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Slyt 139
Slyt 139
Slyt 139
16
ESL1 tO ⎛ tO ⎞ ⎛ tOfsn ⎞
+ ESR1 + + ⎜ ESR1 + 1− KL
tO 2 × CO1 ⎝ 2 × CO1⎟⎠ ⎜⎝ m ⎟⎠
N1 = , and (1)
∆V
Vreq LB
− − RB
∆IO tO
1⎡ m t ⎛ ESR12 × CO1 × fs × n m ⎞ m 1 ⎤
⎢ − O + ⎜ ESR1 + + ⎟ KL + × ⎥
2 ⎢ CO1 × fs × n CO1 ⎝ m 4 × CO1 × fs × n ⎠ CO1 × fs × n KL ⎥
N2 = ⎣ ⎦, (2)
∆Vreq
− RB
∆IO
Continued from previous page decoupling might help in this situation by decreasing the
load-current slew rate applied to the output bulk capacitors.8
Design examples using different types of The other solutions are layout improvement to decrease
capacitors LB or choosing the different capacitors with the lower ESL.
The number of capacitors has been obtained for the
To illustrate the theoretical analysis, different types of “ideal” controller, assuming that it has equal current shar-
capacitors (aluminum electrolytic, OS-CON, specialty ing, the optimal control algorithm described earlier, and no
polymer, and ceramic) are compared in Table 1. delays. The practical implementation might require addi-
The design is satisfied for the following requirements, tional capacitors, but this analysis sets the target to
which are typical for a modern, high-end microprocessor: achieve and show the relationship between the number of
VIN = 12 V, VOUT = 1.5 V, IO(max) = 50 A, IO(min) = 0 A, capacitors; the number of channels; the switching frequency;
∆IO = 50 A, ∆Vreq = 100 mV, SRIO = 50 A/µs, RB = 0.4 mΩ, and the inductance value, including parasitics.
and LB = 0.2 nH. The curves are shown for 1-, 2-, 3-, and 4-channel inter-
It is obvious that, for this application, the output filter leaved converters (from top to bottom) for the aluminum
design depends primarily on load-current step-down tran- electrolytic (Figure 4), OS-CON (Figure 5), specialty poly-
sients. This is because the inductor current has a much mer (SP) (Figure 6), and ceramic (Figure 7) capacitors.
lower slew rate during the step-down transient than dur- Table 1 shows the required number of capacitors N2 and
ing step-up. Use of voltage positioning or droop compensa- the inductance value LO at different switching frequencies
tion techniques only verifies this statement. Therefore, the for this application. The following is a comparison summary:
following design example is focused on the load-current 1. The aluminum electrolytic and OS-CON capacitors
step-down transient. require significant additional high-frequency decoupling at
The output filter selection curves have been plotted a slew rate of 50 A/µs because N1 >> N2.
based on Equations 1 and 2 for different numbers of chan- 2. Interleaving for aluminum electrolytic and OS-CON
nels and different types of capacitors as a function of an capacitors does not significantly decrease the number of
equivalent output inductance LOeqv (Figures 4-7). To output capacitors; only its lowering of the input filter rip-
obtain the actual inductance value for each channel of the ple needs to be considered.
interleaved converter, the equivalent inductance needs to 3. The 2-channel interleaving is optimal for the SP
be multiplied by the number of channels. The step in the capacitors. They require much lower high-frequency
curves for the number of capacitors N2 identifies the decoupling at a 50-A/µs load-current slew rate.
boundary where the peak Vm2 does not exist (Figure 3). 4. The most significant effect of interleaving is that the
If, for the selected type of capacitor and equivalent induc- required number of ceramic capacitors drops in inverse
tor, the number of capacitors N1 related to the peak Vm1 proportion to the number of interleaved channels.
(Figure 3) is much greater than the number N2, parasitic Ceramic capacitors do not require additional decoupling at
ESL and LB are significant. The additional high-frequency a 50-A/µs load-current slew rate.
26 16
24 15 Curves N2
Curves N1 14 1 ch.
Number of Capacitors (N1 and N2)
22
Number of Capacitors (N1 and N2)
1 ch. 13 2 ch.
20 2 ch. 3 ch.
3 ch. 12
18 11 4 ch.
4 ch.
16 10 Curves N1
14 Curves N2 9 1 ch.
1 ch. 8 2 ch.
12 2 ch. 7 3 ch.
10 3 ch. 4 ch.
4 ch. 6
8 5
6 fs = 200 kHz/channel 4 fs = 200 kHz/channel
4 3
2
2
1
0 0
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
Equivalent Inductance L Oeqv (µH). L O = n x L O eqv
. Equivalent Inductance LOeqv (µH). L O = n x L Oeqv.
18
40 80
Curves N2
Curves N2 1 ch.
35 1 ch. 70
2 ch.
2 ch. 3 ch.
30 3 ch. 60 4 ch.
4 ch.
25 50 Curves N1
Curves N1 1 ch.
1 ch. 2 ch.
20 2 ch. 40
3 ch.
3 ch. 4 ch.
15 4 ch. 30
5 10
0 0
0.05 0.075 0.1 0.13 0.15 0.17 0.2 0.22 0.25 0.27 0.3 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0.11 0.12 0.13
Equivalent Inductance L Oeqv (µH). L O = n x L Oeqv. Equivalent Inductance LOeqv (µH). L O = n x L Oeqv.
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