High Voltage

Review Article

Research progress of semiconductive eISSN 2397-7264

Received on 6th April 2019
Revised 6th September 2019
shielding layer of HVDC cable Accepted on 22nd October 2019
E-First on 20th January 2020
doi: 10.1049/hve.2019.0069
www.ietdl.org

Yanhui Wei1, Wang Han1, Guochang Li1,2 , Qingquan Lei1,2, Mingli Fu3, Chuncheng Hao1, Guanjun
Zhang2
1Instituteof Advanced Electrical Materials, Qingdao University of Science and Technology, Qingdao, People's Republic of China
2StateKey Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, People's Republic of China
3China South Power Grid International Co., Ltd, Guangzhou, People's Republic of China

E-mail: lgc@qust.edu.cn

Abstract: As an indispensable part of high-voltage direct current (HVDC) cable, the semiconductive shielding layer plays the
role of uniforming electric field in the cable. However, cable shielding materials >35 kV mainly rely on foreign imports in China,
which belongs to the technical weak issues in the field of electrical materials. At present, there are few systematic reports on
semiconductive shielding material of HVDC cable. In the work, the mechanisms of charge conduction and thermal conduction of
semiconductive material have been introduced. Effect of raw material, carbon black content and the second conductive filler on
the resistance characteristics of the semiconductive layer, the charge accumulation characteristics of the insulating layer and
the interface characteristics have been studied. A kind of semiconductive layer as a high voltage terminal charge emission
method has been proposed to study charge emission from the semiconducting layer to the insulation layer. This work can
provide theoretical guidance for the research of semiconductive shielding materials.

1 Introduction
High-voltage direct current (HVDC) cable as the key equipment of
constructing dc power grid has been widely used in underwater
power and city power [1–5]. The insulation layer and
semiconductive layer are the most important parts of dc cable.
Their performance directly affects the safe operation and lifetime
of the cable.
During the operation of cable, cross-linked polyethylene
(XLPE) cable insulation is subjected to electric field and thermal
field, space charges are easily accumulated inside the insulation
layer, resulting in the local electric field distortion. At the worst,
partial discharge or bulk breakdown may occur. Electrical
properties of insulation layer are affected not only by their own
material characteristics but also by the semiconductive layer.
Semiconductive shielding layer lies between the wire core and the
insulation layer, which can make the conductor and insulation layer
connect closely, reducing the interfacial gap between the wire core
and the insulation layer [6–8]. In addition, semiconductive layer
can effectively reduce the potential gradient and inhibit space
charge injection from the wire core to the insulation layer [9–13].
For the research and development of semiconductive shielding
material, it started in the 1950s and some countries made it
commercialisation in the early 1970s, such as Japan, the United
States and so on [14]. While, the research on semiconductive
shielding material is late in China, which started in the late last
century [15]. The demand for HVDC cable has been increasing
with the rapid development of HVDC transmission, and the
research and development of cable material is especially urgent in
China. At present, the semiconductive shielding materials above
35 kV are mainly imported from foreign companies and have not
yet been localised.
The semiconductive shielding layer has attracted more and
more attention in the last decade. Delpino et al. [16] and Fabiani et
al. [17] investigated effect of interface between insulation layer and
semiconductive layer on space charge characteristics in insulation
material. A symposium on ‘Research and development of high-end
cable materials’ was held by China Electrical Engineering Society
in 2017. Experts pointed out that the shielding and insulation
materials for HVDC cables belong to the technical weaknesses that
need to be broken through urgently [18]. Li et al. [19] from Xi'an
Jiaotong University published the review article in 2018, pointing
out that the research and development of HVDC cable shielding
materials are still at the initial stage and needs further and
systematic research. At present, there are few systematic reports on
semiconductive shielding material of HVDC cable.
In the paper, the charge conduction and thermal conduction
mechanism of semiconductive shielding layer have been
introduced. Further, the effects of raw material ratio, carbon black
type, and the second conductive filler, such as carbon nanotube on
the resistance characteristics, the charge accumulation
characteristics and the interface characteristics have been
discussed. Finally, a kind of semiconductive layer as a high-voltage
terminal charge emission method has been proposed.
2 Mechanism of charge conduction and thermal
conduction of semiconductive layer
The semiconductive layer for HVDC cable is mainly composed of
ethylene-vinyl acetate copolymer (EVA), polyethylene (PE) and
carbon black. Besides, crosslink agents, antioxidants and co-
linking agents need to be added in the preparation process [20–22].
The role of EVA is to improve the toughness of semiconductive
composites, and carbon black and PE is used to regulate the
resistivity of semiconductive composite. The resistivity of PE is
about 1014 Ω cm, but the resistivity of semiconductive composite is
required to be <103 Ω cm. Therefore, large numbers of carbon
black or other conductive fillers need to be added to polymer
matrix. In addition, PE is used to improve the interfacial
compatibility between the semiconductive layer and the insulation
layer composed of XLPE. The addition of conductive filler will
generally make the mechanical properties of the matrix worse. So
the proportion of carbon black and other ingredients in
semiconductive composite needs to be strictly controlled to meet
the requirements of its electrical, thermal and mechanical
properties. In addition, the electrical property of semiconductive
composite under high temperature should be matched with the
insulation layer, so as to meet the simultaneous extrusion process
of semiconductive layer and insulation layer.

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Fig. 1  Schematic diagram of charge conduction mechanism of
semiconductive layer
Fig. 2  Schematic diagram of electron thermal conduction mechanism of
semiconductive layer
2.1 Charge conduction mechanism
As for the conductive mechanism of semiconductive shielding
layer, the theory includes the conductive channel theory and the
charge hopping theory. The schematic diagram of the principle is
shown in Fig. 1.
For the conductive channel theory, the conductive network is
formed by the mutual contact of conductive carbon black particles
in the semiconductive shielding layer, and electrons will migrate in
the conductive networks. For the charge hopping theory is also
suitable for the insulation material. The conductive carbon black
particles are dispersed in the polymer matrix, and the particles
cannot directly contact each other, resulting in the non-direct flow
of electrons. When the voltage is applied, electrons can conduct by
thermally assisted hopping or tunnelling effect [23].
In the actual operation of XLPE cable, the conductive channel
theory and the charge hopping theory both exist because of the
problems of manufacturing technology and uniformity of
conductive particles. The role of conductive carbon black particles
and conduction efficiency are different due to the actual operating
conditions.
2.2 Thermal conduction mechanism
Semiconductive materials are divided into inorganic
semiconductive materials and organic semiconductive materials.
The thermal conductivity mechanism includes the phonon thermal
conduction mechanism and electronic thermal conduction
mechanism.
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Inorganic semiconductive materials mainly consist of
crystalline regions, which have neatly arranged molecular chains
and orderly lattices. Its thermal conductivity is mainly achieved by
lattice waves formed by phonon vibration. Since the phonon
interacts with electrons and ions in the process of propagation,
resulting in interfacial scattering, it is difficult to transfer between
irregular molecular chains with low crystallinity. The thermal
conduction of organic semiconductive materials is electronic
thermal conduction mechanism. There exists conjugate chain or
double bonds between molecules, such as benzene ring, and
electrons transfer between conjugate bonds to achieve thermal
conduction, as shown in Fig. 2. In the actual operation of XLPE
cable, the thermal conduction process is complicated, perhaps,
there is a coexistence of phonon thermal conduction process and
electronic thermal conduction process.
3 Study on semiconductive layer
Compared with the cable insulation material [19, 24–36], the
number of reports on semiconductive shielding material is few. At
present, the researches on semiconductive layer of HVDC cable
mainly focus on modification of the semiconductive composite and
the interface characteristics between semiconductive layer and
insulation layer.
3.1 Modification of semiconductive material
For semiconductive composite, polymer matrix swells with the
increase of temperature, which will break the conductive mesh
composed of conductive fillers, thus reducing the conductivity of
the material. Especially when the temperature is close to the
melting point of the matrix, a large portion of conductive mesh is
destroyed, presenting obvious positive temperature coefficient
(PTC) effect. The resistivity of semiconductive layer for XLPE
cables is generally <100 Ω cm at room temperature, but when the
temperature exceeds about 80°C, the resistivity rises dramatically
and presents PTC effect, which severely limits the maximum
operation temperature of cable. Hence, the main objective of
semiconductive material modification is to inhibit charge injection
and improve resistivity stability to suppress PTC effect. The related
researches mainly focus on effect of the filler ratio, type or second
conductive filler on resistivity properties of semiconductive
materials at high temperature, and effect of the above elements on
space charge accumulation properties in the insulation material. In
the study, the second conductive filler refers to the added
conductive particles, which is different from carbon particles in the
semiconductive composites. The representative research works are
shown in Fig. 3.
For the study of mixture ratio, Borealis studied the effect of
semiconductive material on the space charge accumulation in
extruded DC cables [37]. It was found that charge accumulation in
the insulation layer could be effectively reduced by changing the
ratio of different raw materials. At the same time, it was found that
space charge accumulation in the insulation layer could be reduced
by replacing traditional carbon black with acetylene carbon black.
Zhang et al. [38] studied the influence of EVA semiconductive
material filled with conductive carbon black on the space charge
injection in PE. They found that space charge injection gradually
decreases with the increase of carbon black filling rate.
For the study of carbon type B: studied the effect of
semiconductive materials on charge injection properties by
adjusting carbon black types and filling quantities. Besides, the
results show that electrode materials are one of the important
factors affecting space charge injection in insulation material [39].
Yin adopted six different kinds of semiconductive materials as the
contact materials, comparing space charge distribution in MgO/
XLPE nanocomposites [40]. The results show that types of carbon
in semiconductive materials have a great influence on space charge
accumulation in the insulation material.
For the study of the second filler, Dow and TD Delft found that
the addition of a small amount of multi-walled carbon nanotube
can effectively improve the volume resistivity stability of the
semiconductive material [41, 42]. Besides, the influence of
semiconductive layer on the insulation interface of space charge
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injection threshold has been investigated. The similar work was
done by Wonkwang University, they found a small amount of
carbon can effectively improve the electrical and thermal properties
of the semiconductive composites [43]. Fang [44] compared carbon
nanotubes with graphene to enhance the thermal stability of the
volume resistivity. The results show that the volume resistivity
stability of the semiconductive composite modified with graphene
is better than that of carbon nanotubes. While the comprehensive
property shows that carbon nanotube is more suitable for
semiconductive material.
In addition, we studied the relationship between materials ratio
and resistivity of semiconductive material and compared it with
Borealis commercial materials [45]. The experimental results are
shown in Fig. 4.
Fig. 4a shows that the resistivity of the semiconductive material
gradually decreases with the increase of carbon black content. It
can be found that the resistivity decreases rapidly from 20 to 25%,
and it becomes moderate and gradually tends to stability when the
carbon black content exceeds 25%. Fig. 4b shows the effect of
EVA content on resistivity of the semiconductive material with
different temperatures, the carbon black content is 25%. The
experimental results show that the addition of EVA has a
Fig. 3  Diagram of current research on modification of semiconductive
material
Fig. 4  Relation between material ratio and resistivity of semiconductive material [45]
(a) Relationship between carbon black content and resistivity, (b) Relationship between temperature and resistivity of semiconductive material with different EVA contents
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significant weakening effect on PTC effect, and the inhibition
effect of PTC is the best when the content of EVA is 30%.
The above researches show that the change of carbon black
content and type, as well as the addition of the second filler, can
effectively reduce the charge accumulation of the insulator layer
and improve the resistivity stability. For the actual application,
effect of filler types and contents on the comprehensive properties
of electrical, thermal, mechanical and processing technology need
to be further investigated.
There are many scholars who studied the peel-ability and
processing technology of the semiconductive layer. A small
amount of EPDM can improve peel-ability of semiconductive layer
[46]. Additives have a great influence on the peel-ability
performance, it was found that the amount of crosslinking agent
could be reduced by adding auxiliaries, thus peel-ability can be
improved [47, 48]. Besides, fillers have great influence on
mechanical properties of semiconductive composites. Dang studied
effect of MWNTs content on mechanical properties of EVA/CB-
MWNTs composite, the results show that the increase of MWNTs
content will reduce its dispersion, weakening the effect of MWNTs
on the improvement of mechanical properties. Wang studied
mechanical property of EVA/CB-graphene nanosheet (GNS)
composites, it was found that the mechanical property of composite
can meet the requirements of cable application at a reasonable ratio
of EVA/18%CB-1.5%GNS.
The mechanical properties of composites are related to the
dispersion and distribution of filler and the interfacial interaction
between filler and matrix. Therefore, it is necessary to select the
appropriate filler and determine the appropriate proportion in the
process so as to meet the requirements of the mechanical properties
of materials.
3.2 Interface characteristics between semiconductive layer
and insulation layer
For the interface characteristics between the semiconductive layer
and the insulating layer, the main purpose is to improve interface
smoothness, uniform electric field, reduce charge injection and
enhance interface breakdown voltage. The researches mainly focus
on the material modification, interface ageing properties and
interface space charge accumulation [16, 17, 49–52]. The
representative research works are shown in Fig. 5.
Interface condition is an important factor affecting charge
accumulation and breakdown property of insulation layer. Van der
Born D studied the ageing mechanism of the interface between the
semiconductive layer and the insulation layer under high voltage
[53]. In the experiment, a semiconductive needle was inserted into
the polymer to simulate the position of the electric field distortion
in HVDC cable. The results show that the field luminescence at the
tip of the semiconductive needle occurred before the generation of
the electric tree. Montanari, Laurent and Dissado have studied the
space charge characteristics of different combinations of insulating
layer and semiconductive layer by using pulse electroacoustic
(PEA) method. It has been verified that the interface between
3
semiconductive layer and insulation layer plays an important role
in reducing space charge accumulation in the insulating layer [54].
For the influence of modifier on interface smoothness, Yin et al.
[55] simulated the electric field distortion of the interface
morphology between semiconductive layer and insulation layer and
found that it will cause a great influence on the electric field
distortion. The electric field distortion could be reduced by
adjusting the particle size of carbon black and the depth of carbon
black particles entering the insulating layer. Li et al. [56] modified
the semiconductive layer with nanoscale lamellar modifier and
fabricated the double-layer film with the insulating layer, and
Fig. 5  Diagram of current research on interface characteristics between
semiconductive layer and insulating layer
Fig. 6  Schematic diagram of the electrode structures
(a) Traditional electrode structure metal–insulation–metal (M-I-M) [62], (b) Simplified cable electrode structure, metal–semiconductive–insulation–metal (M-S-I-M), (c)
Semiconductive layer electrode structure, semiconductive–insulation–metal (S-I-M)
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charge transport characteristics at the interface of the double layer
film were further studied. Wang et al.[9], Kurusu et al. [10] and
Azizi et al.[11] studied the semiconductive material modified with
GNS. The results show that GNS can reduce the content of
conductive filler and improve dramatically the smoothness of
semiconductive layer.
For the influence of carbon black on interface smoothness,
Yang et al. [57] studied the smoothness of acetylene carbon black
by changing the amount of acetylene carbon black. The results
show that the smoothness decreases with the increase of carbon
black content. Kjellqvist et al. [58] doped the modified furnace to
the semiconductive layer for medium-voltage cables, combining
with new cable manufacturing technology, as a result interface
smoothness and tensile strength were improved. Meng [59]
simulated the amount of interfacial injected charge when mass
fraction of carbon black was added. The results show that the
increase in carbon black content would increase the amount of
space charge injected from the semiconductive layer. The above
researches show that carbon nanotubes and graphene can
effectively improve the interfacial smoothness, but the addition of
fillers will bring dispersion problems in matrix.
4 Charge test methods for semiconductive layer
Space charge accumulation in the insulation layer is one of the key
problems that restrict the development of HVDC cables. It has
been experimentally studied that the modification of the
semiconductive shielding layer is beneficial to suppress space
charge accumulation in the insulation layer at the source.
At present, the widely used measurement methods for charge
properties are mostly aimed at the insulation material. The typical
electrode structure is ‘metal upper electrode–insulation material–
metal bottom electrode’, such as thermal stimulated current
measurement and space charge limited current measurement. There
are few testing methods specifically for the semiconductive
shielding layer. The typical device, PEA method has been widely
used to measure space charge behaviours in the insulation material
in the past two decades [60]. Its electrode structure is ‘metal upper
electrode– semiconductive layer–the insulation material– metal
bottom electrode’, and the role of semiconductive layer in the test
system is to match the sound impedance. In the study of the
modification of the semiconductive layer, PEA method is often
used to evaluate the charge inhibition of the modified
semiconductive material [37]. Although the method could not
distinguish the injected charge from the metal and the
semiconductive layer into the insulation layer separately.
At present, there is no special test device aiming at the self-
charge emission of the semiconductive shielding layer for HVDC
cables. In the work, a method has been proposed to explore charge
emission behaviours of the semiconductive layer [61]. In the
method, the semiconductive layer is set to the high voltage
terminal, the structure is ‘semiconductive layer–the insulation
material–metal bottom electrode (S-I-M)’ [62]. The test method is
not only suitable for the modified semiconductive materials but can
also distinguish the charges from the metal electrode to the
insulation layer. Fig. 6 shows schematic diagram of the typical
electrode structures and new electrode structure.
For different electrode structures, the effect of electrodes on
charge characteristics in insulation materials are different, which
involves different interfaces [62]. The traditional electrode
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Fig. 7  Surface potential decay curves of the insulation material applied
voltage with different electrode structures [62]
structure of M-I-M are often adopted for the study of the insulation
material, the charge characteristic was affected by the interface of
‘M-I’, as shown in Fig. 6a. For HVDC cable, the structure is
complex, including the metal, the inner semiconductive layer, the
insulation layer, the outside semiconductive layer and the metallic
sheath. In the study, the cable structure was simplified as M-S-I-M,
as shown in Fig. 6b, since the inner shielding layer has great
influence on the charge properties. In order to study the self-charge
emission properties of the inner shielding layer, a new structure of
S-I-M has been designed, as shown in Fig. 6c.
In the method, a metal ring device is used to contact with the
semiconductive layer to make it produce equal potential. The
semiconductive layer becomes a high-voltage terminal so as to
realise the charge injection from the semiconductive layer to the
insulation layer. In order to achieve good contact between the
semiconductive layer and the insulation layer, a structure of
insulating cylinder made with polytetrafluoroethylene (PTFE)
material is used and placed directly above the semiconductive
layer, whose diameter is smaller than the metal ring device, and the
quality is the same as the metal top electrodes in Figs. 6a and b. To
eliminate the influence of charge injection from the metal ring
device, the insulation material directly below PTFE was selected as
the test region, as shown the blue region in Fig. 6c.
The charge injection properties in the insulation materials are
different for different electrode structures, and it can be reflected
by the surface potential after removing voltage. In the experiment,
the same XLPE with thickness of 300 μm were applied voltage
with 15 kV/mm for 30 min by three kinds of electrode structures,
M-I-M, M-S-I-M and S-I-M respectively, and then, the surface
potential was measured by the non-contact surface potentiometer,
the measured results as shown in Fig. 7.
It can be seen the initial surface potentials are obviously
different for different electrode structures, which reflects the charge
emission ability of different high voltage terminals. There exists
evidently charge emission phenomenon from the semiconductive
electrode, the initial voltage is about 1 kV. Meanwhile, the initial
voltage induced by the injected charges under M-I-M is large than
that of M-S-I-M, indicating that the semiconductive layer plays a
role in inhibiting charge injection.
5 Conclusion and prospect
In this paper, the research progress of semiconductive shielding
layer in HVDC cable has been discussed from the aspects of charge
conduction mechanism, thermal conduction mechanism, space
charge inhibition and interface characteristics. The influence of the
modification of the semiconductive shielding layer on the charge
accumulation characteristics in the cable insulation layer has been
analysed emphatically. A kind of semiconductive layer as a high
voltage terminal charge emission method has been proposed. It is
of great value to study the charge emission mechanism of the
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semiconductive layer and to evaluate the charge suppression effect
of the modified semiconductive materials.
The research of semiconductive shielding layer involves
multiple disciplines of high voltage, electrical insulation, surface/
interface physics, chemical synthesis and material preparation. It is
necessary to comprehensively improve its electrical, thermal and
mechanical properties from the aspects of the matrix resin, new
filler, and interface matching and processing technology, so as to
satisfy the application requirements of high-voltage grade dc
cables.
In future work, several key issues deserve attention. (i) Charge
emission mechanism, effect of semiconductive layer on charge
accumulation in the insulation layer is not detailed. (ii) Inhibiting
PTC effect, the resistivity property of the semiconductive layer at
high temperature should be studied so as to improve the working
temperature of HVDC cable. Potentially, PTC effect of the
semiconductive shielding layer limits the maximum operating
temperature of HVDC cable, which can't get to 90°C. (iii) Interface
matching of S-I, the change of physical and chemical properties of
the interface will affect the charge characteristics and dielectric
properties of the insulating layer, especially, interface matching at
high temperature.
6 Acknowledgments
This work was supported by the China Postdoctoral Science
Foundation (Grant No. 2018M642627), the National Natural
Science Foundation of China (Grant No. 51907095), the Shandong
Provincial Natural Science Foundation, China (Grant No.
ZR2019BEE036), and the National Engineering Laboratory for
Ultra High Voltage Engineering Technology (Grant No.
NEL201802).
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