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ADM202EARN
ADM202EARN
PDAs
GND
ADM202E
15
REV. 0
Information furnished by Analog Devices is believed to be accurate and © Analog Devices, Inc., 1996
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
otherwise under any patent or patent rights of Analog Devices. Tel: 617/329-4700 Fax: 617/326-8703
–2– REV. 0
ADM202E/ADM1181A
PIN FUNCTION DESCRIPTION PIN CONNECTIONS
Mnemonic Function
C1+ 1 16 VCC
VCC Power Supply Input: +5 V ± 10%. V+ 2 15 GND
R2IN 8 9 R2OUT
C1+, C1– External Capacitor 1 is connected between
these pins. 0.1 µF capacitor is recommended NC = NO CONNECT
but larger capacitors up to 47 µF may be used.
C2+, C2– External Capacitor 2 is connected between
these pins. 0.1 µF capacitor is recommended
but larger capacitors up to 47 µF may be used.
TIN Transmitter (Driver) Inputs. These inputs ac-
cept TTL/CMOS levels.
TOUT Transmitter (Driver) Outputs. These are RS-
232 signal levels (typically ± 9 V).
RIN Receiver Inputs. These inputs accept RS-232
signal levels. An Internal 5 kΩ pull-down resis-
tor to GND is connected on each input.
ROUT Receiver Outputs. These are CMOS output
logic levels.
ADM202E ADM1181A
GND GND
15 15
NOTE NOTE
*INTERNAL 5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT *INTERNAL 5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT
REV. 0 –3–
ADM202E/ADM1181A
GENERAL DESCRIPTION and VCC, while it is connected between V+ and GND on the
The ADM202E/ADM1181E are ruggedized RS-232 line drivers/ ADM1181A. It is acceptable to use either configuration with
receivers. Step-up voltage converters coupled with level shifting both the ADM202E and ADM1181A. If desired, larger capaci-
transmitters and receivers allow RS-232 levels to be developed tors (up to 47 µF) can be used for capacitors C1–C4. This facili-
while operating from a single +5 V supply. tates direct substitution with older generation charge pump
Features include low power consumption, high transmission RS-232 transceivers.
rates and compatibility with the EU directive on Electromag- S1 S3
netic compatibility. EM compatibility includes protection VCC V+ = 2VCC
requirements.
NOTE: C3 CONNECTS BETWEEN V+ AND GND ON THE ADM1181A
The devices are ideally suited for operation in electrically harsh
environments or where RS-232 cables are frequently being
Figure 1. Charge Pump Voltage Doubler
plugged/unplugged. They are also immune to high RF field
strengths without special shielding precautions. S1 S3
V+ GND
CMOS technology is used to keep the power dissipation to an FROM
VOLTAGE C2 C4
absolute minimum allowing maximum battery life in portable DOUBLER
S2 S4
applications. GND V– = –(V+)
–4– REV. 0
ADM202E/ADM1181A
HIGH BAUD RATE The protection structure achieves ESD protection up to ± 15 kV
The ADM202E/ADM1181A feature high slew rates permitting and EFT protection up to ± 2 kV on all RS-232 I/O lines. The
data transmission at rates well in excess of the EIA/RS-232-E methods used to test the protection scheme are discussed later.
specifications. RS-232 voltage levels are maintained at data rates
up to 230 kb/s even under worst case loading conditions. This
R1
allows for high speed data links between two terminals or indeed RECEIVER RX
INPUT
it is suitable for the new generation ISDN modem standards which D1
RIN
requires data rates of 230 kbps. The slew rate is internally con-
D2
trolled to less than 30 V/µs in order to minimize EMI interference.
70 70
60 60 LIMIT
50 50
dBµV
dBµV
40 LIMIT 40
30 30
20 20
10 10
0 0
START 30.0 MHz STOP 200.0 MHz 0.3 0.6 1 3 6 10 30
LOG FREQUENCY – MHz
REV. 0 –5–
ADM202E/ADM1181A
Typical Performance Curves
10 15
VCC = +5V VCC = +5V
8 TA = 258C TA = 258C
10
6
4 5
TOUT VOLTAGE – V
TOUT – V
0
0
–2 –5
–4
–10
–6
–8 –15
0 500 1000 1500 2000 2500 0 1 2 3 4 5 6 7 8 9 10
CL – pF ILOAD – mA
Figure 6. Transmitter Output Voltage High/Low vs. Figure 9. Transmitter Output Voltage Low/High vs.
Load Capacitance @ 230 kbps Load Current
12
VCC = +5V
TA = 258C
TA = 258C
10
8
TOUT – V+
0
3 3.5 4 4.5 5 5.5
VCC – V
Figure 7. Transmitter Output Voltage High vs. VCC Figure 10. 230 kbps Data Transmission
10 400
TA = 258C
VCC = +5V
8 TA = 258C 350
6
300
CHARGE PUMP VOLTAGE
4
IMPEDANCE – Ω
250
2
0 200
–2 150
–4
100
–6
50
–8
–10 0
0 5 10 15 20 25 3 3.5 4 4.5 5 5.5
ILOAD – mA VCC – V
Figure 8. Charge Pump V+, V– vs. Current Figure 11. Charge Pump Impedance vs. VCC
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ADM202E/ADM1181A
ESD TESTING (IEC1000-4-2)
100
IEC1000-4-2 (previously 801-2) specifies compliance testing
90
using two coupling methods, contact discharge and air-gap
discharge. Contact discharge calls for a direct connection to the
unit being tested. Air-gap discharge uses a higher test voltage
IPEAK – %
but does not make direct contact with the unit under test. With
air discharge, the discharge gun is moved towards the unit un-
der test developing an arc across the air gap, hence the term air- 36.8
gap discharge. This method is influenced by humidity, tempera-
ture, barometric pressure, distance and rate of closure of the dis-
charge gun. The contact-discharge method while less realistic is 10
more repeatable and is gaining acceptance in preference to the tRL tDL TIME t
air-gap method.
Although very little energy is contained within an ESD pulse, Figure 13. Human Body Model ESD Current Waveform
the extremely fast rise time coupled with high voltages can cause
failures in unprotected semiconductors. Catastrophic destruc-
100
tion can occur immediately as a result of arcing or heating. Even
90
if catastrophic failure does not occur immediately, the device
may suffer from parametric degradation which may result in de-
IPEAK – %
graded performance. The cumulative effects of continuous ex-
posure can eventually lead to complete failure.
I/O lines are particularly vulnerable to ESD damage. Simply
touching or plugging in an I/O cable can result in a static dis-
charge which can damage or completely destroy the interface
product connected to the I/O port. Traditional ESD test meth- 10
ods such as the MIL-STD-883B method 3015.7 do not fully
0.1 TO 1ns TIME t
test a product’s susceptibility to this type of discharge. This test 30ns
was intended to test a product’s susceptibility to ESD damage 60ns
during handling. Each pin is tested with respect to all other
pins. There are some important differences between the tradi- Figure 14. IEC1000-4-2 ESD Current Waveform
tional test and the IEC test:
The ADM202E/ADM1181E products are tested using both the
a. The IEC test is much more stringent in terms of discharge above mentioned test methods. All pins are tested with respect
energy. The peak current injected is over four times greater. to all other pins as per the MIL-STD-883B specification. In ad-
b. The current rise time is significantly faster in the IEC test. dition all I/O pins are tested as per the IEC test specification.
c. The IEC test is carried out while power is applied to the device. The products were tested under the following conditions:
It is possible that the ESD discharge could induce latch-up in a. Power-On
the device under test. This test therefore is more representative b. Power-Off
of a real-world I/O discharge where the equipment is operating
normally with power applied. For maximum peace of mind, There are four levels of compliance defined by IEC1000-4-2.
however, both tests should be performed therefore ensuring The ADM202E/ADM1181A products meet the most stringent
maximum protection both during handling and later during field compliance level for both contact and for air-gap discharge.
service. This means that the products are able to withstand contact dis-
charges in excess of 8 kV and air-gap discharges in excess of
HIGH
R1 R2 15 kV.
VOLTAGE
GENERATOR
DEVICE
C1 UNDER TEST
REV. 0 –7–
ADM202E/ADM1181A
Table I. IEC1000-4-2 Compliance Levels A simplified circuit diagram of the actual EFT generator is illus-
trated in Figure 16.
Level Contact Discharge Air Discharge
The transients are coupled onto the signal lines using an EFT
1 2 kV 2 kV coupling clamp. The clamp is 1 m long and it completely sur-
2 4 kV 4 kV rounds the cable providing maximum coupling capacitance
3 6 kV 8 kV (50 pF to 200 pF typ) between the clamp and the cable. High
4 8 kV 15 kV energy transients are capacitively coupled onto the signal lines.
Fast rise times (5 ns) as specified by the standard result in very
effective coupling. This test is very severe since high voltages are
Table II. ADM202E/ADM1181A ESD Test Results coupled onto the signal lines. The repetitive transients can often
cause problems where single pulses don’t. Destructive latchup
ESD Test Method I/O Pins Other Pins
may be induced due to the high energy content of the tran-
MIL-STD-883B ± 15 kV ± 3 kV sients. Note that this stress is applied while the interface prod-
IEC1000-4-2 ucts are powered up and are transmitting data. The EFT test
Contact ± 8 kV applies hundreds of pulses with higher energy than ESD. Worst
Air ± 15 kV case transient current on an I/O line can be as high as 40 A.
5ns
V
50ns
0.2/0.4ms
–8– REV. 0
ADM202E/ADM1181A
IEC1000-4-3 RADIATED IMMUNITY current glitch between VCC and GND which results in con-
IEC1000-4-3 (previously IEC801-3) describes the measurement ducted emissions. It is, therefore, important that the switches in
method and defines the levels of immunity to radiated electro- the charge pump guarantee break-before-make switching under
magnetic fields. It was originally intended to simulate the elec- all conditions so that instantaneous short circuit conditions do
tromagnetic fields generated by portable radio transceivers or not occur.
any other device which generates continuous wave radiated The ADM202E has been designed to minimize the switching
electromagnetic energy. Its scope has since been broadened to transients and ensure break-before-make switching thereby
include spurious EM energy which can be radiated from fluores- minimizing conducted emissions. This has resulted in the level
cent lights, thyristor drives, inductive loads, etc. of emissions being well below the limits required by the specifi-
Testing for immunity involves irradiating the device with an EM cation. No additional filtering/decoupling other than the recom-
field. There are various methods of achieving this including use mended 0.1 µF capacitor is required.
of anechoic chamber, stripline cell, TEM cell, GTEM cell. A Conducted emissions are measured by monitoring the mains
stripline cell consists of two parallel plates with an electric field line. The equipment used consists of a LISN (Line Impedance
developed between them. The device under test is placed within Stabilizing Network) that essentially presents a fixed impedance
the cell and exposed to the electric field. There are three severity at RF, and a spectrum analyzer. The spectrum analyzer scans
levels having field strengths ranging from 1 V to 10 V/m. Results for emissions up to 30 MHz and a plot for the ADM202E is
are classified in a similar fashion to those for IEC1000-4-2. shown in Figure 19.
1. Normal Operation.
S1 S3
2. Temporary Degradation or loss of function that is self- VCC V+ = 2V C C
recoverable when the interfering signal is removed. C1 C3
3. Temporary degradation or loss of function that requires S2 S4
VCC
GND
operator intervention or system reset when the interfering
signal is removed.
INTERNAL
4. Degradation or loss of function that is not recoverable due to OSCILLATOR
damage.
The ADM202E/ADM1181A products easily meet Classification Figure 17. Charge Pump Voltage Doubler
1 at the most stringent (Level 3) requirement. In fact field
strengths up to 30 V/m showed no performance degradation,
and error-free data transmission continued even during irradia- ø1
tion.
40
CONDUCTED EMISSIONS 30
This is a measure of noise that gets conducted onto the mains
20
power supply. Switching transients from the charge pump that
are 20 V in magnitude and contain significant energy can lead to 10
conducted emissions. Other sources of conducted emissions can
0
be due to overlap in switch on-times in the charge pump voltage 0.3 0.6 1 3 6 10 30
converter. In the voltage doubler shown below, if S2 has not LOG FREQUENCY – MHz
REV. 0 –9–
ADM202E/ADM1181A
RADIATED EMISSIONS RADIATED NOISE
dBµV
Figure 21 shows a plot of radiated emissions vs. frequency. This 40 LIMIT
–10– REV. 0
ADM202E/ADM1181A
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
16 9 16 9
0.4193 (10.65)
0.3937 (10.00)
0.2992 (7.60)
0.2914 (7.40)
0.177 (4.50)
0.169 (4.30)
0.256 (6.50)
0.246 (6.25)
1 8 1
8
16 9 16 9
0.1574 (4.00) 0.2440 (6.20) 0.280 (7.11)
0.1497 (3.80) 1 8 0.240 (6.10)
0.2284 (5.80) 1 8 0.325 (8.25)
0.300 (7.62) 0.195 (4.95)
PIN 1 0.060 (1.52) 0.115 (2.93)
PIN 1 0.0688 (1.75) 0.0196 (0.50) 0.015 (0.38)
x 45° 0.210 (5.33)
0.0098 (0.25) 0.0532 (1.35) 0.0099 (0.25) MAX 0.130
0.0040 (0.10)
0.160 (4.06) (3.30)
0.115 (2.93) MIN
8° 0.015 (0.381)
0.0500 0.0192 (0.49) 0° 0.022 (0.558) 0.100 0.070 (1.77) SEATING 0.008 (0.204)
SEATING 0.0099 (0.25) 0.0500 (1.27)
(1.27) 0.0138 (0.35) 0.014 (0.356) (2.54) 0.045 (1.15) PLANE
PLANE BSC 0.0160 (0.41) BSC
0.0075 (0.19)
REV. 0 –11–
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PRINTED IN U.S.A. C2162–18–7/96