New Product

SiZ920DT
Vishay Siliconix

Dual N-Channel 30 V (D-S) MOSFETs

FEATURES
PRODUCT SUMMARY
• TrenchFET® Power MOSFETs
VDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.)
• 100 % Rg and UIS Tested
0.0071 at VGS = 10 V 40a • Material categorization:
Channel-1 30 10.5 nC
0.0089 at VGS = 4.5 V 40a For definitions of compliance please see
www.vishay.com/doc?99912
0.0030 at VGS = 10 V 40a
Channel-2 30 29 nC
0.0035 at VGS = 4.5 V 40a APPLICATIONS
• CPU Core Power D1
PowerPAIR® 6 x 5
• Computer Peripherals
Pin 1
G1
5 mm
• POL
1 D1
2 D1 • Synchronous Buck Converter G1
D1 3 D1 N-Channel 1
4 MOSFET
G2 S1/D2 S1/D2
8 Pin 9
7 S2
6 6 mm G2
5
N-Channel 2
Ordering Information: MOSFET S2
SiZ920DT-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol Channel-1 Channel-2 Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 40a 40a
TC = 70 °C 40a 40a
Continuous Drain Current (TJ = 150 °C) ID
TA = 25 °C 22b, c 32b, c
TA = 70 °C 17b, c 26b, c
A
Pulsed Drain Current (t = 300 µs) IDM 70 120
TC = 25 °C 28a 28 a
Continuous Source Drain Diode Current IS
TA = 25 °C 3.6b, c 4.3b, c
Single Pulse Avalanche Current IAS 25 40
L = 0.1 mH
Single Pulse Avalanche Energy EAS 31 80 mJ
TC = 25 °C 39 100
TC = 70 °C 25 64
Maximum Power Dissipation PD W
TA = 25 °C 4.3b, c 5.2b, c
TA = 70 °C 2.8b, c 3.3b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e 260

THERMAL RESISTANCE RATINGS

Channel-1 Channel-2
Parameter Symbol Typ. Max. Typ. Max. Unit
Maximum Junction-to-Ambientb, f t  10 s RthJA
23 29 19 24
°C/W
Maximum Junction-to-Case (Drain) Steady State RthJC
2.5 3.2 1 1.25
Notes:
a. Package limited - TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W for channel-1 and 55 °C/W for channel-2.

Document Number: 63916 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com

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 New Product

SiZ920DT
Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
VGS = 0 V, ID = 250 µA Ch-1 30
Drain-Source Breakdown Voltage VDS V
VGS = 0 V, ID = 250 µA Ch-2 30
ID = 250 µA Ch-1 34
VDS Temperature Coefficient VDS/TJ
ID = 250 µA Ch-2 31
mV/°C
ID = 250 µA Ch-1 - 5.2
VGS(th) Temperature Coefficient VGS(th)/TJ
ID = 250 µA Ch-2 - 6.1
VDS = VGS, ID = 250 µA Ch-1 1.2 2.5
Gate Threshold Voltage VGS(th) V
VDS = VGS, ID = 250 µA Ch-2 1 2.2
Ch-1 ± 100
Gate Source Leakage IGSS VDS = 0 V, VGS = ± 20 V nA
Ch-2 ± 100
VDS = 30 V, VGS = 0 V Ch-1 1
VDS = 30 V, VGS = 0 V Ch-2 1
Zero Gate Voltage Drain Current IDSS µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-1 5
VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-2 5
VDS 5 V, VGS = 10 V Ch-1 20
On-State Drain Currentb ID(on) A
VDS 5 V, VGS = 10 V Ch-2 25
VGS = 10 V, ID = 18.9 A Ch-1 0.0059 0.0071
VGS = 10 V, ID = 20 A Ch-2 0.0025 0.0030
Drain-Source On-State Resistanceb RDS(on) 
VGS = 4.5 V, ID = 16.9 A Ch-1 0.0074 0.0089
VGS = 4.5 V, ID = 20 A Ch-2 0.0029 0.0035
VDS = 10 V, ID = 18.9 A Ch-1 66
Forward Transconductanceb gfs S
VDS = 10 V, ID = 20 A Ch-2 140
Dynamica
Ch-1 1260
Input Capacitance Ciss Channel-1 Ch-2 3600
VDS = 15 V, VGS = 0 V, f = 1 MHz
Ch-1 260
Output Capacitance Coss pF
Ch-2 660
Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-1 115
Reverse Transfer Capacitance Crss
Ch-2 305
VDS = 15 V, VGS = 10 V, ID = 18.9 A Ch-1 22.3 35
VDS = 15 V, VGS = 10 V, ID = 20 A Ch-2 60 110
Total Gate Charge Qg
Ch-1 10.5 16
Channel-1 Ch-2 29 51
VDS = 15 V, VGS = 4.5 V, ID = 18.9 A nC
Ch-1 5.1
Gate-Source Charge Qgs
Ch-2 10
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 20 A Ch-1 2.8
Gate-Drain Charge Qgd
Ch-2 9.5
Ch-1 0.3 1.6 3.2
Gate Resistance Rg f = 1 MHz 
Ch-2 0.1 0.6 1.2
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.

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 New Product

SiZ920DT
Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Dynamica
Ch-1 15 23
Turn-On Delay Time td(on) Channel-1 Ch-2 30 60
VDD = 15 V, RL = 1.5 
Ch-1 18 30
Rise Time tr ID  10 A, VGEN = 4.5 V, Rg = 1 
Ch-2 35 70
Ch-1 15 23
Turn-Off Delay Time td(off) Channel-2
VDD = 15 V, RL = 1.5  Ch-2 35 70

tf ID  10 A, VGEN = 4.5 V, Rg = 1  Ch-1 10 20

Fall Time
Ch-2 12 25
ns
Ch-1 4 8
Turn-On Delay Time td(on) Channel-1 Ch-2 12 25
VDD = 15 V, RL = 1.5 
Ch-1 11 25
Rise Time tr ID  10 A, VGEN = 10 V, Rg = 1 
Ch-2 12 25
Ch-1 18 30
Turn-Off Delay Time td(off) Channel-2
VDD = 15 V, RL = 1.5  Ch-2 35 70

tf ID  10 A, VGEN = 10 V, Rg = 1  Ch-1 8 16
Fall Time
Ch-2 10 20
Drain-Source Body Diode Characteristics
Ch-1 40
Continuous Source-Drain Diode Current IS TC = 25 °C
Ch-2 40
A
Ch-1 70
Pulse Diode Forward Currenta ISM
Ch-2 120
IS = 10 A, VGS = 0 V Ch-1 0.8 1.2
Body Diode Voltage VSD V
IS = 10 A, VGS = 0 V Ch-2 0.8 1.2
Ch-1 17 30
Body Diode Reverse Recovery Time trr ns
Ch-2 36 70
Channel-1 Ch-1 10 20
Body Diode Reverse Recovery Charge Qrr IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C nC
Ch-2 36 70
Ch-1 10
Reverse Recovery Fall Time ta Channel-2
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Ch-2 20
ns
Ch-1 7
Reverse Recovery Rise Time tb
Ch-2 16
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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 New Product

SiZ920DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

70 5

VGS = 10 V thru 4 V

56 4
ID - Drain Current (A)

ID - Drain Current (A)

42 3

TC = 25 °C
28 VGS = 3V 2

14 1
TC = 125 °C

TC = - 55 °C
0 0
0 0.5 1 1.5 2 0 0.6 1.2 1.8 2.4 3
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.0100 1800
RDS(on) - On-Resistance (Ω)

0.0085 1350
C - Capacitance (pF)

VGS = 4.5 V Ciss

0.0070 900

VGS = 10 V
0.0055 450
Coss

Crss
0.0040 0
0 14 28 42 56 70 0 5 10 15 20
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

10 1.8
VGS = 10 V
I D = 18.9 A ID = 18.9 A
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)

8
1.5
VDS = 15 V
VGS = 4.5 V
6
VDS = 7.5 V
1.2

4 VDS = 24 V

0.9
2

0 0.6
0 5 10 15 20 25 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

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 New Product

SiZ920DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

100 0.02

ID = 18.9 A

RDS(on) - On-Resistance (Ω)

0.015
TJ = 150 °C
IS - Source Current (A)

10

0.01 TJ = 125 °C

1 TJ = 25 °C TJ = 25 °C
0.005

0.1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

2.1 100

80
1.8

60
Power (W)

ID = 250 μA
VGS(th) (V)

1.5

40

1.2
20

0.9 0
- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (°C) Time (s)

Threshold Voltage Single Pulse Power

100

Limited by RDS(on)* 100 μs

10
ID - Drain Current (A)

1 ms

10 ms
1
100 ms
1s
10 s
0.1
DC
TA = 25 °C BVDSS Limited
Single Pulse
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient

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 New Product

SiZ920DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

65

52

ID - Drain Current (A)

39
Package Limited

26

13

0
0 25 50 75 100 125 150
TC - Case Temperature (°C)

Current Derating*

50 2.5

40 2.0

30 1.5
Power (W)

Power (W)

20 1.0

10 0.5

0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TC - Case Temperature (°C) TA - Ambient Temperature (°C)

Power, Junction-to-Case Power, Junction-to-Ambient

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

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 New Product

SiZ920DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:
0.1
PDM
0.1
0.05 t1
t2
t1
1. Duty Cycle, D =
0.02 t2
2. Per Unit Base = R thJA = 65 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
0.0001 0.001 0.01 0.1 1 10 100 1000
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Effective Transient

1
Thermal Impedance

Duty Cycle = 0.5

0.2

0.1
0.05
0.02

Single Pulse
0.1
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

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 New Product

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Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

100 20
VGS = 10 V thru 4 V

80 16
ID - Drain Current (A)

VGS = 3 V

ID - Drain Current (A)

60 12
TC = 25 °C

40 8

TC = 125 °C
20 4

TC = - 55 °C
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.0032 5000

0.0030
4000
VGS = 4.5 V Ciss
RDS(on) - On-Resistance (Ω)

C - Capacitance (pF)

0.0028
3000

0.0026

2000
VGS = 10 V
0.0024
Coss
1000
0.0022 Crss

0.0020 0
0 20 40 60 80 100 120 0 5 10 15 20 25 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

10 1.8
ID = 20 A ID = 20 A
VDS = 7.5 V
RDS(on) - On-Resistance (Normalized)

1.6
8
VGS - Gate-to-Source Voltage (V)

1.4
VGS = 10 V, 4.5 V
6
VDS = 15 V
VDS = 24 V 1.2

4
1.0

2
0.8

0 0.6
0 10 20 30 40 50 60 70 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

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 New Product

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CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

100 0.012
ID = 20 A

0.010

RDS(on) - On-Resistance (Ω)

IS - Source Current (A)

10 TJ = 150 °C 0.008

0.006

TJ = 25 °C
1 0.004 TJ = 125 °C

0.002
TJ = 25 °C

0.1 0.000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

2.2 100

2.0
80
1.8

60
Power (W)
VGS(th) (V)

1.6

1.4
40
ID = 250 μA
1.2
20
1.0

0.8 0
- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000
TJ - Temperature (°C) Time (s)

Threshold Voltage Single Pulse Power

1000

Limited by RDS(on)*

100
100 μs
ID - Drain Current (A)

10 1 ms

10 ms
1
100 ms
1s
10 s
0.1 TA = 25 °C
Single Pulse DC

BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient

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 New Product

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CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

160 100

140
80
120
ID - Drain Current (A)

100 60

Power (W)
80
40
60
Package Limited
40
20
20

0 0
0 25 50 75 100 125 150 25 50 75 100 125 150
TC - Case Temperature (°C) TC - Case Temperature (°C)

Current Derating* Power, Junction-to-Case

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

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 New Product

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Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:

0.1 PDM
0.1
0.05 t1
t2
t1
1. Duty Cycle, D =
t2
0.02 2. Per Unit Base = R thJA = 55 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
0.0001 0.001 0.01 0.1 1 10 100 1000
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Duty Cycle = 0.5

Normalized Effective Transient

0.2
Thermal Impedance

0.1

0.05
0.02
Single Pulse

0.1
0.0001 0.001 0.01 0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63916.

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Disclaimer

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Revision: 08-Feb-17 1 Document Number: 91000