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  • The Characteristics of A Resulting Circuit Current. A Diode Is Formed by Creation of Junction Between P

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    The characteristics of a resulting circuit current. A diode is formed by creation of junction between p-

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    14 views5 pages

    The Characteristics of A Resulting Circuit Current. A Diode Is Formed by Creation of Junction Between P

    Uploaded by

    121 07
    uuty

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
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    Gown pXPERIMENT 4: STUDY OF PN JUNCTION DIODE CHARACTERISTICS| THEORY ‘The characteristics of ‘cross the Junction and the resulting circuit cur type and mtype semeconductor mater wth ina crystal during the process Te cates UN ncton Le. Difusing, growing and alloying but eiusion process is most ised, They ere made of Germanium (Ge) r Silicon (S!) semiconductor materials ‘a. P-N Junction Diode means the graph drawn between voltage applied rent. Adiode is formed by creation of junction between P- ‘of anfacture, That is wh. commonly snces whose electrical conductivity lies in between conductors and hese pure semiconductors behave as insulators but at room ‘away from covalent bond and become free which increases ‘Semiconductors ae those subst insulators, Ac sueutute 2210 (OK), @ temperature, some electrons break conductivity “The characteristic ofa P-N junction diode means the ge the junction andthe resuting crcuitourent .ph drawn between voltage applied across, FORWARD BIAS ‘When the P side ofthe junction diode is co N side is connected to the negative terminal o forward biased as shown in the circuit diagram. li (ideally zero) to the glow of current. RSE BIAS When the P side of the junction diode is connected tothe positive terminal of the power st biased as shown in the circuit diagram. In reverse flow of current. STATIC & DYNAMIC RESISTANCE “The static resistance R is the resistance offered flowing through the diode. yanected to the positive terminal of power supply ane the the power supply then the P N junction is sald to be in forward bias, the diode will offer ow resistance ‘connected to negative terminal and the N-side is ‘upply then the_P-N junction is said to be reversed bias, the diode offers very high resistance to the by the device when only a steady DG current is device is varying above and below some average value of 2urent, the tance Ry, Larger the average value of ‘choose a small portion of linear region of Vi, Inthe current through the diode has an effective AC resistance called the dynamic willbe the dynamic resistance. To find Ror for this portion from the curve & calculate Re ‘current, smaller characteristicresistance. Find V &I PROCEDURE: 41. Connect the circuit by interconnection leads as st Forward biasing. hown in the diagram 2. Puttoggle switches for voltage at 20V DC and currant at 2 mA italy) and ‘Then f 200 mA and switch ON the power. 43, Vary DC power supply (0-3V) and note down the current in the cl between V and I to the forward characteristics. 4. And plot a graph OBSERVATION TABLE (1.1 S.No. | viveits) | _HimAl y | osov 2) | o.ov 3) 0.65V. 4) | o.68v 3) | o70v ‘The Static Resistance R, = V/I 03 04 05 Voltage > se Fig: (1.2) Forward Bias Characteristics ——$>$${T——.0O7o=

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