Vs Gb90da120u

VS-GB90DA120U
www.vishay.com
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 90 A
FEATURES
• NPT Gen 5 IGBT technology
• Square RBSOA
• HEXFRED® low Qrr, low switching energy
• Positive VCE(on) temperature coefficient
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
SOT-227 • Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance
PRODUCT SUMMARY please see www.vishay.com/doc?99912
VCES 1200 V
BENEFITS
IC DC 90 A at 90 °C
• Designed for increased operating efficiency in power
VCE(on) typical at 75 A, 25 °C 3.3 V conversion: UPS, SMPS, welding, induction heating
Speed 8 kHz to 30 kHz • Easy to assemble and parallel
Package SOT-227
• Direct mounting on heatsink
Circuit Single switch diode
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage VCES 1200 V
TC = 25 °C 149
Continuous collector current IC (1)
TC = 90 °C 90
Pulsed collector current ICM 200
A
Clamped inductive load current ILM 200
TC = 25 °C 76
Diode continuous forward current IF
TC = 90 °C 46
Gate to emitter voltage VGE ± 20 V
TC = 25 °C 862
Power dissipation, IGBT PD
TC = 90 °C 414
W
TC = 25 °C 357
Power dissipation, diode PD
TC = 90 °C 171
Isolation voltage VISOL Any terminal to case, t = 1 min 2500 V
Note
(1) Maximum collector current admitted is 100 A, to do exceed the maximum temperature of terminals
Revision: 11-Jun-15 1 Document Number: 94722

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB90DA120U
www.vishay.com
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage VBR(CES) VGE = 0 V, IC = 250 μA 1200 - -
VGE = 15 V, IC = 75 A - 3.3 3.8
Collector to emitter voltage VCE(on) VGE = 15 V, IC = 75 A, TJ = 125 °C - 3.6 3.9
V
VGE = 15 V, IC = 75 A, TJ = 150 °C - 3.7 -
VCE = VGE, IC = 250 μA 4 5 6
Gate threshold voltage VGE(th)
VCE = VGE, IC = 250 μA, TJ = 125 °C - 3.2 -
Temperature coefficient of threshold voltage VGE(th)/TJ VCE = VGE, IC = 1 mA (25 °C to 125 °C) - -12 - mV/°C
VGE = 0 V, VCE = 1200 V - 7 250 μA
Collector to emitter leakage current ICES VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 1.4 10
mA
VGE = 0 V, VCE = 1200 V, TJ = 150 °C - 6.5 20
VGE = 0 V, IF = 75 A - 3.4 5.0
Forward voltage drop, diode VFM VGE = 0 V, IF = 75 A, TJ = 125 °C - 3.2 5.2 V
VGE = 0 V, IF = 75 A, TJ = 150 °C - 3.05 -
Gate to emitter leakage current IGES VGE = ± 20 V - - ± 250 nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

Total gate charge (turn-on) Qg - 690 -
Gate to emitter charge (turn-on) Qge IC = 50 A, VCC = 600 V, VGE = 15 V - 65 - nC
Gate to collector charge (turn-on) Qgc - 250 -
Turn-on switching loss Eon - 1.2 -
Turn-off switching loss Eoff - 2.1 - mJ
Total switching loss Etot IC = 75 A, VCC = 600 V, - 3.3 -
Turn-on delay time td(on) VGE = 15 V, Rg = 5  - 250 -
Rise time tr L = 500 μH, TJ = 25 °C - 38 -
ns
Turn-off delay time td(off) Energy losses - 280 -
Fall time tf include tail and - 90 -
diode recovery
Turn-on switching loss Eon Diode used - 1.7 -
Turn-off switching loss Eoff HFA16PB120 - 4.08 - mJ
Total switching loss Etot IC = 75 A, VCC = 600 V, - 5.78 -
Turn-on delay time td(on) VGE = 15 V, Rg = 5   - 245 -
Rise time tr L = 500 μH, TJ = 125 °C - 48 -
ns
Turn-off delay time td(off) - 280 -
Fall time tf - 140 -
TJ = 150 °C, IC = 200 A, Rg = 22 
Reverse bias safe operating area RBSOA VGE = 15 V to 0 V, VCC = 900 V, Fullsquare
VP = 1200 V, L = 500 μH
Diode reverse recovery time trr - 140 - ns
Diode peak reverse current Irr IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V - 13 - A
Diode recovery charge Qrr - 860 - nC
Diode reverse recovery time trr - 210 - ns
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V,
Diode peak reverse current Irr - 19 - A
TJ = 125 °C
Diode recovery charge Qrr - 1880 - nC

VS-GB90DA120U
www.vishay.com
THERMAL AND MECHANICAL SPECIFICATIONS

Junction and storage temperature range TJ, TStg -40 - 150 °C
IGBT - - 0.145
Junction to case RthJC
Diode - - 0.35 °C/W
Case to heatsink RthCS Flat, greased surface - 0.05 -
Weight - 30 - g
Mounting torque - - 1.3 Nm
Case style SOT-227
160 160
Allowable Case Temperature (°C)
Allowable Case Temperature (°C)

140 140
120 120
DC
100 100
80 80
60 60
40 40
20 20
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100
IC - Continuous Collector Current (A) IF - Continuous Forward Current (A)

Fig. 1 - Maximum DC IGBT Collector Current vs. Fig. 3 - Allowable Forward Current vs. Case Temperature
Case Temperature Diode Leg
200 160
IC - Collector-to-Emitter Current (A)
VGE = 15 V
IF - Forward Current (A)
150 120
TJ = 125 °C
TJ = 150 °C
100 80
TJ = 150 °C
TJ = 25 °C TJ = 125 °C
TJ = 25 °C
50 40
0 0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0.0 1.0 2.0 3.0 4.0 5.0
VCE - Collector-to-Emitter Voltage (V) VFM - Forward Voltage Drop (V)
Fig. 2 - Typical Collector to Emitter Current Fig. 4 - Typical Diode Forward Voltage Drop Characteristics
Output Characteristics of IGBT

VS-GB90DA120U
www.vishay.com
100 5
VCE - Collector-to-Emitter Voltage (V)

IC - Collector-to-Emitter Current (A)
90 4.5 IC = 100 A
80
4
70 IC = 75 A
3.5
60 TJ = 125 °C
50 3
IC = 50 A
40 2.5
30 IC = 25 A
2
20 TJ = 25 °C
1.5
10
0 1
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 20 40 60 80 100 120 140 160
VGE - Gate-to-Emitter Voltage (V) TJ - Junction Temperature (°C)
Fig. 5 - Typical IGBT Transfer Characteristics Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction
Temperature, VGE = 15 V
100 5
ICES - Collector-to-Emitter Current (A)
4.5
TJ = 150 °C Eoff
10
4
Switching Energy (mJ)
3.5
1
TJ = 125 °C 3
0.1 2.5
2
Eon
0.01
1.5
TJ = 25 °C 1
0.001
0.5
0.0001 0
0 200 400 600 800 1000 1200 10 20 30 40 50 60 70 80 90 100
VCES - Collector-to-Emitter Voltage (V) IC - Collector Current (A)
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current Fig. 9 - Typical IGBT Energy Losses vs. IC
TJ = 125 °C, L = 500 μH, VCC = 600 V,
Rg = 5 , VGE = 15 V, Diode used HFA16PB120
6 1
5.5 TJ = 25 °C td(off)
VGE(th) Threshold Voltage (V)
5
Switching Time (μs)
4.5 td(on) tf
4 0.1
3.5 TJ = 125 °C
3
tr
2.5
2 0.01
0.20 0.40 0.60 0.80 1.00 0 20 40 60 80
IC (A) IC - Collector Current (A)
Fig. 7 - Typical IGBT Threshold Voltage Fig. 10 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, L = 500 μH, VCC = 600 V,
Rg = 5 , VGE = 15 V, Diode used HFA16PB120

VS-GB90DA120U
www.vishay.com
14 3000
VR = 200 V
Eon
12 IF = 50 A
2500
Energy Losses (mJ)
10
2000
Qrr (nC)
8 Eoff 125 °C
6
1500
4
25 °C
1000
2
0 500
0 10 20 30 40 50 100 1000
Rg (Ω) dIF/dt (A/μs)
Fig. 11 - Typical IGBT Energy Loss vs. Rg, Fig. 14 - Stored Charge vs. dIF/dt of Diode
TJ = 125 °C, IC = 75 A, L = 500 μH,
VCC = 600 V, VGE = 15 V, Diode used HFA16PB120
10 000 40
VR = 200 V
35 IF = 50 A
Switching Time (µs)
td(on) 30
1000
td(off)
IRR (A)
25
125 °C
tf 20
100
tr 15
25 °C
10
10 5
0 10 20 30 40 50 100 1000
RG (Ω) dIF/dt (A/μs)
Fig. 12 - Typical IGBT Switching Time vs. Rg Fig. 15 - Typical Reverse Recovery Current vs. dIF/dt of Diode
TJ = 125 °C, L = 500 μH, VCC = 600 V,
Rg = 5 , VGE = 15 V
300
VR = 200 V
IF = 50 A
250
125 °C
200
trr (ns)
25 °C
150
100
50
100 1000
dIF/dt (A/μs)
Fig. 13 - Typical trr Diode vs. dIF/dt

VRR = 200 V, IF = 50 A

VS-GB90DA120U
www.vishay.com
ZthJC - Thermal Impedance

Junction to Case (°C/W)
0.1 0.75
0.50
PDM
0.25
0.1 t1
0.05 t2
0.01 0.02
DC Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.001
0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (s)

Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
1
ZthJC - Thermal Impedance
Junction to Case (°C/W)
0.75
0.50
0.1 0.25
PDM
0.1
0.05 t1
0.02 t2
0.01
DC
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.001
0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (s)

Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode)
1000
100
IC (A)
10
1
10 100 1000 10 000
VCE (V)
Fig. 18 - IGBT Reverse Bias SOA, TJ = 150 °C, VGE = 15 V,

VS-GB90DA120U
www.vishay.com
VCC
R=
ICM
L D.U.T.
VC *
50 V
1000 V
+
-V
1 D.U.T. CC
2
Rg
* Driver same type as D.U.T.; VC = 80 % of Vce(max.)

* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
Fig. 19a - Clamped Inductive Load Test Circuit Fig. 19b - Pulsed Collector Current Test Circuit
Diode clamp/
D.U.T.
L
- +
-5V +
D.U.T./ -
VCC
driver
Rg
Fig. 20a - Switching Loss Test Circuit
2
90 %
3 10 %
VC
90 %
td(off)
10 %
5%
IC
tr tf
td(on) t = 5 µs
Eon Eoff
Ets = (Eon + Eoff)
Fig. 20b - Switching Loss Waveforms Test Circuit

VS-GB90DA120U
www.vishay.com
ORDERING INFORMATION TABLE
Device code VS- G B 90 D A 120 U
1 2 3 4 5 6 7 8
1 - Vishay Semiconductors product

2 - Insulated Gate Bipolar Transistor (IGBT)
3 - B = IGBT Generation 5
4 - Current rating (90 = 90 A)
5 - Circuit configuration (D = Single switch with antiparallel diode)
6 - Package indicator (A = SOT-227)
7 - Voltage rating (120 = 1200 V)
8 - Speed/type (U = Ultrafast IGBT)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT CIRCUIT DRAWING
CONFIGURATION CODE
3 (C)
Lead Assignment
4 3
Single switch with

D
antiparallel diode
2 (G)
1 2
1, 4 (E)
LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95423
Packaging information www.vishay.com/doc?95425

Outline Dimensions
www.vishay.com
SOT-227 Generation II
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Ø 4.10 (0.161) 4 x M4 nuts
-A-
Ø 4.30 (0.169)
6.25 (0.246) 25.70 (1.012)

12.50 (0.492) 6.50 (0.256) 24.70 (0.972)
13.00 (0.512) -B-
7.45 (0.293) R full 2.10 (0.083)

7.60 (0.299) 2.20 (0.087)
14.90 (0.587)
15.20 (0.598)
30.50 (1.200)
29.80 (1.173)
31.50 (1.240)
32.10 (1.264)
8.30 (0.327) 0.25 (0.010) M C A M B M

4x
7.70 (0.303)
2.20 (0.087) 4.10 (0.161)

1.90 (0.075) 4.50 (0.177) 12.30 (0.484)
11.70 (0.460)
-C-
0.13 (0.005)
25.00 (0.984)
25.50 (1.004)
Note
• Controlling dimension: millimeter
Revision: 02-Aug-12 1 Document Number: 95423

Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12 1 Document Number: 91000

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VS-GB90DA120U

ABSOLUTE MAXIMUM RATINGS

Revision: 11-Jun-15 1 Document Number: 94722

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

Revision: 11-Jun-15 2 Document Number: 94722

THERMAL AND MECHANICAL SPECIFICATIONS

Allowable Case Temperature (°C)

IC - Continuous Collector Current (A) IF - Continuous Forward Current (A)

VCE - Collector-to-Emitter Voltage (V) VFM - Forward Voltage Drop (V)

Revision: 11-Jun-15 3 Document Number: 94722

VCE - Collector-to-Emitter Voltage (V)

VGE - Gate-to-Emitter Voltage (V) TJ - Junction Temperature (°C)

IC (A) IC - Collector Current (A)

Revision: 11-Jun-15 4 Document Number: 94722

Rg (Ω) dIF/dt (A/μs)

Fig. 13 - Typical trr Diode vs. dIF/dt

Revision: 11-Jun-15 5 Document Number: 94722

ZthJC - Thermal Impedance

Rectangular Pulse Duration (s)

Rectangular Pulse Duration (s)

Revision: 11-Jun-15 6 Document Number: 94722

* Driver same type as D.U.T.; VC = 80 % of Vce(max.)

Fig. 20a - Switching Loss Test Circuit

Ets = (Eon + Eoff)

Fig. 20b - Switching Loss Waveforms Test Circuit

Revision: 11-Jun-15 7 Document Number: 94722

Device code VS- G B 90 D A 120 U

1 - Vishay Semiconductors product

Single switch with

LINKS TO RELATED DOCUMENTS

Revision: 11-Jun-15 8 Document Number: 94722

6.25 (0.246) 25.70 (1.012)

7.45 (0.293) R full 2.10 (0.083)

8.30 (0.327) 0.25 (0.010) M C A M B M

2.20 (0.087) 4.10 (0.161)

Revision: 02-Aug-12 1 Document Number: 95423

Material Category Policy

Revision: 02-Oct-12 1 Document Number: 91000

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