STD/SDT200

Thyristor-Diode Modules, Diode-Thyristor Modules

Dimensions in mm (1mm=0.0394")
Type VRSM VRRM
VDSM VDRM
V
V
STD/SDT200GK08 900 800
STD/SDT200GK12 1300 1200
STD/SDT200GK14 1500 1400
STD/SDT200GK16 1700 1600
STD/SDT200GK18 1900 1800

Symbol Test Conditions Maximum Ratings Unit

ITRMS, IFRMS TVJ=TVJM 314
ITAVM, IFAVM TC=85oC; 180o sine 200 A

TVJ=45oC t=10ms (50Hz), sine 8000

VR=0 t=8.3ms (60Hz), sine 8500
ITSM, IFSM A
TVJ=TVJM t=10ms(50Hz), sine VR=0 7000
t=8.3ms(60Hz), sine 7600
TVJ=45oC t=10ms (50Hz), sine 38000
VR=0 t=8.3ms (60Hz), sine 34000
i2dt A2s
TVJ=TVJM t=10ms(50Hz), sine VR=0 30000
t=8.3ms(60Hz), sine 27000
TVJ=TVJM repetitive, IT=750A 250
f=50Hz, tp=200us
(di/dt)cr VD=2/3VDRM 800 A/us
IG=1A non repetitive, IT=200A
diG/dt=1A/us
TVJ=TVJM; VDR=2/3VDRM
(dv/dt)cr RGK= ; method 1 (linear voltage rise) 1000 V/us

TVJ=TVJM tp=30us IT=ITAVM 120

PGM tp=500us 60 W

PGAV 20 W

VRGM 10 V

TVJ -40...+130
TVJM 125 oC

Tstg -40...+130
50/60Hz, RMS t=1min 3000
VISOL IISOL<1_ mA t=1s 3600 V~
 STD/SDT200
Thyristor-Diode Modules, Diode-Thyristor Modules

Mounting torque (M5) 2.5-5/22-44

Md Terminal connection torque (M8) 12-15/106-132 Nm/lb.in.

Weight Typical including screws 320 g

 STD/SDT200
Thyristor-Diode Modules, Diode-Thyristor Modules

Symbol Test Conditions Characteristic Values Unit

IRRM TVJ=TVJM; VR=VRRM; VD=VDRM 70 mA

IDRM 40 mA

VT, VF IT, IF=600A; TVJ=25oC 1.50 V

VTO For power-loss calculations only (TVJ=140oC) 0.95 V

rT 1.0 m

VD=6V; TVJ=25oC 2
VGT TVJ=-40oC 3 V

VD=6V; TVJ=25oC 150

IGT TVJ=-40oC 200 mA

VGD TVJ=TVJM; VD=2/3VDRM 0.25 V

IGD 10 mA

TVJ=25oC; tp=30us; VD=6V

IL IG=0.45A; diG/dt=0.45A/us 300 mA

IH TVJ=25oC; VD=6V; RGK= 150 mA

TVJ=25oC; VD=1/2VDRM
tgd IG=1A; diG/dt=1A/us 2 us

TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us typ.

tq VR=100V; dv/dt=50V/us; VD=2/3VDRM 200 us

QS TVJ=125oC; IT, IF=400A; -di/dt=50A/us 760 uC

IRM 275 A

per thyristor/diode; DC current 0.140

RthJC per module 0.070 K/W

per thyristor/diode; DC current 0.180

RthJK per module 0.090 K/W

dS Creeping distance on surface 12.7 mm

dA Strike distance through air 9.6 mm

a Maximum allowable acceleration 50 m/s2

FEATURES ceramic base plate * Planar passivated chips

* International standard package* * Isolation voltage 3600 V~
Direct copper bonded Al2O3-
 STD/SDT200
Thyristor-Diode Modules, Diode-Thyristor Modules

APPLICATIONS * Power converter * Simple mounting

ADVANTAGES * Heat and temperature control for * Improved temperature and
power industrial furnaces and chemical cycling
* Motor control * Space and weight
savings processes * Reduced protection circuits
* Lighting control
* Contactless switches
 STD/SDT200
Thyristor-Diode Modules, Diode-Thyristor Modules

Fig. 1 Surge overload current Fig. 2 i2t versus time (1-10 ms) Fig. 2a Maximum forward current
ITSM, IFSM: Crest value, t: duration at case temperature

Fig. 3 Power dissipation versus on-state current and ambient temperature Fig. 4 Gate trigger characteristics
(per thyristor or diode )

3 x STD/SDT
200
 STD/SDT200
Thyristor-Diode Modules, Diode-Thyristor Modules

Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current Fig. 6 Gate trigger delay time and ambient
temperature
Fig. 7 Three phase AC-controller: Power
dissipation versus RMS output current
and ambient temperature

3 x STD/SDT
200
 STD/SDT200
Thyristor-Diode Modules, Diode-Thyristor Modules