Q_T1%%)TAB BOOKS / No. 796 64.

95

FET
UIDEBOOK-

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MOSFET CIRCUITS
GUIDEBOOK-
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MOSFET CIRCUITS
GUIDEBOOK -
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TAB BOOKS
Blue Ridge Summit, Pa. 17214
 75-27483 Number: Card Congress of Library
0-8306-4796-1 No. Book Standard International Edition: Paperbound
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herein. information the of
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America of
States United the in Printed
BOOKS TAB by 1975 c
Copyright
1975 PRINTING-OCTOBER FIRST
EDITION FIRST
 Contents

Preface 9

Chapter 1
Meet The MOSFET 11
Description of mosFET-Operating Modes-Advantages and Dis-
advantages-Gate-Protected MOSFET-MOSFETS Used in This
Book-Hints and Precautions

Chapter 2
AF Amplifiers 18
Single -Stage RC -Coupled Amplifier-High-Gain Single -Stage
Amplifier-Two-Stage High -Gain Amplifier-Degenerative
Amplifier-Source Follower-MosFET-Bipolar Amplifier with
AGC-MOSFET Input For IC Amplifier-Dual-Input AF
Mixer-Dual-MosFEr Phase Inverter-Paraphase Amplifier-
Gated-On Amplifier-Gated-Off Amplifier-LC-Tuned Low -Pass
Amplifier-RC-Tuned Low -Pass Amplifier-LC-Tuned High-
Pass Amplifier-RC-Tuned High -Pass Amplifier-LC-Tuned
Peak Amplifier-RC-Tuned Peak Amplifier-LC-Tuned Notch
Amplifier-RC-Tuned Notch Amplifier-Headphone Amplifier-
Peaked-Response Headphone Amplifier

Chapter 3
DC, RF, And IF Amplifiers 60
DC Amplifier-DC Voltage Amplifier-DC Galvanometer
Amplifier-DC Source Follower-General-Purpose RF
Amplifier-Single-Ended Transmitter -Type RF Amplifier-
Push-Pull Transmitter -Type RF Amplifier -100 MHz RF
Amplifier-Single-Tuned IF Amplifier-Double-Tuned IF
Amplifier-Regenerative IF Amplifier-Video ( Wideband )
Amplifier
194 Index
Modulator Reactance
Doubler- Transmitter-Frequency "QRP" Flea-Power
Eliminator- Meter-Heterodyne Mixer-Tuning Receiver-RF
Regenerative Receiver-All-Wave Broadcast Regenerative
Receiver- -Beam Light Receiver-Sensitive -Beam Light
Modulator-Simple Pickup-Balanced Flip-Flop-Supersonic
(Electroscope)- Detector Adapter-Charge -Current Constant
170 Circuits Miscellaneous
7 Chapter
Monitor Monitor-CW verter-AM
Con- -Wave Square to Meter-Sine- Light Detector-Sensitive
Null Checker-AC LC Probe-Wide-Range Voltmeter-Active
AC For Adapter -Tracer Signal Tracer-AF Signal RF-IF
Tracer-Tuned Signal Standard-AF-RF Frequency Excited
Voltmeter-Self- DC Electronic Voltmeter-Center-Zero DC
Electronic Voltmeter-Balanced DC Electronic Single-MosFET
145 Instruments Test
6 Chapter
Oscillators IF Oscillator-Crystal-Controlled
IF Oscillator-Self-Excited RF Oscillator-Sun-Powered
Crystal Oscillator-Pierce Crystal Oscillator-Standard
Colpitts RF Oscillator-Self-Excited Hartley RF Excited
Oscillator-Self- -Coil Tickler RF Oscillator-Self-Excited
Audio Oscillator-Multivibrator-Sun-Powered Audio
Oscillator-Villard Audio Oscillator-Wien-Bridge Audio Shift
Oscillator-Phase- Audio Oscillator-Franklin Audio Colpitts
Oscillator- Audio Oscillator-Hartley Audio -Type Tickler
116 Oscillators
5 Chapter
Adapter Output Converter-Dual-Polarity Impedance
Inverter-DC Signal Circuit-DC OR Circuit-Logic AND Logic
Alarm- -Failure Carrier Shifter-Sensitive Phase Step-Type
Shifter- Phase Variable Timer-Continuously Switch-Interval
Relay-Sound Relay-Capacitance Relay-Touch-Plate
Relay-Coincidence AF Relay-RC-Tuned AF LC-Tuned
Relay- AF Relay-Sensitive RF Relay-AC DC -CurrentZero
81 Devices and Circuits Control
4 Chapter
 Preface

The metal -oxide -semiconductor field-effect transistor,

abbreviated MOSFET, is easily applied to electronic circuits of
various types. In several respects, the MOSFET resembles the
vacuum tube more closely than do the bipolar transistor and
the conventional field-effect transistor, and this feature
enables some circuits to be more easily transistorized.
This book offers a collection of tested MOSFET circuits,
many of them employing only one transistor. These are
largely old vacuum -tube favorites of experimenters and
hobbyists. adapted to the MOSFET. Very little space is devoted
to MOSFET theory: the reader is assumed to know already how
a regular field-effect transistor works and to need only a brief
fill-in on special features of the MOSFET.
For convenience, the circuits are grouped into
conventional categories: amplifiers, oscillators, instruments,
and so on. Each chapter is completely self-contained, so that
the reader is not forced to refer to prior sections. The selected
circuits are practical, and they offer an excellent opportunity
to get acquainted with the MOSFET.
General instructions for handling, installing, and using
MOSFETS of the type shown in this book are given in Chapter 1
under the heading Hints and Precautions, and the reader
should study these carefully before starting his experiments.

Rufus P. Turner
 Chapter 1
Meet The MOSFET

This chapter describes the principal features of the MOSFET.

Since the reader is assumed to know how a conventional
field-effect transistor works and is structured, no space is
devoted here to basic theory. Only those MOSFET features are
discussed that the reader must be familiar with in order to use
this device safely and effectively. For additional material,
both theoretical and practical, the reader is referred to the
considerable literature on field-effect devices.
The instructions for handling and using the MOSFET should
be read carefully by newcomers to MOSFET practice before
they experiment with the device.

DESCRIPTION OF MOSFET
The MOSFET ( metal -oxide -semiconductor
field-effect
transistor) is a special type of field-effect transistor in which
the gate electrode is a small metal plate insulated from the
substrate by a thin film of silicon dioxide. The gate leakage
current-as low as 10 picoamperes ( 10 -11 ampere) in some
models-is much less than that in the junction FET and results
in an input resistance comparable to that of the vacuum tube.
To all practical intents and purposes, therefore, the MOSFET,
like the vacuum tube, is essentially a voltage -actuated device.
Figure 1-1 shows the basic structure of an N -channel
MOSFET. Although this may not be the
precise cross section of a
particular unit, it illustrates the main differences between
MOSFETs and conventional junction FETs.
In this sketch, the
various regions are not to scale. In the P -type silicon wafer

11
 12
employed, is bias gate negative a mode, depletion the In mode.
depletion-enhancement and mode, enhancement mode,
depletion MOSFETs: for modes operating three are There
MODES OPERATING
circuits. -controlled AGO and
doubler, -push push mixer, converter, in useful particularly
is device -gate dual The plate. one and grids control
two has which 6AE7-GT, type as such tube a to comparable is
MOSFET -gatedual the thus, drain; one and gates two are there
that Note, MOSFET. -gate dual a of symbol circuit the shows
1-2B Figure unit. -gate dual a is 3N140 type and unit, -gate single
a is example, for 3N128, Type available. commercially
are both MOSFETS -gate dual and MOSFETS -gateSingle
positive.
source negative, drain are: voltages the device, -channelP
the For negative. source positive, drain are: voltages DC
external the device, -channelN the For arrow. the of reversal in
only differ will symbol circuit the MOSFET; -channelP a instead
have we 1-1, Fig. in interchanged are Ps and NS the If
MOSFET. -channel N an as known is device
of kind particular This 1-2A. Fig. in shown is symbol circuit
corresponding The wafer. the with contact of out gate metal
the keep to needed insulation the provides film oxide thin
The wafer. the touching, not but to, close placed film metal
small a of consists carriers, these controls electrostatically
which (G), electrode gate The regions. two these
between "channel" the through flow carriers current drain,
and source the between applied is voltage external an When
wafer. the into processed are that -regionsN small of consist
electrodes (D) drain and (S) source the substrate), (the
structure. MOSFET Basic 1-1. Fig.
(SUB)
SUBTRATE
(D) DRAIN (S) SOURCE
r- OXIDE
ELECTRODE METAL
-CHANNELN
(G) GATE
 and a negative signal voltage applied to the gate narrows the
channel and reduces the drain current. In the enhancement
mode, a positive gate bias is employed, and a positive signal
voltage widens the channel and increases the drain current. In
the depletion-enhancement mode, zero gate bias is employed,
and a positive signal voltage increases drain current
(enhancement), whereas a negative signal voltage decreases
drain current (depletion). These polarities apply to N -channel
MOSFETS, and the opposite polarities apply
to p -channel
MOSFETS.

ADVANTAGES AND DISADVANTAGES

In many applications, the MOSFET offers advantages over
the conventional FET. Chief among these advantages is very
high input resistance, since the MOSFET gate is insulated from
the semiconductor, the only gate current is the exceedingly
tiny dielectric leakage-between 10 pA and 50 nA, (10
pA = 10-"A, 50 nA = 5 x 10-8A), depending upon make and
model. In some devices, this resistance may be more than 100
million megohms. Very -high -resistance MOSFETS thus offer
virtually no load.
Other advantages are: (1) lower noise (2 to 6 dB typical),
(2) reduced cross -modulation effects, (3) low feedback
capacitance (0.02 to 0.17 pF typical), (4) high maximum
operating frequency (up to 500 MHz, depending upon make and
model), and (5) high transconductance (up to 15,000
micromhos typical).
The only pronounced disadvantage of the MOSFET is the
delicateness of its gate insulation. The thin silicon -dioxide film
may easily be punctured beyond repair by electrostatic
charges or induced voltages when handling the device, or by
transients or overvoltage when using it. Extreme care is
required in the handling, installation, and operation of

SUB SUB

S S
(A) SINGLE -GATE (B) DUAL -GATE

Fig. 1-2. MOSFET symbols.

13
 14
MOSFET -protected gate the of capacitance input the and
current leakage gate the increase do diodes integrated The
insulation. gate the protecting and gate the around
path short-circuit a providing heavily, relatively conduct and
breakdown zener undergo diodes -biased reverse the level, safe
prescribed a above rises voltage gate the when fashion, classic
In voltage. gate and model and make MOSFET upon depending
= nA (1 nA 50 to 1 of order the of is current leakage
10-9A),
diode The reversed.) are conditions bias the reverses, polarity
the when biased; forward is other the and biased reverse
is leg each in diode one voltage, gate of polarity given a (For
performance. MOSFET with interfere not does and resistance
high extremely offers it i.e., nonconducting; essentially
is pair each in diode -connected reverse the voltage),
signal peak normal and bias gate normal including ( voltages
low At source. and substrate the to 1) gate for D4 and D3
and 2, gate for D2 and (D, diodes zener -connectedback
- -to
back integrated of pair a through connected
internally is gate each arrangement, this In MOSFET.
-protected gate the of symbol circuit the shows 1-3 Figure
MOSFET -PROTECTEDGATE
tubes. some of capacitance input the than smaller much
very is and transconductance, same the having tubes many of
capacitance input the than higher slightly only is it as user, or
designer the to impediment great no is pF) 6.5 to 3 (typically
capacitance this However, disadvantage. a wafer-as
semiconductor underlying and insulation, oxide gate,
metal the by formed capacitor equivalent the to mosFET-due
the of capacitance input the cite appraisers Some
below. described is MOSFET foolproof nearly This transistor.
any to given care ordinary the with handled be can type this
and model), -gate dual a (as available commercially is MOSFET
-protected gate special a However, MOSFETS. conventional
MOSFET. -protected Gate 1-3. Fig. G1
62
somewhat, but in many applications the protection against
MOSFET destruction is well worth this slight disadvantage.
MOSFET USED IN THIS BOOK
In the experimenter's interest, only gate -protected
MOSFETS are used in the circuits given in this book. Moreover,
for simplicity and because of its wide range of usefulness, a
single type of mosFET-the RCA 3N187-is employed
throughout. ( If the reader desires, the RCA 40673
consumer -type MOSFET may be substituted for the 3N187.)
The exact circuit symbol of the 3N187 is shown in Fig. 1-4A.
This sketch shows the internal elements, as well as the
lead arrangement (G, = gate 1, G2 = gate 2, S = source,
D = drain). Figure 1-4B shows a simplified symbol for the
3N187. In this latter symbol, which is used in all the circuits in
this book, the internal diodes have been omitted for simplicity
(just remember that you are using a diode -protected MOSFET,
and you do not need to make any connections to these diodes).
Figure 1-4C shows the lead arrangement in the 3N187 MOSFET.
The 3N187 is an N -channel depletion -type MOSFET which
may be operated as high as 300 MHz. It is enclosed in a TO -72
metal can; it thus isonly approximately 0.21 in. high and 0.195
in. in diameter. Its four stiff leads may be plugged into a
socket (e.g., Sylvania ECG -418) or soldered or welded directly
into a circuit.
The following pertinent electrical characteristics of the
3N187 are taken directly from the manufacturer's literature.

02

01

S (C) BASE
(B) SIMPLIFIED CONNECTIONS
SYMBOL

(A) EXACT SYMBOL (BOTTOM VIEW)

Fig. 1-4. 3N187 symbols.

15
 16
not Do abuse. similar and hammering, dropping,
handling, rough Avoid mechanically. abused be not
should it Nevertheless, gingerly. handled be not need
and mechanically rugged reasonably is 3N187 the as
such MOSFET -protected gate a transistors, other Like 6.
case. the of top the
on down, straight and gently but firmly, push home,
MOSFET the drive To 1-4C). Fig. (see hole correct the in
is lead each that insure and socket, a into MOSFET the
inserting before straight are leads pigtail the sure Be 5.
last. MOSFET the insert and
carefully, wiring all check project, a completing After 4.
studs.
terminal of use screws, mounting of use clips, of use
heatsink), suitable a use ( circuit into directly welding
or soldering socket, of use include These MOSFET.
the for suitable are mounting transistor of methods All 3.
device. transistorized
other any to apply would that precautions
and techniques same the Use circuit. printed box,
metal chassis, open board, perforated construction:
of method favorite his use to free is reader The 2.
text.
the in instructed as exactly needed) is this where (
circuit a Adjust diagrams. circuit the in specified
voltages and components of values exact the Employ 1.
offered: are hints following the use, its from
results best and MOSFET the of protection maximum For
PRECAUTIONS AND HINTS
MHz 200 =
= G2S
4V, V
mA, 10 = ID
= Vos) (
280052 resistance Output
(r°,,)
typ -2V (
Vp02) voltage pinchoff -source-to -2Gate
typ -2V Vp01) ( voltage pinchoff -source-to -l Gate
max pF 0.03 (Cr,.,) capacitance transfer Reverse
typ pF 6 (C,,,) capacitance Input
max nA 50 Icss) ( current leakage Gate
typ µmho 12,000 min; µmho 7000 (Gib) transconductance Forward
MHz 200 at max dB 4.5 (NF) figure Noise
MHz 200 at typ dB 18 (Go,) gain Power
mW 330 25°C) ( dissipation Device
mA 50 (
current drain Maximum
DC VDs of 30% to -6% VG2s) ( volts -source-to -2Gate
AC peak ±6V DC, -6V to +3V Vms) ( volts -source-to -l Gate
max +20V to -0.2V (V0s) volts -source-to Drain
 stress the pigtail leads. Use care when removing a
MOSFET from its socket.
7. The metal case of the 3N187 is "hot" ; that is, the case
is internally connected to the substrate and source.
Therefore, do not allow the case to come into contact
with leads, chassis, or other components.
8. In all MOSFET circuits, use the shortest
and most direct
leads that are practicable. This will minimize stray
pickup, undesired coupling, and undesired feedback.
9. When using only one gate of a dual -gate MOSFET, do not
allow the other gate to float, especially if a lead is
connected to it. Either ground the unused gate,
connect it to the source, or connect a 10001/
resistor
between this gate and ground. A floating gate is highly
susceptible to stray pickup and body capacitance.
10. In all RF circuits and high -gain AF
circuits, shield all
susceptible parts of the circuit just as you would in a
tube circuit. When long leads are unavoidable, lead
dress is important.
11. Do not subject the mosFET to excessive currents
or
voltages. (Refer to the electrical characteristics of the
3N187.)
12. Never allow the combined gate voltage (Dc
peak AC signal voltage) . to exceed the maximumbias plus
gate -voltage rating of the MOSFET.
13. Avoid exposing the MOSFET to strong magnetic fields.
14. Protect the MOSFET from excessive heat.
15. In some of the circuit diagrams, a dashed line
runs to
the ground symbol. This means that the connection to
chassis or to earth, as the case may be, is optional and
t. depends upon how the circuit will be used by the
reader. When, instead, a solid line runs to the ground
symbol, the connection must be made.

17
 18
developed bias negative -1 gate (1) of combination a of means
by region linear its in operate to biased is MOSFET The
circuit. -transistor bipolar -emittercommon the
and circuit tube -cathode grounded the to equivalent is circuit
This circuit. -sourcecommon the in MOSFET 3N187 a employing
amplifier -stage single a of circuit the shows 2-1 Figure
AMPLIFIER -COUPLEDRC -STAGE SINGLE
1. Chapter
in given precautions and hints the carefully read circuit,
any of operation and wiring the undertaking Before
instead. used be may supply power filtered well a however,
supply; DC for shown are batteries simplicity, For
reader. experienced the to apparent readily be will circuits
tube equivalent in used those to components the of similarity
The 25V. of rating -voltage working DC a have capacitors
electrolytic and 1/2W, are Resistors ohms. in resistances and
picofarads in are capacitances text, the in or diagram circuit
the on indicated otherwise unless circuits, the of each In
device. the with acquainted getting
of means a as applications audio these choose will applications
MOSFET to newcomers Some latter. the for impedance
input high provide to circuit integrated conventional a of ahead
operated be may MOSFET a how shows circuit another each; of
features best the obtain to transistor bipolar a with MOSFET a
using of way common a shows circuit One inverters. phase and
amplifiers, tuned amplifiers, -stage 2 amplifiers, -stage single
including circuits, -frequency audio 22 presents chapter This
Amplifiers AF
2
Chapter
 C3
IF
0.1µF
Parts
0.5M
R2 470K
C
R3 1.5M
R4 270
r01µF R5 1800
C1 0.1 I.L.F R5 Z 1800
C2 50 i.LF
C3 0.1 p..F
B 6V, 1.6 mA AF OUTPUT
S SPST (1V RMS MAX)
0 5M O 3N187 0
AF INPUT
(0.1V RMS MAX Ri <
AT G1)
GAIN R3
O
1.5M
ON-OFF
R 470K R4 270
50µF 6V
B
1.6 mA
C2T T-

/ / CHASSIS

Fig. 2-1. Single -stage RC -coupled amplifier.

 20
position. this in potentiometer -resistancehigh a of use the
enables MOSFET the of resistance gate high The potentiometer.
this of resistance the increasing by pickup, stray
of chance some at obtained, be may resistance input Higher
R potentiometer -control gain the of resistance full the 1/2M,
approximately is amplifier the of resistance input The
amplifier.
the of operation linear for adjustment some need may
divider this in R3 resistor setup, individual an In B). (battery
supply DC the from operated R2-R3, divider voltage the
by developed is bias positive the R4; resistor source through
current drain of flow the by developed is bias negative The 2.
gate to applied voltage positive a and 1 gate to applied voltage
negative a by region linear its into biased is amplifier The
etc.
preamplifiers, and amplifiers oscilloscope games, electronic
devices, control other and relays electronic for boosters
signal amplifiers, voltmeter AC preamplifiers, desired:
is gain -stage single high which in applications numerous are
There section. preceding the in described amplifier similar
the by afforded gain voltage the times four almost provides 2-2
Fig. in shown amplifier -coupledRC -stage single the constants,
circuit different and voltage DC higher a with Operating
AMPLIFIER -STAGE SINGLE -GAINHIGH
.
RMS) 3V
equals clipping peak before voltage -signal output maximum
corresponding 1; gate at RMS 0.2V equals voltage -signalinput
maximum ( 15 to increases gain voltage -circuit open
,
the ) mA (2.6 12V to increased is supply DC the If kHz. 25 to
Hz 50 from response Hz 1000 its of dB ±2 within flat is circuit
the
.
of Response RMS. 1V is correspondingmaximumoutput The
1) R potentiometer of settings appropriate by maximum this
to reduced are signals amplitude (higher 1 gate at RMS 0.1V
is clipping -peak output before voltage -signalinput maximum
The 10. is stage single the of gain voltage -circuitOpen mA.
1.6 approximately is B supply 6V the from drain Current
here. potentiometer -resistancehigh
a of use the enables MOSFET the of resistance gate high
The RI. potentiometer -controlgain the of resistance the '2M,
approximately is amplifier the of resistance input The
operation. linear for 3N187 it
an with adjusted be to need may R3 resistance divider, this
In R2-R3. divider voltage by developed bias positive -2 gate
(2) and R4, resistor source through current drain of flow the by
 C3

3N187 0.1If µF
Parts
R1 0.5M
R2 470K
R3 3.3M
R4 3.3K
R5 15K
CI 0.1 /IF 15K
R5
C2 50µF
03 0.1µF
B 12V, 0.5 mA AF OUTPUT
S SPST (1.8V RMS MAX)
O 3N187 0
AF INPUT 5M
(50 mV RMS MAX
AT G1) GAIN R3
O
3.3M
S ON-OFF
R2 470K R4 3.3K
C2 50µF
B--- 12V
0.5 mA

I
/-1-7 CHASSIS

Fig. 2-2. High -gain single -stage amplifier.

 22
1
an employing by 2-4 Fig. in shown amplifier -stage single the
in obtained are operation amplifier improving generally and
distortion reducing in feedback negative of benefits The
AMPLIFIER DEGENERATIVE
circuit. the from omitted be not
should coupler This C4. capacitor and R, resistor of consisting
filter decoupling the by enhanced is operation Stable
C5. and C3, C1, of capacitance
the changing suitably by altered be may response frequency
The kHz. 20 than higher and Hz 100 than lower frequencies
at down dB -2 approximately is response The kHz.
20 to Hz 100 from flat reasonably is circuit the of Response
RMS. 1.8V is voltage signal
output maximum corresponding The RMS. mV 1.5 is clipping
peak output before voltage signal input maximum The mA.
1 approximately is B supply 12V the from drain Current
HI. for resistance
high a of use permits Q, MOSFET the of resistance gate high The
pickup. stray of risk some at desired, if RI, for used be may
resistance higher A R1. resistor -ground -to gate by determined
1M, approximately is amplifier the of resistance input The
amplifier. the of linearity best for adjustment some require
may R9 and R3 resistors -dividervoltage MOSFETS, individual
With Rg. R8- divider voltage by developed voltage the receives
2 gate and current, drain of flow the by R10 resistor
source
across developed drop voltage the receives Q2 MOSFET of 1
gate stage, second the In R2-R3. divider voltage by developed
voltage the receives 2 gate and current, drain of flow the by R4
resistor source across developed drop voltage the receives Q,
MOSFET of 1 gate stage, first the In voltage. positive a MOSFET
each of 2 gate and voltage, negative a receiving MOSFET
each of 1 gate with biased, individually are stages The
1200. is amplifier this
of gain voltage -circuitopen The cascade. in MOSFETS 3N187
two employing amplifier an of circuit the shows 2-3 Figure
AMPLIFIER -GAINHIGH -STAGETWO
Hz. 20 at dB -5 is and kHz, 50 to Hz
100 from response Hz 1000 its of dB ±2 within flat is circuit the
of Response RMS. 1.8V is output maximum corresponding The
.
,) R potentiometer of settings appropriate by maximum this
to reduced are signals amplitude higher ( 1 gate at RMS 0.05V
is clipping peak output before voltage -signalinput maximum
The 36. is stage single the of gain voltage -circuitOpen mA.
0.5 approximately is B supply 12V the from drain Current
Parts R11 15K
R1 1M C1 0.1 µF
470K R6
R2 C2 50µF
R3 3.3M C3 0.1 p.F 1K
R4 3.3K C4 10µF 10µF
R5 15K C5 50µF R5 15K R11 15K
R8 1K C8 0.1µF
R7 0.5M B 12V, 1 mA
3N187 C5
R8 470K S SPST 3N187
R9 3.3M Qi 3N187 Qt 02
Rio 3.3K 42 3N187 0.1 µF 0 1µF
C1

-I(
0 1 µF 0.5M
R7
GAIN 0
AF OUTPUT
0
AF INPUT (1 8V RMS MAX)
(1.5 mV RMS 1M
Ri
MAX) 3

3.3M

+ 3.3K "f"
S 0\ON-OFF
R, 470K R4 3.3K Rio
R8
C,2^ 50 µF C5 50 µF if 12V
B-1 mA
/ CHASSIS

Fig. 2-3. Two -stage high -gain amplifier.

1\3 Parts
R1 0.5M C1 0.1 µF
R2 470K C2 0.1 /IF
R3 3.3M B 12V, 2.2 mA 0.1µF
R4 330 S SPST 3N187
R5 15K 0 3N187 0

01,F R5 15K

0 5M AF OUTPUT
(22V RMS MAX)
GAIN
R3 0
AF INPUT
(0 6V RMS MAX AT G1) 3.3M
ON - OFF

/R2 470K R4 330

12V
B
2 2 mA

I
/ / CHASSIS

Fig. 2-4. Degenerative amplifier.

unbypassed source resistor R4. The price for the improved
operation is, of course, loss of gain. Thus, the voltage gain of
this circuit, compared with that of its counterpart shown in
Fig. 2-1, is approximately 3.7.
The amplifier is biased into its linear region by a negative
voltage applied to gate 1 of MOSFET Q, and a positive voltage
applied to gate 2. The negative bias is developed as the voltage
drop across source resistor R4 ( produced by the flow of drain
current through this resistor). The positive voltage is
developed by voltage divider R2-R3. With an individual
MOSFET, resistor R3 in this divider may need some adjustment
for best linearity of amplifier operation.
The input resistance of the amplifier is approximately
1/2M, determined principally by the resistance of the gain-
control potentiometer RI. The high gate resistance of the
MOSFET permits use of this high resistance at RI. If desired, a
higher R, resistance may be employed, at some risk of stray
pickup.
Current drain from the 12V supply is approximately 2.2
mA. The maximum input -signal voltage before output peak
clipping is 0.6V RMS at gate 1 (higher amplitude signals are
reduced to this maximum by appropriate settings of
potentiometer R,). The corresponding maximum output signal
voltage is 2.2V RMS.

SOURCE FOLLOWER
Figure 2-5 shows the circuit of a simple source follower.
This circuit is equivalent to the vacuum -tube cathode follower
and the bipolar -transistor emitter follower. Like the latter two
circuits, the source follower is a degenerative type employing
negative feedback to cancel stage -introduced distortion. The
circuit is characterized by high input impedance and low
output impedance. As such, it has many well known
applications in electronics, especially that of impedance
transformer with power gain. The source follower, like the
cathode follower and emitter follower, is noted also for its wide
frequency response and low distortion.
In this circuit, gate 1 and gate 2 are connected together
and receive negative DC bias from the voltage drop produced
by the flow of drain current through source resistor R2. The
high bypass capacitance C2 places the drain effectively at
ground potential. The input resistance of the stage is
approximately 1M and is largely determined by the full
resistance of gain -control potentiometer R,. For higher input
resistance, when this is desired, the resistance of R, may be
increased, at some risk of stray pickup. The approximate

25
IN)C)

Parts
R1 1M
R2 500
3N187 Ci 0.1 /IF
C2 50µF
C2 50µF
C/3 (SEE TEXT)
B 7.5V, 2 mA
S SPST
Q. 3N187

G3 (SEE TEXT)

AF INPUT
1M
(0.7V RMS MAX R
AT G1) GAIN
\ON-OFF
AF OUTPUT
(0.36V RMS MAX)
7.5V
B
I
- 2 mA
I- 1

/ / CHASSIS

Fig. 2-5. Source follower.

effective output impedance of the stage is 2771/ But this will
differ somewhat with individual MOSFETS, since trans -
conductance is a term in the impedance formula and
varies with MOSFE'M of the same type. The reader can vary R2
for a desired value of output impedance. The output
impedance is given by

R° - ( Yfsr,ross R2
+ 1) + (Eq. 2-1)

where
R, = output impedance ( ohms)
R2 = source resistor value (ohms)
r, = MOSFET output resistance ( ohms). ( See manufacturer's
literature, but figure approximately 2800f/ for the 3N187.)
Yis transconductance of the MOSFET ( mhos) (See
manufacturer's literature.)
Voltage gain of the stage is approximately 0.51. The
maximum input signal voltage before output peak clipping is
0.7V RMS at the gates of the MOSFET (higher amplitude signals
are reduced to this maximum by appropriate settings of
potentiometer R1). The corresponding maximum output signal
voltage is 0.36V RMS. You may obtain higher output voltage by
increasing resistance R2, and vice versa, but this will also affect
the value of output impedance ( see Eq. 2-1). The equation for
voltage gain of the source follower is

Y1 R2
(Eq. 2-2)
GV - 1 + Yfs R2
where Y fs and R2 have the same meanings as in Eq. 2-1.
Response of the stage is reasonably flat from 100 Hz to 100 kHz
and is approximately 2 dB down at 20 Hz. Current drain from
the 7.5V supply is approximately 2 mA.
Output capacitor C3 will be required when this source
follower drives a stage or device to which direct coupling will
be undesirable. Its capacitance will be governed by the
resistance or inductance that will be encountered in the driven
device and the extent to which the LC or RC combination
alters the frequency response of the source follower.
MOSFET-BIPOLAR AMPLIFIER WITH AGC
Figure 2-6 shows the circuit of a 2 -stage amplifier
employing a 3N187 MOSFET in the input stage and a 2N2712
silicon bipolar transistor in the output stage. The stage

27
 R2 1K B 9V,1.5 mA
co Parts 4.7M D 1N34A
R9 s
0.5M C1 0.05µF ON-OFF SPST
I\ R9 15K S1
R2 470K C2 50µF R10 560K S2 SPST
2.2M 15K +
R3 C3 0.5µF R3 9N/
B R11 15K GI 3N187
R4 15K C4 50µF 1.5 mA 2N2712
R12 2.2M 02
R5 3.3K C5 0.5µF
R6 47K C6 0.5µF
C5

0.5µF

0.05 µF AGC
S2,0
AF OUTPUT
ON
AF INPUT 0.5M (1.2V RMS MAX)
(10 mV RMS 47K
MAX AT G1) GAIN D

O CATH
C
1N34A
50µF
R 1K
Rio 560K Ri1 15K
RI 1 1

0.5 'IF
R12
177 CHASSIS inn
2.2M

Fig. 2-6. MOSFET - bipolar amplifier with AGC.

configuration is similar: common -source MOSFET and
common -emitter bipolar transistor. This arrangement affords
the high input impedance of the MOSFET and the high voltage
gain of the bipolar transistor. An added advantage is overall
automatic gain control.
In the first stage, negative gate -1 bias for the MOSFET is
provided by the voltage drop resulting from the flow of drain
current through source resistor R5, and positive gate -2 bias is
supplied by voltage divider R2 -R3 (for an individual MOSFET,
resistor R3 in this divider may require some adjustment for
linear operation of the amplifier). In the second stage, the base
bias of the 2N2712 transistor is the combination of the voltage
drop resulting from the flow of collector current through
emitter resistor R, and the output of voltage divider Rs R8.
The input impedance of the amplifier is approximately
1/2M, determined principally by the full resistance of
gain -control potentiometer R,. A higher resistance ( e.g., 1M)
may be used, if desired. The high gate resistance of the
MOSFET permits use of a high -resistance gain control in what is
essentially a transistorized amplifier.
Current drain from the 9V supply is approximately 1.5 mA.
The overall voltage gain ( into open circuit or
very -high -resistance load) is 120. The maximum input signal
voltage before output peak clipping is 10 mV RMS at gate 1 of
MOSFET Q, (higher amplitude signals are reduced to this
maximum by appropriate settings of potentiometer R1). The
corresponding maximum output signal voltage is 1.2V RMS.
These figures are obtained with AGC switch S2 open ( i.e., AGC
off). When S2 is closed, the rectifier circuit D- R10- R is cut
into the circuit, rectifies a portion of the output signal, and
sends the resulting DC through filter R12 -C6 to gate 2 of the
MOSFET Q,. The germanium diode D is poled for negative DC
output, and this negative voltage at gate 2 of Q, reduces the
gain proportionately in the input stage.

MOSFET INPUT FOR IC AMPLIFIER

While integrated circuits having MOSFET transistors
processed into them are obtainable, a great many
conventional is amplifiers with conventional bipolar transistor
input are in the hands of hobbyists and experimenters. Figure
2-7 shows one way of providing high -impedance MOSFET input
for such an integrated circuit. The ic here is an RCA 3020. This
integrated circuit is a complete audio amplifier having three
intermediate stages and a push-pull class B output stage
delivering 1/4W of AF power. The input resistance provided by
the MOSFET Q is governed largely by the resistance of

29
O R4
G2
PRI: 100 OHMS CT
/T/
)i SEC: 3.2 OHMS
3N187
6 SPKR
T
8
Ci IC
2
CA3020
r01 µ F 7
9
10 rParts
11 470K to 1M
R1

12p R2 500 C4 1
A3 5K C5 1
UNUSED R4 0.62 Cg 1 µF
R5 B 6V
R5 510K
AF INPUT 470K 510K C1 0.1 pf. IC CA3020
TO C6 C2 100µF S SPST
(0.7V RMS MAX) R1
1M C3 0.01 µF Q 3N187
1 µF ON-OFF
C4 R3 5K
R2 500 ZERO S IGNAL: 14 mA
B - 6VTMAX SIGNAL: 87 mA
1µF
01µF
03TO
/ CHASSIS

Fig. 2-7. MOSFET input for is amplifier.

gate -to -ground resistor RI and can be any value between 470K
and 1M. The higher values will make the setup more
susceptible to stray pickup. The input stage is a source
follower.
In the outboard input stage, the two gate electrodes of the
MOSFET are connected together and receive their negative bias
from the voltage drop developed across source resistor R2. The
output of the is is coupled to a 3.2f/ speaker through a
miniature, transistor -type transformer T having a 100f/,
centertapped primary winding and 3.2fl secondary.
Since the ic contains a class B stage, the direct -current
drain will be different under quiescent and driven conditions:
The zero -signal current drain from the 6V source thus is 14
mA, and the maximum -signal drain is 87 mA, approximately.
Higher audio power may be obtained by appropriately
increasing the battery voltage; however, for powers in the
vicinity of 1/2W, a heatsink must be used with the ic. For 1/4W
output with minimum distortion, the maximum input signal
voltage is 0.7V RMS. Since the gain control R3 is at the input of
the second stage of this circuit, the signal must be limited to
this maximum at the amplifier input.

DUAL -INPUT AF MIXER

One of the merits of the dual -gate MOSFET is its low
cross -modulation characteristic. This feature allows the
device to be employed effectively in converters and mixers.
Figure 2-8 shows the circuit of a dual -input audio -frequency
mixer employing a single 3N187 MOSFET.
Here, AF input 1 is applied to gate 1 of the MOSFET through
1/2M gain -control potentiometer Ri, and AF input 2 is applied to
gate 2 through 1/2M gain -control potentiometer R2. Gate 1
receives negative bias resulting from the voltage drop
developed by the current through source resistor R5 gate 2
receives positive bias produced by the output of voltage
divider R3 -R4. The common output signal is developed across
drain resistor R6 and is coupled to the output through capacitor
C5. The resistance at each signal input is approximately 0.5M,
determined largely by the resistance of potentiometer R, or
potentiometer R2. Higher input resistance may be obtained by
substituting higher resistance potentiometers, at some risk of
stray pickup.
Current drain from the 6V source is approximately 3 mA.
The open -circuit voltage gain for each half of the circuit is 10.
The maximum input signal voltage before output peak clipping
is 0.1V RMS at gate 1 or gate 2 (higher amplitude signals are
reduced to this maximum by appropriate settings of

31
 Cs

3N187 0.1 µF
0
0.1 µF Parts
O R1 0.5M C2 0.1 /IF
AF 0.5M
R2 0.5M C3 100µF
INPUT 1
GAIN R3 1500 C4 50µF
R6 1800
R4 4700 Cs 0.1 µF
R5 330 B 6V, 3 mA
R6 1800 S SPST
C1 0.1 µF Q 3N187

AF OUTPUT

C2

I( 0 5M ON -OFF
0.1 µF S k
R2
I GAIN
AF
R4 li: 50 µF L
INPUT 2 R5 I330 C4
B=.6V 3 mA
4700
R3 1500

T100

/ / CHASSIS

Fig. 2-8. Dual -input AF mixer.

gain -control potentiometers R1 and R2). The corresponding
maximum output signal voltage is 1V RMS.
Like its tube and transistor counterparts, this mixer will
operate from a combination of devices. Examples are: two
microphones, two players, one microphone and one player,
and so on.

DUAL-MOSFET PHASE INVERTER

Figure 2-9 shows the circuit of a conventional dual -device
phase inverter adapted for mosFETs. This circuit is applicable
to many experimental uses, as well as to its usual application
of driving a push-pull amplifier. In this arrangement, the AF
input signal is first amplified by MOSFET Q1, which, because of
the common -source circuit, provides a 180° phase shift at the
junction of R9 and C4. This output signal is sampled by
potentiometer R11, which returns a fraction of the signal to the
input of MOSFET Q2, which then amplifies this fraction and
shifts its phase by 180°. The output of Q2 is delivered to the
phase -2 output terminal. In this way, the two output signals are
of opposed phase, with respect to the common output terminal.
Balance -control potentiometer RI, is adjusted for equal
amplitude of the phase -1 and phase -2 output signals.
In this circuit, gate 1 of MOSFET Q, receives negative bias
resulting from the voltage drop produced by the flow of drain
current through source resistor R4, and gate 2 of this MOSFET
receives positive bias from voltage divider R2-R3. Resistor R3
in this divider may need some adjustment with an individual
MOSFET for linear operation of the top half of the circuit.
Similarly, gate 1 of MOSFET Q2 receives negative bias resulting
from the flow of drain current through source resistor R8, and
gate 2 of this MOSFET receives positive bias from voltage
divider R8-R7. Resistor R7 of this divider may need some
adjustment with an individual MOSFET for linear operation of
the bottom half of the circuit.
Current drain from the 6V source is approximately 3.5 mA.
The maximum input signal voltage before output peak clipping
is 0.1V RMS. The corresponding output signal voltage is 1V RMS.
The open -circuit voltage gain of each half of the circuit
accordingly is 10. Excellent balance may be obtained through
careful adjustment of potentiometer R,,.

PARAPHASE AMPLIFIER
When the demands for close balance are not so stringent, a
paraphase inverter may be used in place of the 2 -device phase
inverter just described. A suitable paraphase-type circuit is

33
 3N187
Qi 0.05 µF

R9 1800
500K
IC
0.1 µF R11
R3 BALANCE

AF INPUT 1.5M 10N - OFF

R 1M
(0.1V RMS MAX) S
O PHASE 1
R2 470K R4 270 C2 50 /IF --6V
B OUTPUT
_ 3.5 mA
T -0 COMMON

R8 270 C/3"-' 50 µ.F O PHASE 2

/ /CHASSIS R6 470K
R5 1M
Parts
R7
R1 1M
R2 470K 1.5M R12 470K
1.5M 02 R14 1800
R3
270 3N187
R4
R5 1M
R6 470K
R7 1.5M C3 50µF
R8 270 C4 0.05µF
Rg 1800 C5 0.05µF 0.05 µF
R10 1800 C6 0.05µF C5
R11 500K B 6V. 3.5 mA
R12 470K S SPST
0 05 µF
C1 0.1 /IF Q1 3N187
Q2 3N187 Fig. 2-9. Dual-mOsFET phase inverter.
C2 50µF
shown in Fig. 2-10. An obvious advantage of such a circuit is its
use of just one active device.
In this arrangement, a single 3N187 MOSFET supplies each
component of the output signal. Because this is a
common -source circuit, the applied signal undergoes a 180°
phase shift at the drain output ( junction of R2 and C2) and no
phase shift ( 0°) at the source output ( junction of R3 and C3). In
most instances, R2 and R3 will be identical; sometimes,
however, a particular MOSFET will need adjustment of one of
these resistances, usually R3, for identical phase -1 and phase -2
output voltages.
Current drain from the 6V source is approximately 1.5 mA.
The maximum input signal amplitude before output peak
clipping is 0.4V RMS. The corresponding maximum output
signal voltage is 0.3V RMS. The open -circuit voltage gain
therefore is 0.75, somewhat like that of a source follower. The
input resistance of the stage is largely the resistance of
gate -to -ground resistor RI. For most applications, 0.47M will
be a satisfactory value for R,; for higher input resistance,
however, up to 10M may be employed, at some risk of stray
pickup and pronounced hand -capacitance effects. If desired.
fixed resistor RI may be replaced with a potentiometer.

GATED -ON AMPLIFIER

Figure 2-11 shows one type of circuit in which an amplifier
is switched on by means of a gating signal; the amplifier
automatically switches off, as far as signal transfer is
concerned, when the gating signal passes. In this
common -source circuit, negative bias is applied to gate 2 of the
MOSFET by 1.5V source B, through the voltage divider R3-R4.
This bias is sufficient to cut the MOSFET off, with normal
negative bias supplied to gate 1 through the voltage drop
across source resistor R5. In the cutoff condition, the amplifier
can pass no signal.
When subsequently a 3V trigger or gating voltage is
applied to the trigger input terminals, enough voltage is
developed by the R2-R3 voltage divider to buck the cutoff bias
of gate 2 and allow the amplifier to operate. A signal then is
transmitted between the amplifier input and output with an
open -circuit voltage gain of 5. When the 3V potential is
removed, the MOSFET resumes its cutoff condition, and the
output disappears.
Current drain from the 12V source B2 is approximately 0.5
mA. Current drain from the cutoff -bias source B, is
approximately 2.8 mA. The maximum input signal voltage

35
0)
OUTPUT
R2 Z 3K 0.3V RMS MAX
C2
0 PHASE 1
3N187
0
0 COMMON

Ca
0 PHASE 2
0.1 µF

S \ ON-OFF Parts
AF INPUT R1 0.47-10M
R 0 47 -10M
(0.4V RMS MAX) R2 3K
R3 3K 3K
R3
G2 0.1µF
+
6V G3 0.1µF
iC4 1 00 p.. F B- 1.5 mA C4 1 00 p.F
T B 6V, 1.5 mA
S SPST
O 3N187

/ f / CHASSIS

Fig. 2-10. Paraphase amplifier.

Parts C3
Rt 1M C1 0.05µF IE
R2 270K C2 50 0.05 µF
R3 270K C3 0.05 µF
F14 270K B1 1.5V 3N187
R5 270 B2 12V, 0.5 mA 0
Rs 20K 0 3N187

R6 20K

1M
11- AF OUTPUT
GAIN R5 270 50µF (1V RMS MAX)

AF INPUT R4
C2T O

(0.2V RMS
MAX AT G1) 270K
ON-OFF
Si

270K R3 270K
1.5V

Bi.T

/CHASSIS
3-V TRIGGER INPUT
Fig. 2-11. Gated -on amplifier.
 38
instruments. measuring and equipment control automatic
in applications various has amplifier -offgated this section,
preceding the in described amplifier -ongated the Like
pickup. stray of risk increased
is there resistance, higher the at However, potentiometer.
resistance higher a using by desired, if increased, be
may this but RI; potentiometer of resistance full the by largely
determined 1M, approximately is circuit the of resistance
input The RMS. 1V is voltage signal output maximum
corresponding The Ri). potentiometer -control gain of
settings appropriate by maximum this to reduced are signals
amplitude (higher MOSFET the of 1 gate at RMS 0.2V is clipping
peak output before voltage signal input maximum The mA.
0.5 approximately is source 12V the from drain Current
operation. resumes automatically
amplifier the removed, is signal gating 2V the When vanishes.
signal output the and off pinched is MOSFET the however, here,
shown polarity the in terminals input trigger the to applied
is potential 2V a When 5. of gain voltage -circuitopen an with
output and input its between signal a transmits amplifier the
terminals, input trigger the to applied is signal no When
1. gate
to applied R4) resistor source through current drain of flow
the from resulting ( voltage negative the by biased normally
is MOSFET the absent, is bias gating this When MOSFET.
the off pinch to -R3,R2 divider voltage gating the by MOSFET,
the of 2 gate to applied is bias negative circuit, -sourcecommon
this In passes. signal gating the when concerned,
is transfer signal as far as on, switches automatically
amplifier the signal; gating a of means by off switched
is amplifier an which in section) preceding the in described
that of opposite (the circuit of type one shows 2-12 Figure
AMPLIFIER -OFFGATED
instruments. measuring and equipment control
automatic in applications various has amplifier -ongated A
pickup. stray of risk increased is there resistances,
higher the at However, potentiometer. -resistancehigher
a using by desired, if increased, be may this but
RI; potentiometer of resistance full the by largely determined
1M, approximately is circuit the of resistance input
The RMS. 1V is voltage signal output maximum corresponding
The R,). potentiometer -controlgain of settings appropriate
by maximum this to reduced are signals amplitude higher (
MOSFET the of 1 gate at RMS 0.2V is clipping output before
 0.05 AF
3N187
Parts
R1 1M
R2 270K R5 20K
R3 270K
i
R4 270
005µF R5 20K
C1 0.05µF
1M C2 50µF
R1 C3 0.05µF ON-OFF
GAIN B 12V, 0.5 MA O AF OUTPUT
S SPST (1V RMS MAX)
AF INPUT Q 3N187
(0.2V RMS MAX 0
AT G1)
R2 12V
0 5 mA
270K

50 µF
R3 270K R4 270

C2IN
0
/ ) 7 CHASSIS
2V TRIGGER INPUT

to Fig. 2-12. Gated -off amplifier.

 40
RMS. 1V is voltage
signal output maximum corresponding The Ri). potentiometer
of settings appropriate by value maximum this to reduced are
signals amplitude higher ( 1 gate at RMS 0.1V is clipping peak
output before voltage signal input maximum The passband.
the in 10 is circuit the of gain voltage -circuitOpen mA.
2 approximately is supply 6V the from drain Current amplifier.
the of response linear for adjustment some need may
R4 MOSFET, individual an With R3-R4. divider voltage from
bias -2 gate positive its and R5, resistor source through current
drain of flow the from resulting drop voltage the from bias
-1 gate negative its receives Q MOSFET circuit, basic the In
sharp. be not will rolloff filter the otherwise, Q; high
has it that insure to practicable as quality high as of be should
L Inductor µF. 0.0079 = C2 2-4, Eq. from and mH; 794
=L
Hz, 1000 of frequency cutoff a for that seen is it 2-3, Eq. From
2-4) (Eq. 104 x 12.6f, - C2
1
12.6f, -L
2-3) (Eq.
104
hertz: in f and farads, in C2 henrys, in is L which in equations,
following the to according I. frequency cutoff desired
the for chosen are C2 capacitance and L Inductance
IC. below gain full approximately has
amplifier the whereas frequencies, those at gain the canceling
fe, above frequencies all at occurs feedback negative that
result the with MOSFET, the of circuit input -1 gate and output
drain the between loop feedback negative the in section filter
high-pass -typeLC an incorporating by obtained is response
This frequency. cutoff the is fc here, response; amplifier
the shows 2-13B Figure filter. low-pass a of characteristics
the having amplifier an of circuit the shows 2-13A Figure
inductors. bulkier for elements -tuned RC compact of instances
some in substitution (4) and circuits, external from elements
tuning the of isolation (3) gain, voltage (2) impedance,
input high (1) are: filters or circuits tuned passive plain, over
amplifiers tuned of advantages The amplifiers. such of circuits
show 2-20 to 2-13 Figures others. reject and frequencies
certain pass to ways various in tuned be may Amplifiers
AMPLIFIER LOW-PASS -TUNED LC
 Parts
1M fc
R1
C2
10K I
R2
R3 470K )I
R4 1.8M ,
R5 330 L
R6 1800 0
C1 0.1 µF
C2 SEE TEXT FREQUENCY
C3 50µF R2 10K (B) RESPONSE
C4 0.1 µF
B 6V, 2 mA
L SEE TEXT 3N187
0.1 µF
Q 3N187

R6 1800

0.1 µF
AF OUTPUT
1M
(1V RMS MAX)
AF INPUT
(0.1V RMS MAX GAIN
AT G1)
O
50 µF
B
It 6V
2 mA

/77CHASSIS (A) CIRCUIT

41.
Fig. 2-13. LC -tuned low-pass amplifier.
 42
RMS. 1V is voltage signal output maximum
corresponding The R,). potentiometer of settings appropriate
by maximum this to reduced are signals amplitude
(higher RMS 0.1V is clipping peak output before voltage
signal input maximum The passband. the in 10 approximately
is circuit the of gain voltage -circuit Open mA. 2 approximately
is supply 6V the from drain Current amplifier. the of
response linear for adjustment some need may R3 resistance
MOSFET individual an With -R3. R2 divider voltage from
bias -2 gate positive its and R4, resistor source through current
drain of flow the from resulting drop voltage the from bias
-1gate negative its receives Q MOSFET circuit, basic the In
2-5. Eq. from value R6 exact the for resistance the
prune and above, as capacitance, a select to better be will it
general, In 15,924n. = R6 itLF, 0.01 = C of value selected a and
Hz 1000 of frequency cutoff a for that seen is it 2-5, Eq. From
2-6) (Eq. R6 6.28f
C3
1
6.28f,C,
2-5) (Eq. - R6
1
hertz: in fa and farads, in C3 ohms, in is R6 which in
equations, following the to according frequency cutoff desired
the for chosen are C3 capacitance and R6 Resistance
f below gain full
approximately has amplifier the whereas frequencies, those at
gain the canceling f, above frequencies all at occurs feedback
negative that result the with MOSFET, the of circuit input
-1 gate and output drain the between loop feedback negative
the in R6-C, section filter high-pass -type RC an incorporating
by obtained is response low-pass circuit, this In
frequency.
cutoff the is fc 2-14B, Fig. In 2-13B). Fig. comparison,
for see, ( amplifier -tuned LC the of that as sharp so not is
2-14B Fig. in shown response the however, ; pickup) to subject
are and tuning AF for bulky are (inductors compactness
is advantage The section. inductance-capacitance an
of instead R6-C3), ( section resistance-capacitance a of
means by tuned is amplifier this unit, preceding
the unlike but, filter; low-pass a of characteristics the
having amplifier an of circuit the shows 2-14A Figure
AMPLIFIER LOW-PASS -TUNEDRC
 Parts
R1 1M fe
R2 470K Rs
R,3 1.8M 'Ps
I \,.
R4 330
R5 470K o_

FI6 SEE TEXT 7

R7 1800
CI 0.1 i.LF
C2 50µF FREQUENCY
C3 SEE TEXT
C4 0.1 µF (B) RESPONSE
B 6V, 2 mA
S SPST
O 3N187 0.1

C1 1800
K
0.1
AF OUTPUT
(1V RMS MAX)
AF INPUT 1.8M
ON -OFF
(0.1V RMS MAX
AT G1) GAIN
O 50 p.F
2 470K R4 330 .2
6yrn
A

f_
(A) CIRCUIT
/77 CHASSIS
A
CO Fig. 2-14. RC -tuned low-pass amplifier.
 44
is advantage The section. inductance-capacitance an of
instead R3-C2), ( section resistance-capacitance a of means
by tuned is amplifier this section, preceding the in described
unit the unlike but, filter; high-pass a of characteristics
the having amplifier an of circuit the shows 2-16A Figure
AMPLIFIER HIGH-PASS -TUNEDRC
RMS. 1V is voltage signal output maximum
corresponding The RI). potentiometer of settings appropriate
by maximum this to reduced are signals amplitude (higher
1 gate at RMS 0.1V is clipping peak output before voltage
signal input maximum The passband. the in 10 approximately
is circuit the of gain voltage -circuitOpen mA. 2 approximately
is supply 6V the from drain Current amplifier. the of
response linear for adjustment some need may R3 resistance
MOSFET, individual an With R2-R3. divider voltage from
bias -2gate positive its and R4, resistor source through current
drain of flow the from resulting drop voltage the from bias
-1 gate negative its receives Q MOSFET circuit, basic the In
sharp. be not will rolloff filter the otherwise,
Q; high has it that insure to practicable as quality high as of be
should L Inductor µF. 0.032 = C2 2-8, Eq. from and 3.18H; = L
Hz, 1000 of frequency cutoff a for that seen is it 2-7, Eq. From
2-8) (Eq. 10' x 3.14f,
C2
1
3.14f,.
2-7) Eq. ( L
10'
hertz: in fc and farads, in C henrys, in is L which in equations,
following the to according 1, frequency cutoff desired
the for chosen are C2 capacitance and L Inductance
f, above gain full approximately has amplifier
the whereas frequencies, those at gain the canceling f,,
below frequencies all at occurs feedback negative that result
the with MOSFET, the of circuit input -1 gate and output drain
the between loop feedback negative the in -C2 L section filter
low-pass -type LC an incorporating by obtained is response
This frequency. cutoff the is fe here, response; amplifier
the shows 2-15B Figure filter. high-pass a of characteristics
the having amplifier an of circuit the shows 2-15A Figure
AMPLIFIER HIGH-PASS -TUNEDLC
 Parts
R1 1M fc
C3 100µF
R2 470K C4 0.1 µF
R3 1.8M C5 50µF
R4 330 B 6V, 2 mA
R5 10K L SEE TEXT
Fie, 1800 S SPST 10K 100 0
R5
C1 0.1 µF Q 3N187
C2 SEE TEXT FREQUENCY - -

3N187 (B) RESPONSE

C4
Ci 0.1µF
R6 1800

R3
AF OUTPUT
1.8M
AF INPUT 1M ELEC (1V RMS MAX)
(0.1V RMS MAX Ri S ON -OFF
4
AT G1) GAIN
-r
O
470K C5 50 µ.c B-IL
- 6V
R2 R4
2 mA

/ /CHASSIS (A) CIRCUIT

rs
Fig. 2-15. LC -tuned high-pass amplifier.
 R3 t
Parts o'VNA, 1
fc
R1 1M C2 SEE TEXT
R2 10K C3 100 µ F
H
=
-I- -- - - - -
1
o_
R3 SEE TEXT C4 0.1 /./F H
R4 470K C5 50µF = //
1.8M B 6V, 2 mA 0
R5
C3 100
R6 330 S SPST
R7 1800 0 3N187 +µF
R2 10K FREQUENCY -
C1 0.1 /IF
(B) RESPONSE
C4
3N187

0.1 kLF

Cl R 1800

0.1 1.i.F RS
AF OUTPUT
1M 1 8M
(1V RMS MAX)
AF INPUT ON -OFF
GAIN 0
(0.1V RMS MAX
AT G1) Rd 470K R6 330 50 p.F If 6V
0 B
--T 2 mA

/ / /CHASSIS

Fig. 2-16. RC -tuned high-pass amplifier.

compactness ( inductors for AF tuning are bulky and subject to
pickup) ; however, the response shown in Fig. 2-16B is not so
sharp as that of the LC -tuned amplifier (see, for comparison,
Fig. 2-15B). In Fig. 2-16B, fe is the cutoff frequency.
In this circuit, high-pass response is obtained by
incorporating an RC -type low-pass filter section ( R3-C2) in the
negative feedback loop between the drain output and gate -1
input circuit of the MOSFET, with the result that negative
feedback occurs at all frequencies below f canceling the gain
at those frequencies, whereas the amplifier has approximately
full gain above f,
Resistance R3 and capacitance C2 are chosen for the
desired cutoff frequency according to the following equations,
in which R3 is in ohms, C2 in farads, and fc in hertz:

1
(Eq. 2-9)
R3 6.28f,C2

(Eq. 2-10)
C2 - 6.28f R3

From Eq. 2-9, it is seen that for a cutoff frequency of 1000 Hz

and a selected capacitance C2 of 0.1 p,F, resistance R3 equals
159211. In general, it will be better to select a capacitance, as
above, and prune the resistance for the exact required R3
value from Eq. 2-9.
In the basic circuit, MOSFET Q receives its negative gate -1
bias from the voltage drop resulting from the flow of drain
current through source resistor R6, and its positive gate -2 bias
from voltage divider R4-R5. With an individual MOSFET,
resistance R5 may need some adjustment for linear response
of the amplifier. Current drain from the 6V supply B is
approximately 2 mA. Open -circuit voltage gain of the circuit is
approximately 10 in the passband. The maximum input signal
voltage before output peak clipping is 0.1V RMS (higher
amplitude signals are reduced to this maximum by
appropriate settings of potentiometer R1). The corresponding
maximum output signal voltage is 1V Rms.

LC -TUNED PEAK AMPLIFIER

Figure 2-17A shows the circuit of a sharply tuned peak
amplifier that tends to pass a single frequency (signal peak).
Such an amplifier is useful in null detection, signal separation,

47
 Parts
03
R1 1M C3 SEE TEXT fr
j A
R2 10K C4 100µF
H I%
R3 470K C5 0.1 iLF 000000 I
R4 1.8M B 6V, 2 mA
C3
R5 330 S SPST
1800 L SEE TEXT 0
R6
C1 0.1 /IF Q 3N187
C2 50µF
R 10K C4 1 100 µF FREQUENCY - -
C1

(B) RESPONSE
AF 3N187
a Cs

0.1 /IF
F0.1 621800
AF INPUT
(0.1V RMS MAX 1M
R4 AF OUTPUT
AT G1) `GAIN
0 1.8M (1V RMS MAX)
ON-OFF

C2 50/AF
R3 470K R5 330 1:1- 6V
B
2 mA
T T-
/ / /CHASSIS (A) CIRCUIT

Fig. 2-17. LC -tuned peak amplifier.

distortion measurements, and similar applications in which it
is desired to pass a single frequency while eliminating all
others. In this circuit, frequency peaking is obtained by in-
corporating a signal absorption circuit ( parallel -resonant
circuit L -C3) in the negative feedback loop between the drain
output and gate -1 input section of the MOSFET, with the result
that negative feedback occurs at all frequencies above and
below the resonant frequency (1, in Fig. 2-17B) which is ,

absorbed by the L-C3 combination, canceling the gain at those

frequencies, whereas the amplifier has approximately full
gain at frequency f, Figure 2-17B shows this response.
.

Inductance L and capacitance C3 are chosen for the

desired peak frequency according to the following equations,
in which L is in henrys, C in farads, and Jr in hertz:

1
L=
39.539.5 3

C3 = 39.5f2, L

From Eq. 2-12, it is seen that for a resonant ( peak) frequency

of 1000 Hz and a selected inductance of 10H, capacitance C3
equals 0.0025 µF. In general, it will be better to select an
inductance, as above, and prune the capacitance for the exact
required C3 value from Eq. 2-12.
In the basic circuit, MOSFET Q receives its negative gate -1
bias from the voltage drop resulting from the flow of drain
current through source resistor R5, and its positive gate -2 bias
from voltage divider R3 -R4. With an individual MOSFET,
resistance R4 may need some adjustment for linear response
of the amplifier. Current drain from the 6V supply is
approximately 2 mA. Open -circuit voltage gain of the circuit is
approximately 10 at the peak (fr in Fig. 2-17B). The maximum
input signal voltage before output peak clipping is 0.1V RMS
(higher amplitude signals are reduced to this maximum by
appropriate settings of potentiometer R1). The corresponding
maximum output signal voltage is 1V RMS.
RC -TUNED PEAK AMPLIFIER
Figure 2-18A shows the circuit of a sharply tuned
peak amplifier having characteristics similar to the
one just described: but, unlike that unit, this amplifier is
tuned by means of a resistance-capacitance section

49
CJ1 Parts
0 fr
1M 02 A
Ri
R2 10K 03 7
* 0_
133 C4
R4
. C5 10µF 0
R5 C6 0.1 µF
R6 470K C7 50µF
R7 1.8M B 6V, 2 mA
R3 R5
Re 330 S SPST FREQUENCY -
R3 1800 0 3N187
(B) RESPONSE
C1 0.1 ALF SEE TEXT C5 10µF
3N187 C6
R2 10K
0.1 ;IF
1800

AF OUTPUT
1.8M (1V RMS MAX)
AF INPUT M ON-OFF
(0.1V RMS MAX Fit S
AT G1) GAIN
I-1-
R6 470K 138 330 C7 50 /IF
0 -+ 6V
B
I
-2 mA
I
T
(A) CIRCUIT
-/77 CHASSIS

Fig. 2-18. RC -tuned peak amplifier.

C2-C3-C4-R3-R4-R5, instead of an inductance-
capacitance section. The advantage is compactness ( AF
inductors are bulky and are subject to pickup) . The response
of the amplifier is shown in Fig. 2-18B, where 1, is the peak
frequency.
In this circuit, peaking is obtained by incorporating a null
circuit in the negative feedback loop between the drain output
and gate -1 input section of the MOSFET, with the result that
negative feedback occurs at all frequencies except the null
frequency of the RC network (fr in Fig. 2-18B), which is
removed by the RC network, canceling the gain at those
frequencies, whereas the amplifier has full gain at frequency
fr Figure 2-18B shows this response.
The null circuit, which tunes the amplifier, is a parallel -T
network ( C2-C3-C4-R3- R4- R 5) . In this network,
C2 = C3 = 0.5C4, and R3 = R5 = 2R4. When these relationships
are preserved, the null frequency of the network, and
therefore the peak frequency of the amplifier, may be
determined by the equation

Jr (Eq. 2-13)
6.28R1 3C2

where J. is in hertz, R3 in ohms, and C2 in farads.

From Eq. 2-13, it is seen that for a parallel -T circuit in
which C2 and C3 are 0.1 /IF, C4 = 2C3 = 0.2 I.LF, R3 and R5 are
each 159211, and R4 = 0.5R3 = 79652, and the null frequency is
1000 Hz (the peak frequency J. of the amplifier). In general, it
is best to select the three capacitances (C2 = C3 = 0.5C4) and
then to adjust the resistances to exact values , R, = R5 =2R4) as
required. The following equations-in which R is in ohms, C in
farads, and 1, in hertz-will help:
1
R3 = R5 - (Eq. 2-14)
6.28f ,C2

R4 = 0.5R3 (from Eq. 2-14) (Eq. 2-15)

Resistances and capacitances must have exact values.
The sharpness of the selectivity curve in Fig. 2-18B will depend
upon the closeness with which these components meet
specified values. The circuit may be made continuously tuna-
ble by using a 3 -gang potentiometer for R,- R4- R5 and
switching the capacitors in groups of three to change Ire-
quency ranges. In this way, the amplifier can be given tuning

51
 52
2-18) (Eq. 6.28\1-07 -
Jr
hertz: in
Jr and henrys, in L farads, in is C5 which in equation, following
the use capacitor, and inductor available any of frequency the
determine To µF. 0.0126 be will 2-17) Eq. (from C5 capacitance
Hz, 1000 of frequency slot a desire and inductor 2H available
an with start we if example, For L. of terms in determined
C5 capacitance and chosen be must thus L that means This
value. fixed a have will inductor the instances, most In
2-17) (Eq. L 39.5f, = C5
1
2-16) (Eq. ,C5 39.5f =L
1
hertz: in
f,. and farads, in C henrys, in is L which in equations, following
the to according 2-19B) Fig. in (1, frequency slot desired
the for chosen are C5 capacitance and L Inductance
amplifier. MOSFET the of stages
two the between L-05 circuit (wavetrap) -resonant parallel
a incorporating by accomplished is removal signal circuit,
this In others. all passing while frequency single a remove to
desired is it where uses similar and measurement, distortion
removal, signal in applications has amplifier an Such
response. frequency amplifier the in slot or notch a produce
to i.e., frequency, single a suppress to tends that amplifier
bandstop tuned sharply a of circuit the shows 2-19A Figure
AMPLIFIER NOTCH -TUNEDLC
RMS. 1V is voltage
signal output maximum corresponding The R,). potentiometer
of settings appropriate by maximum this to reduced
are signals amplitude (higher RMS 0.1V is clipping peak output
before voltage signal input maximum The 2-18B). Fig. in jr (
peak the at 10 approximately is gain voltage -circuit Open mA.
2 approximately is supply 6V the from drain Current amplifier.
the of response linear for adjustment some need may R,
resistance MOSFET, individual an With R6-R,. divider voltage
from bias -2gate positive its and R8, resistor source through
current drain of flow the from resulting drop voltage the from
bias -1 gate negative its receives Q MOSFET circuit, this In
spectrum. -frequency audio
the cover to Hz, 2000-20,000 and 200-2000, 20-200, of ranges
 Parts
81 1M 8,9 330 C7 0.1 µF
R2 470K R10 1800 B 6V,4 mA 1-
R3 1 8M GI 0.1 /IF S SPST a
I- /
R4 330 02 50 µF S.B 0.1 µF
I /
R5 1800 C3 10µF L SEE TEXT 0 /
R6 470K C4 1µF 01 3N187
R7 470K C6 SEE Q2 3N187 fr y
R8 1,8M TEXT FREQUENCY - - -
C6 50µF
(B) RESPONSE

3N187

0.1 µF

C1
FHH-
0 1800
R5 1800
0 1 µF
R 470K
R3 AF OUTPUT
0 (1V RMS MAX)
1.8M
AF INPUT
(01 RMS R1 C3,10 'IF 0
GAIN ON -
MAX AT G1)
OFF
C2 C8- 50 ALF
R2;IF 470K R4 330 +50I 6V
B= 4 mA

/ /CHASSIS (A) CIRCUIT

01
Fig. 2-19. LC -tuned notch amplifier.
 54
equations-in following The required. as 2R8), = R, = (R6
resistance of values exact the up make and 0.5C6) = C5 = C4 (
capacitances three the select to best is it general,
In kHz. 31.85 is frequency null the 5000, = R8 and 10001/, each
are R, and R6 µF, 0.01 = C6 ktF, 0.005 each are C5 and C4 which
in circuit -T parallel a for that seen is it 2-19, Eq. From
2-19) (Eq. 6.28R6C4 Jr
1
:
hertz) in f and ohms, in R6 farads, in is
C4 which (in equation following the of aid the with determined
be may 2-20B, Fig. in frequency notch the therefore
and network, the of frequency null the preserved, are
relationships these When . 2R8. = R, = R, and 0.5C6, = C5 = C4
network, this In R8) C4-C,-C6-R6-R2- ( network
-T parallel a is amplifier, the tunes which circuit, null The
frequency). slot called also ( frequency
notch the is f where 2-20B, Fig. by shown is amplifier
the of response The resistors. the varying by tuning continuous
to adaptability and pickup, from freedom compactness,
is advantage The section. inductance-capacitance
an of instead , 8) R R7--- C4-05-C6-R6- ( network null
resistance-capacitance a of means by tuned is amplifier this
described, just unit the unlike but, described; just amplifier
the of those to similar characteristics having amplifier
notch tuned sharply a of circuit the shows 2-20A Figure
AMPLIFIER NOTCH -TUNEDRC
RMS. 1V is voltage signal output maximum corresponding
The R1). potentiometer of settings appropriate by maximum
this to reduced are signals amplitude (higher RMS mV 10
is clipping peak output before voltage signal input maximum
The L. inductor in losses upon depending value exact
its passband, the in 100 to 90 approximately is gain voltage
-circuitOpen mA. 4 approximately is supply 6V the from
drain Current amplifier. the of operation linear for adjustment
some need may R8 and R3 resistors mosFETs, individual
8.
With R R2- divider voltage from bias -2gate positive its and
R6, resistor source across drop voltage the from bias -1 gate
negative its receives Q2 MOSFET Similarly, R.,. R7- divider
voltage from bias -2gate positive its and R4, resistor source
through current drain the from resulting drop voltage the from
bias -1 gate negative its receives Q, MOSFET circuit, this In
high. be must L inductor of Q the 2-19B), Fig. (
curve response the of sharpness maximum For Hz. 1126 =
AF, 0.002 of C5 capacitance and 10H of inductance an for Thus.
 Parts
R1 1M R13 1800 S SPST
R2 470K CI 0.1 ;IF Q1 3N187
R3 1.8M C2 50µF 02 3N187
330 C3 10µF . /
SEE TEXT
R5 1800 C4
R6 C5
* fr1V
R7 C6 R6 R7
R8 C7 50µF FREQUENCY -
R9 10M C8 0.1 LLF (B) RESPONSE
Rip 470K Cg 10µF C3 C4 C5 C8
R11 1.8M B 6V, 4 mA
R12 330 3N187 +1E-1
Q1
10µF 0.1 ALF
R8

R5 1800 1800
0.1JCi
ALF
R9
0 R C9 AF OUTPUT
AF INPUT (0 9V RMS
1 8M +1( MAX)
(10 mV RMS R1 10 ALF/ )
MAX AT G1) GAIN
ON-OFF
0
C2 -± 21_F 6V
R2 470K 134 330 50µF
4 mA

T I
/ / /CHASSIS (A) CIRCUIT

(Ti
Fig. 2-20. RC -tuned notch amplifier.
 56
pickup. stray of risk some
at employed, be may resistance higher A R,. potentiometer
control volume of resistance full the by principally
determined 1M, approximately is circuit the of resistance
input The headphones. magnetic -resistance high for amplifier
inexpensive simple, a of circuit the shows 2-21 Figure
used. is earpiece magnetic a or headphones magnetic
when important especially is This source. signal the to load
no virtually present will instrumentation, or communications
for employed whether headphones, the that insures
impedance high The miniaturization. extreme and impedance
input high very affords MOSFET The MOSFET. a of use
the through improved be can also operation its device, simple
relatively a is headphones for amplifier an Although
AMPLIFIER HEADPHONE
RMS. 0.9V to 0.8V is voltage output maximum corresponding
.
The R,) potentiometer of settings appropriate by maximum
this to reduced are signals amplitude higher ( RMS mV 10 is
clipping peak output before voltage signal input maximum The
network. -T parallel individual an by introduced attenuation of
amount the and mosFETs individual upon depending passband,
the in 90 to 80 approximately is gain voltage -circuitOpen
mA. 4 approximately is supply 6V the from drain Current
amplifier. the of operation linear for adjustment some need
.
may R and R3 resistors MOSFETS, individual With R,0-R
divider voltage from bias -2gate positive its and R12, resistor
source across drop voltage the from bias -1 gate negative
its receives Q2 MOSFET Similarly, -R3.R2 divider voltage
from bias -2gate positive its and R4, resistor source through
current drain of flow the from resulting drop voltage the from
bias -1 gate negative its receives Q, MOSFET circuit, this In
Hz. 2000-20,000
and 200-2000, 20-200, of example, for ranges, tuning
given be can amplifier the way, this In bands. frequency
change to three of groups in capacitors the switching
and R7-R6 R6- for potentiometer -gang3 a using by tunable
continuously made be may circuit The values. specified
meet components these which with closeness the upon
depend will 2-20B Fig. in curve selectivity the of sharpness The
values. exact have must capacitances and Resistances
2-21)
(Eq. 2-20) Eq. from ( 0.5R6 = R8
6.281rC4
2-20) Eq. ( = R, = R6
1
help: hertz-will in f, and farads, in C ohms, in is R which
 7-1K"="- T":717re'77:77, _
-
.

Parts
3N187 R1 1M
R2 1600 HIGH -RESISTANCE
R3 8200 MAGNETIC
R4 270 HEADPHONES
CI 0.1 p.F
C2 50µF
B 9V, 2.6 mA
S SPST
Q 3N187

R3

AF INPUT 1M 8200
(0 1V RMS
MAX AT Gl) VOLUME ON-OFF

C2 50µF
R 1600 R4 270 9V
2 6 mA

T-

/ /CHASSIS Fig. 2-21. Headphone amplifier.

01
 58
section. that to refer
therefore, characteristics, electrical For section. preceding
the in described one simpler the as same the is circuit this
headphones, the of tuning the than other respects all In
L 39.5f,
2-22) (Eq. - CI
1.000.000
hertz:
in frequency resonant the Iris and microfarads, in capacitance
required the is C, henrys, in inductance headphone
the is L which in equation, following the of aid the with
calculated capacitance required the and bridge AC suitable
a with measured be may headphones the of L inductance
the Or headphones. the across temporarily connected TVM)
(
or VTVM voltmeter electronic AC an of upswing maximum by
indicated as response, peak for headphones) the with parallel
(
in connected decade capacitor a adjusting and amplifier
the of terminals input the into frequency desired the of signal
a feeding by practically accomplished be may tuning The
headphones.
of means by bridge AC an of balancing the in also advantageous
is headphones the of resonating Such selectivity. signal
additional providing as well as reception, code improve will
this and Hz, 1000 or 400 as such frequency recognizable readily
a to tuned be may headphones the Thus, 2-22. Fig. in C3 as
such capacitance suitable a with headphones the of inductance
the tuning by simply provided one satisfactory more a
or intensified be may peak This diaphragm. the of dimensions
to chiefly due peak resonant a have usually Headphones
AMPLIFIER HEADPHONE -RESPONSE PEAKED
mA. 2.6 approximately is supply 9V the from
drain Current headphones. the in signal audible barely just
a gives MOSFET 3N187 the of 1 gate at signal input RMS mV 0.5
A 10. is gain voltage the conditions, these Under RMS. 1V is load
headphone the across voltage output maximum corresponding
The Rd. potentiometer of settings appropriate by maximum
this to reduced are signals amplitude higher ( RMS 0.1V
is clipping peak output before voltage signal input maximum
the used, is headphones magnetic 20000 of pair a When
circuit. the in distortion low for adjustment some need may R3
resistance MOSFET, individual an With -1i3. R2 divider _voltage
from bias -2 gate positive its and R4, resistor source through
current drain of flow the from resulting drop voltage the from
bias -1 gate negative its receives MOSFET the circuit, this In
 Parts
R1 1M C3 SEE TEXT
R2 1600 B 9V, 2.6 mA
R3 8200 S SPST
R4 270 O 3N187
C1 0.1 auF HIGH -RESISTANCE 3N187
C2 50µF MAGNETIC HEADPHONES a HIGH -RESISTANCE
MAGNETIC
4- HEADPHONES
I(
01ILF

R3

AF INPUT 1M 8200
(0.1V RMS MAX R1
AT G1) VOLUME ON-OFF
s
0

C2T 50 µF
R2 1600 270
9V
B __
= 2.6 mA

/7-7 CHASSIS

Fig. 2-22. Peaked -response headphone amplifier.

 60
transconductance the with accordance in increase to current
drain MOSFET the causes This MOSFET. 3N187 the of 1 gate to
applied is resistor this across developed is accordingly which
drop voltage The R,. resistor input through flows interest
of current the arrangement this In currents. direct amplifying
for circuit single-MOSFET simple a shows 3-1 Figure
AMPLIFIER DC
1. Chapter
in given precautions and hints the carefully read circuit,
any of operation and wiring the undertaking Before
battery. a of instead used
be may supply power -operatedline filtered well a however,
supply; DC for shown are batteries simplicity, For
required. not are transformers -typetransistor tapped
as such components special Thus, counterparts. -tubevacuum
their to similar closely be to seen are circuits the of most
MOSFET, the of characteristics electrical the of Because volts.
working 25 are capacitors electrolytic and 1/2W, are Resistors
microhenrys. in inductances and ohms, in resistances
picofarads, in are capacitances text, the in or diagram circuit
the on indicated otherwise unless circuits, the of each In
others. suggest will also applications
intended the and experimenters, to others suggest will circuits
These amplifiers. IF three and amplifier, video one amplifiers,
RF four amplifiers, DC four for circuits offers chapter This
Amplifiers IF and RF, DC,
3 Chapter
 3N187
a 6V
10 mA
ON -OFF

DC OUTPUT

- Parts
1

R1 100K
B 6V, 10 mA RL (LOW
DC INPUT R1 100K S SPST 4v RESISTANCE)
3N187
+0

III Fig. 3-1. Current amplifier (DC).

 62
5.05. is amplifier the of gain voltage the and 5.05V, = 5.2-0.15
is thus voltage output actual The 5.2V. is terminals
output the at voltage corresponding the gain), maximum
for adjusted R, control gain ( MOSFET the of 1 gate at 1V
is signal input the When circuits.) -bucking DC conventional the
of one any of aid the with out balanced be may it objectionable,
is it if but terminals; output the to connected voltmeter 0-10 a
of scale the on discernible barely is This ( terminals. output the
at 0.15V of voltage static a produces current drain quiescent
the terminals, input the at signal zero With amplifier.
voltage DC simplest the is It output. and input signal DC
for circuit -followersource simple a is arrangement This
recommended.
is 3-2 Fig. in shown circuit the requirements, modest For
circuit. of type -stabilizedchopper a of complication the into
going without voltage DC a amplify to desired often is It
AMPLIFIER VOLTAGE DC
mA. 10 supplying of capable be should supply
6V the MOSFETS, individual to adaptable be to order In
resistance. R, low for highest being R1, resistance
load the of value the on heavily depends amplification current
actual The required. is therefore calibration Individual
here. given figures the than sensitive less or sensitive
more be can together put you circuit the so transconductance,
of values different show MOSFETS Individual
one. this as such amplifier current a
of applications most in trouble no causes too this but B, battery
floating the is also oddity circuit A applications. some in
consequence no of is this however, ; resistance) insertion high (
resistance input high of disadvantage the has circuit The
3000. is gain current the and µA, 1 = i, 1M, = R,
if Thus, gain. current higher correspondingly a and signal
-1 gate 1V the for current input lower a in results R, resistance
input of value higher A 300. is gain current resulting the
mA, 3 of change current drain corresponding the for and
mA, 0.01 = 0.00001A is R, resistor through current the input,
1V At mA. 6 approximately to increases current drain the 1V,
is 1 gate to applied drop voltage signal input the When circuits.
-buckingDc conventional the of one any of means by desired,
,
when meter) a as such ( device load the of out balanced
be can current quiescent this and circuit, output the in
flows DC mA 3 approximately of current drain residual A
source. the to returned
is MOSFET the of 2 Gate R,. through flowing current input
the than greater much is load, -resistancelow a through
flowing current, output the that result the with device, the of
 -o S/ON -OFF
1M 0 6+
DC INPUT
DC OUT PUT
GAIN Parts
+0 RI 1M R 270
R2 15K
0-
B 6V
R3 270 0.2 mA
B 6V, 0.2 mA
S SPST
3N187

cr)
/1/ Fig. 3-2. Voltage amplifier(oc).
 64
circuit. the of operation affect materially not will but current,
load different somewhat exhibit may MOSFETS Individual
mA. 1.6 approximately is supply 6V the from Drain
scale.
full to down meter the deflect will -0.25V a whereas scale, full
to up M meter deflect will signal input DC +0.25V a sensitivity,
maximum for set R, potentiometer control sensitivity
with Then zero. center to exactly set is M galvanometer
signal, input zero with adjusted, is R5 potentiometer When
balancing. bridge
in instrument the of resolution and sensitivity the enhances
greatly resistance increased The times. 555 resistance meter
the increasing apparently thus resistance, input 1M provides
amplifier The 180011. approximately is 2123) Model Simpson (
instrument µA 25-0-25 typical a of resistance internal The
model. µA 50-0-50 or µA 25-0-25 a be may M Meter
downscale. meter the drives signal input
negative a upscale; meter the drives terminals input amplifier
the at signal input positive A rest. of position -zero center
its from deflected be to meter the causes and bridge the
unbalances Q1) here, ( MOSFETS the of one of 1 gate to applied
signal input DC A terminals. output bridge the to connected
is M galvanometer and R5, potentiometer -setzero the of means
by voltmeter, electronic an of manner the in balanced, initially
is bridge The arms. opposite in are MOSFETS two the which
in circuit bridge -arm 4 a of consists itself amplifier This
R1. potentiometer control sensitivity
of resistance full the by largely determined 1M, of resistance
input an provides circuit This purpose. this for amplifier
DC balanced a of circuit the shows 3-3 Figure amplifier.
MOSFET a with increased greatly be may balancing bridge for
used is as such galvanometer DC a of resistance input The
AMPLIFIER GALVANOMETER DC
here). given figure gain the affecting (
transconductance of values different offer also will and
current operating different draw will MOSFE1N Individual mA.
0.2 approximately is supply 6V the from drain Maximum
reduced. be may potentiometer
this of resistance maximum the pickup, stray to susceptibility
reduced for Conversely, increased. be may R, potentiometer
of resistance full the source, signal DC a of loading reduced Fcir
correction). after ( DC 5.05V is voltage signal output maximum
corresponding The R,). potentiometer of settings appropriate
by maximum this to reduced are voltages signal Higher (
1V. is signal input DC recommended maximum The
 Parts
R1 1M
R2 1K
R3 100 R51
1K WW
R4 1K
R5 1K WW ZERO SET
8 6V, 1 6 mA
S SPST 9 DC OUTPUT 9
3N187
3N187 3N187
02 3N187
Qi
L-
M
J., S/ON -OFF
CENTER -ZERO
DC
MICROAMMETER

+0
1M
R2 1K R4 1K
DC INPUT RioSENSITIVITY ///
-0 6V
100 mA
R3

1/I Fig. 3-3. Dc galvanometer amplifier.

 66
latter. the from insulated L3and of end lower
the around closewound wire enameled 32 No. turns 12 L4
form. diameter
in. 1 a on closewound wire enameled 32 No. turns 130 L3
form. diameter
in. 1 a on closewound wire enameled 32 No. turns 130 L2
latter. the from insulated L2and of end lower
the around closewound wire enameled 32 No. turns 10 L1
Data. Coil -BandBroadcast 3-1. Table
winding gives 3-1 Table MHz. 30 to kHz 500 be can range
tuning the 3-5, Fig. in shown as coils, plug-in standard With
C,-C4. capacitor variable pF 365 dual a with tuned is circuit
The instruments. and receivers for booster or preselector
a as gain signal substantial provide can which amplifier
RF outrigger -stage single a of circuit the shows 3-5 Figure
AMPLIFIER RF GENERAL-PURPOSE
gain). voltage -follower source
the affecting latter this ( values transconductance different as
well as drains, current different show will MOSFEIS Individual
mA. 1 approximately is source 6V the from Drain
linear. approximately is circuit the of Response
potentiometer. -control gain a be may R, desired, If resistance.
output of values different somewhat with employed,
be may R2 and R, of values Other R2. resistor by largely
provided 200052, is resistance output The R1. resistor the by
chiefly provided 470K, is circuit the of resistance input The
follower. source the for 0.9 of gain voltage
a represnets it and 0.9V, = 1.65-0.75 of change voltage output
an is This 1.65V. is voltage signal output the 1V, is e, is
signal
input the When circuits. bucking conventional the of one any of
aid the with out balanced be easily may it however, instances,
other in concern; no of be will voltage initial this cases many
In 0.75V. of terminals output the at e0 voltage static a produces
R2, resistor source through flowing MOSFET, the of current
drain quiescent the zero, is e, signal input DC the When
load. a to resistance output low
a and source, signal DC a to resistance input high a presents
it is, that transformation; "impedance" provides circuit this
follower), cathode and follower emitter the counterparts, its
(and follower source AC familiar the Like use. -currentdirect
for designed circuit -followersource a shows 3-4 Figure
FOLLOWER SOURCE DC
 Parts
R1 470K
R2 2000
B 6V, 1 mA
S SPST
O 3N187

+0
DC INPUT S/ON- OFF
1+
-0 DC OUTPUT
Ri 470K 1+ 6V
1 mA

(3)
/I/ Fig. 3-4. Dc source follower.
rn TUNING
OD

3N187
O

L2 -7 L3
RF INPUT / RF OUTPUT
00
L L4
365 C4\ pF
Jl
Lc:1.4 -(341-e,
Parts R2
R1 60K
R2 910K 910K
R3 270 RFC
S ON -OFF
C1 365 _PM 0 0
C2 0.01 i.L.F 1 mH
C3 0.01 /IF
C4 365 pF 12V
B
C5
B
0.01 p.F
12V, 5 mA C2-0.01
k.LF 60K R3 270
037--,- 0.01 i.LF
I
-5 mA C5- 0.01 µF
RFC 1 mH
S SPST
3N187 I
/ // Fig. 3-5. General-purpose RF amplifier.
instructions for coils for the standard broadcast band. Owing
to the extremely low value of interelectrode capacitance in the
MOSFET, no neutralization is required.
In this circuit, the incoming RF signal, selected by the
input tuned circuit, is presented to gate 1 of the MOSFET; the
output signal is developed by drain current in the output tuned
circuit. Coaxial jacks (J, and J2) or other suitable terminals
lead the signal into and out of the amplifier. The negative
gate -1 bias is provided by the voltage drop resulting from the
flow of drain current through source resistor R3. Postive gate -2
bias is produced by voltage divider RI- R2. With an individual
MOSFET, resistor R2 may require some adjustment for
maximum amplification. If the amplifier is to be operated
above the standard broadcast band, shielding is
recommended; i.e., the unit should be enclosed in an
aluminum box.
Current drain from the 12V supply is approximately 5 mA.
An individual MOSFET may show a somewhat different load
current value.

SINGLE -ENDED TRANSMITTER -TYPE RF AMPLIFIER

The circuit given in Fig. 3-6 has an untuned input and a
tuned output. This is the type of circuit found in the exciter and
final -amplifier stages in transmitters, hence its designation
transmitter -type. The extremely low interelectrode
capacitance of the MOSFET enables this circuit to be operated
without neutralization. The circuit may be employed as given
in flea -powered transmitters and experimental equipment.
Tuning is accomplished with the single 100 pF variable
capacitor C5. Standard amateur -band plug-in coils may be
used (each coil set contains an L, and L2), or a single L1-L2
pair may be wound for a specific frequency, using coil -winding
instructions found in the various radio handbooks. The circuit
is entirely conventional and will be familiar to hams and
experimenters, with the exception that MOSFET Q replaces the
vacuum tube usually found in this circuit. Link -coupled,
low -impedance output is provided by coupling coil L2. In some
installations, however, capacitive coupling will be desirable,
and this can be provided by output capacitor C6, which will be
100 to 250 pF, depending upon individual requirements. When
capacitive output coupling is used, the small coil L2 is omitted.
In this amplifier circuit, the MOSFET receives its negative
gate -1 bias from the voltage drop resulting from the flow of
drain current through source resistor R4, and its positive
gate -2 bias from voltage divider R2- R3. With an individual
MOSFET, resistance R, may need some adjustment for

69
0 C6 (SEE TEXT)

3N187
Q

100 RF OUTPUT
C-1

TUNICN541
100
Parts
R1 1ro
R2 820
2.5 mH R3 9100
RFC1
R4 270
CI 100
RFC2 g 2.5 mH C2 0.002µF
RF INPUT B3
G3 0 002 /IF
9100 C4 0 002 tiF
G5 100
- OFF
R1 1M S7ON C6 SEE TEXT
B 18V. 6 mA
IX - - -
C2 0.002µF Ca 0.002 C4-0.002 RFC1 2.5 mH
R2 820 R4 270 ":1±-
,,
,, _ 18V /IF RFG2 2.5 mH
. S SPST
_T6mA Q 3N187
T i

// Fig. 3-6. Single -ended transmitter -type RF amplifier

maximum RF output. Maximum current drain from the 18V
source is approximately 6 mA.
Tuning of the circuit is straightforward: ( 1) Connect a
0-10 mA DC meter temporarily in series with the battery and
switch at point X. (2) Close switch S. ( 3) Disconnect any load
from the output terminals. (4) Apply the input signal to the
input terminals. (5) Adjust tuning capacitor C5 for minimum
dip of the milliammeter reading. ( 6) Connect the external
load, making any adjustments in the coupling ( coil L, or
capacitor C6) to bring the milliammeter reading up to 6 mA.
17) Retune C5, if necessary. for resonance.
The RF power output of the amplifier is approximately 36
mW. For this output, the driving signal at the input terminals
must be approximately 0.8V RMS. The circuit may be keyed for
cw transmission or amplitude -modulated for voice
transmission, in the usual manner.

PUSH-PULL TRANSMITTER -TYPE RF AMPLIFIER

The RF amplifier circuit shown in Fig. 3-7 is similar to the
one just described and shown in Fig. 3-6, except that the Fig.
3-7 circuit employs two MOSFETS in push-pull for increased
power output and good harmonic cancellation. The general
description of the single -ended circuit (preceding section)
applies also to this push-pull circuit, as do the tuning
instructions.
In Fig. 3-7, MOSFET Q, receives its negative gate -1 bias
from the voltage drop resulting from the flow of drain current
through source resistor R4, and its positive gate -2 bias from
voltage divider R7 -R3. Similarly, MOSFET Q2 receives its
negative gate -1 bias from the voltage drop resulting from the
flow of drain current through source resistor R7, and its
positive gate -2 bias from voltage divider R5-1?,. With
individual MOSFETS, resistors R3 and R, may require some
adjustment for maximum RF power output.
The RF power output of the amplifier is approximately 72
mW. For this output, the driving signal ( gate 1 to gate 1) must
be approximately 1.6V RMS. Maximum current drain from the
18V source B is approximately 12 mA. The circuit may be
keyed for cw transmission or amplitude -modulated for voice
transmission, in the usual manner.
100 MHz RF AMPLIFIER
Figure 3-8 shows the circuit of a radio -frequency amplifier
designed especially for operation at 100 MHz. The single 3N187
MOSFET is operated, together with its associated components,
inside a metal shield box. The circuit, which operates between

71
 3N187 Parts Ri 1M C3 0 002 µF
01 C4 0 002 µF
R2A3
821000
9 C5 (DUAL 100)
R4 270 B 18V, 12 mA
R5 820 RFC1 2.5 mH
R6 9100 RFC2 2.5 mH
R7 270 3N187
C1 (DUAL 100) 02 3N187
C2 0 002 µF

18V
12 mA

Fig. 3-7. Push-pull transmitter -type RF amplifier.

 ~64ItiliMPVROIDMIPEWAIWISIK

r Parts SHIELD
R1 470K C6 0.0015µF S1,2 DPST
R2 1.5M C7 3pF O 3N187
C1 7 pF C8
C8 3pF RF
C2 1-12 pF B1 1.5V 3N187 OUTPUT
C3 0.001 to,F B2 6V, 5 mA 3pF
C4 0.0015µF L1 0.15µH -.-(TO 500)
C1 C5 0.0015µF L2 0.22µH C7. y3 pF
RF 4--
INPUT " I(
7 pF Lea 0.22µH
(FROM._ co /-7-7
500) 1 -12 pF
R2
AA&
0.15µH 1.5M
/77 R1 470K

L C6
---
0.0015µF 0.0015µF 0.0015µF
FEEDTHROUGH FEEDTHROUGH

B2
B1 6V mA
II I
1.5V
ON-OFF
-4
oa
Fig. 3-8. 100 MHz RF amplifier.
 74
at used be may circuit This amplifier. -frequencyintermediate
-tuned double a of circuit the shows 3-10 Figure
AMPLIFIER IF -TUNED DOUBLE
MOSFETS. individual with somewhat vary can this althOugh
mA, 3 approximately is source 9V the from drain Current
shielded. is T transformer
IF as long so MHz, 10.7 at even required, not is circuit
the of shielding Extensive gain. IF maximum for adjustment
some require may R3 resistance MOSFET, individual
an With R2-R3. divider voltage by supplied is 2 gate for
bias positive the and R4, resistor source through current drain
of flow the from resulting drop voltage the from bias negative
its receives MOSFET the of 1 gate arrangement, this In
circuit. this by accommodated be may IF -frequency high
or -frequency low Either frequency. intermediate
desired the for T transformer IF -type tube standard, a through
coupled is signal output the and CI, capacitor coupling through
MOSFET the of 1 gate to applied is signal input The equipment.
test -typeheterodyne and receivers simple certain in desirable
is arrangement This output. untuned an and output tuned a has
3-9 Fig. in shown amplifier -frequency intermediate The
AMPLIFIER IF -TUNED SINGLE
S1-S2. switch -throwsingle
-pole, double the by simultaneously switched are batteries Both
current. no virtually supplies B battery, 1.5V The mosFurs.
individual with somewhat vary can this although mA,
5 approximately is B2 source 6V from current Maximum
equivalent. or 4584-E
Miller is (L2) coil output /LH 0.22 the and equivalent; or 4582-E
Miller is example, for (L1), coil input p..11 0.15 The required.
are components special no usable; are parts Commercial
dress. lead is as
important, very is wiring Rigid straight. be should preferably
and practicable, as path a direct and short as in run be must
leads all amplifier, this In shield.. the outside are switches
and batteries All leads. strategic for employed are C6) C5, C4, (
capacitors bypass Feedthrough employed. be not must returns
ground separate shown; as (chassis), shield the on point
single a to grounded are circuit the of portions Various
-required.is
neutralization no low, extremely is MOSFET the of capacitance
interelectrode the Because output. RF maximum for adjusted
are circuits tuned two These ends. (L2-C7) output and (LI-C2)
input both at tuned is load, 5051 and source signal 5051 a
 T

ff -
1
gio IF OUTPUT
I
3N187 Parts T I I\ 0
1,
0 R1 1M
R2 15K
L_ __
R3 82K
Cl
R4 270
C1 0.01 ALF
0.01 ALF C2 0.01 atiF
C3 0.01 J.I.F
B 9V. 3 mA
S SPST
O 3N187
R3
IF INPUT 1M
'OA
R1 82K
S \ON - OFF

15K ^ µFR2 R4 270 C31 0.01 AL F 9V

B
1 C2_0.01 mA
3.

T_

Fig. 3-9. Single -tuned IF amplifier.

 T2

3N187
a
IF OUTPUT
T,
r- Parts
. R1 1K

IF INPUT
-
'tr. -I- I R2 15K
R3 82K
L__
> T T R4 270
C1 0.01 µF
C2 0.01 µF
B 9V, 3 mA
S SPST
O 3N187

82K

S \ON-OFF

C1 0.01µF +0
1K R4 270
R2 15K B--- 9V
3 mA

1 I
- AGC INPUT

Fig. 3-10. Double -tuned IF amplifier.

either low or high frequencies (e.g., 455 kHz or 10.7 MHz). An
advantage is the use of conventional, tube -type IF
transformers (T, and T2) ; a further advantage is that no
neutralization is required, owing to the extremely small
interelectrode capacitance of the MOSFET.
This single -stage amplifier is entirely conventional and
requires no special explanation of theory or of adjustment.
While all leads must be run as straight and short as
practicable, no special gimmicks are necessary. Shielding is
not required except that provided in the IF transformers
themselves.
In this circuit, MOSFET Q receives its negative gate -1 bias
from the voltage drop resulting from the flow of drain current
through source resistor R4, and its positive gate -2 bias from
voltage divider R2 -R3. With an individual MOSFET, resistance
R, may require some adjustment for maximum IF gain.
Current drain from the 9V source is approximately 3 mA,
although this may vary somewhat with individual MOSFETS.
For increased gain and selectivity, two or three stages
identical with the one shown in Fig. 3-10 may be cascaded with
little difficulty, provided the usual decoupling RC filters are
employed.
REGENERATIVE IF AMPLIFIER
Figure 3-11 shows a conventional double -tuned IF amplifier
to which regeneration has been added for increased sensitivity
and selectivity. Like the preceding circuit, this one also may
be used at either low or high frequencies ( e.g., 455 kHz or 10.7
MHz), the IF transformers ( T, and T2) being chosen
accordingly. No neutralization is required, owing to the
extremely small interelectrode capacitance of the MOSFET.
To obtain a simple regenerative circuit, use is made of an
input IF transformer T, having a centertapped secondary
( such a commercial unit for 455 kHz is the Miller 1312-C3). The
matching output IF transformer T2 has untapped windings
(Miller 1312-C2). The tapped coil provides a Hartley -type
oscillator circuit with the gate -1 circuit of the MOSFET.
Regeneration is controlled by varying the positive gate -2 bias
with regeneration control potentiometer R3. When this
potentiometer is adjusted for operation just below the point of
oscillation, the sensitivity of the circuit is increased markedly,
especially for voice signals; when the adjustment is taken
slightly beyond the threshold point, the circuit will oscillate on
cw signals, making their reception possible without a separate
beat -frequency oscillator.
The regenerative IF amplifier is particularly useful in
receivers in which only a single IF stage is desired and in

77
-4
co
T2
r 1
3N187

IF OUTPUT
T1
r
tt L
IF INPUT

0.1 µF
R2

100K
Parts R4
R1 100K R1100K ---NAA-
100K 1800
R2
R3 100K - OFF
R3,,, 100K
s gON
R4 1800
C1 100 pF REGEN 7-7 0 1 ti.F
0.01
C2 0.01 µF
C2, -',././.F
C3 0.1 µF 19V
C4 0.1 p,F B-= 3 mA
B 9V, 3 mA
S SPST T_
O 3N187
//
Fig. 3-11. Regenerative IF amplifier.
 Parts
C5
R1 1M C3 55 - 300 pF
R2 470K C4 1000µF +1
R3 3.3M C5 25 25 p.F
R4 47 B 12V, 2 mA R6 2700
R5 220 L 24- 35 p.H
R6 2700 S SPST 3N187 1
C1 25µF 0 3N187
C2 0.02µF La:24-35 µH
II

25 iLF

R3

3.3M OUTPUT

0
OFF
INPUT
S \DN-
R4 47 C3,-455-300 pF
7:-.7 0.02 ;IF
1M R2 470K
B=- 12V
2 mA

R5 220 C4-1000 ki.F

CD Fig. 3-12. Video (wideband) amplifier.

 80
MOSFETS. individual with somewhat vary
may this but mA, 2 approximately is source 12V the from drain
Current kHz. 1 at gain maximum for adjustment some need
may R3 resistance MOSFET, individual an With C2. capacitor
by RF-bypassed R2-R3, divider voltage from bias -2 gate
positive its and series, in R, and R, resistors source through
current drain of flow the from resulting drop voltage the from
bias -1 gate negative its receives Q MOSFET circuit, this In
performance. -frequency high optimum for
dressed be leads that and direct, and rigid, short, be wiring all
that demands operation -frequency high successful type, this
of circuit a In MHz. 10 at amplifier the of gain maximum for
carefully adjusted are components these of Both equivalent).
(
or 4508 Miller iuH, 24-35 L coil -tunedslug and ) pF
55-300 ( C3 capacitor trimmer are elements peaking The
RMS. 1V approximately is voltage signal output maximum
corresponding the and RMS, 0.1V approximately is clipping
peak output before voltage signal input maximum The MHz. 10
at dB 6 approximately down and Hz 50 at dB 3 approximately
down is and kHz, 1 at 10 approximately is circuit
the of gain voltage -circuitopen The kHz. 1 at hold values
output and input These 2800f/. approximately is impedance
Output R,. resistor input the of resistance the by principally
determined 1M, approximately is impedance input The MHz.
10 to Hz 60 from extends circuit the of response Frequency
amplifier. video MOSFET simple a
of circuit the shows 3-12 Figure boosters). -voltmeter electronic
AC especially ( amplifiers instrument and channels,
vertical and horizontal oscilloscope channels, picture
TV in role their for principally known are but electronics,
in uses of multitude a find amplifiers Such frequencies.
radio high the into well frequencies audio low from operating
response, wideband exhibit which circuits -coupled RC
principally -appearing, simple are amplifiers Video
AMPLIFIER (WIDEBAND) VIDEO
MOSFETS. individual with somewhat vary may this although
mA, 3 approximately is source 9V the from drain Current
received. be signals cw
and AM both that dictate requirements general-purpose which
 Chapter 4
Control Circuits
and Devices

The high input resistance, high transconductance, and low

temperature drift of the MOSFET recommend this type of
transistor for use in control circuits and adjunct devices:
sensitive electronic relays, interval timers, alarm devices,
automation accessories, and so on. This chapter presents 20
such circuits, and these will suggest others to the alert
experimenter.
In each of the circuits, unless indicated otherwise on the
circuit diagram or in the text, capacitances are in picofarads,
resistances in ohms, and inductances in henrys. Resistors are
1/2W, and electrolytic capacitors are 25V. For simplicity,
batteries are shown for DC supply; however, a well filtered
power supply can be used instead of a battery.
Before undertaking the wiring and operation of any
circuit, read carefully the hints and precautions given in
Chapter 1.

ZERO -CURRENT DC RELAY

Figure 4-1 shows the circuit of a sensitive DC relay which
draws so little current (0.15 µA at 1.5V) that, for all practical
purposes, it may be considered a zero -current device. The DC
signal power required to close the relay is only 0.225µW.
The circuit consists of a single-mosFur DC amplifier with a
milliampere -type DC relay connected in a 4 -arm bridge circuit
in the drain output section. The bridge allows the static drain
current of the MOSFET to be balanced out of the relay (by
adjustment of potentiometer R3), and its four arms consist of
resistor R2, the two "halves" of potentiometer R3, and the
internal drain -to -source resistance of the MOSFET. The relay is
al mA, 1000SZ DC device ( Sigma 5F-1000 or equivalent) .

81
OD
R2

1K

3N187

Parts
R1 10M 1 mA, 10000
R2 1K
R3 1K WW
B 6V, 12 mA TO
K 1 mA, 10000 a ---O 2 CONTROLLED
S SPST CIRCUIT
Q 3N187

1 5V INPUT

Fk3 BALANCE

1K WW

0
6V ON-OFF

/Ii
Fig. 4-1. "Zero -current" cc relay.
 With zero signal input, balance control potentiometer R3 is
set to the point at which the relay opens. The circuit then will
remain balanced unless the setting of R3 is later disturbed.
When a 1.5V DC signal subsequently is applied to the input
terminals, the relay will close as a result of the consequent
unbalance of the bridge circuit. The input resistance of the
circuit ( 10M) is determined by gate -to -ground resistor RI. For
smaller input signal current than 0.15 µA, increase the
resistance of R, proportionately. Use output terminals 1 and 3
for operations in which the external controlled circuit must be
closed by the relay closure; use 2 and 3 for operations in which
the external controlled circuit must be opened.
When the relay is closed, current drain from the 6V supply
is approximately 12 mA, but this may vary somewhat with
individual MOSFE1S.

AC RF RELAY
The sensitive relay circuit shown in Fig. 4-2 operates on AC
control signals of reasonably low amplitude. This
arrangement consists of a relay -actuating DC amplifier
preceded by a shunt diode rectifier. For relay closure, an AC
input voltage of 1.1V RMS is required. The input resistance is
nearly 0.5M. (Owing to the high reverse resistance -10M at
-10V --of the 1N811 silicon diode D, high -value gate -to -ground
resistor R, can be used. )
The shunt diode rectifier circuit ( C, -D -R,) applies to the
gates of the MOSFET a positive DC voltage equal approximately
to the peak value of the AC input signal voltage; this is
approximately +1.5V when the AC input signal is 1.1V RMS, and
this is sufficient to close the relay. The junction capacitance of
the 1N811 silicon diode limits efficient performance of the
rectifier to the range extending from power -line frequencies to
the supersonic frequencies. For RF operation into the tens of
megahertz, use a 1N34A point -contact germanium diode; but
this will necessitate reducing resistance R, to 10K or less.
The MOSFET portion of the circuit provides a DC amplifier
with a milliampere -type DC relay connected in a 4 -arm bridge
circuit in the drain output section. The bridge allows the static
drain current of the MOSFET to be balanced out of the relay ( by
adjustment of potentiometer R3) ; its four arms consist of
resistor R2, the two "halves" of potentiometer R3, and the
internal drain -to -source resistance of the MOSFET. The relay is
a 1 mA, 100011 DC device ( Sigma 5F-1000 or equivalent).
With zero -signal input, balance control potentiometer R3
set to the point at which the relay opens. The circuit then Will
remain balanced unless the setting of R3 is later disturbed.

83
 R2
Jv\.A,
1K

Parts
R1 470K
R2 1K
F002 µF
R3 1K WW 1 mA, 1000SI
C1 0 02 i.LF
B 6V, 12 mA
D 1N811 TO
K 1 mA, 100051 A---02 CONTROLLED
S SPST CIRCUIT
Q 3N187
AC INPUT
(1.1V RMS) DW1N811
R3 BALANCE
1K WW

0
IN+ ON -OFF
6V

///
Fig. 4-2. AC- RF relay.
When a 1.1V AC or RF signal subsequently is applied to the
input terminals, the relay closes as a result of the consequent
unbalancing of the bridge circuit. Use output terminals 1 and 3
for operations in which the external controlled circuit must be
closed by the relay closure; use 2 and 3 for operations in which
the external controlled circuit must be opened.
When the relay is closed, current drain from the 6V supply
is approximately 12 mA, but this may vary somewhat with
individual MOSFETS.

SENSITIVE AF RELAY
Figure 4-3 shows the circuit of an audio -frequency AC relay
which operates on an input -signal voltage of 0.1V RMS. This
arrangement consists of a high -impedance -input AC voltage
amplifier Q,, shunt -diode rectifier C3- D - R6, and
relay -actuating DC amplifier Q9. The input AC amplifier has a
voltage gain of approximately 10, so that this stage presents a
signal voltage of approximately 1V RMS to the diode circuit.
The diode circuit, in turn, presents to the DC amplifier a
positive voltage equal approximately to the peak value of the
1V RMS output of Q,, or approximately +1.4V. This is sufficient
to close the relay. The input impedance of the circuit
( determined principally by the full resistance of sensitivity
control potentiometer 1:11) is 0.5M.
In the AC amplifier stage, MOSFET Q, receives its negative
gate -1 bias from the voltage drop resulting from the flow of
drain current through source resistor R5, and its positive
gate -2 bias from voltage divider R2- R3. With an individual
MOSFET Q resistance R3 may require some adjustment for
maximum voltage gain in the input stage. In the DC amplifier
stage, MOSFET Q2 drives a milliampere -type DC relay
connected in a 4 -arm bridge circuit in the drain output section.
The bridge allows the static drain current of Q2 to be balanced
out of the relay ( by adjustment of potentiometer Rd; its four
arms consist of resistor R7, the two "halves" of potentiometer
R, and the internal drain -to -source resistance of MOSFET Q.
The relay is a 1 mA, 10005i DC device ( Sigma 5F-1000 or
equivalent).
With zero signal input at the input terminals, balance
control potentiometer R8 is set to the point at which the relay
opens. The circuit then will remain balanced unless the setting
of R8 is later disturbed. With potentiometer R, set for
maximum sensitivity, when a 0.1V RMS signal subsequently is
applied to the input terminals, the relay closes as the result of
the consequent unbalancing of the bridge circuit. Use output
terminals 1 and 3 for operations in which the external

85
corn

R3Z1.5M R4 1800

3N187 3N187
02

1 mA, 10000
Parts
R1 0.5M
R2 470K
R3 1.5M
1800 02
R4
R5 270
3
R6 470K
1K
TO CONTROLLED
DW1N811 R7
1K WW R B ALANCE CIRCUIT
R6 R8
AF INPUT 8170 5M Ci 0 1 µF
470K 1K WW
0.1V C2 50 µF
I
RMSO C3 0.02µF
B 6V, 15 mA
S
D 1N811
R2 470K R5 270 2 -^,50 µF K 1 mA, 10000
ON -
S SPST
OFF
01 3N187
02 3N187
III
SENSITIVITY 6V
15 mA
Fig. 4-3. Sensitive AF relay.
controlled circuit must be closed by the relay closure; use 2
and 3 for operations in which the external controlled circuit
must be opened.
When the relay is closed, current drain from the supply is
approximately 15 mA, but this may vary somewhat with
individual MOSFE'M
LC -TUNED AF RELAY
Relay operation often is desired at a single frequency. In
Fig. 4-4, single -frequency operation is achieved by tuning the
AC amplifier stage of a circuit which is substantially the same
in other particulars as the one described in the preceding
section. Tuning is accomplished with parallel -resonant circuit
L-C2 in the drain circuit of MOSFET Q,. The AC output of the
tuned amplifier is rectified by the shunt diode circuit
C5-D-R5, and the resulting DC voltage is applied to DC
amplifier Q2, which, in turn, actuates milliampere -type DC
relay K.
Inductor L and capacitor C2 must be chosen for the desired
frequency Jr Generally, the inductor will govern the
caacitance, since few inductors for AF use can be varied. With
a given inductance L, the required capacitance C2 which can
be built up accurately can be determined with the aid of the
following equation, in which L is in henrys, C2 in farads, and fr
in hertz:
C2 = (Eq. 4-1)
39.512L
From this equation, it is seen that for an available 10H
inductor, the required capacitance C2 for resonance at 1000 Hz
is 0.0025µF.
The input AC amplifier Q, has a voltage gain of
approximately 10, so that this stage presents an amplified
signal voltage of 1V RMS to the diode circuit when the input
signal voltage at the input terminals is 0.1V RMS. The diode
circuit, in turn, presents to the DC amplifier Q2 a positive
voltage equal approximately to the peak value of the 1V RMS
output of Q1, or approximately +1.4V. This is sufficient to close
relay K.
In the DC amplifier stage, MOSFET Q2 drives a
milliampere -type DC relay in a 4 -arm bridge circuit in the
drain output section. The bridge allows the static drain current
of Q2 to be balanced out of the relay (by adjustment of
potentiometer R6), and its four arms are resistor R7, the two
"halves" of potentiometer R6, and the internal drain -to -source
resistance of MOSFET Q2. The relay is a 1 mA, 100051 DC device
(Sigma 5F-1000 or equivalent) .

87
OD
op R7
,\AA,
3N187 0.02 µF 1K
Qi

Ci
L
C 1 mA, 10000
1 'IF Parts _)
R1 0.5M C3 50µF
R2 470K 04 10 p.F
R3 1.5M 05 0.02µF
R4 270 B 6V, 15 mA
R5
R5 470K D 1N811 AD 23
L
470K
r0i R6 1KWW SEE 1N811
TO
R7 1K TEXT
CONTROLLED
C1 0.1 µF K 1 mA,
AF INPUT R1 CIRCUIT
R3 C2 SEE TEXT 10000 R6 v BALANCE
0.5M
POT
S SPST
1.5M 1KWW
Ot 3N187
G2 3N187
s
R2 470K R4 270
GI oF C4 +10 p.F
ON-
OFF

SENSITIVITY
6V
/ / 15 mA
Fig. 4-4. LC -tuned AF relay.
 With zero -signal input, balance control potentiometer R6 is
set to the point at which the relay opens. The circuit then will
remain balanced unless the setting of R6 is later disturbed.
When a 0.1V AC signal at the frequency determined by L and C2
then is applied to the input terminals (with potentiometer R,
set for maximum sensitivity), the relay closes as a result of
the consequent unbalancing of the bridge circuit. Use output
terminals 1 and 3 for operations in which the external
controlled circuit must be closed by the relay closure; use 2
and 3 for operations in which the external controlled circuit
must be opened.
When the relay is closed, current drain from the 6V supply
is approximately 15 mA, but this may vary somewhat with
individual MOSFETS.

RC -TUNED AF RELAY
The tuned audio -frequency relay circuit shown in Fig. 4-5
performs in the same manner as the LC -tuned circuit
described in the preceding section. The RC -tuned circuit,
however, needs no inductor, but achieves audio -frequency
tuning by means of a parallel -T network
(C2-C3-C4-R6-R7-R8) in the input stage of the circuit. In all
other respects, the circuit is similar to the one shown earlier in
Fig. 4-4. Resistance-capacitance tuning is of value when
iron -core inductors are to be avoided and when continuously
variable tuning is desired.
In this circuit, tuning to a peak is accomplished by
incorporating a null circuit (the parallel -T network) in the
negative feedback loop between the drain output and gate -1
input section of the first stage ( Q,) The result of this is that
.

negative feedback occurs at all frequencies except the null

frequency of the network ( null frequency Jr = 1/6.28R,C2 in
Fig. 4-5), which is removed by the network, canceling the gain
at those frequencies. But the amplifier has full gain at
frequency f,, since this one frequency is not included in the
feedback. The net result is tuned bandpass-peak response.
In the RC network, C2 = C3 = 0.5C4, and R6 = R, = 2R8.
When these relationships are preserved, the null frequency is
calculated as
1
Jr - (Eq. 4-2)
6.28R6C2

where fr is in hertz, R6 in ohms, and C2 in farads.

From Eq. 4-2, it is seen that for a parallel -T network in
which C2 and C3 are each 0.1 AF, C4 = 2C3 = 0.2 f.LF, R6 and R,
are each 15920, and R8 = 0.5R6 = 7960, the null frequency is

89
CiD
Parts
R1 10K R8 SEE TEXT C43 SEE TEXT D 1N811
R2 1M R9 1800 C4 SEE TEXT K 1 mA, 1000f2
R3 470K R10 470K C5 50µF S SPST
R4 1.5M R11 1K C6 10µF 3N187
R5 270 R12 1KWW 07 10µF 02 3N187
FI8 SEE TEXT C1 0.1 µF C8 0.02µF
R7 SEE TEXT C2 SEE TEXT B 6V, 15 mA
3N187
3N187
01
02
0.02 µF.
C j1 mA,100012
1 TO
CON-
Rlo 470K
-02 TROLLED
= 3 CIRCUIT
D 1N811
R12, BALANCE
1K WW
R4

1 5M
SPST

1+ ON-
470K R5 270 C5" 50 /IF C8 10µF
OFF
B

III
T
SENSITIVITY ev
/// 15 mA
Fig. 4-5. RC -tuned AF relay.
1000 Hz (the peak frequency frof the amplifier). In general, it
is best to select the three capacitances (C2 = C3 = 0.5C4) and
then to adjust the resistances to exact values ( R6 = R, = 2R8)
as required. The following equations-in which resistances are
in ohms, capacitances are in farads, and peak frequency is in
hertz-will help:
R6 = R7 - (Eq. 4-3)
6.281,C2
R8 = 0.5R6 (Eq. 4-4)
The resistances and capacitances must have exact values.
The sharpness of tuning will depend upon the closeness with
which these components meet specified values. The circuit
may be made continuously tunable by using a 3 -gang
potentiometer for R6 -R7 -R8 and switching the capacitors in
groups of three to change frequency ranges. In this way, the
amplifier can be given tuning ranges of 20-200 Hz, 200-2000
Hz, and 2-20 kHz, to cover the audio -frequency spectrum.
Input AC amplifier Q1 has a voltage gain of approximately
10, so that this stage presents an amplified signal voltage of 1V
RMS to the diode circuit C8 -D -R10 when the signal voltage at
the input terminals is 0.1V RMS and potentiometer R2 is set for
maximum sensitivity. The diode circuit, in turn, rectifies this
voltage and presents a resulting DC voltage to DC amplifier Q2.
This latter voltage is approximately +1.4V, which is the peak
value of the 1V RMS output of the first stage. This is sufficient
to close the relay.
In the DC amplifier stage, MOSFET Q2 drives a
milliampere -type DC relay in a 4 -arm bridge circuit in the
drain output section. The bridge allows the static drain current
of Q2 to be balanced out of the relay ( by adjustment of
potentiometer R12), and its four arms consist of resistor R,,,
the two "halves" of potentiometer Ri, and the internal
drain -to -source resistance of MOSFET Q2. The relay is a 1 mA,
100051 device (Sigma 5F-1000 or equivalent).
When the relay is closed, current drain from the 6V supply
is approximately 15 mA, but this may vary somewhat with
individual MOSFETS.

COINCIDENCE RELAY
A relay that closes when two signals arrive at the same
instant ( or when they overlap for a part of their duration) is
useful in various counting, sampling, and automatic control
systems. Figure 4-6 shows a coincidence relay of this type,
employing a single MOSFET. A MOSFET in this application
presents high resistance (low loading) to both signal sources.

91
cr) Parts
R3
R1 1M NAA.,
R2 1M 1K
R3 1K
Ft4 1K WW
B 12V, 24 mA
K 2 mA, 25000 2 mA, 25000
3N187
S SPST O
O 3N187 1

TO
2 CONTROLLED
CIRCUIT
r--3 A--30 3
INPUT 10

R"
BALANCE
INPUT 20
1K WW
1M R2 1M
COMMON0

0
ON OFF
12V 24 mA

Fig. 4-6. Coincidence relay.

 Each input signal has a voltage of +1.5V. Signal 1 is
applied to gate 2 of the MOSFET, and signal 2 is applied to gate
1. When either one of these signals is applied alone, the
drain -current increase that it produces is insufficient to close
the relay. When both signals are applied at the same time,
however, the increase in drain current will do so.
The circuit is essentially that of a DC amplifier. The relay
operates in a 4 -arm bridge in the drain circuit. The bridge
allows the static drain current to be balanced out of the relay
( by adjustment of potentiometer R4) ; its four arms consist of
resistor R3, the two "halves" of potentiometer R4, and the
internal drain -to -source resistance of MOSFET Q. The relay is a
2 mA, 25000 device (Sigma 5F-2500 or equivalent). With zero
signal at input 1 and input 2, balance control potentiometer R4
is set to the point at which the relay opens. The circuit then will
remain balanced unless the setting of R4 is later disturbed. Use
output terminals 1 and 3 for operations in which the external
controlled circuit must be closed by the relay closure; use 2
and 3 for operations in which the external controlled circuit
must be opened.
When the relay is closed, current drain from the 12V
supply is approximately 24 mA, but this may vary somewhat
with individual mosFETs.

SENSITIVE PHOTOELECTRIC RELAY

The output of a conventional selenium self -generating
photocell ( typically 0.3V DC, 77 /IA, at 100 footcandles ) is too
low to operate a DC relay directly. The circuit given in Fig. 4-7
provides a simple DC amplifier for boosting the output of such
a photocell. -In this circuit, the DC output of photocell PC is
applied directly to the MOSFET ( positive output to the gates
connected in parallel, and negative output to the source
electrode), and a milliampere -type DC relay is operated in a
4 -arm bridge in the drain circuit.
The bridge-consisting of resistor R2, the two "halves" of
potentiometer RI, and the internal drain -to -source resistance
of the mosFET-allows the static drain current to be balanced
out of the relay ( by adjustment of potentiometer R,) The .

relay, K, is a 1 mA, 10000 device ( Sigma 5F-1000 or

equivalent) .

With the photocell darkened, balance control

potentiometer R, is set to the point at which the relay opens.
The circuit then will remain balanced unless the setting of R, is
later disturbed. When the photocell subsequently is
illuminated, the relay will close. Use output terminals 1 and 3'
for operations in which the external controlled circuit must be

93
ct) Parts
R2
R1 1K WW
R2 1K 1K
B 6V, 12 mA K
K 1 mA, 10000
PC SELENIUM PHOTOCELL
S SPST 1 mA. 100052
3N187
O 3N187

TO CONTROLLED
A-0 2 CIRCUIT

PC

POS
Rte BALANCE

NEG 1K WW

III+

6V
ON-OFF

Fig. 4-7. Sensitive photoelectric relay.

closed by the relay closure; use 2 and 3 for operations in which
the external controlled circuit must be opened.
When the relay is closed, current drain from the 6V supply
is approximately 12 mA, but this may vary somewhat with
individual MOSFETs.

TEMPERATURE -SENSITIVE RELAY

Figure 4-8 shows the circuit of an electronic
temperature -sensitive relay. In this arrangement, a
thermistor ( thermally sensitive resistor) R, is operated from
the 6V DC supply along with a simple DC amplifier based on the
MOSFET Q. The DC output of the thermistor is applied to the
MOSFET to close the relay.
The thermistor and potentiometer R2 form a voltage
divider which allows close selection of the
temperature -dependent voltage applied to the gates. As the
temperature rises, the resistance of the thermistor decreases
proportionately, allowing the thermistor current to increase
and the output of potentiometer R2 ( and accordingly the gate
voltage) to increase. Potentiometer R2 is adjusted to the point
at which the gate voltage at the desired temperature is
sufficient to close the relay.
Relay K operates in a 4 -arm bridge-consisting of resistor
R4, the two "halves" of potentiometer R3, and the internal
drain -to -source resistance of the MOSFET-in the drain circuit.
This bridge allows the static drain current to be' balanced out
of the relay ( by adjustment of potentiometer R3) The relay is
.

a 1 mA, 100011 device ( Sigma 5F-1000 or equivalent) .

With the thermistor temporarily disconnected, balance

control potentiometer R3 is set to the point at which the relay
opens. The circuit then will remain balanced unless the setting
of R3 later is disturbed. The thermistor may be a Fenwal
GB42JM1 device, or the equivalent.
When the relay is closed, current drain from the 6V supply
is approximately 14 mA.

TOUCH -PLATE RELAY

Figure 4-9 shows the circuit of a simple electronic relay
that responds to a light touch of the finger. Such touch -plate
relays have become common for operating all sorts of
electrical equipment. In this arrangement, gate 1 of the
MOSFET is grounded, and gate 2 is allowed to float and is
connected to the pickup, which is a small disc of sheet metal or
foil. The floating gate is highly susceptible to pickup, so that
merely touching the finger to it couples in enough stray pickup
energy to drive the MOSFET.

95
 Parts
R4
R1 THERMISTOR AAA,
R2 10K WW 1K
R3 1K WW
R4 1K
B 6V, 14 mA 1 mA, 10000
K 1 mA, 10000 3N187
S SPST
Q 3N187
TO
2 CONTROLLED
CIRCUIT

THERMISTOR

R3 BALANCE
NXA,
1K WW
10K WW
R2
TEMPERATURE

O
ON-OFF
6V

Fig. 4-8. Temperature -sensitive relay.

 METAL PLATE OR DISC

Ri
NAA,
1K
3N187
O
1 mA, 10000

TO CONTROLLED
02
CIRCUIT
Parts
R1 1K
R2 1K WW
R2vTivBALANCE
B 12V, 16 mA 1K WW
K 1 mA. 10000
S SPST
O 3N187

1111+
0
ON- OFF
12V
/ //
c0
Fig. 4-9. Touch -plate relay.
 98
should hand the Withdrawing closes. relay the until R3 control
sensitivity and C2 trimmer adjust and antenna the to close
hand the bring Then opens. just relay the until R5 of setting the
off back Next, closes. K relay until R3 control sensitivity and
R5 control threshold of adjustments between forth and back
work Then operator's. the including bodies, nearby any from
antenna pickup the protect initially, circuit the up set To
relay. the closes turn, in which, amplifier DC
2N2712 the of input base the to coupled is change This change.
small a undergoes current drain MOSFET the end), its on plate
(
or disc metal a without or with wire of piece short a antenna
pickup the near comes body human the of part other or hand
a when and lightly; oscillates stage MOSFET The 695.) Miller
as such T, unit commercial a in self-contained are components
these of three All ( RFC. choke -frequencyradio and C2,
capacitor trimmer L, inductor with conjunction in frequency
radio high a at operates Q, MOSFET arrangement, this In
stage. amplifier DC -gain high the in transistor bipolar silicon a
and stage -frequency radio sensitive the in MOSFET a employing
relay capacitance a of circuit the shows 4-10 Figure
devices. -intrusionanti other and alarms
burglar in found often are They applications. nonelectronic
in as well as electronics, of areas many in familiar
are relays, instrusion called also relays, Capacitance
RELAY CAPACITANCE
MOSFETS. individual with
somewhat vary may this but mA, 16 approximately is supply
12V the from drain current closed, is relay the When
opened. be must
circuit controlled external the which in operations for 3 and
2 use closure; relay the by closed be must circuit controlled
external the which in operations for 3 and 1 terminals
output Use close. will relay the touched, is subsequently
plate pickup the When disturbed. later is R2 of setting the
unless balanced remain will then circuit The opens. relay the
which at point the to set is R2 potentiometer control balance
bodies, nearby any from protected plate pickup the With
equivalent). or 5F-1000 Sigma (
device 1000f1 mA, 1 a is relay The R2). of adjustment by ( relay
the of out balanced be to MOSFET the of current drain static
the allows mosFET-which the of resistance -source -to drain
internal the and R2, potentiometer of "halves" two the
R,, resistor of circuit-consisting bridge -arm4 a in connected
is relay The circuit. drain its in relay DC -type milliampere
a with amplifier DC simple a as serves MOSFET The
TW-r j1.11-...

Parts
ANTENNA
R1 10M
ci 'PICKUP 1
R2 820
T (SEE TEXT)
T0 R3 5KWW
R4 2.2K
601_, R5 200 WW
I
c2 Ci 0.1 i..(F
RFC C2 SEE TEXT
I
"-4
C3 0.002
C4 0.01 ALF
L B 9V, 15 mA
3N187 2N2712
K 1 mA, 100051
Qi 02
WW S SPST
R5,4200 T SEE TEXT
THRESHOLD Qi 3N187
K 02 2N2712

1 mA, 10000

10M R34A,
Ri
5KWW 2.2K
SENSITIVITY Ca 0.01µF 2
SPST TO
C3-0.002 CONTROLLED
R2 820 T CIRCUIT
ION-OFF

1111+
9V

CD
Fig. 4-10. Capacitance relay.
 100
MOSFET, the of smallness the of Because model. -tubevacuum
usual the of that to comparable performance affords
MOSFET the of resistance input high very the which in timer
interval conventional a of circuit the shows 4-12 Figure
TIMER INTERVAL
2N2712. and 3N187 individual an with
somewhat vary may this but mA, 17 approximately is supply
12V the from drain current closed, is relay the When
RI. of adjustment
the down turning by accommodated be may then intensities
Louder closes. just relay the that so R5 adjust noise, of level
desired the up picking microphone the with Then, sensitivity.
maximum for R, control sensitivity set Initially,
opened. be
must circuit controlled external the which in operations for 3
and 2 use closure; relay the by closed be must circuit external
the which in operations for 3 and 1 contacts output Use
equivalent). or 5F-1000 Sigma ( device 10000 mA, 1 a is relay
The needed. is circuit balancing no so relay, the affect cannot
it low, so is 2N2712 the of IC° current static the Since 2N2712.
the of circuit collector the in directly operates relay The
base. Q2 the to applied is voltage DC positive a that so 4-11, Fig.
in shown as poled be must diode The K. relay closes and DC the
amplifies then transistor latter The Q2. of base the to voltage
DC resulting the delivers turn, in which, Q2) transistor of path
-emitter -to base internal the and D, (C3, circuit rectifier shunt
the to voltage sound amplified an delivers MOSFET The
RI. potentiometer control sensitivity through MOSFET the
of 1 gate to voltage AC proportionate a delivers and sound the
up picks (MIC) microphone crystal small A K. relay driving
amplifier DC a as Q2 transistor bipolar silicon and rectifier,
signal a as D diode amplifier, voltage AC an as acts MOSFET the
arrangement, this In intensity. proper the of sound a "hears"
it when relay a closes 4-11 Fig. in shown circuit The
SWITCH SOUND
2N2712. and 3N187 individual an with somewhat
vary may this but mA, 15 approximately is supply 9V
the from drain current closed, is relay the When equivalent).
or 5F-1000 Sigma ( device 10000 mA, 1 a is relay The
intermittently. -operateself
will it that adjusted so be not must circuit The it. open should
hand the withdrawing and relay, the close should antenna
the from distance desired the to hand the bringing adjusted,
correctly is circuit the When open. to relay the cause then
 R4Z 470K
1 mA, 10001)
R5 0 5M
LEVEL R6 1800 2N2712
ADJUST C3

3N187
a--0 2
0.1 /..).F
01
3
Parts Ri 1M TO
R2 470K CONTROLLED
R3 270 C
R4 470K
0.1 µF D 1N811
R5 0.5M
R6 1800
MIC
GI 0.1 tiF
1M C2 50µF 12V
Ri C3 0.1 /J.F
SENSITIVITY B 12V, 17 mA
CRYSTAL D 1N811
R2 470K C2 K
MICRO-
PHONE
TR3 270
I 50µF
S
1 mA, 100011
SPST
3N187
Q2 2N2712

/1 Fig. 4-11. Sound switch.

 Parts
R1 50K WW B2 6V, 12 mA
R2 1K WW K 1 mA, 1000(2
R3 1K Si PUSHBUTTON
Ci 1000µF, 3V S2 SPST
Bi 1.5V O 3N187

1 mA. 10000
3N187
f, START O

2 TO
CONTROLLED
CIRCUIT
1 5V ti 3

R1 50K WW
--0.1 TIMING
R2v7A13ALANCE
1K WW
Ci 1000µF
3V

B2
O
1111+
6V ON-OFF
///
Fig. 4-12. Interval timer.
relay. 1000 µF ( 3V) capacitor, and other components, the
entire unit can be very small and compact.
In this arrangement, the 3N187 MOSFET serves as a simple
DC amplifier driving relay K in its drain circuit. When
pushbutton switch S, is depressed momentarily, capacitor C, is
charged from 1.5V cell B,. At the same time, relay K is closed.
When S, then is released, capacitor C, discharges at a rate
determined by resistance R, and capacitance C, ( the time
interval before the relay drops out is closely equal to the time
constant of the circuit: t = RC seconds). The time instant that
the relay drops out may be controlled by proper setting of
timing control rheostat R,. With the 50,00051 control and 1000
/IF capacitor shown, the maximum time interval is 50 sec.
Other maximum values may be obtained by appropriate
selection of C, and R, values in accordance with the
time -constant formula.
The relay is a 1 mA, 100052 device ( Sigma 5F-1000 or
equivalent) operated in a 4 -arm bridge in the drain circuit. The
bridge-consisting of resistor R3, the two "halves" of balance
control potentiometer R2, and the internal drain -to -source
resistance of the mosFur-allows the static drain current to be
balanced out of the relay (by adjustment of potentiometer R2)
before attempting to operate the timer.
When the relay is closed, current drain from the 6V supply
B2 is approximately 12 mA, but this may vary somewhat with
individual MOSFETS. The 1.5V cell, B1, is used only
intermittently, supplying charging current to capacitor CI, and
should enjoy long life, especially if a size D celrls used.
Vg

CONTINUOUSLY VARIABLE PHASE SHIFTER

Figure 4-13 shows the circuit of a device which will give
smooth variation of phase between input and output of
approximately zero to 180° by adjusting a single control (R6).
The circuit is basically that of a common -source amplifier
with unbypassed source resistor ( R4).
When R6 is adjusted to full resistance, it offers minimum
loading of the MOSFET, and the output signal is effectively
taken from the drain electrode and is 180° out of phase with the
input signal. When instead, R6 is adjusted to zero
(potentiometer minimum), the output signal is effectively
taken from the source electrode, somewhat in the manner of a
source follower, and the output is of the same phase ( 0°) as the
input. Between these two limits, a smooth variation of phase is
obtained. Capacitor C3 for output coupling must be chosen, -
with respect to the external load, such that it does not

103
 C2 Ca (SEE TEXT)
IC
3N187 0.01 AF
O

CI (SEE TEXT)
R5 1000"

OUTPUT

500K 0
.
PHASE ADJ
1:11

1M
INPUT Ri
R3
GAIN
Parts I
1 5M ON-OFF
Ri 1M 6V
R2 470K 02 0.01 p_F
470K 1000' R3 1.5M CG SEE TEXT
R2 R4
R4 1000* B 6V, 10 mA
R5 1000* S SPST
R6 500K 0 3N187
Ci SEE TEXT *R4 MUST MATCH R5

/ Fig. 4-13. Continuously variable phase shifter.

introduce additional undesired phase shift. This applies also to
input capacitor CI.
Voltage gain of the circuit is approximately 3.5. The
maximum input signal voltage before peak clipping is 0.6V
HMS: the corresponding output signal voltage is 2.1V RMS. In
this circuit, gate 1 of the MOSFET receives its negative bias
from the voltage drop resulting from the flow of drain current
through source resistor R4, and gate 2 receives its positive bias
from voltage divider R2- R3. With an individual MOSFET,
resistance R, may need some adjustment for maximum gain.
Current drain from the 6V source is approximately 10 mA,
but this may vary somewhat with individual MOSFETS.
STEP -TYPE PHASE SHIFTER
The circuit shown in Fig. 4-14 is of the same type as the
variable phase shifter described in the preceding section and
shown in Fig. 4-13, except that here the phase is varied in steps
by means of phase selector switch S2, instead of being
continuously variable. This difference will suit many
applications calling for discrete steps of phase. A common
capacitor (C2, 0.01 µF) is employed for all phase steps. It is
only necessary, then, to preset each of the potentiometers ( R6,
R,, R8...Rn) for the desired phase shift, with the aid of an
oscilloscope set up for Lissajous patterns. Each potentiometer
can be 500,00011 maximum.
The general particulars of operation of the circuit are the
same as those given for the variable phase shifter in the
previous section.

SENSITIVE CARRIER -FAILURE ALARM

A carrier -failure alarm is a useful monitor at radio
stations of all kinds that remain on the air for extended
periods. When amplification is employed in a device of this
type, very little RF pickup is required, and no connection to the
transmitter is necessary. Figure 4-15 shows a carrier -failure
circuit embodying a diode detector and MOSFET DC amplifier.
The latter operates a relay which actuates the alarm device
itself.
A simple diode detector circuit is employed. This consists
of tuned circuit L-C,, 1N34A germanium diode D, load
resistor RI, bypass capacitor C2, radio -frequency choke RFC,
and bypass capacitor C3. Capacitance C, and inductance L are
selected to resonate at the frequency of the monitored carrier.
Table 4-1 gives coil -winding instructions for coils to cover the
frequency range 440 kHz to 30 MHz when C, is a 365 pF variable -
capacitor. For ham bands, use a 100 or 50 pF capacitor and

105
3)
a) C3

C2
(SEE TEXT)

C1 (SEE TEXT)

Rns: OUTPUT (Eo)

R5 1000'

(19n:1; 0
0
S2 PHASE SELECTOR
1M
INPUT Ri 4
GAIN R3
0
1.5M Parts ON -OFF
R1 ,1M C2 0.01µF
R2 470K C3 SEE TEXT
R2 470K R3 1.5M B 6V, 10 mA
R41000' R4 1000' S1 SPST
R5 1000* S2 SEE TEXT R6, R7, Rg, Rn EACH 500K
Ci SEE TEXT 0 3N187 'R4 MUST MATCH R5

III
Fig. 4-14. Step -type phase shifter.
 PICKUP ANTENNA
R3

1K

1 mA. 10000

a----0 2
Lo Ci TUNING 3
TO
R1 2.7K C2 CONTROLLED
Parts CIRCUIT
R1 2.7K
R2 IF BALANCE
R2 1KWW Mh
R3 1K 1K WW
C2 0 002 p.F
C3 0.002µF
B 6V, 12 mA
D 1N34A
RFC 2.5 mH
K
B
1 mA, 10000
S SPST 1111+
Q 3N187 6V ON -OFF
O SEE TEXT FOR L AND Ci
Fig. 4-15. Sensitive carrier -failure alarm.
 108
reduced is E, not, does gate other the but signal, its receives
gates the of one either If +2V. = E, output Normally, signal.
switching -1.5V a receive MOSFET each of gates The
resistor.
this across from taken is Output R5. resistor, source common
a having amplifiers DC two of that essentially is
arrangement
The source. switching the on drain low accordingly and
resistance input high provides arrangement this in MOSFETS
of use The circuits. counting or control in operation AND logic
the performs which circuit AND -stage 2 a shows 4-16 Figure
CIRCUIT AND LOGIC
off). switched be to is that lamp a example, (
3d open be must circuit external the when 3 and 2 use
; on)
switched is that bell or lamp a (example, actuation relay
the by closed be must device alarm external the of circuit
the when 3 and 1 terminals output Use MOSFETS. individual
with somewhat vary may this but mA, 12 approximately is
supply 6V the from drain current closed, is relay the When
instrument. the
operate to attempting before R2) potentiometer of adjustment
(by relay the of out balanced be to current drain static the
mosFET-allows the of resistance -source-to drain internal the
and R2, potentiometer -controlbalance of "halves" two the R3,
resistor of bridge-consisting The section. drain the in circuit
(
bridge -arm 4 a in operated equivalent) or 5F-1000 Sigma
device 100011 mA, 1 a is relay The relay. the drives and DC
the amplifies MOSFET The Q. MOSFET the of gates the to voltage
Pc positive a delivers D diode in, tuned is signal a When
wire. vertical stiff of section
short a or whip vertical standard a be can which antenna,
small a by up picked is signal The desired. not is 4-1 Table
by provided coverage wide the when capacitance, chosen
the with go to coils -typetransmitter manufactured, standard,
variable.) pF 365 = Ci capacitor tuning on '(based
in. 1/2 of length winding to Space form.
diameter in. ,/2 on wire enameled 22 No. turns 5V2 MHz 18-30
in. 1/2 of length winding to Space form. E Coil
diameter in. V2 on wire enameled 22 No. turns 10 MHz 8-20
form. diameter in 1/2 D Coil
on closewound wire enameled 26 No. turns 27 MHz 3.4-9
form. diameter in. 1/2 C Coil
on closewound wire enameled 32 No. turns 65
MHZ 1-3.5
form. diameter in 1 on B Coil
closewound wire enameled 32 No. turns 187 kHz 440-1200
A Coil
Alarm.* -FailureCarrier Sensitive for Data Coil 4-1. Table
 0
3N 1 87 ON-OFF
Q1

\ 16V
B
B-
R1 4- 2 mA
1nA.
I
470K Parts

4.7M R1 470K
R2 4.7M /
R3 470K
R4 4.7M
R5 1K
B 6V. 2 mA
S SPST
Qt 3N187
Q2 3N187

R521K OUTPUT

COMMON +

/-7-7

O
(.13 Fig. 4-16. Logic AND circuit.
 110
mosFETs. individual with values these from different
somewhat be may currents The mA. 1.2 approximately
is B2 battery from that and mA, 10 approximately is B, battery
from drain current operation, full in is circuit the When
times. 1.87 amplified been
has time, same the at and, inverted been has voltage input
the Thus, -2.8V. approximately becomes terminals output the
at voltage the terminals, input the to applied is subsequently
signal +1.5V a When disturbed. later is R3 of setting the unless
balanced remain will then circuit The terminals. output the
at voltage zero for R3 potentiometer control balance adjusting
by signal) input zero (with balanced is circuit the Initially,
direction. negative the in but increases, actually voltage
output the so R3; potentiometer of adjustment by out balanced
been has voltage output static the however, Initially, voltage.
drain the reduces which current, drain in increase an causes
This source. the to respect with positive become MOSFET
the of gates the applied, is signal switching input the When
source. -signal switching the of loading
negligible accordingly and impedance input high provides
arrangement this in MOSFET a of Use output. its in -S2-1?,) (B2
section bucking conventional a with amplifier DC simple a be
to seen is This this. accomplishing for circuit of type one shows
4-18 Figure amplified. as well as polarity in changed be must
trigger or signal DC a circuits, counting or control some In
INVERTER SIGNAL DC
circuit) the
switch will E2 or (E, operation the perform will signals input
the of one either Thus, 0.25V. to drops E, however, applied,
is E2 or E, either If IV. = E, voltage output Initially, signal.
switching +1.5V a receives MOSFET the of gate Each
amplifier. DC -stage single
-input, dual a essentially is arrangement The source.
-signal switching the on drain low accordingly and resistance
input high provides arrangement this in MOSFET a of use The
circuits. counting or control in operation OR logic the performs
which circuit OR -stage single a shows 4-17 Figure
CIRCUIT OR LOGIC
mosFors. individual with somewhat vary
may this but mA, 2 approximately is supply 6V the from drain
current function, AND the performing is circuit the When
zero. to reduced is Eo present), are E2 and E, is, that ( however
time, same the at signals -1.5V their receive gates both If
R5. through flowing current drain reduced of because slightly
 Parts
Ri 470K ON-OFF
R2 470K bV
R3 4.7M
B.= 2 mA
R4 4.7M
2.2K R52 2.2K
R5
B 6V, 2 mA /
S SPST
O 3N187 3N187
Flt O
470K
Eimi +1.5V
R2
Ein2 +1.5V
470K
COMMON -o 0+
R3 4.7M R4 4.7M OUTPUT

0-

Fig. 4-17. Logic OR circuit.

 R3 BALANCE
5K WW
Parts
R1 470K -10M
B2 500
3N187 R3 5K WW
Bi 6V, 10 mA
B2 6V,1.2 mA
R2 500 B1,2 DPST
Q 3N187

+0
ON-OFF
INPUT (0-1.5V) Si S2
Ri 470K -10M

-o OUTPUT
B2
Bi -
I 6V (0-2.8V)
mA
6V
T10 1.2 mA

i+

Fig. 4-18. Dc signal inverter.

DC IMPEDANCE CONVERTER
Figure 4-19 shows the circuit of a device that presents a
high resistance to a DC source and a low resistance to a load.
This is essentially a DC source follower, and it is useful in all
control and instrumentation applications in which as much as
possible of a DC voltage must be transmitted from a
high -resistance source to a low -resistance load. The input
resistance is determined chiefly by the full resistance of
sensitivity control potentiometer R1; however, beyond 5M or
so. problems may be encountered with stray pickup. The
output resistance is closely that of the the source resistor
( here. 500f/1.
Initially, a static DC voltage appears at the output that is
the result of the voltage drop produced by drain current
through source resistor R2. But this voltage is balanced out by
adjustment of potentiometer R3. The circuit then remains
balanced unless the setting of this potentiometer is later
disturbed. When a +1.5V signal subsequently is presented to
the input terminals, with R, set for maximum sensitivity, the
voltage at output terminals swings to +0.9V.
When the circuit is in full operation, current drain from
battery B1 is approximately 0.45 mA, and that from battery B2
is approximately 2.6 mA. The output load device should not
have a resistance lower than 20001/.
DUAL -POLARITY OUTPUT ADAPTER
The device whose circuit is given in Fig. 4-20 delivers both
positive and negative outputs simultaneously in response to a
positive input signal. Such a device is serviceable in certain
counting and control systems. There are numerous ways of
achieving dual -polarity DC output, but this is a simple method
providing high input resistance and a common ground.
This circuit is seen to be similar to the inverter shown in
Fig. 4-18, but with outputs taken from both the drain and
source electrodes. Each output contains a conventional
battery -and -rheostat bucking circuit to balance out the static
voltage due to drain current through drain resistor R5 and
source resistor R2. After the circuit is initially balanced with
these elements ( adjustment of rheostats R3 and R4),
application of a +1.5V signal at the input terminals results in a
-2.7V signal at the negative DC output terminal and a +0.9V
signal at the positive DC output terminal.
During full operation of the circuit, current drain from
each of the batteries is approximately 3.2 mA, but this may
vary somewhat with individual MOSFETS.

113
J
-a

3N187 Parts
O R1 0.5-5M
R2 500
R3 1K WW
B1 1.5V
B2 6V, 2.6 mA
S1,2 DPST
O 3N187

+0
DC INPUT 1K WW
(0-1.5V) 0.5 - 5M BALANCE
SENSITIVITY ON -OFF
0
\S2 DC OUTPUT
(0- 0.9V)
R2 500
B2

i
BI 15V
1111+
6V

m
Fig. 4-19. Dc "impedance" converter.
 3N187
O
R5 500
NEG DC
OUTPUT
0- (0 -2.7V)
Parts POS DC
R1 0.47-5M 0+ OUTPUT
R2 500 (0--0.9V)
+o 1K WW R3 Ra
R3
WW 0-±- COMMON
2K WW
DC INPUT 0.47 R4 2K WW _.41K
R POSITIVE NEGATIVE
(0-1.5V) -5M R5 500
BALANCE BALANCE
Bi 1.5V
-0 B2 6V R2 500 SPST SPST S PST
B3 6V, 3.2 mA
S2S3 3PST \ON-OFF S3
\
O 3N187
S21 6V
Bi 1.5V B2 6V
B3

T T

ili
Ui Fig. 4-20. Dual -polarity output adapter.
 116
This amplifier. simple a of circuits input and output the
between connected is feedback, positive for correctly phased
transformer, coupling a words, other In feedback. inductive
for coil tickler a employs oscillators simplest the of One
OSCILLATOR AUDIO -TYPE TICKLER
1. Chapter in
given precautions and hints the carefully read chapter, this in
circuit any of operation or wiring the undertaking Before
a of instead used be may supply power filtered well a battery.
however,
supply; DC for shown are batteries simplicity, For
25V. are capacitors electrolytic
are Resistors henrys. in inductances and ohms, in and 1/2W,
resistances
picofarads, in are capacitances text, the in or diagram the
on otherwise indicated unless circuits,
the of each In voltage.
operating DC and output, signal frequency, of requirements
individual for experimenter the by modified readily
be may they or is, as used be may arrangements These IF. and
RF. AF. circuits: oscillator selected 16
offers chapter This
circuits. MOSFET
in needed not are circuits oscillator necessary
are which compromises the of some bipolar in
Moreover, oscillation.
vigorous in results usually MOSFET the of transconductance
high the Also, oscillator. an in circuit tuned the of
loading negligible only cause will tube, vacuum the like device,
this that insures MOSFET the of impedance input high The
Oscillators
5 Chapter
arrangement is also called an Armstrong oscillator. Figure 5-1
shows the circuit.
Here, transformer T is any convenient, miniature,
transistor -type unit; its turns ratio (primary to secondary)
should be 2:1. The primary winding of the transformer is tuned
by capacitor CI to the desired operating frequency. This may
be done experimentally, increasing CI to lower the frequency,
and vice versa; or the selected winding may be measured for
inductance, and the required capacitance calculated as
follows:
1
C1 = (Eq. 5-1)

where CI is in farads, fin hertz, and L in henrys.

Thus, the primary winding of an Argonne AR -109 transformer
has an inductance of 1.4H, and a capacitance of 0.018 p.F will
tune it to 1000 Hz. It must be remembered that the transformer
windings have internal capacitance, and the upper frequency 11

limit will be determined by this capacitance and the

inductance of the winding.
Potentiometer R, permits close adjustment of the
feedback voltage reaching gate 1 of the MOSFET. Too little
voltage will not support oscillation, and too high a voltage will
distort the signal waveform. This potentiometer is adjusted
with the aid of an oscilloscope connected temporarily to the
output terminals to monitor the waveform.
Gate 2 of the MOSFET is returned to the source. Gate 1
receives its negative bias from the voltage drop resulting from
the flow of drain current through source resistor R2. Current
drain from the 6V supply is approximately 1 mA, but this may
vary somewhat with individual MOSFETS. The open -circuit
output voltage is approximately 2.7V RMS.
When setting up the circuit for the first time, if oscillation
is not obtained, reverse either the primary or the secondary
connections of transformer T. The color coding shown in Fig.
5-1 is correct for positive feedback.
HARTLEY AUDIO OSCILLATOR
In the Hartley oscillator circuit, a tapped tank coil is used;
one part of this coil serves as the "input" winding, and the
other part as the feedback winding. Figure 5-2 shows the
circuit of a Hartley audio oscillator.
In this arrangement, the upper half of the centertapped
transformer T serves as the input winding, applying a signal
between gate 1 and source of the MOSFET; and the lower half
serves as the feedback winding, through which the AC'
component of drain current flows from source to ground.

117
CO C3

0.1 /IF
3N187 Parts

0 R1 50K
IR2 2K
C2 50µF
C3 0.1 µF
B 6V 1 mA
S SPST
O 3N187
SEE TEXT FOR C1 AND T
BLUE jT GREEN AF OUTPUT
(2.7V RMS)

OOK O
ciT RED g c FEEDBACK
YELLOW ADJUST
SON-OFF
R9 2K G2 50 µF
6V

Fig. 5-1. Tickler -type audio oscillator.

 Parts
R1 270
R2 1M
R3 470K
R4 1.8M
R5 1K
50 p.F
B 6V, 2 mA 3N187
S SPST
O 3N187
SEE TEXT FOR C1 AND T R5 1K

AF OUTPUT

R4
R2.4'41M VVN..
OSC 1 8M ON -
R3 470K s \OFF

B
6V
2 mA
T

CO
Fig. 5-2. Hartley audio oscillator.
 120
the by tuned is and inductor frequency the
as, serves T transformer of winding-determining
One conventional: is here
shown circuit The 5-3). Fig. in C4 and C3 see ( capacitor tuning
split a require does it However, inductor. untapped an uses
it that advantage the has circuit oscillator Colpitts The
OSCILLATOR AUDIO COLPITTS
MOSFETS. individual with somewhat vary may this but
mA,
2 approximately is supply 6V the from drain Current output.
maximum and waveform best for adjustment some
may R4 -R4.R3 divider voltage from bias positive its require
receives
2 gate and R,; resistor source bypassed through current
drain of flow the from resulting drop voltage the from bias
negative its receives MOSFET the of 1 gate circuit, this In
RMS. 1.4V approximately is
circuit) (open voltage
output AF the and µ,F, 0.113 = C, for Hz 400 is frequency
the transformer, -109AR Argonne an With used. transformer
the of characteristics the upon depend will amplitude
actual its and transformer, the of winding primary the by
circuit the of out coupled inductively is signal output The
waveform. the monitor to terminals output the to temporarily
connected oscilloscope an of aid the with adjusted is
potentiometer This waveform. output distorted a produce will
voltage a high too whereas oscillation, produce not will voltage
a low too MOSFET; the of 1 gate reaching voltage
feedback the
of adjustment close permits R2 Potentiometer transformer.
the to connections all carefully check obtained, not is
oscillation if time, first the for circuit the up setting When
frequency. corresponding
the observing and C, capacitor disconnecting by determined
easily be may frequency This winding. the of inductance
the and capacitance this by determined be will limit
frequency upper the and capacitance, internal have windings
transformer the that remembered be must It µF. 0.352
is operation Hz 400 for required capacitance the inductance,
0.45H shows that winding secondary a with Thus, 5-1. Eq. of
means by calculated capacitance required the and
measured
be may winding the of inductance the or versa; vice and
frequency, the lower to C, increasing by experimentally done
be may This frequency. operating desired the to C, capacitor
by tuned is winding secondary The used. be can winding
secondary -tappedcenter a and ratio turns 1:1 or 2:1 a -having
transformer -typetransistor miniature, convenient, Any
half.
former the into voltage feedback the couples inductively half
latter the autotransformer, an is winding tapped the Because
 C2

I(
0.01 µF T

3N187
0

1K Cs

IE
0.01 ;IF
///
Parts
R1 1K
R2 R3 0 SC R2 27K
4A, R5 1M R3 25K
K 25K 270
R4
ON - F2F5 R5 5K
R6 1M
GI 50µF
R5 5K G2 0.01 µF
6V Cs 0.01 µF
1 6 mA R4 270 1.7.50µF B 6V, 1.6 mA
S SPST
O 3N'87
SEE TEXT FOR C3, C4, and T

Fig. 5-3. Colpitts audio oscillator.

 122
tuned this up setting in procedure best The CI. capacitance
and L inductance by determined is frequency The
R. potentiometer -controloscillation of
adjustment close and inductor -Qhigh a of use by considerably
purified be may waveform signal the that and used,
be can (L-C,) circuit tuned untapped grounded, single, a that
advantage the has oscillator This oscillation. for necessary
feedback the provide to C4) ( capacitor a through stage first
the of input the to back coupled stage last the of output the with
amplifier audio -stage 2 a of essentially consists arrangement
This oscillator. Franklin a of circuit the shows 5-4 Figure
OSCILLATOR AUDIO FRANKLIN
MOSFETS. individual
with somewhat vary may this but mA, 1.6 approximately
is supply 6V the from drain Current oscillation. of strength the
controls network -divider voltage this in R3 rheostat
this of control providing By -R5. -R3 R2 divider voltage,
voltage
from bias positive its and R4, resistor source through current
drain the from resulting drop voltage the from bias negative
its receives MOSFET the of 1 gate circuit, Colpitts the In
RMS. 1V
approximately is voltage output -circuit open the transformer,
this With Hz. 500 to it tune will C4 and C3 for each /IF 0.145
of capacitance a and 1.4H, of inductance an
has
-109AR Argonne an of winding primary thetransformer
Thus,
henrys. in L and hertz, fin farads, in is C where
2 4
39.5fL = =
5-2) (Eq. C C3
2
follows: as calculated C4 and C3 for value
required the and measured, be may T transformer of winding
primary the of inductance the Or versa. vice and frequency,
the lower to pairs) identical in ( C4 and C3 increasing
by frequency operating desired the to experimentally adjusted
be may circuit The used. be can transformer -type transistor
miniature, convenient, Any C4. or C3 either
to equal is T transformer of winding primary of one-half
the tuning
capacitance equivalent the identical, are C4 and C3 When
winding. transformer the of
tapped is here capacitance tuning the that except instead
section),
preceding see ( circuit Hartley the of that to similar somewhat
is circuit the of Operation electrode. 1 gate to MOSFET
the the
of electrode drain the short-circuiting from
keep to serving only, units blocking are C5 and transformer the
C2 Capacitors
(
capacitances). identical C4 C3- combination -capacitorseries
 0 005 p.F

3N187
0.1 µF 3N187
01 01 F
02

C2
R10

O.1µF 15K 470K

-Of 10K
F16 OSC
B 12V, 1 mA
R6 470K C2 0.1 µF
R 1M
R7 470K C3 50µF
L
R8 3.3M C4 0.005µF AF OUTPUT
Rg 3300 C5 0 1µF (2V RMS)
R10 10K C6 50µF
3.3M 0
-OFF
s\A
+5
R9 470K C31- 50µF R7 470K +
R4 3300 C1._
R9 3300
B -1712V
MA

/1/ Fig. 5-4. Franklin audio oscillator.

 124
the prune to then and capacitors equal available select to
easiest be will it general, In Hz. 649 is 100011) = R5 = R4 = R3
and auF, 0.1 = C3 = C2 = C, where ( 5-5 Fig. in circuit
the of frequency the that seen easily is it this From
farads. in C and ohms, in R hertz, in is f where (15.4RC), 1/ = f
is circuit) the of frequency oscillation the accordingly and (
network the of frequency The equal. are resistors three all and
equal, are capacitors three all network, -shift phase the In
equipment.
-tube vacuum in used often is and waveform excellent
and compactness its for noted is oscillator -shift phase
The network.) full the for 180° of total a for 60°, phase the shifts
leg (Each 1. gate and Q MOSFET of drain the between path
feedback the in oscillation for shift phase necessary the obtain
to R5) C2-C3-R3-1i,- C1- ( network RC -leg 3 a employing
oscillator audio -tunedRC an of circuit the shows 5-5 Fgure
OSCILLATOR AUDIO -SHIFT PHASE
MOSFETS. individual with somewhat vary
may this but mA, 1 approximately is B source 12V the from
drain Current RMS. 2V approximately is output AF Maximum
terminals. those to temporarily connected oscilloscope
an of aid the with done be should This terminals. output
the at voltage -wave sine best the afford will that amplitude
feedback the for set be must R19 pot control Oscillation
MOSFETS. individual with adjustment some
need may networks -divider voltage the in R9 and R3 resistors
waveform, best and output AF maximum For Q2). for R7-R8
and Q,, MOSFET for (R2-R, dividers voltage from bias positive
their receive electrodes -2gate the and Q2), for R9 and (21,
MOSFET for R4 ( resistors source through current drain of flow
the from resulting drop voltage the from bias negative their
receive MOSFETS the of electrodes -1 gate the 5-4, Fig. In
) desired.
if frequency, exact for set be can and range, narrow a over
adjustable is -C15 VI The ( kHz. 1 approximately is frequency
resulting The µF. 0.0047 is C, and -C15), VI Transformer
United ( inductor 5.4H -Q,high a is L circuit author's the In
henrys. in L and hertz, fin farads, in is C, where
5-3) (Eq. 39.5f2L = C,
1
CI: of value required the determine
to employed be may formula following The capacitance.
the prune then and inductor convenient a obtain to is circuit
 Cy C2 O3

)1 )1. )1
0 1 µF 0.1µF 0.1µF
R3 1K R5 1K

Rj1K /f/
Parts
0.1 µF
R1 1M R 1K
R2 390
R3 1K 7 10K
R4 1K
OSC
R5 1K
R6 1K
R7 10K AF OUTPUT
Gi 0.1 µF (1V RMS)
C2 0.1 µF
RI 1M ON-OFF
C3 0.1 µF sj
C4 50µF
C5 0.1 µF
B 12V, 2 mA B_=. 12V
S SPST 2 mA
3N187
T
N
01 Fig. 5-5. Phase -shift audio oscillator.
 126
waveform.
best for MOSFETS individual with adjustment some need
may R9 and R, resistances dividers, these In Q2). for -R10 R9
Q1, for (R4-R6 divider voltage a from bias -2 gate positive
its and Q2), for R11 and Q,, for (R5 resistor source a through
current drain of flow the from resulting drop voltage the
from bias -1 gate negative its receives MOSFETs the of Each
terminals. output the to temporarily connected
oscilloscope an with viewed as waveform, sine best the
for set R9 potentiometer -adjustwaveform the and oscillation,
for set be must R, rheostat -adjust oscillation The operation.
Hz 1000 give to each 31,8470 to pruned be may resistors
The Hz. 1061 of frequency operating an give 5-6 Fig. in
resistors and capacitors bridge The Q,. of 1 gate and Q2 MOSFET
of drain the between loop feedback the in bridge Wien the with
amplifier -coupledRC -stage 2 a is circuit the of basis The
circuit. -bridgeWien the employ generators
signal audio many fact, In usefulness. considerable of
oscillator -frequency variable a obtain can you simultaneously,
capacitance the or resistance the either varying By
farads. in C2 and ohms, in R1 hertz, in is f where
5-5) Eq. (
6.28R,C2 -f
1
formula the by
R3, = R, and C2 = C, which in C,-C2-R1-R3, network RC
the by determined is frequency operating The tuning. simple
comparatively its and output -wave sine excellent its for noted
is circuit -tunedRC This circuit. oscillator audio -bridgeWien
popular the of version MOSFET a shows 5-6 Figure
OSCILLATOR AUDIO WIEN-BRIDGE
MOSFETs. individual with somewhat
vary may this but mA, 2 approximately is source 12V the
from drain Current RMS. 1V approximatey is terminals output
the at voltage Signal starting. fastest for set be to circuit
the allows R, control oscillation the of Adjustment type).
its for value typical the than higher (i.e., transconductance
high have should MOSFET the results, best For
15.4fC
5-4) (Eq. -R
equation: following the of
aid the with done be may This values. required to resistances
 Fli 30K Rg 0.5M C5 10 AF ON -OFF
R2 15K R10 470K 12V. 5 mA 2V
i:
5 mA
PartsB R3
R4
30K
470K
R11
R12
330
15K
S
Qi
SPST
3N187
T
R2 15K R5 330 CI 0.005µF 3N187 R12 15K
/ /
02
R8 3.3M 02 0.005µF
R7 1K 03 0.1 µF
R1 R8 3.3M 04 10µF
30K
03 10µF 10µF
3N187
C17-70 005 ,LLF 3N187
Qt
0 1 /IF
02

0.5M

AF OUTPUT
1K
(2V RMS)
OSC WAVEFORM
0.005
Fl ADJUST 0
ADJUST
^µF R6 R8
R3 30K
3.3M 3.3M
R4 470K R5 330
R10 470K R11 330

Fig. 5-6. Wien -bridge audio oscillator

 ji
128
another to changed be easily may frequency The ohms.
in R, and farads, in C2 hertz, in is f where , 2irR,C2) ( 1/ = f
and R4, = R C3, = C2 Thus, components. coupling
capacitance and resistance the upon depends frequency
operating the circuit, tube corresponding the in As
amplitude. -peak-topeak 4V of waveform square
approximately an is output the 5-8, Fig. in given constants
circuit the With multivibrator. -tubevacuum -coupledplate
the to equivalent is circuit This multivibrator. -coupleddrain
conventional a of circuit the shows 5-8 Figure
MULTIVIBRATOR
MOSFETS. individual with somewhat vary may this
but mA, 40 approximately is supply 6V the from drain Current
hertz. in directly read to calibrated dial a with provided be
may potentiometer control frequency The desired. is voltage
adjustable an if terminals these across connected be may 10K)
e.g., ( potentiometer control gain A RMS. 2.5V approximately
is terminals output AF the at amplitude signal output The
reset.) R,7is unless
versa, vice and end, -frequency high the at disappear will
it control, frequency the of end -frequency low the at obtained
(
is oscillation When setting. distant a to moved is R5-R1,
if oscillation of restoration for reset be to need then may R,7
Potentiometer R5-R11. control frequency the of setting any at
oscillation for set is Fla potentiometer control Oscillation
discussion.) further for 4, Chapter in Shifter,
Phase Variable Continuously section the (See stage. auxiliary
Q4 the in rotation phase undergone having after oscillation),
accordingly, (and, feedback positive for phase correct the
in C,) capacitor via ( stage input the to back fed is -Q3 -Q2 (21
amplifier -stage 3 the of output The 90°. of shift total a provides
which of each C3-R11, and C2-R5 networks, -shift phase
two with accomplished is tuning arrangement, this In
R5-R11. potentiometer
dual the of rotation one in kHz 10 to Hz 200 range the covers
circuit This output. -wavesine excellent having oscillator
audio -tunedRC another of circuit the shows 5-7 Figure
OSCILLATOR AUDIO VILLARD
MOSFETs. individual with somewhat vary may this
but mA, 5 approximately is supply 12V the from drain -Current
adjustment. voltage output for potentiometer a with replaced
be may R11 resistor desired, If RI,. resistor across obtained
be may impedance, low at voltage, output lower Somewhat
RMS. 2V approximately is amplitude signal output The
V'
 Parts
R1 1M R6 1.5M R12 470K 470
Ri5 A21 10K C4 0 01 µF 02 3N187
R2 470K R7 470K R13 3.3M 10K ON-OFF
R16 C1 0.01 /IF C5 0.005µF Q3 3N187 qv
R3 1.5M R8 1000 R14 470K R17 50K C2 0.002µF C.6 0.01 µF 04 3N187 B=-40
R4 1000
Rg 1000 R9 1000 R18 3.3M B 10K
C3 0.002µF 6V. 40 mA T_ mA
R5,11 DUAL R10 1000 R16
Rig 470K R10 1000 S SPST 10K C
500K C / /
R20 470 Q1 3N187
3N187 3N187 IE-3 3N187
° 0.002 µF
0122Q1 02 3N187 0.01 /IF
03

nni

05
0 005 /IF
AF OUTPUT
(2.5V RMS)
0

3 3M
R2 470K R4 1000 R8 1000 R15 470 R1Q 470K R20
R7 470K R14 470K

114 MUST MATCH Rg, AND Fig MUST MATCH R10

1\3
C0 Fig. 5-7. Vil lard oscillator.
O SON- OFF

B-16V
-
-4mA
R3 1K T R5 1K

C3

)1
02 0.002 µF 0.1 I.LF
Parts
I( 3N187 R1 240K
0.002 µF
R2 330
R3 1K
2( R4 240K
R5 1K
R6 330 OUTPUT
Ci 1µF (4V P -P)
C2 0.002µF
C3 0.002µF
R4 240K
240K C4 1µF
C411- C5 0.1 p,F
1 p.F :1 µF B 6V, 4 mA
R6 330 S SPST
3N187
02 3N187

iii
Fig. 5-8. Multivibrator.
desired value by changing the resistances and capacitances
while preserving the relationships given above.
The multivibrator is essentially a positive -feedback
amplifier in which the drain of each stage feeds gate 1 of the
other stage. The gate -2 electrodes are returned to the sources.
The output wave will have best symmetry when the two
MOSFETs are closely matched; or, lacking this, when either R2
or R6 is adjusted for matching of operating points.
Current drain from the 6V supply is approximately 4 mA,
but this may vary somewhat with individual MOSFETs.

SUN -POWERED AUDIO OSCILLATOR

Figure 5-9 shows the circuit of a tickler -type audio
oscillator of the same type as that described earlier, but with
the battery replaced by two silicon solar cells PC, and PC2. In
bright sunlight, these two cells (International Rectifier S7M-C)
deliver a total output of 6V and will adequately power the
oscillator.
The output signal amplitude ( open -circuit) is
approximately 2.7V RMS; if transformer T, recommended in
the earlier circuit at the beginning of the chapter, is employed
with a C, capacitance of 0.018 µ,F, the frequency is
approximately 1000 Hz.
See the earlier section for a description of the amplifier
circuit alone.
SELF-EXCITED RF TICKLER -COIL OSCILLATOR
In Fig. 5-10, an Armstrong -type radio -frequency oscillator,
oscillation is obtained with a tickler coil, LI, which feeds
energy from the output of the circuit into the input tuned
circuit L2-C2. The operating frequency is determined by the
values of L2 and C2 according to
1
f= 6.28V L2C.2 (Eq. 5-6)

where f is in hertz, C2 in farads, and L2 in henrys.

It is helpful to know also that, from rewriting Eq. 5-6,
L2 = 1/39.5 f2C2 and C2 = 1/39.5 f12. When C2 is a 365 pF
variable capacitor, coils may be wound as shown in Table 5-1
to cover the frequency range of 440 kHz to 30 MHz in five
bands.
In this circuit, MOSFET Q receives its negative gate -1 bias
from the voltage resulting from the flow of drain current
through source resistor R3, and its positive gate -2 bias from -
voltage divider R1-R2. Resistance R, of this divider may

131
 0.1 µF
3N187
BLUE GREEN
O
10
C1.-'. 50K
ppb
Re 4
FEEDBACK
RED YELLOW
ADJUST

ON -OFF AF OUTPUT
0 (2.7V RMS)
Parts
C2 R1 50K O
B2 2K
±1(
PC1 S7M-C 1000µF C2 1000 µF,12V
12V C3 0.1 µF
C4 25µF
PC1 S7M-C R 2K C4 25µF
PG2 S7M-C
S7M-C S SPST
O 3N187
SEE TEXT FOR C1 AND T

/1/ Fig. 5-9. Sun -powered audio oscillator.

111
 C5

Parts
0 005 /..t.F
R1 150K C5 0.005µF 3N187
R2 51K B 6V, 1 mA
R3 2K S SPST
C1 0.002µF 0 3N187
C3 0.002µF SEE TEXT FOR Li L2. AND C2
CAI 0 01 ALF
L2

L1
c TUNING
O
RF OUTPUT
(2V RMS)

0
150K

SAN-OFF
0 002 /IF C3.--,0 002 /IF
B - 6V R2 51K R3 2K
1
C4001AF
1 mA

CA)
Fig. 5-10. Self-excited RF oscillator (tickler type).
 134
coils own his wind and CI for capacitor variable pF 365
a employ may he or coils; these for value C1 recommended the
supply and range frequency desired a for coils manufactured
employ may reader the 5-11, Fig. in circuit the For
Eq. to according5-6.
C capacitor tuning the of capacitance the and L inductance
whole the by determined is 5-11) Fig. see ( circuit a such
of frequency operating The coil. (tank) -circuit tuned the as
portion other the and coil, (tickler) feedback a as act to portion
one allows inductor this on tap a inductor; -circuit tuned
one only requires circuit oscillator Hartley The
OSCILLATOR HARTLEY RF SELF-EXCITED
MOSFETS. individual
with somewhat vary may this but mA, 1 approximately
is supply 6V the from drain Current RMS. 2V approximately
is amplitude signal output The output. RF maximum
for MOSFET individual an with adjustment some require
pF.) 365 = C2 capacitance "(Tuning
in. 1/2 of
length winding to Space diameter. in in. 1/2
airwound wire enameled 22 No. turns 51/2 L2
L2.
of top from 1/16,in. Mount diameter. in in. 1/2 -
MHz 30 18
airwound wire enameled 22 No. turns 4 Li E Band
form. diameter in. 1 on
closewound wire enameled 22 No. turns 10 L2
L2. of
top from 1/16in. Space L2. as form same on MHz 8-20
closewound wire enameled 22 No. turns 4 L, D Band
form. diameter in. 1 on
closewound wire enameled 26 No. turns 27 L2
L2. of
top from Vi6in Space L2. as form same on MHz 3.4-9
closewound wire enameled 26 No. turns 8 Li C Band
form. diameter in. 1 on
closewound wire enameled 32 No. turns 65 L2
L2. of
top from 1/16in. Space L2. as form same on MHz 1-3.5
closewound wire enameled 32 No. turns 15 L, B Band
form. diameter in. 1 on
closewound wire enameled 32 No. turns 187 L2
L2. of
top from 1/16in. Space L2. as form same on kHz 440-1200
closewound wire enameled 32 No. turns 45 L, A Band
Oscillator.* RF -TypeTickler for Data -Winding Coil 5-1. Table
 C5

3N187 Parts
R1 270 0.002µF
R2 1M
R3 470K
0.002 p.F
R4 1.8M
Ci,-* - TUNING
C2 0.01 /IF
R1
C3 0.002µF
C4 0.005µF
C5 0.002µFRFC... 2.5 mH
C2 C6 0.005 p. F 4tiod
B 7.5V, 2 mA
RFC 2.5 mH RF OUTPUT
0.01 p.F S SPST (2.8V RMS)
O 3N187
SEE TEXT FOR 0
L AND C1
R4

1.8M
ON -OFF
C4-0 005 µFF C6 -0 005
R 470K
P'F
- 7 5V
B-2 mA

01 Fig. 5-11. Self-excited RF oscillator (Hartley type).

 136
current drain of flow the from resulting drop voltage the from
bias -1 gate negative its receives Q MOSFET circuit, this In
limits. band exact the for preset
be can and -tuned slug are coils These MHz. 25 to MHz 1.1 from
extending shown, bands frequency four the cover to capacitor
variable pF 100 dual a with used be may which coils RF
commercial lists 5-3 Table series. in C7 and C. of capacitance
equivalent the and L, inductance of terms in circuit
Colpitts the of frequency the calculating for instructions
for 5-2 Eq. and Oscillator Audio Colpitts section the
to back Refer L2. coil -impedancelow of means by circuit the
of out coupled is energy -frequency Radio frequency. desired
the to L inductor tunes (C6-C7) capacitor variable dual A
,
C6-C7). ( leg capacitor tapped a but ) L, ( inductor
untapped an employs earlier, described circuit oscillator
audio Colpitts the like circuit, This oscillator. -frequency radio
self-excited Colpitts a of circuit the shows 5-12 Figure
OSCILLATOR COLPITTS RF SELF-EXCITED
MOSFETS. individual with somewhat vary may this but mA, 2
approximately is supply 7.5V the from drain Current RMS. 2.8V
approximately is voltage output RF the of amplitude The
voltage. output RF maximum
for MOSFET individual an with adjustment some require may
divider this in R, Resistance R3-R4. divider voltage from bias
-2 gate positive its and R1, resistor source RF-bypassed through
current drain of flow the from resulting drop voltage the from
bias -1 gate negative its receives Q MOSFET circuit, this In
bands. five in MHz 30 to kHz 440 of coverage frequency
a give to 5-2, Table in given instructions to according
pF.) ci365 capacitance (Tuning
end. ground from turn second Tap in. 1/2 of
length winding to spaced and diameter in in. 1/2 MHz 18-30
airwound wire enameled 22 No. turns 51/2 E Band
end. ground
from turn second Tap form. diameter in. 1 on MHz 8-20
closewound wire enameled 22 No. turns 10 D Band
end. ground
from turn seventh Tap form. diameter in. 1 on MHz 3.4-9
closewound wire enameled 26 No. turns 27 C Band
end. ground
from turn 16th Tap form. in.diameter 1 on MHz 1-3.5
closewound wire enameled 32 No. turns 65 B Band
end. ground
from turn 45th Tap form. diameter in. 1 on kHz 440-1200
closewound wire enameled 32 No. turns 187 A Band
Oscillator.* RF Hartley for Data -Winding Coil 5-2. Table
 Parts
Ri 27K C4 100 pF
R2 25K C5 100 pF L2
R3 270 B 9V, 2 mA
1M 3N187 RF OUTPUT
R4 RFC 2.5 mH
R5 5K S SPST
C1 0.002µF 0 3N187
C2 0.01 µF SEE TEXT FOR
C3 0.01µF L1, L2, AND Cg-C7
100 pF /II
R1
R211,0SC
27K 25K
S
ON-OFF

C17-70.002 µF R4 1M R5 5K G3.-,0 .01 p,F

B 9V
2 mA Ra 270 C2 0.01 µF

///
Fig. 5-12. Self-excited RF oscillator (Colpitts type)
 138
from resulting drop voltage the from bias -1 gate negative its
receives MOSFET The MOSFETS. individual with somewhat vary
may this but mA, 2 approximately is supply 12V the from drain
Current RMS. 3V approximately is voltage output RF The cl
bands. five in MHz 34 to kHz 680 range frequency the covering
coils for 5-4 Table in found be will data C3, for employed
is capacitor variable pF 100 a if Or, discussion. accompanying
its and 5-6 Eq. of aid the with determined be may combination
C3 and L required The C,. capacitor through circuit tuned
the of top the from taken is voltage output RF and frequency,
crystal the at resonate to tuned is -C3 L circuit resonant
The conventional. is circuit the respects, other all In
oscillation.
sustain to small too is capacitance internal the MOSFETs most
in since coupling, feedback for required is capacitance This
1. gate and drain between externally connected C1, capacitor
be to apt is component strange only The transistor. bipolar
or tube vacuum the replaces MOSFET the which in oscillator
crystal conventional a of circuit the shows 5-13 Figure
OSCILLATOR CRYSTAL STANDARD
mosFETs. individual with somewhat vary may this but mA,
2 approximately is supply 9V the from drain Current MOSFET.
the of electrode drain the and choke -frequency radio the of
junction the from capacitor) fixed pF 100 a (through output the
taking and L2 discarding by obtained be may voltage Higher
RMS. 0.25V of order the of be will voltage output RF The
voltage. output RF maximum for set is control oscillation
the network, divider this In R3. R2- R1- divider voltage
from bias -2 gate positive its and R3, resistor source through
pF) 100 Dual = C6-C7 capacitance (Tuning
L,. to
close wound wire enameled 24 No. turn 1 L2
MHz 10-25
p.H). -1.80 (1.08 20A156RBI No. Miller L, D Band
L. to
close wound wire enameled 24 No. turns 2 1-2
MHz 5-11.5
µ1-4). (16.2-26.4 20A225RBI No. Miller Li C Band
L,. to
close wound wire enameled 24 No. turns 5 L2
MHz -5 2.5
p.H). -120 (88.5 20A104RBI No. Miller LI B Band
L. to
close wound wire enameled 24 No. turns 5 L2
MHz 1.1-2.5
µH). -564 (365 20A474RBI No. Miller LI A Band
Oscillator.' RF Colpitts for Data Coil 5-3. Table
 C4
Il
25 pi=
0.002µF
Parts
R1 470K
3N187 R2 3.9K
0 C1 25 pF
C2 0.01 pc
C4 0.002
C5 0.002µF
B 12V, 2 mA
RFC 2,5 m1 -I
S SPST RF OUTPUT
3N187 (3V RMS)
SEE TEXT FOR C3 AND L
S 0
izniza XTAL
ON - OFF
0-
RI 470K 3 9K 0.01 ;IF - 12V
R2 B
2 mA
T
/II
Fig. 5-13. Standard crystal oscillator.
 140
voltage.
output RF maximum for adjustment some require may divider
this in R, resistor MOSFET, individual an With R,-R3. divider
voltage from bias positive -2gate its and R4, resistor source
through current drain of flow the from resulting drop voltage
the from bias negative -1 gate its receives MOSFET The
bands five
in MHz 30 to kHz 440 from extending range the over oscillator
the of tuning permit will 5-1 Table in described coils the C,, for
used is capacitor variable pF 365 a If RMS. 2V approximately
is -circuit) open ( amplitude signal output The
oscillator.
the power adequately will and 6V of output total a deliver
S7M-C) Rectifier (International cells two these sunlight, bright
In PC2. and PC, cells solar silicon two by replaced battery
the with but previously, described that as type same the of
oscillator RF -typetickler a of circuit the shows 5-15 Figure
OSCILLATOR RF -POWERED SUN
R2. resistor
source through current drain of flow the from resulting drop
voltage the from bias -1 gate negative its receives MOSFET The
MOSFETS. individual with somewhat vary may this but mA,
1.6 approximately is supply 6V the from drain Current RMS.
3.2V approximately is voltage output RF -circuit open The
harmonic. desired the at than rather frequency
fundamental their at circuit this in oscillate will crystals these
since crystals, overtone for however, useful, not is It circuit.
tuned no requires it that advantage the has circuit Pierce The
5-14.Fig. in shown is oscillator crystal Pierce MOSFET A
OSCILLATOR CRYSTAL PIERCE
source. the to externally returned
is 2 Gate R2. resistor source through current drain of flow the
pF.) 100 = C3 capacitance (Tuning
in. 1/4 of length winding to Space form. eter MHz 15-34
diam in. 1 on wire enameled 22 No. turns 51/2 E Band
in. 1/2 of length winding to Space form. eter MHz 8-18
1
diam- in. on wire enameled 22 No. turns 12 D Band
in. Y2 of length winding to Space form.. eter MHz 8.6 - 3.8
diam- in. 1 on wire enameled 26 No. turns 25 C Band
form. diameter in. 1 on MHz 1.8-4
closewound wire enameled 32 No. turns 57 B Band
form. diameter in. 1 on MHz -1.5 kHz 680
closewound wire enameled 36 No. turns 181 A Band
Oscillator.' Crystal Standard for Data -Winding Coil 5-4. Table
 XTAL C2

01
0.005 ,LLF

Parts
R1 240K
330 RFC 2.5 mH
R2
R3 1K
Ci 0 1µF
C2 0 005 µF
B 6V, 1.6 mA
RFC 2.5 mH 1K
R,3
S SPST
Q 3N187 RF OUTPUT
(3.2V RMS)
0
ON -OFF
R1 240K

0 1 µF 6V
B
T1 6 mA

/1/
Fig. 5-14. Pierce crystal oscillator.
 Cs

IE
0.005 µF
3N187

C2
L2

0 0 002 µF
0 C1 TUNING
L1 0 RFC 2.5 mH
RF OUTPUT
(2V RMS)
ON-OFF R1
0
RED 150K
PC1 S7M-C
BLACK

03 4 0 01 µF
R2 240K 51K
RED
S7M-C
BLACK

Parts
150K C2 0.002µF PC1 S7M-C O. 3N187
/-7 R2 240K G3 0.002µF PC2 S7M-C SEE TEXT FOR
A3 51K C4 0.01µF RFC 2.5 mH L2. AND Ci
R4 2K C5 0.005µF S SPST

Fig. 5-15. Sun -powered RF oscillator.

..iiii0111111111111111111111&.
 Cs

0 0 7 !, F

011
C2
T
r
1g" 002µF
Parts
SEC 11 C; 1 jR3 470K R1 1K
:PRI
..E Ti R2 2.2M
R3 470K
/ I R4 470K
IF OUT PUT
R5 270
C110 002 K (3V RMS)
C1 0.002µF
C2 0.02µF O
R2
"VW C3 0.01 µF
) 2.2M C4 0.01 µF
S ON OFF C5 0.02µF
B 9V. 2 mA
C31 R4
S SPST C
0.010.LF O 3N187
001 /IF
9V 470K R5 270
B=-_. 2 mA

///
Fig. 5-16. Self-excited IF oscillator.
 144
half. other the of circuit coil-capacitor
the from taken be can output the and transformer,
IF an of one-half by supplied be can C3 capacitor variable and L
inductor 5-13), Fig. ( used is circuit standard the If frequency.
intermediate desired the at oscillating crystal a insert
to only necessary is it 5-14), (Fig. chosen is circuit Pierce
the If used. be can 5-14) and 5-13 Fig. see ( earlier described
circuits crystal the of Either used. be may oscillator crystal
a section, preceding the in described oscillator IF self-excited
the by afforded that than required is stability better If
OSCILLATORS IF -CONTROLLEDCRYSTAL
MOSFETS. individual with somewhat vary may this but
mA, 2 approximately is supply 9V the from drain Current RMS.
3V approximately is voltage output IF -circuitopen The
coils. transformer the of one to connections
the reverse tested, first is it when oscillate not does circuit the
if feedback; positive for polarity correct in connected be must
transformer The MHz. 10.7 or kHz, 1500 kHz, 455 example,
interest-for of frequency intermediate the for chosen is latter
The T. transformer IF by supplied coils two the with oscillator
-typetickler a is This oscillator. -frequencyintermediate
self-excited a of circuit the shows 5-16 Figure
OSCILLATOR IF SELF-EXCITED
 Chapter 6
Test Instruments

The unique characteristics of the MOSFET make it particularly

suitable for applications involving test instruments-
expecially the miniaturized, battery -operated varitey.
Important advantages obtained are negligible loading, reduced
operating current, gow drift, high sensitivity, and small size.
This chapter presents 15 selected instrument circuits.
Several circuits appearing elsewhere in this book and intended
primarily for other applications may also be used in
instrumentation. See, for example, Figs. 2-13 through 2-22, 3-1
through 3-3, 3-12, 4-6, 4-12 through 4-14, 4-16, 4-17, 5-1 through
5-8, 5-10 through 5-14, and 5-16.
In each of the circuits in this chapter, unless indicated
otherwise on the diagram or in the text, capacitances are in
picofarads, resistances in ohms, and inductances in henrys.
Resistors are 1/2W, and electrolytic capacitors are rated at
25V. For simplicity, batteries are shown for DC supply;
however, a well filtered power -line -operated power supply
may be used instead.
Before undertaking the wiring or operation of any circuit
in this chapter, read carefully the hints and precautions given
in Chapter 1.

SINGLE-MOSFET ELECTRONIC DC VOLTMETER

Figure 6-1 shows a simple electronic DC voltmeter circuit
offering an input resistance of 11M, adapted from a circuit by

145
 R1 1M
0) 3N187
-1
TR(5BEj--
R12 390

GROUND) SHIELD!
CLIP
0-100 DC p.A
Parts 05V
R1 1M C 001µF R13
R2 7M -111, 2K WW
R3 2M 015V 2KWW ZERO SET ON -
R4 700K / I CALIBRATION
R5 200K S2
70K
XIFF
R6 O
20K 050V
R7
R8 10K
Rg 1K 1200
4
R10 4700 0 150V R144700
R11 2KWW
390
+9V
R12
B= 5 5mA
R13 2KWW 0500V
R14 1200
C 0.001 AF
B 9V, 5.5 mA
M 0-100 DC AA
S1 SP7T
S2 SPST
O 3N187
Fig. 6-1. Single-mOsFET electronic oc voltmeter.
Siliconix. This arrangement is seen to be similar to the
vacuum -tube counterpart. Seven voltage ranges are employed
between 0.5V full-scale and 500V full-scale.
As in most conventional electronic voltmeters-tube-type
and transistorized-the indicating microammeter is connected
in a bridge circuit of which the internal drain -to -source
resistance of the MOSFET is a part. With zero -signal input to
jack J, the meter is set to zero by balancing this bridge
(potentiometer R13 is the balancing element ) When a DC
.

voltage subsequently is applied at jack J, the bridge

unbalances (since the MOSFET drain resistance changes), and
the meter reads proportionately.
The accuracy of the instrument depends in large part upon
the precision of resistors R, to R8 in the input circuit. Special
close -tolerance instrument resistors must be obtained, or the
odd values must be made up by connecting several lower
values in series.
Initial calibration is straightforward:
(1) With zero voltage at the input probe, close switch S2
and set potentiometer R13 tozero the pointer of meter M ( range
switch S, may be at any setting for this operation).
(2) Set range switch S, to its 1.5V position.
(3) Connect an accurately known 1.5V source to the input
probe and ground clip.
(4) Adjust calibration control R for exact full-scale
deflection of meter M.
(5) Temporarily remove the input voltage and note
whether meter is still zeroed. If it is not, reset R13-
(6) Work back and forth between steps 3, 4, and 5 until a
1.5V input deflects the meter to full scale, and the meter
remains zeroed when the 1.5V input is removed. Potentiometer
Ri, will not need to be reset unless its setting is disturbed or the
instrument is being periodically recalibrated. Zero -set
potentiometer R13 will need to be reset before each period of
use.
The RC filter formed by R9 and C serves to remove any AC
components and hash that enter the input section of the circuit.
The 1M resistor R, in the shielded probe protects the circuit
from hand capacitance.
Current drain from the 9V supply is approximately 5.5 mA,
but this may vary somewhat with individual MOSFETs.

BALANCED ELECTRONIC DC VOLTMETER

The circuit shown in Fig. 6-2, like its tube or transistor
counterpart, requires less zero resetting than a single -ended
circuit does, if a pair of MOSFETs with matched characteristics

147
 Parts

Co R1 5M R6 40K R11 100 B 6V, 1.6 mA

R2 4M R7 5K 1K R13 ZERO SET
R12 S1 SP8T
R3 500K R8 5K Ri3 1K WW S2 SPST 1K WW
R4 400K R9 1K R14 2K M 0-50 DC p.A M
R5 50K R10 1K C 0.001 /IF Q1 3N187
00 5V
- 02 3N187 + R14 CAL
3N187
RiZ5M 2K
Qi
o 1V RANGE
0-50 3N187
R 4M
5V Rg DC iLA
QZ
ON --
1K
R3 500K
C S2
010V
+0
R4 400K
- 0 001
\I1FF

DC INPUT o 50V
/// ///
R5 50K
A10 1K R12 1K
0100V
R6 40K
B
6V
0500V =1 6 mA
R7 5K
o1000V iR11 100

R8 5K

///
Fig. 6-2. Balanced electronic DC voltmeter.
is used. Any drift in MOSFET Q, is balanced out by comparable
drift in Q2; the internal drain circuits of the MOSFETS, in
conjunction with resistors R10, R11, R12, and R13, form a bridge
for this purpose and for the normal operation of the voltmeter.
Indicating microammeter M is the detector in this bridge
circuit. With zero signal at the input terminals. the meter is set
to zero by balancing this bridge (potentiometer R13 is the
balancing element). When a DC voltage subsequently is applied
at the input terminals, the bridge unbalances ( since the drain
resistance changes), and the meter reads proportionately.
The input resistance of the instrument is 10M. Eight
voltage ranges are provided between 0.5V full-scale and 1000V
full-scale. The accuracy of the instrument depends in large
part upon the precision of resistors R, to R8 in the input circuit.
Special close -tolerance instrument resistors having the exact
values shown in Fig. 6-2 must be obtained, or the odd values
must be made up by connecting several lower values in series.
Initial calibration is straightforward:
( 1) With zero voltage at the input terminals, close switch
S2 and set potentiometer R13 to zero the pointer of meter M
( range switch S, may be at any setting for this operation).
(2) Set range switch S, to its 1V position.
( 3) Connect an accurately known DC source of 1V to the
input terminals.
( 4) Adjust calibration control R14 for exact full-scale
deflection of meter M.
( 5) Temporarily remove the input voltage and note
whether or not the meter is still zeroed. If it is not, reset R13.
( 6) Work back and forth between steps 3, 4, and 5 until a 1V
input deflects the meter to full-scale, and the meter remains
zeroed when the 1V input is removed. Rheostat R14 will not
need to be reset unless its setting is disturbed or the
instrument is being periodically recalibrated. Zero set
potentiometer R13 will not need frequent readjustment unless
its setting is accidentally disturbed.
The RC filter formed by R9 and C serves to remove any AC
components and hash that enter the input section of the circuit.
No further filtering or bypassing is required.
Current drain from the 6V supply is approximately 1.6 mA,
but this may vary somewhat with individual MOSFETs.

CENTER -ZERO ELECTRONIC DC VOLTMETER

Figure 6-3 shows an electronic DC voltmeter circuit in
which the indicating meter is initially set to place zero at the
center of the scale. A positive input voltage then will deflect
the meter up from center -scale, whereas a negative voltage

149
 1V
01 0 Parts
0 R1 9M
Si R2 900K
R1 9M RANGE R3 90K
R4 10K
10V R5 1K
R5
R6 50K WW
1K R7 5K WW
R8 47K
C -0 002 AF C 0 002 µF
R2 900K
B 6V, 5 mA
O+ M 0- 5 DCmA
100V St SP4T
DC INPUT O / / SPST
S2
O 3N187
OCOM R8
R3 90K
47K ON -

1000V
S2
O XIFF
Re R7
50K 5KWW
ZERO WW CALIBRATION
V
R4 10K SET
65 mA

BT
Iii
Fig. 6-3. Center -zero electronic DC voltmeter.
will deflect it downscale, and the input leads will not need to be
swapped.
The input resistance of the instrument is IOM on all
ranges. Four voltage ranges are provided between 1V
full-scale and 1000V full-scale. The accuracy of the instrument
depends largely upon the precision of resistors R, to R4 in the
input circuit. Special close -tolerance instrument resistors
having the exact values given in Fig. 6-3 must be obtained, or
the odd values must be made up by connecting several lower
values in series.
The instrument is initially calibrated in the following
manner:
(1) With zero voltage at the input terminals, close switch
S2 and set potentiometer R6 to zero the pointer of meter M
( range switch S, may be at any setting for this operation).
Remember that the zero point is center -scale, i.e., at the 2.5
mA point on the scale of this 5 mA meter.
(2) Set range switch SI to its 1V position.
(3) Connect an accurately known source of +1V to the
input terminals.
(4) Adjust calibration control R, for full upscale deflection
of the meter.
( 5) Reverse the DC source, applying -1V to the input
terminals. The meter should now show full downscale
deflection.
(6) Temporarily remove the input voltage and note
whether or not the meter is still zeroed. If it is not, reset R6.
(7) Work back and forth between steps 3, 4, 5, and 6 until a
+1V input deflects the meter full-scale upward, a -1V input
deflects it full-scale downward, and the meter remains zeroed
when the DC input is removed. Rheostat R, will not need to be
reset unless its setting is accidentally disturbed or the
instrument is being periodically recalibrated. The reader must
draw a special scale for the meter, having zero at the center.
The RC filter formed by R5 and C serves to remove any AC
components and hash that enter the input section of the circuit.
No further filtering or bypassing is required.
Current drain from the 6V supply is approximately 5 mA,
but this may vary somewhat with individual MOSFETS.

CRYSTAL -TYPE FREQUENCY STANDARD

Figure 6-4 shows the circuit of a 100 kHz frequency
standard employing a Pierce crystal oscillator. The advantage
of the Pierce circuit is its freedom from tuning; no
adjustments are needed to start the oscillation-simply plug in
the crystal and close the power switch.

151
 152
type.
tickler the of circuit self-excited a shows 6-5 Figure required.
not is oscillator -controlledcrystal a of accuracy and stability
high very the when oscillator spotting and standard secondary
A
a as use for satisfactory is oscillator kHz 100 self-excited
STANDARD FREQUENCY SELF-EXCITED
MOSFETS. individual
with somewhat vary may this but mA, 1.6 approximately
is B supply 6V the from drain Current RMS. 3V approximately
is terminals output the at amplitude signal The
source. accurate other some
or transmissions wwv against standardizing for
kHz 100 of side
either on cycles few a varied be to frequency the allows which
capacitor -typetrimmer small a is C, arrangement, this In
standard. frequency -type Crystal 6-4. Fig.
3N187 Q
SPST S
mH 25 RFC
mA 1.6 6V. B
pF 25 C3
/AF 1 0 C2
pF 50 C1
1K R3
330 R2
470K R1
Parts
mA T1.6 330 R2
6V
Bi
0.1µF
470K R1
pF 50
S
O
ON-OFF
RMS) (3V
OUTPUT RF
1K F3
mH 25 RFC
kHz 100
3N187 Imo
XTAL
pF 25
03
 C4

0.001 tiF
3N187
Parts
100 kHz IF TRANSFORMER R1 150K
R2 51K
Ti R3 2K
C1 0.005µF
I
lath
alia C2 0.005µF
T C3 0.01 AF
C4 0.001 /IF
B 6V. 1 mA
S SPST
RF OUTPUT
Q 3N187
(2V RMS)

150K

ON -OFF
C1.--770.005 /IF C2 0 005 p.F 51K
R3 2K C 3,-, 0 0 1 AF
B - 6V
lmA

Fig. 6-5. Self-excited frequency standard.

 154
14 is drain current -signal zero The supply. DC 6V a requires
itself, tracer signal the accordingly, and, amplifier The
signals. test strong on deflection full-scale exceeding from
meter the keep to set is R2 Rheostat signal. visual a providing
thus proportionately, meter the deflects and signal output
the rectifies diode The amplifier. the in transformer output the
of winding output the to connected is R2) rheostat wirewound
10K and D2, diode germanium 1N34A M, milliammeter DC 0-1
of composed ( meter -typerectifier a 2, position in is S When
audible. made is signal the and amplifier the of output the
to connected is speaker the 1, position in is S switch When
amplifier. the to probes the connecting for provided is
J jack input Shielded shielded. is also probe This C2. capacitor
-coupling envelope output and R,, resistor load C,, capacitor
input D1, diode demodulator shunt of consists it and circuit,
a through signal modulated a following for type demodulator
a is probe RF The capacitor. series t.LF 0.1 a with cable
shielded and envelope shielded of consists probe AF The
(D2-R2-M). circuit metering a and probes
RF and AF with provided 2), Chapter Amplifier, lc for Input
MOSFET see ( earlier described amplifier audio -output 1/4W
MOSFET-IC combination the of consists arrangement This
mode. either for
provided is impedance input High loudspeaker). ( indication
aural or meter) ( indication visual either provides which
and system, electronic an through signal RF or AF an either
following for tracer signal a of circuit the shows 6-6 Figure
TRACER SIGNAL AF-RF
MOSFETS. individual with somewhat vary may this
but mA, 1 approximately is supply 6V the from drain Current
RMS. 2V approximately is voltage output -circuit Open
output. RF
highest for MOSFET individual an with adjustment some need
may divider this in R, Resistance R,-R2. divider voltage from
bias -2gate positive its and R3, resistor source RF-bypassed
through current drain the from resulting drop voltage
the from bias -1 gate negative its receives MOSFET The
both). (not secondary the or primary the
either of connections the reverse occur, not does oscillation if
important; is transformer the of Polarity stable. surprisingly
is circuit the frequency, low this At transmissions.
wwv with oscillator the -beat zero to adjusted be may slugs
the and transformer, -tuned slug a is This 1890-P4). No. Miller (
T transformer -frequency intermediate kHz 100 by supplied are
both windings tickler and signal the arrangement, this In
 0.1 µF
SHIELDED CABLE
-J

MOSFET IC AMPLIFIER
GROUND (SEE FIG 2-7 CHAPTER 2)
CLIP

I Ci

10 01 µF 01 F
Parts
D1 240K
L1N34A R1 240K D1 1N34A
R2 10K WW D2 1N34A
Cr 0 01 µF M 0 1 DC mA
C2 0.1 µF S SPST

GROUND
CLIP DEMODULATOR PROBE

Fig. 6-6. Signal tracer(AF -RE).

mA, and the maximum -signal current drain is 87 mA; but

these may vary somewhat with individual MOSFETs and Ics.
TUNED RF -IF SIGNAL TRACER
While aperiodic signal tracers such as the one described in
the preceding section are easy to build and simple to use,
professional signal tracing-especially in the RF and IF stages
of radio and television receivers-often requires that the
instrument be closely tuned to the traced signal. Tuned signal
tracers can be very complicated. Figure 6-7, however, shows a
fairly simple circuit that gives good selectivity and sensitivity.
An electronic DC voltmeter ( either vacuum -tube or
transistorized) is connected to its output terminals to serve as
the visual indicator.
The input of the circuit is of high impedance and untuned,
the signal being coupled into the circuit through capacitor C,
and resistor R,. The signal is picked up with a shielded probe
( of the simple test -meter type) plugged into jack J. The output
of the circuit is tuned by means of C5 and L. A set of five plug-in
coils may be wound for L to cover a tuning range from 440 kHz
to 30 MHz with the 365 pF variable capacitor C5. Table 5-1 in
Chapter 5 gives winding instructions for these coils (in using
this table, take the L2 data for each coil; ignore the L, values,
since the signal tracer coil will not have a tickler).
Output of the tuned circuit is coupled through capacitor C6
to a shunt rectifier circuit (germanium diode D and load

155
 C6
rn
Parts
3N187 0.01 'IF
R1 1M
R2 15K
R3 82K
R4 270 C5,7-7365 pF L3
R5 240K TUNING
0 002 Ci 0.002µF
C2 0.01 pl
C3 0.01 pl
C4 0.005 tA.F
C5 365 pF 0+
C6 0.01 I.LF D A1N34A R5 240K
SIGNAL
B 9V, 3 mA TO ELECTRONIC
INPUT
82K DC VOLTMETER
1M D 1N34A
S SPST 0-
Q 3N187
S\\ON-OFF
C4-0.005
p.F

01
µFF R2 15K R4 270 C3 0 01 µFF B= 9V
3 mA

Fig. 6-7. Tuned RF -IF signal tracer.

resistor R5). The resulting DC output of the rectifier, at the
output terminals, drives the external voltmeter. When using
the tracer, variable capacitor C5 is simply tuned for maximum
deflection of the meter.
In this circuit, the MOSFET receives its negative gate -1 bias
from the voltage drop resulting from the flow of drain current
through source resistor R4, and its positive gate -2 bias from
voltage divider R2 -R3. In this divider, resistance R3 may need
some adjustment for maximum output. Current drain from the
9V supply is approximately 3 mA, but this may vary somewhat
with individual MOSFETs.
AF SIGNAL -TRACER ADAPTER FOR AC VOLTMETER
The 2-MOSFET circuit shown in Fig. 6-8 allows a
low -resistance AC voltmeter ( 100011 or 500012 per volt) to be
used for audio -frequency signal tracing. The input impedance
seen by the signal source is 0.1 iLF ( C,) in series with 1M (R,).
The first stage is a common -source RC amplifier; the second
stage is a source follower delivering output to the meter from
5000 resistor R7. Overall voltage gain of the system is
approximately 15 (that is, 30 for the input stage and 0.5 for the
output stage). With sensitivity control R, set for maximum
sensitivity, the maximum input signal at jack J before peak
clipping in the output is approximately 50 mV RMS. The
corresponding signal at the output terminals
0.75V RMS. This provides a good deflection on the 0-1.5V range
of the AC voltmeter connected to these terminals. A simple
shielded probe may be plugged into jack J.
In this circuit, MOSFET Q, receives its negative gate -1 bias
from the voltage drop resulting from the flow of drain current
through source resistor R4, and its positive gate -2 bias from
voltage divider R2 -R3. In this divider, resistance R3 may
require some adjustment for maximum signal output. The
other MOSFET, Q2, receives its negative gate -1 and gate -2 bias
from the voltage drop resulting from the flow of drain current
through source resistor 14 Current drain from the 12V supply
is approximately 4 mA, but this may vary somewhat with
individual MOSFEIS.
ACTIVE PROBE
Figure 6-9 shows the circuit of a probe (useful with such
instruments as oscilloscopes and meters) that provides not
only voltage gain (10, open -circuit), but also high input
impedance (1µF capacitor C1 in series with 10M resistor 13,1)
and wideband frequency response ( -3 dB at 50 Hz and -6 dB
at 10 MHz). This circuit must be carefully shielded and its
leads individually dressed, all according to wideband practice.

157
01 C3 Parts
CID 1M
R1
R2 470K
3N187 0.1 µF 3N187 3.3M
R3
Qi G2 R4 3,3K
R5 15K
R6 1M
R7 500
C1 0.1 /IF
0.1µF 02 50µF
C3 0.1µF
04 50µF
15K
Cs 1µF
B 12V, 4 mA
S SPST
1M Ch 3N187
AF
R1 02 3N187
INPUT LojJ
SENSITI-
VITY I
I(
1 µF
s\ ON-OFF
AF
500(TOVM)OUTPUT
1-12V B
-4 mA

/J/
I

Fig. 6-8. Audio -frequency signal -tracer adapter for AC voltmeter.

 C6

3N187 1µF
F16 1K
SHIELDED CABLE
PROD
OUTPUT
L g 33 µFi (SEE TEXT)

Parts
R1 10M
R2 15K
GROUND At 10M
CLIP ON OFF R3 82K
R4 47
1300 pF R5 220
R2 15K R6 1K
C.2 0.005
C1 1µF
C2 0.01 /IF
pi 9V
B- -3 mA C3 300 pF
C4 5 µF. 16V
C5 0.005µF
C,6 1 p.F
B 9V. 3 mA
L 33 µH (SEE TEXT)
S SPST
01 Q 3N187
ci) Fig. 6-9. Active probe.
 160
terminals. input AF the to generator signal the Connect (1)
procedure: this follow
values, capacitance determining for instrument the use To
Measurement Capacitance
practicable. as
accuracy high as with obtained be must which unit -micasilver
µF 0.01 a is C2 capacitor Standard bridge. suitable a in mH 1
to exactly set be may which 22A103RBI) (Miller coil -tuned slug
mH 1 a is L inductor Standard M. meter deflect to D diode by
rectified is voltage this and resistor, this across drop voltage
a develops R3 resistor 10011 through flowing current Resonant
x-x. terminals to connected is component unknown The
ts. 1/39.5f = Li and 2L3 1/39.5f = Cx Thus, values. known the
of terms in calculated component unknown the and noted, is
frequency generator the point, that At circuit. -resonant series
the in connected milliammeter AC an of part is which M, meter
of deflection peak for tuned is generator The C2. capacitance,
known a with series in connected inductance unknown the or
L, inductance, known a with series in connected capacitance
unknown the containing circuit -resonant series a drives
which circuit -followersource a provides MOSFET The
C2. capacitor of value the changing
by obtained be may inductance of ranges other and L, inductor
of value the changing by obtained be may capacitance
for ranges Other µF. 63,291 to /IF 0.0632 from capacitance and
6329H to mH 6.3 from inductance measure to used be to kHz)
20 to Hz 20 from (tuning generator audio -frequencyvariable
a allows which checker a of circuit the shows 6-10 Figure
CHECKER LC -RANGE WIDE
MOSFE1S. individual with
somewhat vary may this but mA, 3 approximately is supply
9V the from drain Current signal. output the in distortion
minimum for adjustment some need may R3 resistance
divider, this In, R2-R3. divider voltage from bias -2 gate
positive its and frequencies) high and low both for separately
(bypassed ii4-R5 combination -resistorsource the through
current drain of flow the from resulting drop voltage the from
bias -1 gate negative its receives MOSFET the circuit, this In
response. frequency overall best for C3 Set
housing. probe the in hole a through reached easily is screw
adjusting its that position a such in mounted rigidly be must
latter The C3. capacitor trimmer miniature pF 300 the does
as circuit, amplifier video this in compensation provides It
choke. RF molded 9250-333 Miller a is L inductor µII 33 The
 Parts
150 R1 0.5M
C3 S2::)N1- OFF
R2 500
F3 100
Ci 0.1 µF
Cl / C2 0.01 ;IF 7.5V
C3 50µF Q- 2 mA
F01 µF C4 0.05µF
B 7.5V, 2 mA
D 1N34A
M 0-50 DC µA
L SPDT
61015 S2 SPST
1 mH(SEE TEXT) O 3N187
AF INPUT L 1 mH (SEE TEXT)
0.5 M c C4
(FROM OSCILLATOR
OR SIGNAL
SENSITIVITY
GENERATOR) 0 05 I.L.F
O
M
R2 500 0.01 µF
0-50
X D DC µA
UNKNOWN C OR L 1N34A
CONNECTED HERE
R3 100

CY)
Fig. 6-10. Wide -range LC checker.
 162
position.
-sensitivity maximum its in is control gain amplifier the when
M meter of deflection full-scale for preset is circuit metering
the in R Rheostat full-scale. to M meter of deflection prenull
the set to used be can amplifier the in control gain The
79611. = R4 and 159211, = R5 = R3
µF, 0.2 = C4 iLF, 0.1 = C3 = C2 are: 2-18) Fig. see ( amplifier
the in capacitances and resistances -determiningfrequency
the frequency, bridge Hz 1000 common the For
.
-M) D2-R C-D1- ( circuit meter AC simple
a by followed 2, Chapter in described amplifier peak -tuned RC
the of consists arrangement This specifications. these meeting
circuit -detector null a shows 6-11 Figure high. be detector
the of impedance input the that also important is it and bridge,
AC an balancing in asset an is detector null tuned sharply A
DETECTOR NULL AC
MOSFETs. individual with somewhat
vary may this but mA, 2 approximately is supply 7.5V the
from drain Current R2. resistor source through current drain
of flow the from resulting drop voltage the from bias -2 gate
and -1 gate negative its receives MOSFET the circuit, this In
constant. is C2 of capacitance the since
simplified, is formula the that Note hertz. fin and henrys in is
L where -7, 10 x 1/3.95/2 = L inductance: the Calculate (7)
dial. generator from f frequency read peak, At 6) (
M. meter of deflection peak
a for watching range, its throughout generator Tune 5) (
generator. on turn and S2 switch Close (4)
L. to S, switch Set 3) (
x-x. terminals to inductor unknown the Connect (2)
terminals. input AF the to generator signal the Connect (1)
inductance.
measuring for sequence the describe steps following The
Measurement Inductance
constant. is L of inductance the since
simplified, is formula the that Note hertz. in f and farads in
is C where 1/0.0395/2, = C capacitance: the Calculate (7)
dial. generator from f frequency read peak, At (6)
M. meter of deflection peak
a for watching range, its throughout generator Tune 5) (
generator. on turn and S2 switch Close (4)
c. to S, switch Set (3)
x-x. terminals to capacitor unknown the Connect (2)
 Parts
R 10K WW
C 1µF
1N34A
D2 1N34A
M 0-100 DC p.A
1µF 10K WW

RC -TUNED
FROM BRIDGE AF PEAK AMPLIFIER AF
OUTPUT INPUT (SEE FIG. 2-18, OUTPUT
CHAPTER 2)
0-100
DC µA

Fig. 6-11. Alternating -current null detector.

SENSITIVE LIGHT METER

Figure 6-12 shows the circuit, which increases the
sensitivity of a self -generating selenium photocell. The circuit
is basically that of a MOSFET DC amplifier which drives a 0-100
DC microammeter. The meter is connected in a 4 -arm bridge
circuit in the output of the MOSFET. The arms of this bridge
consist of resistors R2, R3, and R4 and the internal
drain -to -source resistance of the MOSFET.
Initially, with photocell PC (International Rectifier
B3M-C1) darkened, the bridge is balanced and the meter,
therefore, zeroed by adjustment of rheostat R4. For this
operation, potentiometer R1 should be set to its
maximum -sensitivity position. When subsequently the
photocell is illuminated, the resulting output voltage drives the
MOSFET gates positive; and this changes the internal
resistance of the MOSFET, unbalancing the bridge and causing
the meter to deflect proportionately.
Illumination of 10 footcandles results in full-scale
deflection of the meter. By comparison, if the photocell is
connected directly to the microammeter, illumination of 100
footcandles will give approximately 75% of full-scale
deflection. If facilities for calibration are available, a dial
attached to potentiometer R1 may be graduated to read
directly in footcandles.
Current drain from the 6V supply is approximately 3 mA,
but this may vary somewhat with individual MOSFETS.
SINE- TO SQUARE -WAVE CONVERTER
Figure 6-13 shows an aperiodic ( untuned) circuit for.
converting input sine waves into output square waves. This

163
 R4
rn
41.
ZERO SET 5K WW
3N187
0

4-
0- 100 DC µA

RED

PC B3M-C

BLACK
R2 R3
vv,
470 470
Parts
R1
50K WW R1 50K WW
SENSITIVITY R2 470 S \ON-OFF
R3 470
R4 5K WW
B 6V 3 mA
M 0-100 DC p.A 6V
PC B3M-C B-= 3 mA
S SPST
0 3N187

Fig. 6-12. Sensitive light meter.

NU

11/4

S \ON-OFF R3 10K
02 (SEE TEXT)

B
I6V 3N187
- 0 5 mA SQUARE -WAVE
T- 02 OUTPUT

Parts
R1 0.47M
SINE -WAVE
R2 10K
INPUT Fii 0.47M
R3 10K
0 R4 1K
Ci 0.1 µF
R4 1K
C2 SEE TEXT
B 6V, 0.5 mA
S SPST
01
02 33N118877
N
1

Fig. 6-13. Sine- to square -wave converter.

 166
the transmitter, the from distance some Operable signals.
cw for monitor sensitive a of circuit the shows 6-15 Figure
MONITOR CW
mosFurs. individual with somewhat
vary may this but mA, 2 approximately is source 9V the from
drain Current output. maximum for adjustment some require
may divider this in R4 Resistance R3-R4. divider voltage
from bias -2gate positive its and R5, resistor source through
current drain of flow the from resulting drop voltage the from
bias -1 gate negative its receives MOSFET the circuit, this In
connected. be may 2) Chapter
2-7, Fig. example, for see, ( speaker and amplifier suitable
a signal, louder a for or, terminals; output the to directly
connected be may earpiece or headset -impedance high A
monitor. the of sensitivity the
providing amplifier, AF an as solely here functions MOSFET The
H2. control volume through MOSFET the of 1 gate to presented
is modulation, the to corresponding envelope, AF resulting
the and D, diode 1N34A by demodulated is signal The
4. Chapter 4-1, Table in given instructions the to
according wound be may coils plug-in and capacitor, variable
pF 365 a is C2 MHz, 30 to kHz 440 from tuning -coverage general
For C2. capacitor and L inductor with in tuned is signal The
rod. or wire stiff of length vertical a simply
or antenna whip standard a be may which antenna, pickup
small a through signal its receives device the transmitter, the
from distance some at Operable signals. -modulatedamplitude
for monitor sensitive a of circuit the shows 6-14 Figure
MONITOR AM
MOSFETS. individual with somewhat vary may this but
mA, 0.5 approximately is supply 6V the from drain Current
suitable. be will 1µF instances, most
In waveform. square the distort least will which chosen being
value that experimentally, determined be must it load; the
of reactance and resistance the upon depend will capacitance
actual The Q2. MOSFET of drain the short-circuit would
device load output the when required be will C2 Capacitor
2). Chapter 2-1, Fig. example, for (see, stage amplifier
intermediate an from derived be may converter the of voltage
input the output, low has source signal -wave sine the Where
especially instances, some In RMS. 0.8V is shape -wave square
good for amplitude signal input minimum The
R4. resistor source common by coupled stages
overdriven cascaded of essentially consists arrangement
 C6
PICKUP ANTENNA
R1 1K Parts 0.1 µF
R2 1M
R3 470K
3N187 R4 3.3M
0 R5 330
50 pF 1K
R6
C4 C1 50 pF
D
C2 365 pF Rs 1K
PO-
1N34A C3 0.005µF
0.1 /IF
C4 0.1 i.LF
C2''4 365 pF
. TUNING C5 50µF AF OUTPUT
C6 0.1 p.F (TO HEADPHONES OR
B 9V, 2 mA TO AMPLIFIER AND
D 1N34A SPEAKER)
S SPST 0
0 005
R1 1K C) 3N187
N-IOLUME
SEE TEXT FOR L
ON-OFF

R3 470K R5 330

0) / // Fig. 6-14. Monitor forAM.

rn C6
OD
PICKUP ANTENNA
3N187
0..

1,50 pF C3

I(
100 pF
1

C2 365 pF
TUNING
R2 470K
AF OUTPUT
(TO HEADPHONES
R1 OR TO AMPLIFIER
AND SPEAKER)
Parts 270 0
R1 270 C4 0.005µF C,1 R4 R5
R2 470K C5 0.005µF 25K 27K -
R3 4.7K C6 0.1 /.1.F
0 005 p.F OSCILLATION
R4 25K C7 0.005µF S OFF
R5 27K B 9V, 2 mA 0 005 AF
\ON
Q C7,-, 0.005µF
R6 1K S SPST R3 4.7K
C1 50 pF 0 3N187 9V
B
G2 365 pF SEE TEXT FOR L -2 mA
G3 100 pF

/ Fig. 6-15. Monitor for cw.

device is essentially an oscillating detector which receives its
signal through a small pickup antenna. The latter may be a
standard whip antenna or a vertical rod or wire.
The signal is tuned in with inductor L and capacitor C2. For
general -coverage tuning from 440 kHz to 30 MHz, C2 is a 365 pF
variable capacitor, and plug-in coils may be wound according
to the instructions given in Table 5-2, Chapter 5.
In this circuit, oscillation ( regeneration) is controlled by
adjustment of rheostat R4 in the voltage divider which supplies
positive bias to gate 2 of the MOSFET. This control is set for the
most pleasing tone. Gate 1 receives its negative bias from the
voltage drop resulting from the flow of drain current through
the RF-bypassed source resistor RI. High -resistance
headphones may be connected directly to the output
terminals; for louder signals, an amplifier and speaker ( see,
for example, Fig. 2-7, Chapter 2) may be connected instead.
Current drain from the 9V supply is approximately 2 mA,
but this may vary somewhat with individual MOSFETS.

169
 170
load the through current the 7-1B, Fig. in shown As varies.
resistance load or voltage applied the while steady current the
hold to tends type this of device -currentconstant A MOSFET.
the of characteristic -current drain flat almost the upon
based regulator current a of circuit the shows 7-lA Figure
ADAPTER -CURRENTCONSTANT
1. Chapter
in given precautions and hints the carefully read chapter, this
in circuit any of testing or wiring the undertaking Before
leads.
direct practicable shortest the with wired be will and shielded
adequately be will circuits -frequencyradio all that assumed
is It battery. a of instead used be may supply power filtered
well a however, supply; DC for shown are batteries simplicity,
For 25V. at rated be to are capacitors electrolytic and 1/2W,
are Resistors henrys. in inductances and ohms, in resistances
picofarads, in are capacitances text, the in or diagram
the on otherwise indicated unless circuits, the of each In
experimenter. alert the
to applications other suggest will circuits These capacitance.
feedback low modulation, cross negligible transconductance,
high impedance, input high MOSFET: the of properties
desirable the of more or one exploits circuit Each chapters.
preceding 6 the by covered categories the into precisely
fit not do chapter this in presented circuits additional 15 The
Circuits Miscellaneous
7 Chapter
 132 IL

+111

3N187
O

52 IL
1.2V 3 mA
2 3.4 LOAD
3 3.6
6 4
(8) TYPICAL OPERATION
± 1 5V

(A) CIRCUIT
Fig. 7-1. Constant -current adapter.

(here a low resistance) varies only 1.33 to 1 as the applied

voltage varies 5 to 1.
In this arrangement, the MOSFET ( gate 1) is prebiased by
the 1.5V cell B1. The internal drain -to -source circuit then acts
as an automatic resistor whose value changes in the proper
direction and amount to slow current changes in the drain
circuit containing battery B2 and the load. When B2 is 1.2V, the
load current IL is 3 mA; and when B2 is 6V, IL is 4 mA ( see Fig.
7-1B). The B, voltage is selected in any special application of
this adapter to place the operating point along the flat part of
the drain-current-drain-voltage characteristic between the
limits of the low and high values of B2.
Since the current drain from B, is infinitesimal, no switch
is generally needed for this cell.
CHARGE DETECTOR (ELECTROSCOPE)
A device for detecting the presence of static charges is
indispensable in many areas of electronics. The old-fashioned
gold -leaf electroscope has a long record of usefulness as a
static detector, but this device must be held upright at all
times. The device shown schematically in Fig. 7-2, however,
may be held in any position. No contact need be made with the
charged body; the disc is merely held near it.
This arrangement is similar to an electronic DC voltmeter,
but with an open input circuit. Gate 2 of the MOSFET is floating
and thus is highly susceptible to nearby electric charges. The
gate is connected to a smooth, 1/2 in. diameter metal disc on the
end of a rod or short length of stiff wire ( a polished metal ball
will also serve), and this disc is held in the suspected field or-
close to the charged body. The picked -up energy is amplified

171
 172
be often most will component this of capacitance The included.
be must C4 capacitor blocking a Q2, MOSFET of drain the ground
will feeds flip-flop the which into circuit the which in setups
In omitted. be not should C3 and C2 capacitors commutating
and D2 and DI diodes steering arrangement, this In terminals.
input the at pulse negative 9V a to response in peak 9V
approximately to swings output -circuit open The waveform.
square reasonably a delivers and kHz 2 to up rates at
precision clean with switches circuit The mosFETs. to adapted
flip-flop conventional a of circuit the shows 7-3 Figure
FLIP-FLOP
MOSFETs. individual with somewhat vary may this but
mA, 4 approximately is battery 9V the from drain Current
receiver.
TV a in wiring -voltage high the at pointed is pickup the when
example, for obtained, is deflection substantial A field. a into
moved is disc the whenever meter the of deflection upward
an by respond then will device The meter. the zero to set is
R2 potentiometer body, operator's the from away pointed and
fields electric any of clear disc pickup the With MOSFET. the of
resistance -source -to drain internal the and R2, potentiometer
of "halves" two the RI, resistor of consist bridge this of arms
The section. output the in circuit bridge -arm4 a in connected is
meter indicating the circuit, voltmeter electronic an in As
M. microammeter
DC miniature drives latter the and MOSFET, the by
(electroscope). detector Charge 7-2. Fig.
mA 4
9V
I
3N187 O
SPST S
-OFF ON ALA DC 0-50 M
1KWW mA 4 9V, B
1KWW R2
SET RZERO 1K R1
Parts
µA DC 0-50
O
3N187
1K
vvs.
R1 DISC METAL -DIAMETER 41/2"
 Parts
560K
ON-
Ri 560K R3 1200 R5 560K Ri OFF
R2 560K
02 1200
R3
R4 560K
1N4152 1N4152 18V
R5 560K B
ci R6 10M 32 p.A
10M
R7
1
R8 560K ,T,
F50pc
C2 C3 C1 50 pF
02 50 pF
03 50 pF
50 pF 50 pF
R2 R4 C4 (SEE TEXT)

560K
:
560K

INPUT 3N187 3N187

C4 (SEE TEXT)
02 B 18V, 32µA
D1 1N4152
D2 1N4152
S SPST OUTPUT
3N187
02 3N187

F16 10M R7 10M R8 560K

41)

-L
Oa Fig. 7-3. Flip-flop.
 174
modulator. balanced the following filter selective
a by amplified then is sidebands these of one instrumentation,
and communications both In T3. by transmitted
are sidebands resulting two the only so suppressed,
been has latter the but carrier; the modulates it applied,
is component AF the When T3. transformer in component
RF the of elimination in results then R7 potentiometer
of and C3-C4 capacitor variable dual the of adjustment
Close halves. its of each in components circuit and MOSFETS
of matching close the by established is circuit the of symmetry
Ideal push-pull. in electrodes -1 gate the at arrives terminals)
input AF the at applied ( component modulation the whereas
parallel, in electrodes -1 gate the at arrives and terminals input
RF the to applied is component carrier the circuit, this In
type. triode the of modulator
balanced 2-MOSFET a of circuit the shows 7-5 Figure modulator.
diode simple the to respects some in superior is modulator
balanced -type triode The techniques. -eliminationcarrier
utilizing instruments -typeheterodyne in and communications
sideband in required is modulator balanced A
MODULATOR BALANCED
output. signal maximum for required be may R3 resistance
of adjustment some MOSFET individual an With R3. R2- divider
voltage from bias -2 gate positive its and R4, resistor source
through current drain of flow the from resulting drop voltage
the from bias -1 gate negative its receives mostET The
frequencies.
supersonic at vibration prevent to employed be should
1
mounting rigid device, this of construction the In RMS. 1.5V
approximately is signal output maximum corresponding The
signal. output amplifier the in clipping peak before RMS mV
50 approximately is gain, maximum for set R1 potentiometer
control gain with signal, (microphone) transducer maximum
The 30. approximately is gain voltage -circuitopen The
service. long give to expected be may battery self-contained
a low, is drain current the Since source. sound supersonic
a to close positioning for head small a into built be may
which circuit pickup-preamplifier a shows 7-4 Figure
PICKUP SUPERSONIC
MOSFETS. individual with somewhat vary may this but 32µA,
approximately is supply 18V the from drain Current mosFETs.
of pair matched a with gained be to is advantage Some
circuit. driven the to energy of transfer maximum and output
flip-flop the of distortion least for chosen be must but pF, 100
 Parts 0.01
3N187 R1 10M
0 R2 470K
R3 3.3M
R4 3.3K
R5 15K
C1
RF215K
1012F
C2 0.01 i.L.F
B 12V, 0.5 mA
S SPST
3N187 SUPERSONIC OUTPUT
10M R3
Rl 0
GAIN 3.3M
ON -OFF

CRYSTAL
TRANSDUCER
Ro 470K R4 3.3K
MIC
12V
B 0 5 mA

01 Fig. 7-4. Supersonic pickup.

 3N187
01

s\DN - OFF
B - 6V
AF T2 T 3.2 mA C3y SIDEBAND
INPUT R7 OUTPUT
C4

///
Parts
R1 470K C1 0.1 i.LF
R2 1.5M C2 0.1 AF
R3 270 B 6V, 3.2 mA
R5 470K S SPST
R5 1.5M a 3N187
R6 270 02 3N187
o RF o R7 10K WW
INPUT SEE TEXT FOR C3 -C4, T1, T2, AND T3

Fig. 7-5. Balanced modulator.

 Transformer T, must be a high -quality audio component
having as accurate a centertap as obtainable; the turns ratio
usually is unimportant, but will usually be 1:1 or 2:1.
Radio -frequency transformer T2, like the audio transformer,
usually is not critical as to turns ratio. It may be an air -core,
ferrite -core, or powdered -iron -core unit. ( This unit can be
improvised from any IF transformer by disconnecting the
internal capacitors, and for high -frequency operation a
unity -coupled transformer can be obtained by interwinding
two coils of 25 to 50 turns each on a 1 in. diameter form.)
Transformer T3 must be chosen such that its tapped primary
resonates with C3-C4 at the sideband frequency. Capacitors
C3-C4are chosen in the same way.
Some advantage is gained from the use of balanced
MOSFETS and matching resistors in the two halves of this
circuit. Here, MOSFET Q, receives its negative gate -1 bias from
the voltage drop resulting from the flow of drain current
through source resistor R3, and its positive gate -2 bias from
voltage divider R1-R2. Similarly, MOSFET Q2 receives its
negative gate -1 bias from the flow of drain current through
source resistor R6, and its positive gate -2 bias from voltage
divider R4 -1i5. With individual MOSFETS some adjustment of
resistances R2 and R5 may be required for improved balance of
the circuit.
Current drain from the 6V supply is approximately 3.2 mA,
but this may vary somewhat with individual MOSFETS.

SIMPLE LIGHT -BEAM RECEIVER

Figure 7-6 shows the circuit of a simple receiver for
modulated light -beam communications. The pickup device is a
high -output, self -generating silicon photocell, PC
( International S7M-C). The audio output of this cell is
presented to gate 1 of the MOSFET through blocking capacitor
CI, which prevents the DC output of the cell from reaching the
gate.
The circuit gives excellent results with a high -resistance
earpiece. The amplifier is a conventional common -source unit
in which gate 1 of the MOSFET receives its negative bias from
the voltage drop resulting from the flow of drain current
through source resistor R5, and gate 2 receives its positive bias
from voltage divider R3-R4. With an individual MOSFET, some
increase in maximum obtainable volume may be obtained by
experimenting with the value of resistance R4. Current drain
from the 9V supply is approximately 2.6 mA, but this may vary
somewhat with individual MOSFETS.

177
Co
Parts
MODULATED R1 5K WW
LIGHT R2 470K
PC
BEAM R3 1600
RED 8200
1:14

R5 270 HIGH -
S7M-C 0.1 µF
Ci 0.1 p.F RESISTANCE
G2 50µF HEADPHONES
BLACK
B 9V, 2.6 mA
PC S7M-C
S SPST
O 3N187
5K
WW
Ri R2 470K
VOLUME

s
\DN-OFF

C2 501.4.F 9V
R
i 1
B_=_.__
2 6 mA

T i
/ //
Fig. 7-6. Simple light -beam receiver.
 SENSITIVE LIGHT -BEAM RECEIVER
Figure 7-7 shows the circuit of a modulated light -beam
receiver having considerably more sensitivity than the simple
receiver previously described. It therefore can accommodate
a weaker signal than can be handled by the simpler receiver.
In this arrangement, the photocell is followed by a 2 -stage
MOSFET amplifier having an overall open -circuit voltage gain
of approximately 100 when volume control R, is set for
maximum. The audio output may be applied directly to
high -impedance headphones, or the receiver may be followed
with an amplifier and speaker. (A suitable external amplifier
is described in the section MOSFET Input for lc Amplifier,
Chapter 2.)
In the receiver circuit, MOSFET Q1 receives its negative
gate -1 bias from the voltage drop resulting from the flow of
drain current through source resistor R5, and its positive
gate -2 bias from voltage divider R3-R4. Similarly, MOSFET Q2
receives its negative gate -1 bias from the voltage drop
resulting from the flow of drain current through source
resistor R10, and its positive gate -2 bias from voltage divider
R8-R9. With individual MOSFETS, some adjustment of
resistances R4 and R8 may provide greater sensitivity.
Current drain from the 6V supply is approximately 3.2 mA,
but this may vary somewhat with individual MOSFETS.

REGENERATIVE BROADCAST RECEIVER

For the experimenter and hobbyist, regeneration provides
a substantial boost in receiver sensitivity without getting into
sophisticated circuits. Figure 7-8 shows the circuit of a simple
regenerative receiver for the standard broadcast band.
Here, L is a tapped ferrite loopstick antenna rod which
allows full coverage of the broadcast band with variable
capacitor C2 (365 pF). The regeneration control is the 25,000f/
rheostat R4, in the voltage divider for positive gate -2 bias of the
MOSFET. Transformer T may be any convenient interstage
audio unit having a turns ratio of 1:1, 2:1, or 3:1. The audio
output of the receiver is sufficient to drive a high -impedance
headset or earpiece connected directly to the output terminals.
However, an external amplifier and speaker may be connected
to these terminals, if desired ( a suitable amplifier is described
in the section MOSFET Input for tc Amplifier, Chapter 2).
In this circuit, suitable gate -1 negative bias is obtained
from the voltage drop resulting from the flow of drain current
through source resistor R3. Current drain from the 9V supply is -
approximately 2 mA, but this may vary somewhat with

179
- A.
C5
CO
O 3N187 3N187
02

MODULATED
LIGHT PC Parts R11 1800
Ri 4700 Ci 0.1 µF
R2 1M C2 50µF R41800
S7M-C R3 470K C3 0.1 µF
R4 1.5M C4 50µF
R5 270 C5 0.1 ;IF AF OUTPUT
R6 1800 B 6V, 3.2 mA (TO HEADPHONES
R7 0.5M PC S7M-C OR TO AMPLIFIER
R8 1.5M S SPST AND SPEAKER)
R9 470K 01 3N187
A10 270 02 3N187
Ri
ON-
1 5M SPST OFF
R8

Rio 270 C4
1- 50 liF _._
_t 6V
Rq 470K 3.2 mA

I BI
/
Fig. 7-7. Sensitive light -beam receiver.
frprommrwrirmilrwwwww.11.111h,

TO EXTERNAL ANTENNA RFC

I
000
25 mH
3N187
-20 pF
C7 pF

T100
I(
100 pF
L
nil
TAPPED
FERRITE i:
ANTENNA C2,-4365 pF R11M
STICKu. TUNING
nu 0
1111 0 C4
1111
Parts I
R1 1M C3 00 pF 50 pF R5
R2 5K C4 50 pF
Raviv
25K 27K
R3 270 C5 0.01 ON-OFF
REGEN
R4 25K C6 0.01 µF
R5 27K C7 100 pF R2 5K Rs5 270
C1 20 pF B 9V, 2 mA S SPST C57 -S0.01 01 S9+
- -- 9V
C2 365 pF RFC 25 mH 0 3N187 6_7__"
2 mA
1 C6TO

Co
Fig. 7-8. Regenerative broadcast receiver.
 182
pF.) 365 = capacitance (Tuning
LI. of end bottom from in. 1/16 Mount
in. 1/4 of length winding to Space diameter.
in in. 1/2 airwound wire enameled 22 No. turns 4 L2
in. 1/2 of length winding to Space diameter. MHz 18-30
in in. 1/2airwound wire enameled 22 No. turns 5'/2 LI E Band
oft,.
end bottom from in. 1/16 Space L,. as form same
on closewound wire enameled 22 No. turns 4 L2
form. diameter in. 1 MHz 8-20
on closewound wire enameled 22 No. turns 10 LI D Band
LI. of
end bottom from 1/16in. Space LI. as form same
on closewound wire enameled 26 No. turns 8 L2
form. in.diameter 1 MHz 3.4-9
on closewound wire enameled 26 No. turns 27 LI C Band
L,. of
end bottom from in. 1/,6 Space L,. as form same
on closewound wire enameled 32 No. turns 15 L2
form. diameter in. 1 MHz 1-3.5
on closewound wire enameled 32 No. turns 65 L, B Band
L.,. of end tom
bot- from in. 1/16 Space L,. as form same on
closewound wire enameled 32 No. turns 45 L2
form. diameter in. 1 on kHz 440-1200
closewound wire enameled 32 No. turns 187 L, A Band
receiver.* regenerative -wave all for data -winding Coil 7-1. Table
C5. capacitor by RF-bypassed is transformer this of primary
The 3:1. or 2:1, 1:1, of ratio turns a having unit interstage
convenient any be can T Transformer 2). Chapter Amplifier,
Ic for Input MOSFET section the in described is amplifier
suitable a ( terminals these to connected be also may speaker
and amplifier external an However, terminals. output the to
connected earpiece or headset -impedance high a directly drive
to sufficient is receiver the of output audio The arrangement.
(
-coil tickler standard a is circuit The used. are -L2) LI coils
plug-in -section2 five 7-1, Table in shown As bands. five in MHz
30 to kHz 440 of range -coveragegeneral the having receiver
regenerative sensitive a of circuit the shows 7-9 Figure
RECEIVER REGENERATIVE -WAVE ALL
used. be must andground
antenna outside an ones, weaker and stations distant more For
L. stick antenna the only with stations distant high-powered
and stations broadcast nearby up pick to sensitivity sufficient
circuit the give constants operating The MOSFETS. individual
 3N187

50 pF
AF OUTPUT
0
C2 7-4- 365 pF (TO HEADPHONES OR
-I-0 002 g
/IF TO AMPLIFIER AND
SPEAKER)

ANT b L2

Parts
R1 5K
R2
GND 0 R2 27K 1=1,.!L
R3 270 27K 25K
- OFF
R4 25K REGEN
C1 50 pF \N
C2 365 pF Ri 5K 270
R3
C3 0.002 µF 9V
C37-7 0.002 C4 - 0.005
C4 0.005µF 1 mA
C5 0.002 µF µF
B
T
9V, 1 mA
S SPST
Q 3N187
/// SEE TABLE 7-1 FOR Li AND L2

CO
Fig. 7-9. All -wave regenerative receiver.
 184
upscale deflected be will meter the Subsequently. meter.
the zero to set is R3 potentiometer station, any from detuned
receiver the With MOSFET. the of resistance -source -todrain
internal the and R3, potentiometer of "halves" two the R2,
resistor of consist bridge this of arms the circuit; bridge -arm4
a in circuit drain the in connected is meter indicating The
voltmeter. DC electronic an of that to similar is circuit This
system. AGC receiver's the of loading discernible
no in results which resistance, input high its is setup this in
MOSFET a of advantage The receiver. a to added be may which
meter tuning sensitive a of circuit the shows 7-11 Figure
METER TUNING
MOSFETS. individual with somewhat
vary may this but mA, 10 approximately is instrument
test or receiver the in source 18V the from drain Current
gain. conversion maximum for adjustment some
require may divider this in R2 resistance MOSFET, individual
an With R1-R2. divider voltage from bias positive its receives
MOSFET the of 2 Gate value. correct the has bias resulting
the and 1, gate to applied also is -1i4R3 divider voltage
by developed voltage, positive proper a this, counteract
To MOSFET). the of operation optimum for R5 resistor
source and transconductance, best the for selected been
has current drain (the MOSFET the of electrode -1 gate the for
high too is R5 resistor source through current drain of flow the
from resulting voltage negative the arrangement, this In
frequency. intermediate desired the
for selected is transformer IF The cases. most in satisfactory
be will C2, and C1 capacitances, coupling The 2. gate to
applied is signal oscillator local the while MOSFET, the of 1 gate
to presented is stage) amplifier RF from (as signal incoming
the Here, instrument. test or receiver superheterodyne
a of end front the into incorporated readily is stage
a Such applications. -frequencyradio for stage converter) (
mixer simple a of circuit the shows 7-10 Figure
MIXER RF
mosFETs. individual with somewhat vary may this but mA, 1
approximately is supply 9V the from drain Current R1-R2-R4.
divider voltage from bias positive its receives electrode
-2gate The R3. resistor source RF-bypassed through current
drain of flow the from resulting drop voltage the from bias
negative its receives MOSFET the of 1 gate circuit, this In
 -A I'
OSCILLATOR 3N187
a
1
a' IF OUTPUT
INPUT O
6 8 pF
T
C2 L -J I
SIGNAL
INPUT ll
250 pF
th
TO +18V
>10 mA
Parts
R1 11K
R2 R3
R2 120K
120K 100K 0.002 R3 100K
R4 27K
R 11K Ra 27K 330
Rs R5 330
7-70.002 0 002 p.F
C1 6.8 pF
pF
C2 250 pF
C3 0.002µF
COMMON > C4 0.002µF
C5 0.002µF
0 3N187

CO Fig. 7-10. Radio -frequency mixer.

01
CO Parts A2
R1 10M
1K
R2 1K
F3 5K WW
M 0-50 DC µA 3N187
O 3N187 O

0-50 DC µA

Fk3 ZERO SET

10M
R1 5K WW
SENSITIVITY
TO NEG
AGC BUS >+
TO DC SUPPLY
(6V 11.2 mA)

TO GROUND<

Fig. 7-11. Tuning meter.

whenever a carrier is tuned in, and the deflection will be
proportional to the signal strength. In terms of some reference
setting of the receiver gain controls, the scale of the meter
may be calibrated in microvolts, millivolts, S -units, or other
indicators of signal strength. For establishing an S -meter
scale, make 100 p,V equal to S9, 50 µV equal to S8, 25 µV to S7,
etc. (Each S -unit should be equal to 6 dB voltage change.)
Current drain from the 6V supply in the receiver is
approximately 11.2 mA, but this may vary somewhat with
individual MOSFETS.

HETERODYNE ELIMINATOR
The circuit shown in Fig. 7-12 is a highly effective one for
eliminating heterodyne whistles in a receiver that has no
provision, such as a crystal filter or Q -multiplier, for getting
rid of this annoyance. This circuit operates in the audio
channel of the receiver, which it does not load, owing to the
high resistance of RI. The eliminator may be operated at the
AF output of the receiver or patched into the audio channel.
The tuned section of the circuit is a Hall network
(C3-C4-05 R3- R4) connected between the input and output
stages. The advantage of this network is the tuning it provides
with only one potentiometer ( R4) . When R4 is set to the proper
point, the network, acting as a bandstop filter, removes the
whistle at the corresponding frequency.
The Hall network works best with a low -impedance
generator and low -impedance load, and this condition is
approximated by driving it with a MOSFET source follower (Q1)
and following it with a bipolar common -emitter stage (Q2)
which exhibits medium -resistance input. A high -impedance
headset or earpiece may be connected directly to the output
terminals, or an amplifier and speaker may be operated from
the output. ( A suitable amplifier is described in the section
MOSFET Input for Ic Amplifier, Chapter 2. )
Current drain from the 6V supply is approximately 2.2 mA,
but this may vary somewhat with individual MOSFETs and
bipolar transistors.
FLEA -POWER "QRP" TRANSMITTER
Figure 7-13 shows the circuit of a low -powered transmitter
suitable for clear -channel cw communication and for antenna
tuneup operations. It consists of a conventional, keyed crystal
oscillator. The DC input power of this transmitter is
approximately 60 mW.
In this circuit, the crystal ( XTAL) is selected for the
desired operating frequency, and the coil set L1-L2 is also

187
 03
'op - OFF
s\ON
B =. 6V Rs 27K
2.2 mA
C2 50 /..1.F

)
R3

0.1 ki..F 180K 0.1 AF

2N2712
02
C4 C5

0.1 /IF 0.0112.F

E -I
0.1 1.1.F
Parts
1M AF OUTPUT
R1 1M (TO HEADPHONES
AF INPUT H1
R2 500 OR TO AMPLIFIER
VOLUME
POT R3 180K AND SPEAKER)
R4 R4 5K AUDIO TAPER
R6 470
AlitTIONI57 27K RS 470
R6
TAPER C6 50 µF
C1 0.1 /IF
TUNING
C2 50 µF
C3 0.1 µF
C4 0.01 /IF B 6V, 2.2 MA
C5 0.1 µF S SPST
C6 50µF 0.1 3N187
C7 0.1 p_F Q. 2N2712

Fig. 7-12. Heterodyne eliminator.

 Cl L

25 pF 0 002 kLF
C57-za 50 pF
TUNING L2

RFC 2.5 mH RF OUTPUT

3N187 E
O of
Imo, Parts
R1 470K
R2 10K
R3 5K WW
R4 47K
0-1 R5 3.9
R5 39 M
DC mA C1 25 pF
C2 0.002µF
C3 0.002µF
XTAL I=1 C4 0.002µF
470K 50 pF
R3 R4 KEY C5
B 6V. 10.1 mA
5K WW 47K M 0-1 DC mA
10K RFC 2.5 mH
R2
O 3N187
C2 ,77- -N 0.002 iC3- 0 002 kiF SEE TEXT FOR
ILF
L1 AND L2

03
/47
Fig. 7-13. Flea -power transmitter.
 190
dipped the raise to adjusted and connected is then load The M.
milliammeter by indicated as current drain of dip minimum
for adjusted is C4 capacitor terminals, output the to connected
load no and terminals, input the to applied signal driving the
closed, S switch With conventional: and simple is Tuning
terminals. input the at signal peak
1.5V a by driven fully is doubler The MOSFET. individual with
required be may R3 and R2 resistances of adjustment Some
R3-R4. divider voltage of output the from results 2 gate on bias
positive the while R1-R2, divider voltage of output positive
the and R5 resistor source across drop voltage negative
the from results 1 gate on bias negative net The biases. -2gate
and -1 gate proper of means by obtained being condition this
pinchoff, -currentdrain at runs MOSFET the circuit, this In
lines. dotted
the and C5 of means by coupled capacitively or lines, solid the
by shown as coupled, link either be may output RF The bands.
amateur the for available commercially are shown capacitor
tuning pF 100 the with use for (L,-L2) sets coil -link end
Suitable terminals. input the to applied signal the of frequency
the twice to tuned is -L C4 circuit tank the operation,
doubler of manner conventional the in circuit, this In
section. preceding the
in described transmitter -type oscillator the with conjunction
in example, for used, be may doubler This operation. MOSFET
for adapted and transmitters -poweredlow in use for doubler
frequency conventional a of circuit the shows 7-14 Figure
DOUBLER FREQUENCY
MOSFETh. individual with somewhat vary may this but mA,
10.1 approximately is B supply 6V the from drain current The
MOSFET. individual an with obtained be to output maximum
permits adjustment This R3. rheostat of means by adjusted
be may MOSFET the of 2 gate to applied bias positive The
dip.) of side one
to slightly detune to prefer reader, ham the to known well is
as operators, (Some dip. for C5, of readjustment by up, touched
is tuning the Finally, mA. 10 to current dipped the raise
to adjusted and connected is then load The M. milliammeter
by indicated as current drain of dip minimum for adjusted
is C5 terminals, output the to connected load no and depressed
key the With straightforward: and simple is Tuning
grounded. be L1-05to tank the enables circuit output drain
the in feed shunt of use The bands. amateur the for available
commercially are shown capacitor tuning pF 50 the with
use for sets coil -link end Suitable frequency. this for chosen
 Parts
Ri 39K C4 100 pF C5
R2 1M Cs 500 pF
R3 750K C6 0,005 µF r
R4 220K B 18V, 10 mA SEE TEXT FOR Li AND L2 Li
500 pF
R5 270 M 0-15 DC mA
C1 500µF RFC 2.5 mH 3N187
S SPST Q 100
C2
C3
0.005µF
0.01 µF 0 3N187
C4
I2 pF
TUNING O
Ci
O
RF OUTPUT
500 pF

1
0 0-15 DC mA
RFC g2.5 mH
to

RF INPUT
R2 R3
\ON - OFF
1M 750K
C6 0.005 piF
R1 39K R5 270
R4 220K C2
- 0.005 0.01 1.1F B- - 18V
10mA
T

/
CO
Fig. 7-14. Frequency doubler.
cD Parts
Ri 1M 04 0.01µF C6
Rs
R2 470K Cs 10µF ovvv
R3 1.5M 06 0.005 p..F 47K 0 005 µ.F
R4 270 C7 0.005 p.F.
R5 47K RFC1 2.5 mH
C1 0.01 i.k.F RFC2 2.5 mH C7 TO TOP OF
C2 100 pF S SPST 3N187 OSCILLATOR
C3 0.002µF 0 3N187 0 [0 005 p.F TANK

RFC1
0 0 0 CIL, a
2.5 mH RFC2 2.5 mH
0.01 ;IF
C2-100 pF

AF POT R3
INPUT 1M
R 1 5M \ON - OFF
GAIN
0674N-10 µF
Sp
R2 470K >+
R4 270
C3 0 002 µF 0.01µF TO DC SUPPLY (6V, 2 mA)

I/I

Fig. 7-15. Reactance modulator.

current to 10 mA. Finally, the tuning is touched up by
readjustment of C4 for dip. The DC power input of the doubler is
approximately 153 mW, but this may vary somewhat with
individual MOSFEIS.

REACTANCE MODULATOR
Figure 7-15 shows the circuit of a conventional reactance
modulator for frequency -modulating a self-excited oscillator.
With the drain connected to the tank of the oscillator, this
modulator will swing the oscillator frequency proportionate to
the amplitude of the audio voltage applied at jack J. Capacitor
C6 and resistor R5 provide the necessary phase shift to gate 1 of
the MOSFET. The entire unit must be mounted close to the
oscillator, so that the connection between C7, C6, and the
oscillator tank may be as short and direct as practicable. This
arrangement is suitable not only for FM transmitters, but for
sweeping the frequency of a test oscillator.
In this circuit, the negative gate -1 bias is obtained from the
voltage drop resulting from the flow of drain current through
source resistor R4, and the positive gate -2 bias from voltage
divider R2- R3. Current drain from a 6V supply in the
transmitter or test instrument is approximately 2 mA, but this
may vary with individual mosFurs.

193
 194
98 relay 56 response peaked
151 device measuring 46.49 peak
Capacitance 33 paraphase
C 40 low-pass -tuned Lc
74 -tuned)single ( IF
179 receiver 77
62
-tuned) double ( IF
data coil -band 44 -tuned)Lc ( high-pass
Broadcast 20 -gainhigh
126 Wien Bridge, 56 headphone
172 multivibrator Bistable 35 -on gated
44 cut Bass 38 -off gated
15 MOSFET connections, Base 62 voltage oc
52 rejection Bandwidth, 64
54 (}lc) amplifier
galvanometer DC
60 DC
52 Lc) amplifier)
61 current
Bandstop 52 Lc) ( bandstop
52.154 amplifier rejection Band Amplifier
174 modulator 35
147
gated Amplification.
voltmeter DC 166 monitor AM
Balanced 179 receiver regenerative -wave All
B 105 -failure carrier Alarm,
27 amplifier Acc
126 bridge) wien 157 adapter tracer signal
128 villard 154 tracer signal /RF
116 coil tickler 128 ) Villard oscillator)
128 -powered sun 126 bridge) Wein ( oscillator
124 shift phase 116 (
feedback) tickler oscillator
117 Hartley 128 -powered) sun ( oscillator
122 Franklin 124 -shift)phase ( oscillator
120 pitts col 117 Hartley) ( oscillator
oscillator Audio 122 (
Franklin) oscillator
31 mixer 120 (
Colpitts) oscillator
87 relay -actuated 31 mixer
Audio 87 relay -actuated
105 gate AND AF
166 monitor modulation Amplitude 157 tracer signal
80 113 (
video -polarity) dual output
28 AGC with 170 -current constant
22 (
-gain) high -stage 2 Adapter
52.154 ) notch (slot 157 probe
18 -stage single 40.42 filter low-pass
69 -type) transmitter ( RF 44 filter high-pass
71 MHz) 100 ( RF Active
66 RF 157 adapter voltmeter
77 regenerative 83 relay RF
42 low-pass Hc-tuned 162 detector null
19 Hc-coupled Ac
71 RF push-pull A
Index
Carrier -failure alarm 105 -input audio mixer 31
Cascade 22 -MOSFET phase inverter 33
Cathode follower equivalent 25 -polarity DC voltmeter 149
Center -zero DC voltmeter 149 -polarity output adapter 113
Channel
N 11 E
12
Earphone amplifier 56
Charge detector 171
Electroscope 171
Checker. Lc ( wide range) 157
Code practice monitor
Eliminator. heterodyne 187
166
Emitter follower equivalent 25
Coincidence relay 91
Enhancement mode 13
Coil data
broadcast band 62 F
shortwave bands 179
Failure, carrier 105
Colpitts Feedback. negative 22
audio oscillator 120
FET
oscillator ( RF self-excited) 134
junction 11
Common -source amplifier 18
VS MOSFET 13
Constant -current adapter 170
Filter
Converter high-pass )active) 44
impedance ( DC) 113
low-pass ( active) 42
RF 189
Flip-flop 172
sine to square 163
Floating gate 17
Crystal Fm reactance modulator 133'
-controlled IF oscillator 144
Follower
oscillator ( Pierce ) 140
source 25
oscillator I standard I 138
source I Dc I 66
-type frequency standard 152
Franklin audio oscillator 122
Current Frequency
amplifier circuit 61
doubler 190
constant 170
standard. self-excited 149
Cutoff. high -frequency 40. 44. 142
Cw monitor 166 G
D Gain. source follower 27
Dc Galvanometer amplifier (DC) 64
amplifier 60 Gate
galvanometer amplifier 64 AND 105
relay ( zero current) 81 floating 17
signal inverter 110 OR 110
source follower 66 -protected MOSFET 14
voltage amplifier 62 Gated -on amplifier 35
voltmeter 145 Gated -off amplifier 38
voltmeter ( balanced) 147 Generator
voltmeter ( center zero) 149 audio ( tickler -type) 116
Degeneration 22 square -wave 163
Delay relay 100 tone ( Villard) 128
Delayed pull -in relay 100 tone) Wien bridge) 126
Depletion mode 12 H
Demodulator, light beam 177, 179 Hall network 187
Detection. null 46 Handling care. MOSFET 16
Detector Hartley
charge 171 audio oscillator 117
null (AC) 162 oscillator 77
proximity 95 Headphone
Distortion reduction 22 amplifier 56
Double -tuned IF amplifier 77 amplifier ( peaked) 56
Doubler, frequency 190 Heat
Dual excessive 17
-gate MOSFET 12 -operated relay 95

195
 196
134 Hartley) ( self-excited RF 13 enhancement
134 self-excited) Colpitts ( RF 12 depletion
128 multivibrator Mode,
144 self-excited) ( IF 184 RF
144 crystal) IF ( 31 Mixer
117 audio) ( Hartley 187 transmitter Miniature
77 Hartley 184 tuning
122 (audio) Franklin 163 light
190 /doubler Meter
138 standard) ( crystal
141 (
M
Pierce) crystal
120 (
audio) colpitts 187 transmitter -power
128 -powered)sun AF (
40 amplifier -pass
Oscillator
110 gate OR Low
110 gate OR
35 gating On 105 circuit AND
38 gating Off
Logic
0 163 (
sensitive) meter
93 relay -operated
51 circuit 177 receiver -beam
162 AC detector.
Light
46 detection 46 amplifier peak -tuned
Null 52 amplifier notch -tuned
54 Hc) ( amplifier 44 amplifier high-pass -tuned
52 Lc) ( amplifier 40 amplifier -tuned
Notch 87 relay AF -tuned
100 relay Noise 157 -range wide checker,
54 -T parallel
187 Hall
L
Network
22 feedback Negative
11 MOSFET -channelN 13 MOSFET VS
11 FET Junction
N
J
128 -coupled drain
172 bistable 33 phase
Multivibrator 110 signal DC
190 frequency Multiplier, Inverter
16 MOSFET Mounting. 98 relay Intrusion
13 FET junction vs 100 timer Interval
13 14 diodes Integrated
transconductance
13 symbols 29 amplifier ic for stage Input
12 structure 162 device measuring Inductance
16 precautions 113 DC) ( converter Impedance
13
155 tracer signal IF/HF
polarities
16 mounting 44 self-excited
30 amp) is for ( circuit input 144 crystal
16 care handling oscillator. IF
14 -protectedgate 74 -tuned single
28 amplifier /bipolar 77 regenerative
11 description 29 stage input
MOSFET 77 -tuned double
166 CW amplifier IF
166 AM
Monitor
193 reactance 27 AGC with amp Hybrid
174 balanced 44 amplifier High-pass
Modulator 20 amplifier -gain High
166 monitor Modulation 187 eliminator Heterodyne
 self-excited RF ( tickler) 128 Reducing distortion 22
sun -powered (RI') 140 Regenerative
tickler ( audio) 116 IF amplifier 77
villard 128 receiver (Bc) 179
wien bridge 126 receiver ( sw) 179
Output adapter. dual -polarity 113 Rejection bandwidth 52
Relay
P AC RF 83
P -channel MOSFET 12 audio -actuated 87
Parallel -T network 54
capacitance 98
Paraphase amplifier 33
coincidence 91
Pass heat -operated 95
high- 44 light -activated 93
low - 40. 42 noise -operated 100
Peak amplifier 49 RF ( sensitive) 85
Peaked -response amplifier 56
touch -plate 95
Phase zero -current 81
inverter 33 Resistor, source ( unbypassed) 22
-shift audio oscillator 124 RF
shifter, stepping 105
-actuated relay 83
shifter, variable 103 amplifier, general-purpose 66
Photocell amplifier. 100 MHz 71
and relay 93 amplifier, push-pull 71
demodulator 177. 179 amplifier ( transmitter -type) 69
Photoelectric relay 93 coils ( winding data) 62
Photographic light meter 163
colpitts oscillator ( self-excited)
Pickup 134
stray 17 mixer 184
supersonic 174 oscillator, self-excited ( tickler)
Pierce crystal oscillator 140 128
Plate oscillator, sun -powered 140
relay 81 relay ( AC) 83
Polarity. MOSFET 13 self-excited oscillator 134
Positive feedback 77 /IF signal tracer 155
Probe. active 157
Proximity detector 98
Pulse inverter 110 S
Push-pull RF amplifier 71 S -meter 184
Self-excited
Q colpitts RF oscillator 134
Q -multiplier simulator 187 frequency standard 149
QRP transmitter 187 Hartley RF oscillator 134
IF oscillator 144
Sensitive
R relay 81
Reactance modulator 193 RF relay 85
Rc Shielding 17
-coupled amplifier circuit 19 Shifter
-tuned AF oscillator 128 phase 33
-tuned AF relay 89 phase ( variable) 103
-tuned high-pass amplifier 44 Sideband balanced modulator 114
-tuned high-pass circuit 46 Signal
-tuned low-pass amplifier 42 absorption circuit 49
-tuned notch amplifier 54 generator. audio ( tickler coil) 116
-tuned peak amplifier 49 inverter. DC 110
Receiver tracer adapter 157
al -wave 179 tracer. AF/RF 154
broadcast 179 tracer. IF/RF 155
light beam 177. 179 Silicon wafer 11

197
 198
meter center 116 -type tickler
64 -
Zero 122 Franklin
14 gates FET in Zeners 117 Hartley
120 colpitts
generator Tone
100 relay delay Time
62 coils of Winding 100 interval Timer,
126 oscillator AF bridge Wien 116 (
AF) oscillator -coilTickler
79 circuit amplifier video 45 relay Thermal
80 amplifier 95 relay -sensitive Temperature
Wideband 134 oscillator
11 silicon Wafer. self-excited capacitance
w 117 oscillator AF inductance
120 oscillator AF capacitance
-
-zero) center DC Tapped
149
DC
145 T
50 booster
157 Ac) ( adapter 100 sound Switch.
Voltmeter 174 pickup Supersonic
27 follower source gain, 184 converter Superheterodyne
62 Dc amplifier.
140 oscillator RF
Voltage oscillator audio
128
128 oscillator audio Villard -powered Sun
79 circuit amplifier Suboscillatory
77
50 amplifier Video 184 (RF) meter Strength
71 amplifier RF VHF 17 pickup Stray
103 shifter phase Variable 105 shifter phase -type Step
V 171 detector -charge Static
140 self-excited) ( frequency
22 resistor source Unbypassed 138 oscillator crystal
U Standard
163 generator -wave Square
DC
22 -gain)high ( amplifier stage 66
33 inverter phase MOSFET 25 follower Source
31 mixer audio input 100 switch Sound
- oscillator RF powered
Two 140
184 meter Tuning 128 oscillator audio powered
-
155 tracer RF/IF Tuned Solar
RC) ( amplifier
42 cut Treble 54
amplifier RF 52 Lc) ( amplifier
69
-power low Slot
187
Transmitter 74 amplifier IF tuned
13 MOSFET Transconductance. 18 amplifier stage
12 MOSFET gate
155 (IF/RF) signal
154 (AF/RF) signal 70 amplifier RF ended
-
Tracer Single
95 relay -plate Touch 124 oscillatorAF wave
126 bridge wien 163 converter -wave square to-
villard Sine
128
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ffootiritv