Name: Richie Martin A.

Lat
Section/ Group: BSEE-III/GJ

Experiment No: 2

THE MOSFET TRANSISTOR

The MOSFET transistor (Metal-Oxide Semiconductor FET) has a source or sources, a

graduator (or hatch), and a drain or bleeder. The graduator is insulated from the channel,
therefore the current of the graduator is extremely small, making no difference if it is positive or
negative. In this chapter, the MOSFET, its bases, its polarization and their use are studied.

1. Depletion type MOSFET

Figure 1 shows a MOSFET of channel type n, a conducting bar of material type n with a
region type p to the right and a graduator or insulated hatch on the left. The free electrons can
flow from the source or sources to the drain through the material type n. The region type p is
called substrate (or body); this reduces physically the conduction path to a narrow channel. The
electrons that flow from the source or sources to the drain must pass through this channel.

Figure 1
To the left of the channel, a thin layer of Silicon Oxide (SiO2) is deposited, which is an
insulator. Since the graduator is insulated from the channel, the current in the graduator is
negligible, even when the voltage of the graduator is positive.

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1.1. Depletion mode

Figure 2 shows a MOSFET with graduator or hatch negatively polarized. The power
supply, VDD, forces the free electrons to flow from the source to the drain. These electrons flow
through the narrow channel to the left of the substrate type p.
The voltage of the graduator can control the channel width. The more negative the
voltage in the graduator is, the smaller the current of the drain will be. When the voltage of the
graduator is negative enough, the current of the drain is cut off, since the graduator negative
voltage effect consists of "impoverishing" the free electrons of the channel. The operation with
negative graduator is called depletion or narrowing mode.

Figure 2

1.2. Enhancement mode

Since the graduator of a MOSFET is insulated from the channel, we can apply a
positive voltage to it, as it is shown in figure 3.1.3. The positive voltage inthe graduator
increases the number of free electrons that flow through the channel. The more positive the
voltage in the graduator is, the better the conduction from the source to the drain will be. The
operation of the MOSFET with a positive graduator voltage is based on the channel
conductivity enhancement. For this reason, the operation with positive graduator is called
enhancement or widening mode.

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 Figure 3

In anyone of the operation modes, on account of the insulating layer, the current that
flows through the graduator or hatch is negligible. The input resistance of a MOSFET is
incredibly high, usually about 10.000 MΩ to 10.000.000 MΩ.

1.3. Drain curves

Figure 4 shows the typical drain curves for a MOSFET of channel n, together with the
CC load line for a circuit in source or common source configuration. Notice how the curves of
the upper part have a positive voltage VGS and those of the lower part have a negative voltage
VGS. The drain curve that is found in the bottommost part is when VGS=VGS (off). Throughout
this curve, the drain current is approximately zero. When the voltage VGS is between VGS (off)
and zero, the depletion or narrowing mode of operation is obtained. On the other hand, when the
voltage VGS is above zero the enhancement or widening mode of operation is obtained.

Figure 4

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1.4. Transconductance curve

Figure 5 shows the transconductance curve of a MOSFET. IDSS that represents the drain
current when the graduator is in short-circuit.

Figure 5

The MOSFET just described is called MOSFET of depletion or narrowing type; it

can have drain current either in the depletion mode or in enhancement. Since this type of
MOSFET conducts when VGS=0, it is also known as normally conducting or normally lit
MOSFET.

1.5. System of symbols

Figure 6 shows the symbol, which represents a MOSFET of depletion channel type n.
The vertical line that represents the channel is on the right of the graduator or hatch. The
terminal of the drain comes from the upper part of the channel and the terminal of the source,
or sources, is connected to the lower part. The arrow in the substrate type p points to the type
n material of the channel. In some applications, a voltage can be supplied to the substrate to
have more control over the drain current. For this reason, some MOSFET have four external
terminals.
In most of the applications, the substrate is connected to the source or sources.
Usually, the manufacturer connects internally the substrate to the source; the result is a device
with three terminals whose symbol is shown in figure 6.

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 Figure 6

There is also a MOSFET of the depletion (narrowing) type with channel type p. It
consists of a bar of material type p with a region type n on the right, and a graduator or
insulated hatch on the left. The conventional symbol for a MOSFET with channel type p is
similar to the one of the MOSFET with channel type n, except that the arrow points outward.
The action of a MOSFET of channel type p is complementary, that is to say, all the voltages
and currents are inverted.

1.6. Polarization of the depletion type MOSFET

Since a MOSFET of the depletion type can operate either in the depletion mode or in
the one of enhancement, the point Q can be fixed in VGS=0, as it was shown in figure 5.
Therefore, an alternating signal applied to the gate produces variations above and below the
point Q.

2. MOSFET of the enhancement type

If the internal structure of a MOSFET of channel type n is changed, a new type of

MOSFET can be obtained, able to conduct only in the enhancement mode. This type of
MOSFET is widely used in microprocessors and computer memories because it behaves like
a normally open switch. To obtain drain current, a positive voltage must be applied in the
graduator hatch.

2.1. Formation of the inverse layer

Figure 7 shows a MOSFET of the enhancement widening type ofchannel type n. The
substrate extends to the Silicon Oxide; physically, a channel type n between the source or
source and the drain is no longer available.

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 Figure 7

Figure 7 shows the normal polarization polarities. When VGS = 0, the power supply
VDD tries to force the passage of the free electrons from the source to the drain, but the
substrate type p only has a few electrons thermally produced in the conduction band. Except
for these minority bearers and for some superficial leaks, the current between source or
sources and drain is zero. For this reason, the MOSFET of the enhancement type is also
known as not normally conducting or normally turned off MOSFET.

When the graduator or hatch is positive, it induces negative charges in the substrate
type p. This means that it can attract enough free electrons to form a thin layer of electrons
between the source or sources and the drain.
When the voltage in the graduator is positive enough, all the spaces close to the
Silicon Oxide are filled, so the free electrons begin to flow from the source to the drain. The
effect is equivalent to creating a thin layer of material type n next to the silicon oxide. This
layer of free electrons is called inverse layer type n.

2.2. Threshold voltage

The minimal voltage VGS created by the inverse layer type n is called threshold
voltage VGS(th). When VGS is less than VGS(th), no current flows from thesource, or sources, to
the drain.

If VGS is greater than VGS(th), the inverse layer type n connects the source to the drain,
and current flows.

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 VGS(th) can vary from a value of less than 1V to one greater than 5V, depending on the
particular device that is being used.

2.3. Drain curves

Figure 3.1.8 shows a family of drain curves for a MOSFET of the enhancement type
of channel n, together with a load line with CC for a circuit in source configuration. The
lowest curve is the curve of VGS(th). When VGS is less than VGS(th), the drain current is extremely
small. When VGS is bigger than VGS(th) a considerable current flows, whose value depends on
VGS.

Figure 8

2.4. Transconductance curve

Figure 9 shows the transconductance curve. The curve is parabolic or of quadratic

law. The vertex of the parabola is in VGS(th).

Figure 9

2.5. Diagrammatical symbol

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 When VGS = 0, the MOSFET of the enhancement or widening type does not conduct
because there is no conducting channel between the source or sourcesand the drain. The
diagrammatical symbol of the figure 10 has the line of the channel dotted to indicate the
normal condition of no conducting. The arrow points to the inverse layer type n, which
operates as a channel n when the device is conducting.
There is also a MOSFET of the enhancement or widening type of channel p. The
diagrammatical symbol is similar, except that the arrow points outward. In a MOSFET of the
enhancement type with channel p, all the voltages and currents are opposite to that of the
MOSFET of the enhancement type with channel n.

Figure 10

2.6. Maximum voltage graduator source

The MOSFET of the depletion and enhancement type has a thin layer of insulating
silicon oxide, which avoids the graduator current for graduator voltages forpositive as well as
for negative ones. Since the insulating layer is very thin, it is easy to destroy it if an excessive
graduator - source voltage is applied.

The thin insulating layer can be damaged in other ways, in addition to the direct
application of an excessive voltage VGS. If a MOSFET is withdrawn or inserted in a circuit
when the power supply is connected, the transient voltages caused by inductive inversions
and other effects can exceed the nominal voltage V GS(max) and leave the MOSFET useless.
Even upon picking up a MOSFET with the hand can induce a static charge that exceeds the
nominal voltage VGS(max).
Some MOSFET are protected with an internal Zener diode that is connected between
the graduator and the source. The Zener voltage is less than the nominal voltage V GS(max).
Therefore, the Zener diode is destroyed before any damage is done to the thin insulating

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layer.

3. Practice 4: Study of the MOSFET transistor

3.1. Circuits 3 and 4

Circuit 3 is a MOSFET transistor type n with an input resistance of 1 K andtwo Zener

diodes of 15 V between gate and source that protect it from too high voltages.

Circuit 4 is a MOSFET transistor type p with the same additional elements as the
previous circuit.

Figure 11

3.2. Practice carrying out

Remember that for a correct operation of all the circuits, the failure switches should
be in the position N, that is to say, downward.
To carry out the practice make the following assembly (figure 12):
• Set an ammeter to measure the drain-source current between points 3.4 and 10.3.
• Set the voltmeter of circuit 1 in its intermediate position.
• Put a link between points 10.1 and 10.2.
• Feed the circuit by pressing the switch of the base box EBC-100.

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 Figure 12

With a voltmeter measure the voltage between gate and source and select little by
little the values from table 1. Measure the current I DS and make a noteof it.
VGS IDS
1.8 V 0.05 mA
2.0 V 0.29 mA
2.2 V 3.17 mA
2.4 V 12.21 mA
2.6 V 36.77 mA
2.8 V 63.3 mA
3.0 V 80.9 mA
3.2 V 81.3 mA
Table 1

C2.1. Which is approximately the threshold voltage value?

2.8 V

C2.2. Which is the value of the maximum current consumed by the lamp?
81.3 mA

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Controlling the voltage that is supplied to the transistor by the gate using the voltmeter of the
circuit 1, fill in table 2. (P is the power dissipated by the transistor). On the last low, make a note
of the obtained results for the maximum consumption situation.

IDS IG VDS P
0 mA 0 mA 11.83 V 0 mW
10 mA 0 mA 11.59 V 115 900 mW
20 mA 0 mA 10.94 V 218 800 mW
30 mA 0 mA 9.79 V 293 700 mW
40 mA 0 mA 8.46 V 338 400 mW
50 mA 0 mA 6.83 V 341 500 mW
60 mA 0 mA 4.874 V 292 440 mW
70 mA 0 mA 2.925 V 204 750 mW
80 mA 0 mA 0.7 V 56 000 mW
181.3 mA 0 mA 368 V 29 918 mW
Table 2

C2.3. Which is the power dissipated when I DS is 20 mA?

218 800 mW

The current consumed by the lamp can be controlled through the voltage control in
the gate. An easy way is to send a train of modulated pulses in width sothat the superior
voltage of the pulse will be capable of making the transistor to conduct totally.

In the practice board, circuit 6 is a pulse generator. Using the voltmeter PT6.1, the
frequency can be modulated, and through PT6.2 the width of the positive part.
To appreciate properly this type of control you will need an oscilloscope.

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 Figure 13

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 Carry out the assembly of figure 3.2.3. Check how the luminous intensity varies when
varying the frequency and the width of the pulse. Notice how it must have a high frequency
so as not to observe a blink effect and that, in this case, the pulse width determines the
current consumed.
Select a frequency of 50 Hz with the voltmeter PT6.1. With PT6.2 vary, little by little,
the width of the pulse; fill in table 3.2.3.
Positive Fractionof Voltage in Current in Power in the
the pulse the load the load load
20 % 2.5 V 25.29 mA 63 225 mW
40 % 5V 41.63 mA 208 150 mW
60 % 7.3 V 56.01 mA 408 873 mW
80% 9.5 V 69.9 mA 532 095 mW
100% 12.5 V 84 mA 1 050 000mW
Table 3

C2.4. Which is the value of the current consumed by the lamp when the pulse frequency is of 50
Hz and the width is 40% of the period?

41. 63 mA

The study of the channel P MOSFET transistor is totally analogous to thatof channel
n. The following practice is almost the same.
To carry out the practice make the following assembly (figure 14):
• Set an ammeter to measure the drain-source current between points 4.4 and 10.3.
• Set the voltmeter of the circuit 1 in the intermediate position.
Connect a bridge between points 10.1 and 10.2.

Figure 14

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 Measure the voltage between the gate and the source with a voltmeter and select little
by little the values from table 4. Measure the current IDS and make a note of it.
VGS IDS VGS IDS
-2.5 V 78.4 mA 4.6 V 43. 15 mA
-3.0 V 80.4 mA 4.8 V 42. 82 mA
-3.1 V 80.7 mA 5.0 V 40.76 mA
-3.2 V 81.3 mA 5.2 V 39.23 mA
-3.3 V 81.6 mA 5.4 V 37.96 mA
-3.4 V 81.8 mA 5.6 V 36.59 mA
-4.0 V 82.6 mA 5.8 V 35.07 mA
Table 4

C2.5. What is the approximate value of the threshold voltage?

4.6 V

Controlling the voltage that is supplied to the transistor through the gate using the
voltmeter of circuit 1, fill in table 5. (P is the power dissipated by the transistor). In the last
column write the values for the maximum consumption.
IDS IG VDS P
0 mA 0 mA 11.83V 0 mW
-10 mA 0 mA 11.59 V -115 900mW
-20 mA 0 mA 11.24 V -224 800 mW
-30 mA 0 mA 10.12 V -303 600 mW
-40 mA 0 mA 8.65 V 346 000 mW
-50 mA 0 mA 7.06 V -353 000 mW
-60 mA 0 mA 5.382 V -322 920 mW
-70 mA 0 mA 3.2474 V -227 318 mW
-80 mA 0 mA 1.111 V 88 880 mW
Table 5

C2.6. Which is the dissipated power when IDS is -20 mA?

-224 800 mW

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 Figure 15

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 Carry out the assembly of figure 15. Check how the luminous intensity varies when
the frequency and the width of the pulse are changed. Notice how it must have a high
frequency for a blinking effect not to be noticed, and that in this case the pulse width
determines the current consumed.
Select a frequency of 50 Hz with the voltmeter PT6.1. With PT6.2 vary the width of
the pulse and fill in table 3.2.6.
Positive Fraction Voltage in Current in Power in
of the pulse the load the load the load
0.2 6.9 V 58.5mA 0.4037W
0.4 5.3 V 48.51 mA 0.2571 W
0.6 3.8 V 37.76 mA 0.1435 W
0.8 2.3 V 26.54 mA 0.0610 W
1 0.8 V 21.85 mA 0.0175 W
Table 6
C2.7. Which is the value of the current consumed by the lamp when the pulse frequency is of 50
Hz and the width is 40% of the period?

48.51 mA

C2.8. What do you notice in the channel P transistor regarding the one of the channel N in this
last assembly?

A. That the N conducts worse.

B. That the P conducts worse.

C. That the P conducts in the lower part of the pulse.

D. That the N conducts in the lower part of the pulse.

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Circuit Diagram:

Figure 16 Circuit Diagram

ELEMENT VALUE
R1.1 390 Ω
PT1.1 5 KΩ
R3.1 1 KΩ
D3 ZENER 1.5V
D3 ZENER 1.5V
Q3.1 VN10KM
LAMP LED
Table 7 Circuit 2 Components

Figure 17 Multisim diagram

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 ELEMENT VALUE
R6.1 15 KΩ
R6.2 100 KΩ
R1.1 100 Ω
R6.4 2.2 KΩ
R6.5 1 KΩ
R6.6 1.8 KΩ
PT1.1 100 KΩ
PT6.2 100 KΩ
C6.1 1µF
U6.1 NE555
U6.2 LM311
Q6.1 BC327

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 Figure 18 Multisim Diagram

Figure 19 P Channel MOSFET

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