistors. It lists 7 units that will be covered in the course, with each unit containing multiple lecture topics. Supplementary reading is assigned from the textbook "Fundamentals of Nanotransistors" for each lecture, listed in parentheses. A draft copy of this textbook is available to students in the reading materials section. The document provides an overview of the course structure and identifies the additional reference material students should read to enhance their learning for each lesson.

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    of 2

    Fundamentals of Transistors:

    Mark Lundstrom
    edX Spring 2021

    Supplementary reading assignments

    Supplementary reading assignments are from:

    Fundamentals of Nanotransistors (FoN) by M. S. Lundstrom


    (listed in parentheses beside relevant lectures).

    A draft copy of this book is available in the “Reading Materials” tab

    Unit 1: Transistors, circuits and compact models


    Supplemental reading from FoN (in parentheses)

    L1.1: The MOSFET as a black box (FoN: 2.1 - 2.3)


    L1.2: Digital circuits
    L1.3: Analog/RF circuits
    L1.4: MOSFET device metrics (FoN: 2.4)
    L1.5: Compact models
    L1.6: Unit 1 Recap

    Unit 2: Essential physics of the MOSFET


    Supplemental reading from FoN (in parentheses)

    L2.1: Energy Band Diagram Review


    L2.2: Energy Band View of MOSFETs (FoN: 3.1 - 3.8)
    L2.3: MOSFET IV Theory (FoN: 4.1 - 4.7)
    L2.4: The Square Law MOSFET (FoN: Exercises 4.1 and 4.2)
    L2.5: The Virtual Source model (FoN: 5.1 - 5.6)
    L2.6: Unit 2 Recap

    Unit 3: MOS Electrostatics


    Supplemental reading from FoN (in parentheses)

    L3.1: The Energy Band Diagram Approach (FoN: 6.2)


    L3.2: The Depletion Approximation (FoN: 6.4 - 6.8)
    L3.3: Gate Voltage and Surface Potential (FoN: 7.1, 7.3)
    L3.4 Flat-band Voltage (FoN: 7.2)
    L3.5: MOS CV (FoN: 7.4 - 7.7)
    L3.6: The Mobile Charge vs. Surface Potential (FoN: 8.1 - 8.4 / 9.1 - 9.5)
    L3.7: The Mobile Charge vs. Gate Voltage (FoN: 8.5 - 8.7 / 9.7 - 9.7)
    L3.8: 2D MOS Electrostatics (FoN: 10.1 - 10.9)
    L3.9: The VS model revisited (FoN: 11.1 - 11.6)
    L3.10: Unit 3 Recap

    Unit 4: Transmission theory of the MOSFET


    Supplemental reading from FoN (in parentheses)

    L4.1: Landauer Approach (FoN: 12.1 - 12.9 / 16.1 - 16.7)


    L4.2: Current at Low and High Bias (FoN: 12.3)
    L4.3 The Ballistic MOSFET (FoN: 13.1 - 13.8)
    L4.4 Velocity at the Virtual Source (FoN: 14.1 - 14.6)
    L4.5: Transmission Theory of the MOSFET (FoN: 17.1 - 17.9)
    L4.6: The VS model Revisited (FoN: 15.1 - 15.7 / 18.1 - 18.6)
    L4.7: Analysis of Measured IV Data (FoN: 19.1 - 19.10)
    L4.8: Unit 4 Recap

    Unit 5: Additional topics


    Supplemental reading from FoN (in parentheses)

    L5.1: Limits of MOSFETs (FoN: 20.2)


    L5.2: Power MOSFETs
    L5.3: High Electron Mobility Transistors (HEMTs)
    L5.4: Review of PN Junctions
    L5.5: Heterostructure Bipolar Transistors (HBTs)
    L5.6: A Second Look at Compact models
    L5.7: Unit 5 Recap

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