GA GATE

Graduate Aptitude Test in Engineering

Electronics and Communication Engineering onics Communica

Electronic Devices Electronic Devices and Cir Circuits

 ELECTRO E ONIC DEVIC AND CI CE IRCUITS-T THEORY Introduct tion: *Semicon nductor Itsamater rialwhosecon nductivityisinbetweenm metalandinsu ulator.Germa anium (Ge)ands silicon(Si)are emostcomm monlyusedsemiconductorinVLSItechn nology Orbitalstr ructureofSi2,8,4so othereare4e electronsino outermostbandandready ytoformbonding. ForGeorbitalstructurewillbe2,8, ,18,4andthu uselectronsaretheretofo ormbonding. eraturemoreandmoreele ectronsgetfr ree.Soinotherwordmate erial Asweincreasetempe Becomem moreandmoreconductive e;but R Henceastemperatureincreases{T T,}, Resistancedecreases( (R,} on Applicatio Allwafers sonwhichcir rcuitsareinfa abricatedare emadeupofs siliconanothe erreasonofu usingsiliconis thatitisa abundantinn nature
si

1 onductivity co

Si mationofsilic con Bondform

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DEVI ICE MODE ELLING - Q QUESTION NS

ar ng sectional) dop with 10 /cm3 phosp ped phorous find 1) A Si-ba 0.1cm lon 100 m area (cross-s
2 17 1

current?( (neglect temp perature effe ect) n = 700cm 2 / vs ,q= 0 =1.6x 10 (a)1.5m mA (b)1.3m mA (c)1. .12mA (d A d)1
2

19

C ; applied volt tage is 10V

Resistivity
2

m 2) If mob bility due to impurity scat ttering is 1cm / v s and due to lattic 2cm / v s .what is d ce resultant scattering in material. n Mobilit ty
(a) 2cm / v s
2

(b) 1cm / v s )
2

5 (c) 0.5cm / v s
2

cm (d) 0.67c / v s
2

3) What i mobility at point x in fi is t igure below.

Mobilit ty

(a) 10 cm / v s
2

(b)100 cm / v s (
2

(c) )1000 cm / v s
2

(d)10000 cm / v s
2 16 3

cm and acce 4) A hypo othetical sem miconductor h having donor concentrati r ion( N d ) equ to 10 / c ual eptor
concentra ation ( N a ) 2 10 / cm .what is new electron and hole concen w d ntration.
16 3

IntrinsicandE ExtrinsicSilico on

0 (a) n0 = 104 / cm3

(c) p0 = 1016 / cm3

p0 = 1016 / cm3 m n0 = 1016 / cm3 m

(b) ( p0 = 1016 / cm3 (d) ( p0 = 104 / cm3

n0 = 104 / cm3 n0 = 104 / cm3

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 DEV VICE MODE ELLING SOLUTIONS S 1) SOLU UTION: (c)

= nqn (conductivit ty)

= 10 1.6 10
17 19

700 = 11.2

= 0.08928 = resisti ivity

R=

L
A

= 8928.57 7

I=

V = 1.12 2mA R

2) SOLU UTION: (d)

+ ..... + 1 =

n
1

Here n=2

1 1 = + = 1.5 1 2

= 0.67cm2 / v s m

3) SOLU UTION: (c) d = E

106 = = 1000cm2 / v s 3 10
4) SOLU UTION: (b)

Na > Nd
n0 = N a N d = 1016 / cm3
n0 p0 = ni 2

n0 = 104 / cm3

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