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Part No. FGL40N120AND X

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FGL40N120ANDDatasheet (PDF) -
Fairchild Semiconductor
1 of 9
FGL40N120AND 1200V NPT IGBT

February 2005

FGL40N120AND
1200V NPT IGBT
Features Description
• High speed switching Employing NPT technology, Fairchild’s AND series of IGBTs
provides low conduction and switching losses. The AND series
• Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A
offers an solution for application such as induction heating (IH),
• High input impedance motor control, general purpose inverters and uninterruptible
power supplies (UPS).
• CO-PAK, IGBT with FRD : trr = 75ns (typ.)

Applications
Induction Heating, UPS, AC & DC motor controls and general
purpose inverters.

TO-264
GC E E

Absolute Maximum Ratings

Symbol Parameter FGL40N120AND Units
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ±25 V
Collector Current @TC = 25°C64 A
IC
Collector Current @TC = 100° C40 A
ICM(1) Pulsed Collector Current 120 A
IF Diode Continuous Forward Current @TC = 100° C40 A
IFM Diode Maximum Forward Current 240 A
Maximum Power Dissipation @TC = 25°C 500 W
PD
Maximum Power Dissipation @TC = 100°C 200 W
Short Circuit Withstand Time,
SCWT 10 μs
VCE = 600V, VGE = 15V, TC = 125°C
TJ Operating Junction Temperature -55 to +150 °C
TSTG Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering °C
TL 300
Purposes, 1/8” from Case for 5 seconds
Notes:
(1) Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.25 °C/W
RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 0.7 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 25 °C/W

©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGL40N120AND Rev. A
FGL40N120AND 1200V NPT IGBT

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FGL40N120AND FGL40N120AND TO-264 - - 25

Electrical Characteristics of the IGBT T C = 25°C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max. Units

Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 -- -- V
BVCES/ Temperature Coefficient of Breakdown
∆TJ VGE = 0V, IC = 1mA -- 0.6 -- V/°C
Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 1 mA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ±250 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250μA, VCE = VGE 3.5 5.5 7.5 V
IC = 40A, VGE = 15V -- 2.6 3.2 V
Collector to Emitter IC = 40A, VGE = 15V,
VCE(sat) -- 2.9 -- V
Saturation Voltage TC = 125°C
IC = 64A, VGE = 15V -- 3.15 -- V

Dynamic Characteristics
Cies Input Capacitance -- 3200 -- pF
VCE = 30V, VGE = 0V
Coes Output Capacitance -- 370 -- pF
f = 1MHz
cres Reverse Transfer Capacitance -- 125 -- pF

Switching Characteristics
td(on) Turn-On Delay Time -- 15 -- ns
tr Rise Time -- 20 -- ns
td(off) Turn-Off Delay Time VCC = 600V, IC = 40A, -- 110 -- ns
tf Fall Time RG = 5Ω, VGE = 15V, -- 40 80 ns
Eon Turn-Off Switching Loss Inductive Load, TC = 25°C -- 2.3 3.45 mJ
Eoff Turn-Off Switching Loss -- 1.1 1.65 mJ
Ets Total Switching Loss -- 3.4 5.1 mJ
td(on) Turn-On Delay Time -- 20 -- ns

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