BC548B TRANSISTOR DESING

Degree in Industrial and Automatic Electronic Engineering

Basics of Electronic Engineering

ULL

Course 2021/2022

Students:

Joel Peñaranda Román (Alu0101531397)

Carlos Ferrer Mendoza (Alu0101350981)

Date: 20/5/2022
 Memory

Introduction

A transistor is a device that regulates the flow of current or voltage over a circuit acting as a
switch and/or amplifier for electrical or electronic signals. A single-step amplifier. What we will
do in our case will be to take a transistor and transform it into an amplifier. The aim of the
practice is to create a single-step amplifier and that its point of operation in the dc load line (Q
Point) performs a maximum symmetrical path between the cutting and saturation regions. R1,
RC, RE and VCC must be determined. For the realization of the work the first thing we have
done is look for a transistor, because that is what they ask to us, and also because from there
we will get almost all the variables and equations for solving our problem. On the virtual
campus we can find the datasheets of the components and of the manufacturers are located.

After having all the variables (R1, RC, RE and VCC) calculated, we proceed to meet the
condition that they ask us at work, which is:

- Maximum gain in voltage (at medium frequencies) within the range 150 > Av > 20.

Figure 1

From this graph, we place the connector-emitter voltage at 5 volts because it is the one
recommended by the manufacturer for the other graphs. Then we draw the load line from
corner to corner and the point is where the lines intersect with the graph, we take it as Q
point, for that point Ic is 75 mA and Q point fell just above the curve of Ib = 350 μA. For Ic
equal to 0 A, the value of Vcc = 20 V and for Vcc = 0 V, Ic = 100 mA = 0.1 A.
 Figure 2

To calculate the base-emitter voltage, we draw a line of Icq = 75 mA and where the line
intersects with the manufacturer's line, we descend until verifying that Vbeq = 0.78 V.

We must use de figure 1 to calculate the hfe parameter and figure 2 to determinate hie.

hfe=[(ic2-ic1)/(ib2-ib1)] = [(82-68) mA/ (400-300) µA] = 140.

hie=[(Vbe2-Vbe1)/(ib2-ib1)] = [(0,79-0,77) V/ (400-300) µA] = 200 Ω.

The data we are going to use for this job is: Vcc=20 V; Vceq = 5V; Icq = 75 mA; Ibq = 350 µA;
Vbe = 0,78 V; hfe = 140; hie = 200 Ω; R2 = 12 Ω.
Figure 3: amplifier scheme.

Process to solve:

Equation (1):

Vcc= Ic(Rc + Re) + Vce;

Ic= (Vcc-Vce)/(Rc+ Re) and Ic=0A, Vcc=20v Vce=0V, Ic= Vcc/Rc +Re;

(Rc + Re) = 20/0,1; (Rc + Re) = 200 Ω

Equation (2):

Vcc= Ib(R1+R2) + Vbe + Ic*Re;

Vcc - Vbe - (Ib*R2)= Ib*R1 + Ic*Re;

20-0,78(350*10^-6 *12) = 350*10^-6*R1 + 0,075Re

350x10-6*R1+0.075*Re = 19,216

We have an equations system for DC, lets plant our equivalent circuit for AC:

Taking the initial circuit, we transform it into the equivalent circuit to analyze other factors and
take out other equations that will serve us to obtain the desired value, the gain in voltage.
Figure 4: equivalent circuit for AC.

Equation (3): voltage gain

Avoc= Vs/Ve; Vs=-hfe*ib*Rc; Ve=ib(R2+hie);

Avoc=-(hfe*Rc)/(R2+hie);

In this step, we have decided to use a negative value, as a gain, since we are facing an inverter
amplifier, so our gain will be -50, a value that is within the set values.

Avoc=-(hfe*Rc)/(R2+hie) = -50;

Using the equation (3), to calculate Rc:

Rc= [50(12+200)/140]= 75,72 Ω.

Using the equation (1), to calculate Re:

200-Rc= Re= 200-75,72= 124,28 Ω.

Using the equation (2) to calculate R1:

350x10-6*R1+0.075*Re = 19,216; R1= 28271,43 Ω.

Concluding, the finals results are:

R1= 28271,43 Ω; Re= 124,28 Ω; Rc= 75,72 Ω; Vcc= 20V.

 BC546/547/548/549/550
BC546/547/548/549/550

Switching and Applications

• High Voltage: BC546, VCEO=65V
• Low Noise: BC549, BC550
• Complement to BC556 ... BC560

1 TO-92
1. Collector 2. Base 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BC546 80 V
: BC547/550 50 V
: BC548/549 30 V
VCEO Collector-Emitter Voltage : BC546 65 V
: BC547/550 45 V
: BC548/549 30 V
VEBO Emitter-Base Voltage : BC546/547 6 V
: BC548/549/550 5 V
IC Collector Current (DC) 100 mA
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB=30V, IE=0 15 nA
hFE DC Current Gain VCE=5V, IC=2mA 110 800
VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA 90 250 mV
IC=100mA, IB=5mA 200 600 mV
VBE (sat) Base-Emitter Saturation Voltage IC=10mA, IB=0.5mA 700 mV
IC=100mA, IB=5mA 900 mV
VBE (on) Base-Emitter On Voltage VCE=5V, IC=2mA 580 660 700 mV
VCE=5V, IC=10mA 720 mV
fT Current Gain Bandwidth Product VCE=5V, IC=10mA, f=100MHz 300 MHz
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 6 pF
Cib Input Capacitance VEB=0.5V, IC=0, f=1MHz 9 pF
NF Noise Figure : BC546/547/548 VCE=5V, IC=200µA 2 10 dB
: BC549/550 f=1KHz, RG=2KΩ 1.2 4 dB
: BC549 VCE=5V, IC=200µA 1.4 4 dB
: BC550 RG=2KΩ, f=30~15000MHz 1.4 3 dB

hFE Classification
Classification A B C
hFE 110 ~ 220 200 ~ 450 420 ~ 800

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

 BC546/547/548/549/550
Typical Characteristics

100 100

IB = 400µA VCE = 5V

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

80 IB = 350µA
IB = 300µA
10
IB = 250µA
60

IB = 200µA

40 IB = 150µA
1

IB = 100µA
20

IB = 50µA
0.1
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2
0 2 4 6 8 10 12 14 16 18 20

VCE[V], COLLECTOR-EMITTER VOLTAGE VBE[V], BASE-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. Transfer Characteristic

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

10000

VCE = 5V IC = 10 IB
1000
hFE, DC CURRENT GAIN

1000 V BE(sat)

100

100
10 V CE(sat)

1 10
1 10 100 1000 1 10 100 1000

IC[mA], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

100 1000
fT, CURRENT GAIN-BANDWIDTH PRODUCT

VCE = 5V
f=1MHz
IE = 0
Cob[pF], CAPACITANCE

10 100

1 10

0.1 1
1 10 100 1000 0.1 1 10 100

V CB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

 BC546/547/548/549/550
Package Dimensions

TO-92
+0.25
4.58 –0.15

4.58 ±0.20

0.46 ±0.10
14.47 ±0.40

+0.10
1.27TYP 1.27TYP 0.38 –0.05
[1.27 ±0.20] [1.27 ±0.20]

3.60 ±0.20
3.86MAX

(0.25)
+0.10
0.38 –0.05
1.02 ±0.10

(R2.29)

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2002 Fairchild Semiconductor Corporation Rev. I1