IRF9520

Data Sheet July 1999 File Number 2281.3

6A, 100V, 0.600 Ohm, P-Channel Power Features

MOSFET • 6A, 100V
This advanced power MOSFET is designed, tested, and
• rDS(ON) = 0.600Ω
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are • Single Pulse Avalanche Energy Rated
P-Channel enhancement mode silicon gate power field • SOA is Power Dissipation Limited
effect transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers • Nanosecond Switching Speeds
and drivers for high power bipolar switching transistors • Linear Transfer Characteristics
requiring high speed and low gate drive power. These types
• High Input Impedance
can be operated directly from integrated circuits.

Formerly developmental type TA17501. Symbol

D
Ordering Information
PART NUMBER PACKAGE BRAND

IRF9520 TO-220AB IRF9520 G

NOTE: When ordering, use the entire part number.

S

Packaging
JEDEC TO-220AB

SOURCE
DRAIN
GATE

DRAIN (FLANGE)

4-3 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
 IRF9520

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

IRF9520 UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS -100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -100 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID -6 A
TC =100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID -4 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM -24 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 40 W
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32 W/oC
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 370 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 260 oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. TJ = 25oC to TJ = 125oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS ID = -250µA, VGS = 0V (Figure 10) -100 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250µA -2 - -4 V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - -25 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V - - -250 µA
TC = 125oC
On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = -10V -6 - - A
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = -3.5A, VGS = -10V (Figures 8, 9) - 0.500 0.600 Ω
Forward Transconductance (Note 2) gfs VDS > ID(ON) x rDS(ON)MAX, ID = -3.5A 0.9 2 - S
( Figure 12)
Turn-On Delay Time td(ON) VDD = 0.5 x Rated BVDSS, ID ≈ -6.0A, - 25 50 ns
RG = 50Ω , RL = 7.7Ω for VDSS = 50Ω
Rise Time tr - 50 100 ns
MOSFET Switching Times are Essentially
Turn-Off Delay Time td(OFF) Independent of Operating Temperature - 50 100 ns
Fall Time tf - 50 100 ns
Total Gate Charge Qg(TOT) VGS = -10V, ID = -6A, VDS = 0.8 x Rated BVDSS - 16 22 nC
(Gate to Source + Gate to Drain) (Figure 14) Gate Charge is Essentially
Gate to Source Charge Qgs Independent of Operating Temperature - 9 - nC
Gate to Drain “Miller” Charge Qgd - 7 - nC
Input Capacitance CISS VDS = -25V, VGS = 0V, f = 1MHz - 300 - pF
(Figure 11)
Output Capacitance COSS - 200 - pF
Reverse Transfer Capacitance CRSS - 50 - pF
Internal Drain Inductance LD Measured From the Modified MOSFET - 3.5 - nH
Contact Screw on Tab To Symbol Showing the
Center of Die Internal Devices
Measured From the Drain Inductances - 4.5 - nH
D
Lead, 6mm (0.25in) from
Package to Center of Die LD
Internal Source Inductance LS Measured From the - 7.5 - nH
Source Lead, 6mm G
(0.25in) From Header to LS
Source Bonding Pad
S

Thermal Resistance Junction-to-Case RθJC - - 3.12 oC/W

Thermal Resistance Junction-to-Ambient RθJA Typical Socket Mount - - 62.5 oC/W

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 IRF9520

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current ISD Modified MOSFET Sym- - - -6.0 A
bol Showing the Integral D
Pulse Source to Drain Current ISDM - - -24 A
Reverse P-N Junction
(Note 3)
Diode
G

Source to Drain Diode Voltage VSD TC = 25oC, ISD = -6.0A, VGS = 0V - - -1.5 V
(Note 2) (Figure 13)
Reverse Recovery Time trr TJ = 150oC, ISD = -6.0A, dISD/dt = 100A/µs - 230 - ns
Reverse Recovery Charge QRR TJ = 150oC, ISD = -6.0A, dISD/dt = 100A/µs - 1.3 - µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 15.4mH, RG = 25Ω, peak IAS = 6.0A.

Typical Performance Curves Unless Otherwise Specified

1.2 6.0
POWER DISSIPATION MULTIPLIER

1.0
4.8
ID, DRAIN CURRENT (A)

0.8
3.6

0.6
2.4
0.4

1.2
0.2

0.0 0
0 25 50 75 100 125 150 25 50 75 100 125 150
TA , CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE CASE TEMPERATURE

1
ZθJC, NORMALIZED TRANSIENT
THERMAL IMPEDANCE

0.5

0.2 PDM

0.1
0.1
0.05 t1
t2
0.02
0.01 NOTES:
SINGLE PULSE DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
0.01
10-5 10-4 10-3 10-2 10-1 1 10
t 1, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE

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 IRF9520

Typical Performance Curves Unless Otherwise Specified (Continued)

-10
VGS = -10V VGS = -9V
10µs
-8 VGS = -8V

ID, DRAIN CURRENT (A)

10 100µs
ID, DRAIN CURRENT (A)

-6
1ms VGS = -7V

PULSE DURATION = 80µs

OPERATION IN THIS AREA -4 DUTY CYCLE = 0.5% MAX.
1 10ms
IS LIMITED BY rDS(ON) VGS = -6V
100ms
DC -2
VGS = -5V
TC = 25oC VGS = -4V
TJ = MAX RATED
0.1 0
1 10 100 0 -10 -20 -30 -40 -50
VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

-5 -10
VDS ≥ I D(ON) x rDS(ON) MAX
VGS = -7V ID(ON), ON-STATE DRAIN CURRENT (A) PULSE DURATION = 80µs
VGS = -8V
-4 -8 DUTY CYCLE = 0.5% MAX.
ID, DRAIN CURRENT (A)

VGS = -9V TJ = 125oC

VGS = -10V TJ = 25oC
-3 VGS = -6V -6
TJ = -55oC

PULSE DURATION = 80µs

-2 -4
DUTY CYCLE = 0.5% MAX.
VGS = -5V
-1 -2
VGS = -4V
0 0
0 -1 -2 -3 -4 -5 0 -2 -4 -6 -8 -10
VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

2.0 2.2
PULSE DURATION = 80µs VGS = -10V, ID = -4A
DUTY CYCLE = 0.5% MAX.
NORMALIZED DRAIN TO SOURCE

PULSE DURATION = 80µs

1.8 DUTY CYCLE = 0.5% MAX.
rDS(ON), DRAIN TO SOURCE

1.6
ON RESISTANCE (Ω)

ON RESISTANCE

1.2 1.4
VGS = -10V

0.8 1.0

0.4 0.6
VGS = -20V

0 0.2
0 -5 -10 -15 -20 -25 -40 0 40 80 120
ID, DRAIN CURRENT (A) TJ , JUNCTION TEMPERATURE (oC)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

VOLTAGE AND DRAIN CURRENT RESISTANCE vs JUNCTION TEMPERATURE

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 IRF9520

Typical Performance Curves Unless Otherwise Specified (Continued)

1.25 500
ID = 250µA VGS = 0V, f = 1MHz
CISS = CGS + CGD
NORMALIZED DRAIN TO SOURCE

400 CRSS = CGD

1.15
COSS ≈ CDS + CGD
BREAKDOWN VOLTAGE

C, CAPACITANCE (pF)
CISS
1.05 300

COSS
0.95 200

0.85 100 CRSS

0.75 0
-40 0 40 80 120 160 0 -10 -20 -30 -40 -50
TJ , JUNCTION TEMPERATURE (oC) VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VOLTAGE vs JUNCTION TEMPERATURE

3 -100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
gfs, TRANSCONDUCTANCE (S)

ISD, DRAIN CURRENT (A)

2 -10
TJ = 150oC

TJ = -55oC
TJ = 25oC
TJ = 25oC
1 TJ = 125oC -1.0

0 -0.1
0 -2 -4 -6 -8 -10 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8
ID , DRAIN CURRENT (A) VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

0
ID = -6A
VGS, GATE TO SOURCE (V)

-5

VDS = -80V

-10 VDS = -50V

VDS = -20V

0 4 8 12 16 20
Qg(TOT) , TOTAL GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

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 IRF9520

Test Circuits and Waveforms

VDS
tAV

L 0

VARY tP TO OBTAIN
RG
-
REQUIRED PEAK IAS
VDD
+

0V DUT VDD
tP IAS
VGS
VDS
IAS tP
0.01Ω
BVDSS

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

tON tOFF

td(ON) td(OFF)

tr tf
0
RL 10% 10%

DUT - VDS
VDD 90% 90%
RG
VGS + VGS
0
10%

50% 50%
PULSE WIDTH
90%

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
-VDS
CURRENT (ISOLATED
REGULATOR SUPPLY)
0

VDS
DUT
12V
0.2µF 50kΩ
BATTERY
0.3µF

Qgs VGS
D Qgd

Qg(TOT)
G DUT
VDD
0
IG(REF) S
0
+VDS
IG CURRENT ID CURRENT
SAMPLING SAMPLING
RESISTOR RESISTOR IG(REF)

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

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 IRF9520

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