BC 617

BC 618

NPN Silicon Darlington Transistors BC 617

BC 618

● High current gain

● High collector current

3
1

Type Marking Ordering Code Pin Configuration Package1)

1 2 3
BC 617 – Q62702-C1137 C B E TO-92
BC 618 Q62702-C1138

Maximum Ratings
Parameter Symbol Values
BC 617 BC 618 Unit
Collector-emitter voltage VCE0 40 55 V
Collector-base voltage VCB0 50 80
Emitter-base voltage VEB0 12
Collector current IC 500 mA
Peak collector current ICM 800
Base current IB 100
Peak base current IBM 200
Total power dissipation, TC = 66 ˚C Ptot 625 mW
Junction temperature Tj 150 ˚C
Storage temperature range Tstg – 65 … + 150

Thermal Resistance

Junction - ambient Rth JA ≤ 200 K/W

Junction - case2) Rth JC ≤ 135

1) For detailed information see chapter Package Outlines.

2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.

Semiconductor Group 1 5.91

 BC 617
BC 618

Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

DC characteristics
Collector-emitter breakdown voltage V(BR)CE0 V
IC = 10 mA
BC 617 40 – –
BC 618 55 – –
Collector-base breakdown voltage V(BR)CB0
IC = 100 µA
BC 617 50 – –
BC 618 80 – –
Emitter-base breakdown voltage V(BR)EB0 12 – –
IE = 10 µA
Collector cutoff current ICB0
VCB = 40 V BC 617 – – 100 nA
VCB = 60 V BC 618 – – 100 nA
VCB = 40 V, TA = 150 ˚C BC 617 – – 10 µA
VCB = 60 V, TA = 150 ˚C BC 618 – – 10 µA

Emitter cutoff current IEB0 – – 100 nA

VEB = 4 V
DC current gain hFE –
IC = 100 µA; VCE = 5 V BC 617 4000 – –
BC 618 2000 – –
IC = 10 mA; VCE = 5 V1) BC 617 10000 – –
BC 618 4000 – –
IC = 200 mA; VCE = 5 V1) BC 617 20000 – 70000
BC 618 10000 – 50000
IC = 1000 mA; VCE = 5 V1) BC 617 10000 – –
BC 618 4000 – –
Collector-emitter saturation voltage1) VCEsat – – 1.1 V
IC = 200 mA; IB = 0.2 mA
Base-emitter saturation voltage1) VBEsat – – 1.6
IC = 200 mA; IB = 0.2 mA

1) Pulse test: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group 2
 BC 617
BC 618

Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

AC characteristics
Transition frequency fT – 150 – MHz
IC = 50 mA, VCE = 5 V, f = 20 MHz
Output capacitance Cobo – 3.5 – pF
VCB = 10 V, f = 1 MHz

Total power dissipation Ptot = f (TA; TC) Collector cutoff current ICB0 = f (TA)
VCB = 40 V, 60 V

Semiconductor Group 3
 BC 617
BC 618

Permissible pulse load RthJA = f (tp) Transition frequency fT = f (IC)

VCE = 5 V, f = 20 MHz

Collector-emitter saturation voltage Base-emitter saturation voltage

VCEsat = f (IC) VBEsat = f (IC)
hFE = 1000, parameter = TA hFE = 1000, parameter = TA

Semiconductor Group 4
 BC 617
BC 618

DC current gain hFE = f (IC) Capacitance C = f (VEB, VCB)

Semiconductor Group 5
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