Roll No.

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National Institute of Technology Delhi

Name of the Examination: Mid-semester – October 2020 (M. Tech. VLSI)

Branch : ECE (VLSI) Semester : 1st

Title of the Course : Semiconductor Devices Course Code : EVL561

Time: 1.5 Hours Maximum Marks: 25

NOTE: Attempt all questions. Be concise with your answers keeping track of time limit.

Section – A (1 mark each)

1. Electron mobility in Si is 1400 cm2V-1s-1. Calculate the mean free time in scattering of
electrons. (Given: the effective mass is 0.33 times the rest mass of electron).
2. Write down the conditions for a valid wavefunction.
3. An electron is in an infinite square well which is 8.9 nm wide. Calculate the energy (in eV)
of the electron in its second excited state.
4. An eigenfunction of the operator d2/dx2 is ψ = sinax. Find the corresponding eigenvalue.
5. Write down a ‘one-line summary’ of Kronig-Penny model.
6. Why is bandgap different for different semiconductors? Give a brief and sharp answer.
7. What is the key condition that discriminates between indirect and direct
semiconductors?
8. “Hole is a positively-charged quasiparticle”. Provide a brief comment on it.
9. In a p-type Si sample, the hole concentration is 2.25×1015 𝑐𝑚-3. If the
intrinsic carrier concentration is 1.5×1010 𝑐𝑚-3, then find out the electron
concentration in conduction band.

Section – B (2 marks each)

10. Electron with energy 2 eV is incident on a barrier 10 eV high and 0.5 nm wide. Find out
the transmission probability.

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11. “The energy levels of a finite potential well are lower than those of an infinite potential
well.” Justify this statement with the help of Heisenberg’s principle.
12. What is “effective mass” and how is it related to the Energy band structure of any given
material? What does it signify?
13. Discuss the “density of states” in semiconductors.
14. Discuss the conditions for moderate and super-high doping in semiconductors.

Section – C (3 marks each)

15. If EC – EF = 0.2 eV in GaAs at T = 500 K, calculate the values of equilibrium carrier

concentrations, n and p. (Given: For GaAs, the effective density of states in conduction
and valence bands is 4.37 x 1017 cm-3 and 8.68 x 1018 cm-3, respectively). Also, note that
under the assumed doping levels, the bandgap of GaAs remains temperature-
independent.
16. Draw and discuss the corresponding energy level diagrams when an intrinsic
semiconductor (e.g., Si) is doped with (i) trivalent impurity, and (ii) pentavalent
impurity.
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