j BTW24 SERIES

--------------------------------------------------------'

THYRISTORS

Silicon thyristors in metal envelopes, intended for general purpose single-phase or three-phase mains
operation.
The series consists of reverse polarity types (anode to stud) identified by a suffix R:
BTW24-600R to 1600R.

QUICK REFERENCE DATA

BTW24-600R 800R 1000R 1600R

Repetitive peak voltages
VDRM = VRRM max. 600 800 1000 1600 V

Average on-state current IT(AV) max. 35 A

R.M.S. on-state current IT(RMS) max. 55 A
Non-repetitive peak on-state current ITSM max. 800 A
Rate of rise of off-state voltage
that will not trigger any device dVD/dt < 200 V/p.s
On request (see ordering note on page 4) dVD/dt < 1000 V/p.s

MECHANICAL DATA Dimensions in mm

Fig. 1 TO-103.

1-----------155/145 --------1

20 maXl
r 4/3
M8x 1,25 I

L==rl

r~~nOde
45 min leads I
:
19 nom ---.I
I
14/13 -t_*_t----- at right Qngles---~·I
o 3i.. 3L..a

I. 165/155

Net mass: 46 9 Supplied with device: 1 nut, 1 lock washer

Diameter of clearance hole: 8,5 mm Nut dimensions across the flats: 13 mm
Torque on nut: min. 4 Nm (40 kg cm)
max. 6 Nm (60 kg cm)

'I April 1978

___B_T_W_2_4_S_E_R_IE_S_Jl_________________________________
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)

Anode to cathode

Non-repetitive peak voltages 8TW24-600R 800R 1000R 1200R 1400R 1600R

(t ~ 10 ms) VDSMIVRSM max. 600 800 1000 1200 1400 1600 V
Repetitive peak voltages V DR MIV R RM max. 600 800 1000 1200 1400 1600 V
Crest working voltages VDWMIVRWM max. 400 600 700 800 800 800 V*

Average on-state current (averaged over

any 20 ms period) up to T mb = 85 °C 'T(AV) max. 35 A
R.M.S. on-state current 'T(RMS) max. 55 A
Repetitive peak on-state current 'TRM max. 450 A
Non-repetitive peak on-state current; t = 10 ms;
half sine-wave; Tj = 125 0C prior to surge;
with reapplied V RWMmax 'TSM max. 800 A
12 t for fusing (t = 10 ms) 12 t max. 3200 A 2 s
Rate of rise of on-state current after triggering
with IG = 500 mA to 'T = 100 A; dlG/dt = 1 A/p.s dlT/dt max. 300 A/p.s
Rate of change of commutation current see Fig. 14

Gate to cathode
Reverse peak voltage VRGM max. 10 V
Average power dissipation (averaged over
any 20 ms period) PG(AV) max. 1W
Peak power dissipation PGM max. 5W

Temperatures
Storage temperature T stg -55 to + 125 °C
Junction temperature Tj max. 125 °C

THERMAL RESISTANCE
From junction to mounting base Rth j-mb 0,6 °C/W
From mounting base to heatsink Rth mb-h 0,2 0C/W
Transient thermal impedance (t = 1 ms) Zth j-mb 0,04 0C/W

* To ensure thermal stability: Rth j-a < 1 0C/W (d.c. blocking) or < 2 °C/W (a.c.). For smaller
heatsinks Tj max should be derated. For a.c. see Fig. 4.

2 April 19781 (
Thyristors J BTW24 SERIES

- - - -
CHARACTERISTICS
Anode to cathode
On-state voltage
'T = 100 A; Tj = 25 °C VT < 1,9 V *
Rate of rise of off-state voltage that will not trigger
any device; exponential method; Vo = 2/3 VORMmax;
Tj = 125 0C dVo/dt < 200 V/IlS
Reverse current
VR = VRWMmax; Tj = 125 °C 'R < 10 mA
Off-state current
Vo = VOWMmax; Tj = 125 °C 10 < 10 mA
Latching current; Tj = 25 °C 'L < 300 mA
Holding current; Tj = 25 0C 'H < 200 mA

Gate to cathode
Voltage that will trigger all devices
VO=6V;Tj=25 0 C > 2,5 V
Voltage that will not trigger any device
Vo = VORMmax; Tj = 125 °C < 200 mV
Current that will trigger all devices
V 0 = 6 V; Tj = 25 °C > 100 mA

Switching characteristics
Gate-controlled turn-on time (tgt = td + t r ) when
switched from Vo = VOWMmax to 'T = 100 A;
IGT = 150 mA; dlG/dt = 1 A/IlS; Tj = 25 °C typo 2 IlS
typo 1 IlS

t
IT

- t d - t,
--tgt-

IGT

o .!-+.....L'-c:........:..._ _ _ _- " - -

Fig. 2 Gate-controlled turn-on time definitions.

* Measured under pulse conditions to avoid excessive dissipation.

April 1978 3
 CHARACTER ISTICS (continued)
Circuit-commutated turn-off time when switched
from IT = 30 A to VR ~ 50 V with -dlT/dt = 30 A/l1s;
dVD/dt = 100 Vll1s;
typo 140 I1s
Tj = 125 0C
< 200 I1S
Tj = 25 °C < 100 Ils

1 _ - - tq - - - . 1 reapplied VOM

Fig. 3 Circuit-commutated turn-off time definition.

OPERATING NOTE
Switching losses in commutation
For applications in which the thyristor is forced to switch from an on-state current ITRM to a high
reverse voltage at a high commutation rate (-dIT/dt), consult Fig. 14 (nomogram) to find the increase
in total average power. This increase must be added to the loss from the curves in Fig. 4.

ORDERING NOTE
Types with dVD/dt of 1000 V IllS are available on request. Add suffix C to the type number when
ordering; e.g. BTW24-600RC.

4 April1978~ (
 Thyristors j BTW24 SERIES

- - -
100
n "
1_
condo
angle
form
factor d.c.
,
interrelation between
the power (derived
7Z59351.2

from the left hand graph)

65

--J aa = 30 0
60 0
a=4
2,8
J \ and the max. allowable

p
IT(RMS)
a=-- 90 0 2,2 1/ \ temperatures

(W)
IT(AV) 120°
180°
1,9
1,6
J \. 1\ \ 80
II \ \ \~
\
,
1,6 I ~ \Ss'
1-r9 J 1 \. \ \%
'I \~\\
50
2,2/,I{
2,81 VII
J1/1II V
/
I

" ", ~ ~
'\
\~-
\
\
~U'
110

-t-J 0
~o
95

, ,, ,
a=4
ill ) ,{sl\. 1\ \~
I"JVI rill
If/, ifill '/ I\. 1\1\ 110
Jl/h rJ) \ 1\'\
~v
"- ~
" ".~ \' \\ ,,~
,~
"l~
o ITI 125
a 25 50 75 a 50 100 150
IT(AV) (A) Tamb(oC)

Fig. 4.
7Z62015.1
1000
\ maximum permissible non-repetitive
~S(RMS) \ r .m.s. on state current based on
(A)

750
\
\ -; ITSM
L---->i- -=--=
1TSM
sinusoidal currents (f::: 50 Hz)

IV\--n IT.S(RMS)
'\
, time
with reapplied VRWM max

"-
500 "'-
"-.....,
"' ......
.... T j ::: 125 °c prior to surge
250
"'" ............ r-.....

-- --
........
--......
- ..
a
10- 3 10- 2 10- 1 duration (s) 10

Fig. 5.

"I ( April 1978 5

BTW24 SERIES

4
l_ _ __ 7Z72550
300
7Z72555

IGT
(mA)

3 200
~
I\.
'" " " ,,
min
I'-

2
'"
"" 100
"
.......
"
I...... ..... min
.....
.....
....
" I'

1 o
-50 o 50 100 150 -50 o 50 100 150
Tj (OC) Tj (oC)

Fig. 6 Minimum gate voltage that will trigger all Fig. 7 Minimum gate current that will trigger all
devices plotted against junction temperature. devices plotted against junction temperature.
7Z620132
600 I I I I I
t- - - T j ==25 0C II I I
t - - - T ·==1250C I
t- J II
II
I!/
.I
J
400 I! I
'I
I J
'I
I I It-- >- max_I-
I{ 1-- 'T
I VT=~
,/ I
typ
II I
VTI 'I
200 '/ I
I 1/
I rl
,/ "
IjJ

I
J!!.
1
,
~
'L

o -~~ Fig. 8.
o 2,5 V T (V) 5

6 April 197BI (
 J
Thyristors

- - -
BTW24 SERIES

1261176 Z61175
1500 max. rate of rise of off-
max, rate of rise of off-
state voltage that will state voltage that will
not trigger any device not trigger any device
2000 dVo (exp. method) plotted
(exp. method) plotted
dVo against junction temp. dt against applied voltage
dt (V/lJs) ~ I I I
1\ I I I I
(V!fl s ) \: I
~ I I
1500 1000
\ Tj -125°C -,--+--
\

\
, \

,
1000
~
, 500
,
1,\
I\. ,
500 "- ~
" '\ ..... :....
.....
.... 1-0.

so so VOM (Ofo) 100

VORMmax

Fig. 9. Fig. 10.

7Z62016

Zthj-mb
(OC/W)
.....
"",
1 V
~

"",10-

2
'/
~
L;'"

10 - 4 10 - 3 10 - 2 time (5) 10

Fig. 11.

'I (APril 1978 7

BTW24 SERIES

300
l_ _ __ 7Z66847
300 7Z66846

I I
=120~l Th =35 °c Th=550C
IO(RMS) r-1p
(A) - - ... ""r--
IO(RMS)
(A)
- 40
~""
!o... I--tp =20ms

200
100 ~ 200 t:::::~~
200
L"\ i--- 1-100
r- ...
"'-
400 ~~ ~~
L--- 1- 200

1\ -..:::: ~
Is
2 \
I'~
400
Is - ~
~ I'\.
M
100 100 2
4
" 4
1\

o O~--~~~~~~--~~~~~

1 10 0(%) 100 1 10 0(%) 100

300
7Z66848 70 r -________________-r~_.7~Z6~70~3~3~
max. power loss versus con- 1-+-+-+--+-+--+--1
p duction angle; device under
0
Th =85 C (W) intermittent operating con-
IO(RMS) ditions valid for curve·s
60 Th =35 °C, 55 °C and 85 0C f---i>A--+-+-+-+--I
(A)
',/
v
v
200

---
-tp =20ms
~
40 v
0° 200°
---t40- ~I'-I'-
-100 ~ conduction angle
100
-'20d ~ ~"
-400
............ ~ls
I r:::: ~~~
l""
2

fMM-
. ~"J
4

I.____T_II "'t,,,,,,
o
1 10 0(%) 100

Fig. 12 Intermittent overload capability of two BTW24 thyristors in anti-parallel connection in a

single phase a.c. control circuit (e.g. welding); conduction angle: 360 0 .

8 April 19781 (
Thyristors

- - - -
J BTW24 SERIES

NOMOGRAM 7Z620141
I~ II I ) V J
I 100' I 'c::, J I V II
1
" I" 200 &P~A
f4-~~ V
H-S0 II
I'..
300 500 ~lr- C5 ~c:s-)
11' I".
~~~~
,,
I i' I\. S
dI I
d t =20A/j.ls
t"'-
i'
I' I'

I\. ,
1\, :::..QJ 1/
II )
If I
I)
1/

I'r-., " ..... "' I' 1\ I

I't--. r.... 1\.1\ 1\.\ II 1/ 1/1/
r-. j j
r-. l\\ III/
i" "" I' I\' ., I/~

...... '" ...... ~ ~

~\
~
JI/, r/
IJfO

i"~
~" ~
J,.
r+-ITRM(A)
I

r
,
ITtlilTRM
H+,
500 4 3 _1-100_ 1-1- 1° f .-e--
9°,+ 1- 1 9°1-1-1-?9° - r-. -r-_ r- 50Hz '-
I
I ,
I\. 1'0...
r-...
..........
~ ....
r-_ -I.-
10O-I-r-
I definition: 10 , ...... .... ~

,
i"
200- f-f-
I
--"1
I
dI 1/2ITRM
dt=~6t~ ~P(A~) 1\ 1'0...
t
r-... I
-.16th.- I (I~) 20 ,1kHz f-f- ~~9°, I
T1

Fig. 13 Power loss ~P(AV) due to switching-on; Tj = 125 oC; IG = 500 mA; dlG/dt = 1 Alp.s.

, "
7Z66849

~V
" I.~.l y / V /
1
1100
....... ' - - \hod /

~ ~ 50
..... , '\ ~1/
~
~ ~
V ~ V
l/

ff.: "- \.
~~t7)~~~
'1:3
1/
~r--
~
.~ ......... i'oo.
"l '
]".. ,......, 'r-.,.
\.
, V V l/f/
dI.l
--=10 A/j.ls
...... r---. 1'0...... t..... ~ \ J V ~V
dt I ""'1'-- ~ i'-- ~ I\. j~ ~
1""- ~
r--.. r.::::: ~[\ ~~
-~ ~ ~
50 J I 100 50 ....
~'" ~
l"-I--.
° f== SOHz-
I-ITRM(A)
~ .......... ,......, -I"- 1"-..... ~~
['\ .......... l"- t-. ~1001

NOMOGRAM: poWer loss 6P(AV)

['\
~
"" ]""..
"-
]""..1-0...
I"- r-

due to switching off; T j = 125 °c 25 ]"..<00

1 ['\ ~
ITRM ['\ r-.;,.
f-~P(AV)
'y dI/dt ['\ "'" r"
II ~~ ~
t
IRRM V
150 l'\

Fig. 14.

9
BTW24 SERIES

7Z67025
300
envelope of average _10

~m
10 ,O~=:'
(A) "-
" "- "- .....
for safe operation at a given
temperature, the average cur-
rent envelope of successive
200 cycles (see drawing above) must lie within the
~
I"..
...... "'lj""""'/'0.6 ~6S region bounded by the curve shown below for
that temperature

....... I 0 I
~I 0rp I
i:'o.. I """ ~.iO.l"t. 1
\'00.. ........... 8S I i' 0 oS
...... ~ , 00 100.. 'tCi.l"t .
I'" J""'oo.: .......... J'W-)
100 I i""... ..........
l"-
......... 1050 r-- ....
1'---0 I--
-I-~

-
o
10- 2 10- 1 1 10 time (s)

400

10
(A)

~====:=~::=:=::::::=====:==:=:=:::::~
,""eo,
r -__~__-r-r-r~,,~____r-~~-T~~~____________________________~7Z~6~7~02~3~
envelope of average

~mJ
'0

for safe operation at a ;ven

_'0

300
t---+--+--+~-H+++---I--+-+-++l-+-l-t temperature, the average cur-
rent envelope of successive
t------il.---+--+-+-+"I..H+---I---+--+-+-+-H-t-I cycles (see drawing above) must lie within the
t---+-""k:--+-+--H++~--1' -t---+-+-+-H-IH region bounded by the curve shown below for
t---+---+-~~~++~"'-~j~~ +-r+++t--ili_a_tt_e~m_p_er~a~tu_rre-r,,~~_-'r--r~-r.-rrrl
....... , ~lJ~6
200 f'l.l S 00
t-----+----l--++++++-I- ---'I~f___, _r:H-.
............... (P.l"iO.l" t. '-+-++-H-IH--t---+-+-+-+-t-t-H
--+~-----F85~oC
1--_+--+-+-+-l,..-H+t-_--t_....... ............ 0 oStq.l"t.
i"-.. 1'1'- r-......... J'W-)
~++---+--I--+-~-+-HH

100 I -"'1"'-- - ... 1'"

r--- __~5 0c

o
10- 2 1 10 time (s)

Fig. 15 Limits for starting or inrush currents.

10 April 19781 (