Learning Packet 3 Elex 1

3 | Electronic Devices and Circuits 1
UNIT 8: BIPOLAR JUNCTION TRANSISTOR
8.0 Intended Learning Outcomes

a. Explain the basic construction and operation of the Bipolar Junction Transistor;
b. Interpret the important parameters that define the response of a transistor;
8.1. Introduction
During the period 1904 to1947, the vacuum tube was the electronic device of
interest and development. In 1904, the vacuum-tube diode was introduced by J. A.
Fleming. Shortly thereafter, in 1906, Lee De Forest added a third element, called the
control grid, to the vacuum diode, resulting in the first amplifier, the triode. In the following
years, radio and television provided great stimulation to the tube
industry. Production rose from about 1 million tubes in 1922 to
about 100 million in 1937. In the early 1930s the four element
tetrode and the five-element pentode gained prominence in the
electron-tube industry. In the years to follow, the industry became
one of primary importance, and rapid advances were made in
design, manufacturing techniques, high-power and high-
frequency applications, and miniaturization. On December
23,1947, however, the electronics industry was to experience the
advent of a completely new direction of interest and development.
It was on the afternoon of this day that Dr. S. William Shockley,
Walter H. Brattain, and John Bardeen demonstrated the
amplifying action of the first transistor at the Bell Telephone
Laboratories as shown in Fig. 8.1. The advantages of this three-
terminal solid-state device over the tube were immediately
obvious: It was smaller and lightweight; it had no heater
requirement or heater loss; it had a rugged construction; it was
more efficient since less power was absorbed by the device itself;
it was instantly available for use, requiring no warm-up period;
and lower operating voltages were possible. Note that this chapter
is our first discussion of devices with three or more terminals. You
will find that all amplifiers (devices that increase the voltage,
current, or power level) have at least three terminals, with one
controlling the flow or potential between the other two.
Figure 8.1. Coinventors of the first transistor at Bell Laboratories
C. M. D. Hamo-ay
8.2 Topics/Discussion (with Assessment/Activities)
8.2.1 TRANSISTOR CONSTRUCTION

The transistor is a three-layer semiconductor device consisting of either two n- and
one p-type layers of material or two p- and one n-type layers of material. The former is
called an npn transistor, and the latter is called a pnp transistor. Both are shown in Fig. 8.3
with the proper dc biasing. The dc biasing is necessary to establish the proper region of
operation for ac amplification. The emitter layer is heavily doped, with the base and
collector only lightly doped. The outer layers have widths much greater than the
sandwiched p- or n-type material. For the transistors shown in Fig. 8.2 the ratio of the total
width to that of the center layer is 0.150y0.001 5 150:1. The doping of the sandwiched layer
is also considerably less than that of the outer layers (typically, 1:10 or less). This lower
doping level decreases the conductivity (increases the resistance) of this material by
limiting the number of “free” carriers.
For the biasing shown in Fig. 8.3 the terminals have been indicated by the capital
letters E for emitter, C for collector, and B for base. An appreciation for this choice of notation
will develop when we discuss the basic operation of the transistor. The abbreviation BJT,
from bipolar junction transistor, is often applied to this three-terminal device. The term
bipolar reflects the fact that holes and electrons participate in the injection process into the
oppositely polarized material. If only one carrier is employed (electron or hole), it is
considered a unipolar device. The Schottky diode is such a device.
Figure 8.2. The first transistor
Figure 8.3. Types of Transistors: (a) pnp; (b) npn
C. M. D. Hamo-ay
8.2.2 TRANSISTOR OPERATION

The basic operation of the transistor will now be described using the pnp
transistor of Fig. 8.3a. The operation of the npn transistor is exactly the same if the
roles played by the electron and hole are interchanged. In Fig. 8.4a the pnp transistor
has been redrawn without the base-to-collector bias. The depletion region has been
reduced in width due to the applied bias, resulting in a heavy flow of majority
carriers from the p- to the n-type material. Let us now remove the base-to-emitter
bias of the pnp transistor of Fig. 8.3a as shown in Fig. 8.4b. Consider the similarities
between this situation and that of the reverse-biased diode of Section 6. Recall that the
flow of majority carriers is zero, resulting in only a minority carrier flow, as
indicated in Fig. 8.4b. In summary, therefore:
One p–n junction of a transistor is reverse-biased, whereas the other is

forwardbiased.
Figure 8.4. Biasing a transistor: (a) forward-bias; (b) reverse-bias
In Fig. 8.5 both biasing potentials have been applied to a pnp transistor, with
the resulting majority- and minority-carrier flows indicated. Note in Fig. 8.5 the
widths of the depletion regions, indicating clearly which junction is forward-biased
and which is reverse-biased. As indicated in Fig. 8.5, a large number of majority
carriers will diffuse across the forward biased p–n junction into the n-type material.
The question then is whether these carriers will contribute directly to the base
current IB or pass directly into the p-type material. Since the sandwiched n-type
material is very thin and has a low conductivity, a very small number of
these carriers will take this path of high
resistance to the base terminal. The magnitude of
the base current is typically on the order of
microamperes, as compared to milliamperes for the
emitter and collector currents. The larger number of
these majority carriers will diffuse across
Figure 8.5. Majority & minority carrier flow
C. M. D. Hamo-ay
the reverse-biased junction into the p-type material connected to the collector
terminal as indicated in Fig. 8.5. The reason for the relative ease with which the
majority carriers can cross the reverse-biased junction is easily understood if we
consider that for the reverse-biased diode the injected majority carriers will appear
as minority carriers in the n-type material. In other words, there has been an injection
of minority carriers into the n-type base region material. Combining this with the
fact that all the minority carriers in the depletion region will cross the reverse-biased
junction of a diode accounts for the flow indicated in Fig. 8.5. Applying Kirchhoff’s
current law to the transistor of Fig. 8.5 as if it were a single node, we obtain
IE = IC + IB (1)
and find that the emitter current is the sum of the collector and base currents. The
collector current, however, comprises two components—the majority and the
minority carriers as indicated in Fig. 8.5. The minority-current component is called
the leakage current and is given the symbol ICO (IC current with emitter terminal
Open). The collector current, therefore, is determined in total by
IC = ICmajority + ICOminority (2)
For general-purpose transistors, IC is measured in milliamperes and ICO is

measured in microamperes or nanoamperes. ICO, like Is for a reverse-biased diode,
is temperature sensitive and must be examined carefully when applications of wide
temperature ranges are considered. It can severely affect the stability of a system at
high temperature if not considered properly. Improvements in construction
techniques have resulted in significantly lower levels of ICO, to the point where its
effect can often be ignored.
8.2.3 COMMON-BASE CONFIGURATION

The notation and symbols used in conjunction with the transistor in the
majority of texts and manuals published today are indicated in Fig. 8.6 for the
common-base configuration with pnp and npn transistors. The common-base
terminology is derived from the fact that the base is common to both the input and
output sides of the configuration. In addition, the base is usually the terminal closest
to, or at, ground potential. Throughout this text all current directions will refer to
conventional (hole) flow rather than electron flow. The result is that the arrows in all
electronic symbols have a direction defined by this convention. Recall that the arrow
in the diode symbol defined the direction of conduction for conventional current.
For the transistor:
The arrow in the graphic symbol defines the direction of emitter current
(conventional flow) through the device.
C. M. D. Hamo-ay
Fig.8.6
Notation and symbols used with the
common-base configuration: (a) pnp transistor; (b) npn transistor.
In the active region the base–emitter junction is forward-biased, whereas the

collector–base junction is reverse-biased.
C. M. D. Hamo-ay
Fig. 8.7 Output or collector characteristics for a common-base transistor amplifier.
Note in Fig. 8.7 that as the emitter current increases above zero, the collector
current increases to a magnitude essentially equal to that of the emitter current as
determined by the basic transistor-current relations. Note also the almost negligible
effect of VCB on the collector current for the active region. The curves clearly
indicate that
a first approximation
to the relationship between IE and IC in the active region is given by
IC ~= IE (3)
As inferred by its name, the cutoff region is defined as that region where the
collector current is 0 A, as revealed on Fig. 8.7. In addition:
In the cutoff region the base–emitter and collector–base junctions of a

transistor are both reverse-biased.
The saturation region is defined as that region of the characteristics to the left
of VCB 5 0 V. The horizontal scale in this region was expanded to clearly show the
dramatic change in characteristics in this region. Note the exponential increase in
collector current as the voltage VCB increases toward 0 V.
In the saturation region the base–emitter and collector–base junctions are

forward-biased.
VBE ~= 0.7 V
C. M. D. Hamo-ay
Fig. 8.8
Input or driving point characteristics for a
common-base silicon transistor amplifier.
alpha (A)
DC mode In the dc mode the levels of IC and IE due to the majority carriers
are related by a quantity called alpha and defined by the following equation:
adc =IC*IE (5)
where IC and IE are the levels of current at the point of operation. Even though the
characteristics of Fig. 8.7 would suggest that a 5 1, for practical devices alpha
typically extends from 0.90 to 0.998, with most values approaching the high end of
the range. Since alpha is defined solely for the majority carriers, Eq. (2) becomes
IC = aIE + ICBO (6)
For the characteristics of Fig. 8.8 when IE 5 0 mA, IC is therefore equal to

ICBO, but as mentioned earlier, the level of ICBO is usually so small that it is
virtually undetectable on the graph of Fig. 8.8. In other words, when IE 5 0 mA on
Fig. 8.8, IC also appears to be 0 mA for the range of VCB values.
aC mode For ac situations where the point of operation moves on the characteristic
curve, an ac alpha is defined by
(7)
The ac alpha is formally called the common-base, short-circuit, amplification factor. For
C. M. D. Hamo-ay
the moment, recognize that Eq. (7) specifies that a relatively small change in collector
current is divided by the corresponding change in IE with the collector-to-base
voltage held constant. For most situations the magnitudes of aac and adc are quite
close, permitting the use of the magnitude of one for the other. The use of an
equation such as (7).
Example 1
a. Using the characteristics of Fig. 8.7, determine the resulting collector current if IE 5
3 mA and VCB 5 10 V.
b. Using the characteristics of Fig. 8.7, determine the resulting collector current if IE
remains at 3 mA but VCB is reduced to 2 V.
c. Using the characteristics of Figs. 8.7 and 8.8, determine VBE if IC 5 4 mA and VCB
5 20 V.
d. Repeat part (c) using the characteristics of Figs. 8.7 and 10c.
Solution:
a. The characteristics clearly indicate that IC ~= IE = 3 mA.
b. The effect of changing VCB is negligible and IC continues to be 3 mA.
c. From Fig. 8, IE ~= IC = 4 mA. On Fig. 7 the resulting level of VBE is about 0.74 V.
d. Again from Fig. 8, IE ~= IC = 4 mA. However, on Fig. 10c, VBE is 0.7 V for any
level of emitter current.
8.2.4 COMMON-EMITTER CONFIGURATION

The most frequently encountered transistor configuration appears in Fig. 8.9
for the pnp and npn transistors. It is called the common-emitter configuration because
the emitter is common to both the input and output terminals (in this case common
to both the base and collector terminals). Two sets of characteristics are again
necessary to describe fully the behavior of the common-emitter configuration: one
for the input or base–emitter circuit and one for the output or collector–emitter circuit.
Both are shown in Fig. 8.10.
Fig. 8.9. Notation and symbols used with the common-emitter configuration:
(a) npn transistor; (b) pnp transistor.
C. M. D. Hamo-ay
Fig. 8.10. Characteristics of a silicon transistor in the common-emitter configuration:

(a) collector characteristics; (b) base characteristics.
The emitter, collector, and base currents are shown in their actual
conventional current direction. Even though the transistor configuration has
changed, the current relations developed earlier for the common-base configuration
are still applicable. That is, IE = IC + IB and IC = aIE. For the common-emitter
configuration the output characteristics are a plot of the output current (IC) versus
output voltage (VCE) for a range of values of input current (IB). The input
characteristics are a plot of the input current (IB) versus the input voltage (VBE) for a
range of values of output voltage (VCE). Note that on the characteristics of Fig. 8.11
the magnitude of IB is in microamperes, compared to milliamperes of IC.
Consider also that the curves of IB are not as horizontal as those obtained for IE in
the common-base configuration, indicating that the collector-to-emitter voltage will
influence the magnitude of the collector current. The active region for the common-
emitter configuration is that portion of the upper-right quadrant that has the greatest
linearity, that is, that region in which the curves for IB are nearly straight and
equally spaced. In Fig. 8.11a this region exists to the right of the vertical dashed line
at VCEsat and above the curve for IB equal to zero. The region to the left of VCEsat is
called the saturation region.
In the active region of a common-emitter amplifier, the base–emitter junction

is forward-biased, whereas the collector–base junction is reverse-biased.
You will recall that these were the same conditions that existed in the active
region of the common-base configuration. The active region of the common-emitter
C. M. D. Hamo-ay
configuration can be employed for voltage, current, or power amplification. The

cutoff region for the common-emitter configuration is not as well defined as for the
common-base configuration. Note on the collector characteristics of Fig. 8.11 that IC
is not equal to zero when IB is zero. For the common-base configuration, when the
input current IE was equal to zero, the collector current was equal only to the reverse
saturation current ICO, so that the curve IE 5 0 and the voltage axis were, for all
practical purposes, one. The reason for this difference in collector characteristics can
be derived through the proper manipulation of Eqs. (3) and (6). That is,
If we consider the case discussed above, where IB 5 0 A, and substitute a

typical value of a such as 0.996, the resulting collector current is the following:
If ICBO were 1 mA, the resulting collector current with IB 5 0 A would be

250(1 mA) 50.25 mA, as reflected in the characteristics of Fig. 8.11. For future
reference, the collector current defined by the condition IB 5 0 mA will be assigned
the notation indicated by the following equation:
In Fig. 8.10 the conditions surrounding this newly defined current are
demonstrated with its assigned reference direction.
For linear (least distortion) amplification purposes, cutoff for the common-
emitter configuration will be defined by IC 5 ICEO.
In other words, the region below IB 5 0 mA is to be avoided if an undistorted

output signal is required. When employed as a switch in the logic circuitry of a
computer, a transistor will have two points of operation of interest: one in the cutoff
and one in the saturation region.
C. M. D. Hamo-ay
Fig. 8.11 Fig. 8.12

Circuit conditions related to ICEO. Piecewise-linear equivalent for the
diode characteristics of Fig. 13b.
The cutoff condition should ideally be IC 5 0 mA for the chosen VCE voltage. Since
ICEO is typically low in magnitude for silicon materials, cutoff will exist for switching
purposes when IB 5 0 mA or IC = ICEO for silicon transistors only. For germanium
transistors, however, cutoff for switching purposes will be defined as those conditions that
exist when IC = ICBO. This condition can normally be obtained for germanium
transistors by reverse-biasing the base-to-emitter junction a few tenths of a volt.
Recall for the common-base configuration that the input set of characteristics was
approximated by a straight-line equivalent that resulted in VBE 5 0.7 V for any level
of IE greater than 0 mA. For the common-emitter configuration the same approach
can be taken, resulting in the approximate equivalent of Fig. 8.12. The result
supports our earlier conclusion that for a transistor in the “on” or active region the
base-to-emitter voltage is 0.7 V. In this case the voltage is fixed for any level of base
current.
beta (B)
DC mode In the dc mode the levels of IC and IB are related by a quantity called beta
and defined by the following equation:
where IC and IB are determined at a particular operating point on the characteristics.

For practical devices the level of b typically ranges from about 50 to over 400, with
most in the midrange. As for a, the parameter b reveals the relative magnitude of
C. M. D. Hamo-ay
one current with respect to the other. For a device with a b of 200, the collector
current is 200 times the magnitude of the base current.
On specification sheets bdc is usually included as hFE with the italic letter h
derived from an ac hybrid equivalent circuit. The subscript FE is derived from
forward-current amplification and common-emitter configuration, respectively. AC
mode For ac situations an ac beta is defined as follows:
Example:
a. Using the characteristics of Fig. 8.10, determine IC at IB 5 30 mA and VCE 5 10 V.
b. Using the characteristics of Fig. 8.10, determine IC at VBE 5 0.7 V and VCE 5 15 V.
Solution:
a. At the intersection of IB 5 30 mA and VCE 5 10 V, IC 5 3.4 mA.
b. Using Fig. 13b, we obtain IB 5 20 mA at the intersection of VBE 5 0.7 V and VCE 5 15
V (between VCE 5 10 V and 20 V). From Fig. 13a we find that IC 5 2.5 mA at theintersection
of IB 5 20 mA and VCE 5 15 V.
8.2.5 COMMON-COLLECTOR CONFIGURATION

The third and final transistor configuration is the common-collector
configuration, shown in Fig. 8.13 with the proper current directions and voltage
notation. The common-collector configuration is used primarily for impedance-
matching purposes since it has a high input impedance and low output impedance,
opposite to that of the common-base and common emitter configurations.
Fig. 8.13 Notation and symbols used with the common-collector configuration: (a) pnp
transistor; (b) npn transistor.
C. M. D. Hamo-ay
A common-collector circuit configuration is provided in Fig. 8.14 with the

load resistor connected from emitter to ground. Note that the collector is tied to
ground even though the transistor is connected in a manner similar to the common-
emitter configuration. From a design viewpoint, there is no need for a set of
common-collector characteristics to choose the parameters of the circuit of Fig. 8.14.
For all practical purposes, the output characteristics of the common-collector
configuration are the same as for the common-emitter configuration. For the
common-collector configuration the output characteristics are a plot of IE versus
VCE for a range of values of IB. The input current, therefore, is the same for both the
common emitter and common-collector characteristics. The horizontal voltage axis
for the common collector configuration is obtained by simply changing the sign of
the collector-to-emitter voltage of the common-emitter characteristics. Finally, there
is an almost unnoticeable change in the vertical scale of IC of the common-emitter
characteristics if IC is replaced by IE for the common-collector characteristics (since a
B~= 1). For the input circuit of the common-collector configuration the common-
emitter base characteristics are sufficient for obtaining the required information.
Fig. 8.14. Common-collector configuration used for impedance-matching purposes.
ASSESSMENT
1. Explain the basic operation of BJT with illustration. (20 points)
2. Describe the doping level content of the BJT’s pins. (15 points)
3. (15 POINTS)
a. Given an adc of 0.998, determine IC if IE 5 4 mA.
b. Determine adc if IE 5 2.8 mA and IB 5 20 mA.
c. Find IE if IB 5 40 mA and adc is 0.98.
4. If the emitter current of a transistor is 8 mA and IB is 1y100 of IC, determine the
levels of IC and IB. (20 POINTS)
8.3 References
Boylestad, R. and Nashelsky, Louis. 2014. Electronics Devices and Circuit
Theory 11th Edition. Pearson New International Edition.
8.4 Acknowledgment
The images, tables, figures and information contained in this module were
taken from the references cited above.
C. M. D. Hamo-ay
UNIT 9: DC BIASING - BJTs

a. Recognize the dc levels for the variety of important BJT configurations;
b. Interpret the basic operation of transistor switching networks;
9.1. Introduction
The analysis or design of a transistor amplifier requires a knowledge of both
the dc and the ac response of the system. Too often it is assumed that the transistor is
a magical device that can raise the level of the applied ac input without the
assistance of an external energy source. In actuality,
any increase in ac voltage, current, or power is the result of a transfer of

energy from the applied dc supplies.
The analysis or design of any electronic amplifier therefore has two

components: a dc and an ac portion. Fortunately, the superposition theorem is
applicable, and the investigation of the dc conditions can be totally separated from
the ac response. However, one must keep in mind that during the design or
synthesis stage the choice of parameters for the required dc levels will affect the ac
response, and vice versa. The dc level of operation of a transistor is controlled by a
number of factors, including the range of possible operating points on the device
characteristics. In Unit 8 we specify the range for the bipolar junction transistor (BJT)
amplifier. Once the desired dc current and voltage levels have been defined, a
network must be constructed that will establish the desired operating point. A
number of these networks are analyzed in this chapter. Each design will also
determine the stability of the system, that is, how sensitive the system is to
temperature variations, another topic to be investigated in a later section of this
chapter. Although a number of networks are analyzed in this chapter, there is an
underlying DC Biasing—BJTs similarity in the analysis of each configuration due to
the recurring use of the following important basic relationships for a transistor:
C. M. D. Hamo-ay
Figure 9.1. BJT DC biasing.
In fact, once the analysis of the first few networks is clearly understood, the
path toward the solution of the networks to follow will begin to become quite
apparent. In most instances the base current IB is the first quantity to be determined.
Once IB is known, the relationships of Eqs. (1) through (3) can be applied to find the
remaining quantities of interest. The similarities in analysis will be immediately
obvious as we progress through the chapter. The equations for IB are so similar for a
number of configurations that one equation can be derived from another simply by
dropping or adding a term or two. The primary function of this chapter is to develop
a level of familiarity with the BJT transistor that would permit a dc analysis of any
system that might employ the BJT amplifier.
9.2.1 FIXED-BIAS CONFIGURATION

The fixed-bias circuit of Fig. 9.2 is the simplest transistor dc bias configuration.
Even though the network employs an npn transistor, the equations and calculations
apply equally well to a pnp transistor configuration merely by changing all current
directions and voltage polarities. The current directions of Fig. 9.2 are the actual
current directions, and the voltages are defined by the standard double-subscript
notation. For the dc analysis the network can be isolated from the indicated ac levels
by replacing the capacitors with an open-circuit equivalent because the reactance of a
capacitor is a function of the applied frequency. For dc, f = 0 Hz, and XC = 1>2pfC =
1>2p(0)C = V. In addition, the dc supply VCC can be separated into two supplies
(for analysis purposes only) as shown in Fig. 3 to permit a separation of input and
output circuits. It also reduces the linkage between the two to the base current IB. The
separation is certainly valid, as we note in Fig. 3 that VCC is connected directly to RB
and RC just as in Fig. 9.2.
C. M. D. Hamo-ay
Fig. 9.2 Fig. 9.3

Fixed-bias circuit. DC equivalent of Fig. 9.2.
Forward bias of base–emitter

Consider first the base–emitter circuit loop of Fig. 9.4. Writing Kirchhoff’s
voltage equation in the clockwise direction for the loop, we obtain
+VCC - IBRB - VBE = 0
Note the polarity of the voltage drop across RB as established by the indicated
direction of IB. Solving the equation for the current IB results in the following:
Fig. 9.4
Base–emitter loop.
Equation (4) is certainly not a difficult one to remember if one simply keeps in
mind that the base current is the current through RB and by Ohm’s law that current is the
voltage across RB divided by the resistance RB. The voltage across RB is the applied
voltage VCC at one end less the drop across the base-to-emitter junction (VBE). In
addition, because the supply voltage VCC and the base–emitter voltage VBE are
C. M. D. Hamo-ay
constants, the selection of a base resistor RB sets the level of base current for the
operating point.
Collector–emitter Loop
Fig. 9.5
Collector–emitter loop.
The collector–emitter section of the network appears in Fig. 9.5 with the
indicated direction of current IC and the resulting polarity across RC. The magnitude
of the collector current is related directly to IB through
It is interesting to note that because the base current is controlled by the level of
RB and IC is related to IB by a constant b, the magnitude of IC is not a function of the
resistance RC. Changing RC to any level will not affect the level of IB or IC as long as
we remain in the active region of the device. However, as we shall see, the level of RC
will determine the magnitude of VCE, which is an important parameter. Applying
Kirchhoff’s voltage law in the clockwise direction around the indicated closed loop of
Fig. 9.5 results in the following:
VCE + ICRC - VCC = 0
which states that the voltage across the collector–emitter region of a transistor in the
fixed bias configuration is the supply voltage less the drop across RC.
As a brief review of single- and double-subscript notation recall that
C. M. D. Hamo-ay
where VCE is the voltage from collector to emitter and VC and VE are the voltages
from collector and emitter to ground, respectively. In this case, since VE = 0 V, we have
In addition, because
and VE = 0 V, then
Keep in mind that voltage levels such as VCE are determined by placing the
positive lead (normally red) of the voltmeter at the collector terminal with the
negative lead (normally black) at the emitter terminal as shown in Fig. 6. VC is the
voltage from collector to ground and is measured as shown in the same figure. In this
case the two readings are identical, but in the networks to follow the two can be quite
different. Clearly understanding the difference between the two measurements can
prove to be quite important in the troubleshooting of transistor networks.
Fig. 9.6
Measuring VCE and VC.
C. M. D. Hamo-ay
Example Determine the following for the fixed-bias configuration of Fig. 9.7.
a. IBQ and ICQ.
b. VCEQ.
c. VB and VC.
d. VBC.
Solution:
Fig. 9.7
DC fixed-bias circuit for Example 1.
9.2.2 EMITTER-BIAS CONFIGURATION

The dc bias network of Fig. 9.8 contains an emitter resistor to improve the
stability level over that of the fixed-bias configuration. The more stable a
configuration, the less its response will change due to undesireable changes in
temperature and parameter
C. M. D. Hamo-ay
Fig. 9.8
BJT bias circuit with emitter resistor.
variations. The improved stability will be demonstrated through a numerical example

later in the section. The analysis will be performed by first examining the base–emitter
loop and then using the results to investigate the collector–emitter loop. The dc
equivalent of Fig. 9.8 appears in Fig 9.9 with a separation of the source to create an
input and output section.
Base–emitter Loop
Fig. 9.9
DC equivalent of Fig. 9.8.
Fig. 9.10
Base–emitter loop.
C. M. D. Hamo-ay
The base–emitter loop of the network of Fig. 9.9 can be redrawn as shown in
Fig. 9.10. Writing Kirchhoff’s voltage law around the indicated loop in the clockwise
direction results in the following equation:
+VCC - IBRB - VBE - IERE = 0 (15)

Recall that
IE = (b + 1)IB (16)
Substituting for IE in Eq. (15) results in
VCC - IBRB - VBE - (b + I)IBRE = 0
Grouping terms then provides the following:
-IB(RB + (b + 1)RE) + VCC - VBE = 0
Multiplying through by (-1), we have
IB(RB + (b + 1)RE) - VCC + VBE = 0
with IB(RB + (b + 1)RE) = VCC – VBE
and solving for IB gives
Note that the only difference between this equation for IB and that obtained for
the fixedbias configuration is the term (b + 1)RE. There is an interesting result that can
be derived from Eq. (17) if the equation is used to sketch a series network that would
result in the same equation. Such is the case for the network of Fig. 9.11. Solving for
the current IB results in the same equation as obtained above. Note that aside from the
base-to-emitter voltage VBE, the resistor RE is reflected back to the input base circuit by
a factor (b + 1). In other words, the emitter resistor, which is part of the collector–
emitter loop, “appears as” (b + 1)RE in the base–emitter loop. Because b is typically 50
or more, the emitter resistor appears to be a great deal larger in the base circuit.
In general, therefore, for the configuration of Fig. 9.12,
C. M. D. Hamo-ay
Fig. 9.11
Network derived from Eq. (17).
Fig. 9.12
Reflected impedance level of RE.
Fig. 9.13
Collector–emitter loop.
The collector–emitter loop appears in Fig. 9.13. Writing Kirchhoff’s voltage

law for the indicated loop in the clockwise direction results in
+IERE + VCE + ICRC - VCC = 0
Substituting IE IC and grouping terms gives
VCE - VCC + IC(RC + RE) = 0
C. M. D. Hamo-ay
The single-subscript voltage VE is the voltage from emitter to ground and is

determined by
whereas the voltage from collector to ground can be determined from
VCE = VC – VE
The voltage at the base with respect to ground can be determined using Fig. 9.9.
Example For the emitter-bias network of Fig. 9.14, determine:

a. IB.
b. IC.
c. VCE.
d. VC.
e. VE.
f. VB.
g. VBC.
Fig. 9.14
Emitter-stabilized bias circuit.
C. M. D. Hamo-ay
9.2.3 VOLTAGE-DIVIDER BIAS CONFIGURATION

In the previous bias configurations the bias current ICQ and voltage VCEQ
were a function of the current gain b of the transistor. However, because b is
temperature sensitive, especially for silicon transistors, and the actual value of beta is
usually not well defined, it would be desirable to develop a bias circuit that is less
dependent on, or in fact is independent of, the transistor beta. The voltage-divider bias
configuration of Fig. 9.15 is such a network. If analyzed on an exact basis, the
sensitivity to changes in beta is quite small. If the circuit parameters are properly
chosen, the resulting levels of ICQ and VCEQ can be almost totally independent of
beta. Recall from previous discussions that a Q-point is defined by a fixed level of ICQ
and VCEQ as shown in Fig. 9.16. The level of IBQ will change with the change in beta,
but the operating point on the characteristics defined by ICQ and VCEQ can remain
fixed if the proper circuit parameters are employed.
As noted earlier, there are two methods that can be applied to analyze the
voltage-divider configuration. The reason for the choice of names for this
configuration will become obvious in the analysis to follow. The first to be
demonstrated is the exact method, which can be applied to any voltage-divider
configuration. The second is referred to as the approximate method and can be applied
only if specific conditions are satisfied.
C. M. D. Hamo-ay
The approximate approach permits a more direct analysis with a savings in time and
energy. It is also particularly helpful in the design mode to be described in a later
section. All in all, the approximate approach can be applied to the majority of
situations and therefore should be examined with the same interest as the exact
method.
Fig. 9.15
Voltage-divider bias configuration.
Fig. 9.16
Defining the Q-point for the voltage-divider bias
configuration.
C. M. D. Hamo-ay
Exact analysis
Fig. 9.17
DC components of the voltagedivider
configuration.
Fig. 9.18
Redrawing the input side of the
network.
Fig. 9.19
Determining RTh.
For the dc analysis the network of Fig. 9.15 can be redrawn as shown in Fig.
9.17. The input side of the network can then be redrawn as shown in Fig. 31 for the
dc analysis. The Thévenin equivalent network for the network to the left of the base
terminal can then be found in the following manner:
Rth The voltage source is replaced by a short-circuit equivalent as shown in Fig.
9.19:
C. M. D. Hamo-ay
Fig. 9.20
Determining ETh.
Eth The voltage source VCC is returned to the network and the open-circuit
Thévenin voltage of Fig. 9.20 determined as follows:
Applying the voltage-divider rule gives
Fig. 9.21
Inserting the Thévenin equivalent
circuit.
The Thévenin network is then redrawn as shown in Fig. 9.21, and IBQ can be
determined by first applying Kirchhoff’s voltage law in the clockwise direction for
the loop indicated:
ETh - IBRTh - VBE - IERE = 0
Substituting IE = (b + 1)IB and solving for IB yields
Although Eq. (30) initially appears to be different from those developed

earlier, note that the numerator is again a difference of two voltage levels and the
denominator is the base resistance plus the emitter resistor reflected by (b 1 1)—
certainly very similar to Eq. (17). Once IB is known, the remaining quantities of the
C. M. D. Hamo-ay
network can be found in the same manner as developed for the emitter-bias
configuration. That is,
which is exactly the same as Eq. (19). The remaining equations for VE, VC, and VB are
also the same as obtained for the emitter-bias configuration.
Example Determine the dc bias voltage VCE and the current IC for the voltage-divider
configuration of Fig. 9.22.
Fig. 9.22
Beta-stabilized circuit.
C. M. D. Hamo-ay
9.2.4 COLLECTOR FEEDBACK CONFIGURATION
An improved level of stability can also be obtained by introducing a feedback

path from collector to base as shown in Fig. 9.22. Although the Q-point is not totally
independent of beta (even under approximate conditions), the sensitivity to changes
in beta or temperature variations is normally less than encountered for the fixed-bias
or emitter-biased configurations. The analysis will again be performed by first
analyzing the base–emitter loop, with the results then applied to the collector–emitter
loop.
Base–emitter Loop
Figure 9.23 shows the base–emitter loop for the voltage feedback configuration.
Writing Kirchhoff’s voltage law around the indicated loop in the clockwise direction
will result in
VCC – I’CRC - IBRF - VBE - IERE = 0
It is important to note that the current through RC is not IC, but I’C (where I’C = IC + IB).
However, the level of IC and I’C far exceeds the usual level of IB, and the approximation
IC IC is normally employed. Substituting I’C ~= IC = bIB and IE ~=IC results in
VCC - bIBRC - IBRF - VBE - bIBRE = 0
Fig. 9.22 Fig. 9.23

DC bias circuit with voltage feedback. Base–emitter loop for the network of Fig. 9.22.
C. M. D. Hamo-ay
Gathering terms, we have
VCC - VBE - bIB(RC + RE) - IBRF = 0

and solving for IB yields
The result is quite interesting in that the format is very similar to equations
for IB obtained for earlier configurations. The numerator is again the difference of
available voltage levels, whereas the denominator is the base resistance plus the
collector and emitter resistors reflected by beta. In general, therefore, the feedback
path results in a reflection of the resistance RC back to the input circuit, much like
the reflection of RE. In general, the equation for IB has the following format, which
can be compared with the result for the fixed-bias and emitter-bias configurations.
For the fixed-bias configuration bR’ does not exist. For the emitter-bias setup
(with
In general, the larger R’ is compared with the more accurate the

approximation that
The result is an equation absent of b, which would be very stable for

variations in b. Because R’ is typically larger for the voltage-feedback configuration
than for the emitter bias configuration, the sensitivity to variations in beta is less. Of
course, R’ is 0 ohms for the fixed-bias configuration and is therefore quite sensitive
to variations in beta.
C. M. D. Hamo-ay
The collector–emitter loop for the network of Fig. 9.22 is provided in Fig. 9.24.
Applying Kirchhoff’s voltage law around the indicated loop in the clockwise
direction results in
IERE + VCE + I’C RC - VCC = 0
Fig. 9.24
Collector–emitter loop for the
network of Fig. 9.22.
which is exactly as obtained for the emitter-bias and voltage-divider bias

configurations.
Example Determine the quiescent levels of ICQ and VCEQ for the network of
Fig. 9.25.
Fig. 9.25 Network for the Example.
C. M. D. Hamo-ay
9.2.5 EMITTER-FOLLOWER CONFIGURATION

The previous sections introduced configurations in which the output voltage
is typically taken off the collector terminal of the BJT. This section will examine a
configuration where the output is taken off the emitter terminal as shown in Fig. 46.
The configuration of Fig. 9.26 is not the only one where the output can be taken off
the emitter terminal. In fact, any of the configurations just described can be used so
long as there is a resistor in the emitter leg.
Fig. 9.26
Common-collecter (emitter-follower) configuration.
The dc equivalent of the network of Fig. 9.26 appears in Fig. 9.27 DC

Biasing—BJTs Applying Kirchhoff’s voltage rule to the input circuit will result in
-IBRB - VBE - IERE + VEE = 0
and using IE = (b + 1)IB
IBRB + (b + 1)IBRE = VEE – VBE
C. M. D. Hamo-ay
Fig. 9.27
dc equivalent of Fig. 9.26.
For the output network, an application of Kirchhoff’s voltage law will result in
-VCE - IERE + VEE = 0
Example Determine VCEQ and IEQ for the network of Fig. 9.28.
Fig. 9.28
C. M. D. Hamo-ay
9.2.6 COMMON-BASE CONFIGURATION

The common-base configuration is unique in that the applied signal is
connected to the emitter terminal and the base is at, or just above, ground potential. It
is a fairly popular configuration because in the ac domain it has a very low input
impedance, high output impedance, and good gain.
A typical common-base configuration appears in Fig. 9.29. Note that two
supplies are used in this configuration and the base is the common terminal between
the input emitter terminal and output collector terminal.
The dc equivalent of the input side of Fig. 9.29 appears in Fig. 9.30.
Fig. 9.29
Common-base configuration.
Fig. 9.30
Input dc equivalent of Fig. 9.29.
C. M. D. Hamo-ay
Applying Kirchhoff’s voltage law will result in
-VEE + IERE + VBE = 0
Fig. 9.31
Determining VCE and VCB.
Applying Kirchhoff’s voltage law to the entire outside perimeter of the network
of Fig. 9.31 will result in
-VEE + IERE + VCE + ICRC - VCC = 0
and solving for VCE: VCE = VEE + VCC - IERE - ICRC

Because IE ~= IC
output loop of Fig 51 to obtain:
VCB + ICRC - VCC = 0
or VCB = VCC – ICRC
Using IC ~= IE
C. M. D. Hamo-ay
Example Determine the currents IE and IB and the voltages VCE and VCB for the
common-base configuration of Fig. 9.32.
Fig. 9.32
9.2.7 MISCELLANEOUS BIAS CONFIGURATION
There are a number of BJT bias configurations that do not match the basic mold
of those analyzed in the previous sections. In fact, there are variations in design that
would require many more pages than is possible in a single publication. However, the
primary purpose here is to emphasize those characteristics of the device that permit a
dc analysis of the configuration and to establish a general procedure toward the
desired solution. For each configuration discussed thus far, the first step has been the
derivation of an expression for the base current. Once the base current is known, the
collector current and voltage levels of the output circuit can be determined quite
directly. This is not to imply that all solutions will take this path, but it does suggest a
possible route to follow if a new configuration is encountered.
The first example is simply one where the emitter resistor has been dropped
from the voltage-feedback configuration of Fig. 9.22. The analysis is quite similar, but
does require dropping RE from the applied equation.
C. M. D. Hamo-ay
Example For the network of Fig. 9.33:
a. Determine ICQ and VCEQ.

b. Find VB, VC, VE, and VBC.
Fig. 9.33
Collector feedback with RE = 0 V.
ASSESSMENT
Show your solution.
1. Given the information appearing in Fig. , determine: (40 points)
a. IC.
b. VCC.
c. Beta
d. RB.
C. M. D. Hamo-ay
2. Given the information provided in Fig., determine: (30 points)

a. Beta
b. VCC.
c. RB.
3. For the collector-feedback configuration of Fig., determine: (30 points)

a. IB.
b. IC.
c. VC.
C. M. D. Hamo-ay
4. Make a simple simulation of a circuit using BJT Bias Configuration of your choice
then compare the results of the reading in the simulation with your written
calculation. Take a screenshot of it and send it to LMS, or to my FB messenger, or
email (nikko.floretes@ssu.edu.ph). (30 points)
9.3 References
9.4 Acknowledgment
C. M. D. Hamo-ay
UNIT 10: SMALL SIGNAL ANALYSIS (BJT)

a. Interpret the re, hybrid, and hybrid π models for the BJT transistor;
b. Interpret the effects of a source resistance and load resistor on the overall gain
and characteristics of an amplifier;
10.1. Introduction
We now begin to examine the ac response of the BJT amplifier by reviewing the
models most frequently used to represent the transistor in the sinusoidal ac domain.
One of our first concerns in the sinusoidal ac analysis of transistor networks is the
magnitude of the input signal. It will determine whether small-signal or large-signal
techniques should be applied. There is no set dividing line between the two, but the
application—and the magnitude of the variables of interest relative to the scales of the
device characteristics— will usually make it quite clear which method is appropriate.
The small-signal technique is introduced in this chapter. There are three models
commonly used in the small-signal ac analysis of transistor networks: the re model,
the hybrid pi model, and the hybrid equivalent model. This chapter introduces all
three but emphasizes the re model.
10.2.1 AMPLIFICATION IN THE AC DOMAIN

The transistor can be employed as an amplifying device. That is, the output
sinusoidal signal is greater than the input sinusoidal signal, or, stated another way,
the output ac power is greater than the input ac power. The question then arises as to
how the ac power output can be greater than the input ac power. Conservation of
energy dictates that over time the total power output, Po, of a system cannot be
greater than its power input, Pi, and that the efficiency defined by h = Po>Pi cannot be
greater than 1. The factor missing from the discussion above that permits an ac power
output greater than the input ac power is the applied dc power. It is the principal
contributor to the total output power even though part of it is dissipated by the device
and resistive elements. In other words, there is an “exchange” of dc power to the ac
domain that permits establishing a higher output ac power. In fact, a conversion
efficiency is defined by h = Po(ac)>Pi(dc), where Po(ac) is the ac power to the load and
Pi(dc) is the dc power supplied. Perhaps the role of the dc supply can best be
described by first considering the simple dc network of Fig. 10.1. The resulting
direction of flow is indicated in the figure with a plot of the current i versus time. Let
us now insert a control mechanism such as that shown in Fig. 10.2. The control
C. M. D. Hamo-ay
mechanism is such that the application of a relatively small signal to the control
mechanism can result in a substantial oscillation in the output circuit.
Fig. 10.1
Steady current established by a
dc supply.
Fig. 10.2
Effect of a control element on the steady-state flow of the electrical
system of Fig. 10.1.
That is, for this example,

iac(p-p) >> ic(p-p)
and amplification in the ac domain has been established. The peak-to-peak value of
the output current far exceeds that of the control current.
For the system of Fig. 10.2, the peak value of the oscillation in the output
circuit is controlled by the established dc level. Any attempt to exceed the limit set
by the dc level will result in a “clipping” (flattening) of the peak region at the high
and low end of the output signal. In general, therefore, proper amplification design
requires that the dc and ac components be sensitive to each other’s requirements and
limitations.
However, it is extremely helpful to realize that:
The superposition theorem is applicable for the analysis and design of the dc
and ac components of a BJT network, permitting the separation of the
analysis of the dc and ac responses of the system.
C. M. D. Hamo-ay
In other words, one can make a complete dc analysis of a system before

considering the ac response. Once the dc analysis is complete, the ac response can be
determined using a completely ac analysis. It happens, however, that one of the
components appearing in the ac analysis of BJT networks will be determined by the
dc conditions, so there is still an important link between the two types of analysis.
10.2.2 BJT TRANSISTOR MODELING

The key to transistor small-signal analysis is the use of the equivalent circuits
(models) to be introduced in this chapter.
A model is a combination of circuit elements, properly chosen, that best

approximates the actual behavior of a semiconductor device under specific
operating conditions.
Once the ac equivalent circuit is determined, the schematic symbol for the
device can be replaced by this equivalent circuit and the basic methods of circuit
analysis applied to determine the desired quantities of the network.
In the formative years of transistor network analysis the hybrid equivalent
network was employed the most frequently. Specification sheets included the
parameters in their listing, and analysis was simply a matter of inserting the
equivalent circuit with the listed values.
The drawback to using this equivalent circuit, however, is that it is defined for a
set of operating conditions that might not match the actual operating conditions. In most
cases, this is not a serious flaw because the actual operating conditions are relatively
close to the chosen operating conditions on the data sheets. In addition, there is
always a variation in actual resistor values and given transistor beta values, so as an
approximate approach it was quite reliable. Manufacturers continue to specify the
hybrid parameter values for a particular operating point on their specification
sheets. They really have no choice. They want to give the user some idea of the value
of each important parameter so comparisons can be made between transistors, but
they really do not know the user’s actual operating conditions. In time the use of the
re model became the more desirable approach because an important parameter of the
equivalent circuit was determined by the actual operating conditions rather than
using a data sheet value that in some cases could be quite different. Unfortunately,
however, one must still turn to the data sheets for some of the other parameters of
the equivalent circuit. The re model also failed to include a feedback term, which in
some cases can be important if not simply troublesome. The re model is really a
reduced version of the hybrid p model used almost exclusively for high-frequency
analysis. This model also includes a connection between output and input to include
the feedback effect of the output voltage and the input quantities. Throughout the
text the re model is the model of choice unless the discussion centers on the
description of each model or a region of examination that predetermines the model
that should be used. Whenever possible, however, a comparison between models
will be discussed to show how closely related they really are. It is also important that
C. M. D. Hamo-ay
once you gain a proficiency with one model it will carry over to an investigation
using a different model, so moving from one to another will not be a dramatic
undertaking. In an effort to demonstrate the effect that the ac equivalent circuit will
have on the analysis to follow, consider the circuit of Fig. 10.3. Let us assume for the
moment that the small-signal ac equivalent circuit for the transistor has already been
determined. Because we are interested only in the ac response of the circuit, all the
dc supplies can be replaced by a zero-potential equivalent (short circuit) because
they determine only the dc (quiescent level) of the output voltage and not the
magnitude of the swing of the ac output. This is clearly demonstrated by Fig. 10.4.
The dc levels were simply important for determining the proper Q-point of
operation. Once determined, the dc levels can be ignored in the ac analysis of the
network. In addition, the coupling capacitors C1 and C2 and bypass capacitor C3
were chosen to have a very small reactance at the frequency of application.
Therefore, they, too, may for all practical purposes be replaced by a lowresistance
path or a short circuit. Note that this will result in the “shorting out” of the dc
biasing resistor RE. Recall that capacitors assume an “open-circuit” equivalent under
dc steady-state conditions, permitting an isolation between stages for the dc levels
and quiescent conditions.
Fig. 10.3
Transistor circuit under examination in this introductory discussion.
C. M. D. Hamo-ay
Fig. 10.4
The network of Fig. 10.3 following removal of the dc
supply and insertion of the short-circuit equivalent
for the capacitors.
It is important as you progress through the modifications of the network to

define the ac equivalent that the parameters of interest such as Zi, Zo, Ii, and Io as
defined by Fig. 10.5 be carried through properly. Even though the network
appearance may change, you want to be sure the quantities you find in the reduced
network are the same as defined by the original network. In both networks the input
impedance is defined from base to ground, the input current as the base current of the
transistor, the output voltage as the voltage from collector to ground, and the output
current as the current through the load resistor RC.
Fig. 10.5
Defining the important parameters
of any system.
Fig. 10.6
Demonstrating the reason for the defined
directions and polarities.
C. M. D. Hamo-ay
The parameters of Fig. 10.5 can be applied to any system whether it has one or
a thousand components. For all the analysis to follow in this text, the directions of
the currents, the polarities of the voltages, and the direction of interest for the
impedance levels are as appearing in Fig. 10.5. In other words, the input current Ii
and output current Io are, by definition, defined to enter the system. If, in a
particular example, the output current is leaving the system rather than entering the
system as shown in Fig. 10.5, a minus sign must be applied. The defined polarities
for the input and output voltages are also as appearing in Fig. 10.5. If Vo has the
opposite polarity, the minus sign must be applied. Note that Zi is the impedance
“looking into” the system, whereas Zo is the impedance “looking back into” the
system from the output side. By choosing the defined directions for the currents and
voltages as appearing in Fig. 10.5, both the input impedance and output impedance
are defined as having positive values. For example, in Fig. 10.6 the input and output
impedances for a particular system are both resistive. For the direction of Ii and Io
the resulting voltage across the resistive elements will have the same polarity as Vi
and Vo, respectively. If Io had been defined as the opposite direction in Fig. 10.5 a
minus sign would have to be applied. For each case Zi = Vi>Ii and Zo = Vo>Io with
positive results if they all have the defined directions and polarity of Fig. 10.5. If the
output current of an actual system has a direction opposite to that of Fig. 10.5 a
minus sign must be applied to the result because Vo must be defined as appearing in
Fig. 10.5. Keep Fig. 10.5 in mind as you analyze the BJT networks in this chapter. It is
an important introduction to “System Analysis,” which is becoming so important
with the expanded use of packaged IC systems. If we establish a common ground
and rearrange the elements of Fig. 10.4, R1 and R2 will be in parallel, and RC will
appear from collector to emitter as shown in Fig. 10.7. Because the components of the
transistor equivalent circuit appearing in Fig. 10.7 employ familiar components such
as resistors and independent controlled sources, analysis techniques such as
superposition, Thévenin’s theorem, and so on, can be applied to determine the
desired quantities.
Fig. 10.7
Circuit of Fig. 10.4 redrawn for small-signal ac analysis.
Let us further examine Fig. 10.7 and identify the important quantities to be
determined for the system. Because we know that the transistor is an amplifying
C. M. D. Hamo-ay
device, we would expect some indication of how the output voltage Vo is related to
the input voltage Vi— the voltage gain. Note in Fig. 10.7 for this configuration that the
current gain is defined by ai = Io>Ii.
In summary, therefore, the ac equivalent of a transistor network is obtained by:
1. Setting all dc sources to zero and replacing them by a short-circuit equivalent

2. Replacing all capacitors by a short-circuit equivalent
3. Removing all elements bypassed by the short-circuit equivalents introduced by
steps 1 and 2
4. Redrawing the network in a more convenient and logical form
In the sections to follow, a transistor equivalent model will be introduced to

complete the ac analysis of the network of Fig. 10.7.
10.2.3 THE re TRANSISTOR MODEL

The re model for the CE, CB, and CC BJT transistor configurations will now be
introduced with a short description of why each is a good approximation to the actual
behavior of a BJT transistor.
Common-emitter Configuration
The equivalent circuit for the common-emitter configuration will be
constructed using the device characteristics and a number of approximations. Starting
with the input side, we find the applied voltage Vi is equal to the voltage Vbe with the
input current being the base current Ib as shown in Fig. 10.8.
Fig. 10.8
Finding the input equivalent circuit
for a BJT transistor.
Because the current through the forward-biased junction of the transistor is

IE, the characteristics for the input side appear as shown in Fig. 10.9a for various
levels of VBE. Taking the average value for the curves of Fig. 10.9a will result in the
single curve of Fig. 10.9b, which is simply that of a forward-biased diode.
C. M. D. Hamo-ay
Fig. 10.9
Defining the average curve for the characteristics of Fig. 10.9a.
For the equivalent circuit, therefore, the input side is simply a single diode with
a current Ie, as shown in Fig. 10.10. However, we must now add a component to the
network that will establish the current Ie of Fig. 10.10 using the output characteristics.
Fig. 10.10
Equivalent circuit for the input side
of a BJT transistor.
If we redraw the collector characteristics to have a constant b as shown in

Fig. 10.11 (another approximation), the entire characteristics at the output section can
be replaced by a controlled source whose magnitude is beta times the base current as
shown in Fig. 10.11. Because all the input and output parameters of the original
configuration are now present, the equivalent network for the common-emitter
configuration has been established in Fig. 10.12.
Fig. 10.11
Constant b characteristics.
C. M. D. Hamo-ay
Fig. 10.12
BJT equivalent circuit.
The equivalent model of Fig. 10.12 can be awkward to work with due to the
direct connection between input and output networks. It can be improved by first
replacing the diode by its equivalent resistance as determined by the level of IE, as
shown in Fig. 10.13. Recall that the diode resistance is determined by rD = 26
mV>ID. Using the subscript e because the determining current is the emitter
current will result in re = 26 mV>IE.
Fig. 10.13
Defining the level of Zi.
The result is that the impedance seen “looking into” the base of the network
is a resistor equal to beta times the value of re, as shown in Fig. 10.14. The collector
output current is still linked to the input current by beta as shown in the same
figure.
C. M. D. Hamo-ay
Fig. 10.14
Improved BJT equivalent circuit.
The equivalent circuit has therefore been defined for the ideal characteristics
of Fig. 10.11, but now the input and output circuits are isolated and only linked by
the controlled source—a form much easier to work with when analyzing networks.
Early Voltage
We now have a good representation for the input circuit, but aside from the
collector output current being defined by the level of beta and IB, we do not have a
good representation for the output impedance of the device. In reality the
characteristics do not have the ideal appearance of Fig. 10.11. Rather, they have a
slope as shown In Fig. 10.15 that defines the output impedance of the device. The
steeper the slope, the less the output impedance and the less ideal the transistor. In
general, it is desirable to have large output impedances to avoid loading down the
next stage of a design. If the slope of the curves is extended until they reach the
horizontal axis, it is interesting to note in Fig. 10.15 that they will all intersect at a
voltage called the Early voltage. This intersection was first discovered by James M.
Early in 1952. As the base current increases the slope of the line increases, resulting
in an increase in output impedance with increase in base and collector current. For a
particular collector and base current as shown in Fig. 10.15, the output impedance
can be found using the following equation:
C. M. D. Hamo-ay
Fig. 10.15
Defining the Early voltage and the output impedance of a transistor.
Typically, however, the Early voltage is sufficiently large compared with the
applied collector-to-emitter voltage to permit the following approximation.
Clearly, since Va is a fixed voltage, the larger the collector current, the less the
output impedance.
For situations where the Early voltage is not available the output impedance
can be found from the characteristics at any base or collector current using the
following equation:
For the same change in voltage in Fig. 10.15 the resulting change in current ¢IC
is significantly less for ro2 than ro1, resulting in ro2 being much larger than ro1. In
situations where the specification sheets of a transistor do not include the Early
voltage or the output characteristics, the output impedance can be determined from
the hybrid parameter hoe that is normally plotted on every specification sheet. It is a
quantity that will be described in detail.
In any event, an output impedance can now be defined that will appear as a
resistor in parallel with the output as shown in the equivalent circuit of Fig. 10.16.
C. M. D. Hamo-ay
Fig. 10.16
re model for the common-emitter transistor configuration
including effects of ro.
The equivalent circuit of Fig. 10.16 will be used throughout the analysis to
follow for the common-emitter configuration. Typical values of beta run from 50 to
200, with values of bre typically running from a few hundred ohms to a maximum of 6
kΩ to 7 kΩ. The output resistance r is typically in the range of 40 kΩ to 50 kΩ.
Common-base Configuration
The common-base equivalent circuit will be developed in much the same
manner as applied to the common-emitter configuration. The general characteristics
of the input and output circuit will generate an equivalent circuit that will
approximate the actual behavior of the device. Recall for the common-emitter
configuration the use of a diode to represent the connection from base to emitter. For
the common-base configuration of Fig. 10.17a the npn transistor employed will
present the same possibility at the input circuit. The result is the use of a diode in the
equivalent circuit as shown in Fig. 10.17b. For the output circuit, the collector current
is related to the emitter current by alpha a. In this case, however, the controlled
source defining the collector current as inserted in Fig. 10.17b is opposite in direction
to that of the controlled source of the common-emitter configuration. The direction
of the collector current in the output circuit is now opposite that of the defined
output current.
Fig. 10.17
(a) Common-base BJT transistor; (b) equivalent circuit for configuration of (a).
For the ac response, the diode can be replaced by its equivalent ac resistance
determined by re = 26 mV>IE as shown in Fig. 10.18. Take note of the fact that the
emitter current continues to determine the equivalent resistance. An additional
C. M. D. Hamo-ay
output resistance can be determined from the characteristics of Fig. 10.19 in much
the same manner as applied to the common-emitter configuration. The almost
horizontal lines clearly reveal that the output resistance ro as appearing in Fig. 18
will be quite high and certainly much higher than that for the typical common-
emitter configuration. The network of Fig. 10.18 is therefore an excellent equivalent
circuit for the analysis of most common-base configurations. It is similar in many
ways to that of the common-emitter configuration. In general, common-base
configurations have very low input impedance because it is essentially simply re.
Typical values extend from a few ohms to perhaps 50 ohms.
The output impedance ro will typically extend into the megohm range.
Because the output current is opposite to the defined Io direction, you will find in
the analysis to follow that there is no phase shift between the input and output
voltages.
For the common-emitter configuration there is a 180° phase shift.
Fig. 10.18
Common base re equivalent circuit.
Fig. 10.19
Defining Zo.
Common-Collector Configuration
For the common-collector configuration, the model defined for the
common-emitter configuration of Fig. 10.16 is normally applied rather than
defining a model for the common-collector configuration.
C. M. D. Hamo-ay
NPN versus PNP
The dc analysis of npn and pnp configurations is quite different in the sense
that the currents will have opposite directions and the voltages opposite polarities.
However, for an ac analysis where the signal will progress between positive and
negative values, the ac equivalent circuit will be the same.
10.2.4 DIFFERENT BIAS CONFIGURATIONS
10.2.4.1 Common-emitter fixed-bias Configuration
The transistor models just introduced will now be used to perform a small-
signal ac analysis of a number of standard transistor network configurations. The
networks analyzed represent the majority of those appearing in practice.
Modifications of the standard configurations will be relatively easy to examine once
the content of this chapter is reviewed and understood. For each configuration, the
effect of an output impedance is examined for completeness. The computer analysis
section includes a brief description of the transistor model employed in the PSpice and
Multisim software packages. It demonstrates the range and depth of the available
computer analysis systems and how relatively easy it is to enter a complex network
and print out the desired results. The first configuration to be analyzed in detail is the
common-emitter fixed-bias network of Fig. 10.20. Note that the input signal Vi is
applied to the base of the transistor, whereas the output Vo is off the collector. In
addition, recognize that the input current Ii is not the base current, but the source
current, and the output current Io is the collector current. The small-signal ac analysis
begins by removing the dc effects of VCC and replacing the dc blocking capacitors C1
and C2 by short-circuit equivalents, resulting in the network of Fig. 10.21.
Fig. 10.20
Common-emitter fixed-bias configuration.
C. M. D. Hamo-ay
Fig. 10.21
Network of Fig. 10.20 following the removal of
the effects of VCC, C1, and C2.
Note in Fig. 10.21 that the common ground of the dc supply and the transistor
emitter terminal permits the relocation of RB and RC in parallel with the input and
output sections of the transistor, respectively. In addition, note the placement of the
important network parameters Zi, Zo, Ii, and Io on the redrawn network. Substituting
the re model for the common-emitter configuration of Fig. 10.21 results in the network
of Fig. 10.22.
The next step is to determine b, re, and ro. The magnitude of b is typically
obtained from a specification sheet or by direct measurement using a curve tracer or
transistor
Fig. 10.22
Substituting the re model into the network of Fig. 10.21.
testing instrument. The value of re must be determined from a dc analysis of the

system, and the magnitude of ro is typically obtained from the specification sheet or
characteristics. Assuming that b, re, and ro have been determined will result in the
following equations for the important two-port characteristics of the system.
For the majority of situations RB is greater than bre by more than a factor of 10
(recall from the analysis of parallel elements that the total resistance of two parallel
C. M. D. Hamo-ay
resistors is always less than the smallest and very close to the smallest if one is much
larger than the other), permitting the following approximation:
Zo Recall that the output impedance of any system is defined as the

impedance Zo determined when Vi = 0. For Fig. 10.22, when Vi = 0, Ii = Ib = 0,
resulting in an open circuit equivalence for the current source. The result is the
configuration of Fig. 10.23. We have
If ro >= 10RC, the approximation RC || ro ~= RC is frequently applied, and
Fig. 10.23
Determining Zo for the network
of Fig. 10.22.
Av The resistors ro and RC are in parallel, and
C. M. D. Hamo-ay
If ro >= 10RC, so that the effect of ro can be ignored,
Note the explicit absence of b in Eqs. (9) and (10), although we recognize that b
must be utilized to determine re.
Phase Relationship
The negative sign in the resulting equation for av reveals that a 180° phase
shift occurs between the input and output signals, as shown in Fig. 10.24. The is a
result
of the fact that bIb establishes a current through RC that will result in a voltage
across RC, the opposite of that defined by Vo.
Fig. 10.24
Demonstrating the 180° phase shift between input and output waveforms.
Example For the network of Fig. 10.25:

a. Determine re.
b. Find Zi (with ro = ∞Ω).
c. Calculate Zo (with ro = ∞Ω).
d. Determine av (with ro = ∞Ω).
e. Repeat parts (c) and (d) including ro = 50 kΩ in all calculations and
compare results.
C. M. D. Hamo-ay
Fig. 10.25
10.2.4.2 VOLTAGE-DIVIDER BIAS
The next configuration to be analyzed is the voltage-divider bias network of Fig.

10.26. Recall that the name of the configuration is a result of the voltage-divider bias at
the input side to determine the dc level of VB. Substituting the re equivalent circuit
results in the network of Fig. 10.27. Note the absence of RE due to the low-impedance
shorting effect of the bypass capacitor, CE. That is, at the frequency (or frequencies) of
operation, the reactance of the capacitor is so small compared to RE that it is treated as
a short circuit across RE. When VCC is set to zero, it places one end of R1 and RC at
ground potential as shown in Fig. 10.27. In addition, note that R1 and R2 remain part
of the input circuit, whereas RC is part of the output circuit. The parallel combination
of R1 and R2 is defined by
C. M. D. Hamo-ay
Zi From Fig. 10.27
Fig. 10.26
Voltage-divider bias configuration.
Fig. 10.27
Substituting the re equivalent circuit into the ac equivalent network of Fig. 10.26.
Zo From Fig. 10.27 with Vi set to 0 V, resulting in Ib = 0 mA and bIb = 0 mA,
Av Because RC and ro are in parallel,
C. M. D. Hamo-ay
which you will note is an exact duplicate of the equation obtained for the fixed-
bias configuration.
Phase Relationship The negative sign of Eq. (15) reveals a 180° phase shift between Vo
and Vi.
Example For the network of Fig. 10.28, determine:

a. re.
b. Zi.
c. Zo (ro = ∞Ω).
d. av (ro = ∞Ω).
e. The parameters of parts (b) through (d) if ro = 50 kΩ and compare results.
Fig. 10.28
C. M. D. Hamo-ay
10.2.5 THE HYBRID EQUIVALENT MODEL

The hybrid equivalent model was mentioned in the earlier sections of this
chapter as one that was used in the early years before the popularity of the re model
developed. Today there is a mix of usage depending on the level and direction of the
investigation.
The re model has the advantage that the parameters are defined by the actual
operating conditions,
whereas
the parameters of the hybrid equivalent circuit are defined in general terms
for any operating conditions.
In other words, the hybrid parameters may not reflect the actual operating
conditions but simply provide an indication of the level of each parameter to expect
for general use. The re model suffers from the fact that parameters such as the output
impedance and the feedback elements are not available, whereas the hybrid
parameters provide the entire set on the specification sheet. In most cases, if the re
model is employed, the investigator will simply examine the specification sheet to
C. M. D. Hamo-ay
have some idea of what the additional elements might be. This section will show
how one can go from one model to the other and how the parameters are related.
Because all specification sheets provide the hybrid parameters and the model is still
extensively used, it is important to be aware of both models. The hybrid parameters
as shown in Fig. 10.29 are derived from the specification sheet for the 2N4400
transistor. The values are provided at a dc collector current of 1 mA and a collector-
to-emitter voltage of 10 V. In addition, a range of values is provided for each
parameter for guidance in the initial design or analysis of a system. One obvious
advantage of the specification sheet listing is the immediate knowledge of typical
levels for the parameters of the device as compared to other transistors.
Fig. 10.29
Hybrid parameters for the 2N4400 transistor.
The description of the hybrid equivalent model will begin with the general
two-port system of Fig. 10.30. The following set of equations (131) and (132) is only
one of a number of ways in which the four variables of Fig. 10.30 can be related. It is
the most frequently employed in transistor circuit analysis, however, and therefore is
discussed in detail in this chapter.
Fig. 10.30
Two-port system.
C. M. D. Hamo-ay
The parameters relating the four variables are called h-parameters, from the
word “hybrid.” The term hybrid was chosen because the mixture of variables (V
and I ) in each equation results in a “hybrid” set of units of measurement for the h-
parameters. A clearer understanding of what the various h-parameters represent
and how we can determine their magnitude can be developed by isolating each
and examining the resulting relationship. h11 If we arbitrarily set Vo = 0 (short
circuit the output terminals) and solve for h11 in Eq. (133), we find
The ratio indicates that the parameter h11 is an impedance parameter with
the units of ohms. Because it is the ratio of the input voltage to the input current
with the output terminals shorted, it is called the short-circuit input-impedance
parameter. The subscript 11 of h11 refers to the fact that the parameter is
determined by a ratio of quantities measured at the input terminals. h12 If Ii is set
equal to zero by opening the input leads, the following results for h12:
The parameter h12, therefore, is the ratio of the input voltage to the output
voltage with the input current equal to zero. It has no units because it is a ratio of
voltage levels and is called the open-circuit reverse transfer voltage ratio parameter.
The subscript 12 of h12 indicates that the parameter is a transfer quantity
determined by a ratio of input (1) to output (2) measurements. The first integer of
the subscript defines the measured quantity to appear in the numerator; the
second integer defines the source of the quantity to appear in the denominator.
The term reverse is included because the ratio is an input voltage over an output
voltage rather than the reverse ratio typically of interest. h21 If in Eq. (134) Vo is
set equal to zero by again shorting the output terminals, the following results for
h21:
C. M. D. Hamo-ay
Note that we now have the ratio of an output quantity to an input quantity.
The term forward will now be used rather than reverse as indicated for h12. The
parameter h21 is the ratio of the output current to the input current with the output
terminals shorted. This parameter, like h12, has no units because it is the ratio of
current levels. It is formally called the short circuit forward transfer current ratio
parameter. The subscript 21 again indicates that it is a transfer parameter with the
output quantity (2) in the numerator and the input quantity (1) in the denominator.
h22 The last parameter, h22, can be found by again opening the input leads to set
I1 = 0
and solving for h22 in Eq. (134):
Because it is the ratio of the output current to the output voltage, it is the
output conductance parameter, and it is measured in siemens (S). It is called the open-
circuit output admittance parameter. The subscript 22 indicates that it is determined by a
ratio of output quantities.
Because each term of Eq. (133) has the unit volt, let us apply Kirchhoff’s voltage
law BJT AC AnAlysis “in reverse” to find a circuit that “fits” the equation. Performing
this operation results in the circuit of Fig. 10.31. Because the parameter h11 has the
unit ohm, it is represented by a resistor in Fig. 10.31. The quantity h12 is dimensionless
and therefore simply appears as a multiplying factor of the “feedback” term in the
input circuit.
Because each term of Eq. (134) has the units of current, let us now apply
Kirchhoff’s current law “in reverse” to obtain the circuit of Fig. 10.32. Because h22 has
the units of admittance, which for the transistor model is conductance, it is
represented by the resistor symbol. Keep in mind, however, that the resistance in
ohms of this resistor is equal to the reciprocal of conductance (1yh22).
The complete “ac” equivalent circuit for the basic three-terminal linear device is
indicated in Fig. 10.33 with a new set of subscripts for the h-parameters. The notation
of Fig. 10.33 is of a more practical nature because it relates the h-parameters to the
resulting ratio obtained in the last few paragraphs. The choice of letters is obvious
from the following listing:
C. M. D. Hamo-ay
h11 -> input resistance -> hi

h12 -> reverse transfer voltage ratio -> hr
h21 -> forward transfer current ratio -> hf
h22 -> output conductance -> ho
Fig. 10.31
Hybrid input equivalent circuit.
Fig. 10.32
Hybrid output equivalent circuit.
Fig. 10.33
Complete hybrid equivalent circuit.
The circuit of Fig. 10.33 is applicable to any linear three-terminal electronic

device or system with no internal independent sources. For the transistor, therefore,
even though it has three basic configurations, they are all three-terminal configurations,
C. M. D. Hamo-ay
so that the resulting equivalent circuit will have the same format as shown in Fig.
10.33. In each case, the bottom of the input and output sections of the network of Fig.
10.33 can be connected as shown in Fig. 10.34 because the potential level is the same.
Essentially, therefore, the transistor model is a three-terminal two-port system. The
h-parameters, however, will change with each configuration. To distinguish which
parameter has been used or which is available, a second
Fig. 10.34
Common-emitter configuration: (a) graphical symbol; (b) hybrid equivalent circuit.
subscript has been added to the h-parameter notation. For the common-base
configuration, the lowercase letter b was added, whereas for the common-emitter
and common-collector configurations, the letters e and c were added, respectively.
The hybrid equivalent network for the common-emitter configuration appears with
the standard notation in Fig. 10.34. Note that Ii = Ib, Io = Ic, and, through an
application of Kirchhoff’s current law, Ie = Ib + Ic.
The input voltage is now Vbe, with the output voltage Vce. For the common-
base configuration of Fig. 10.35, Ii = Ie, Io = Ic with Veb = Vi and Vcb = Vo. The
networks of Figs. 10.34 and 10.35 are applicable for pnp or npn transistors.
Fig. 10.35
Common-base configuration: (a) graphical symbol; (b) hybrid equivalent circuit.
C. M. D. Hamo-ay
The fact that both a Thévenin and a Norton circuit appear in the circuit of Fig.
10.33 was further impetus for calling the resultant circuit a hybrid equivalent circuit.
Two additional transistor equivalent circuits, called the z-parameter and y-parameter
equivalent circuits, use either the voltage source or the current source, but not both, in
the same equivalent circuit.
For the common-emitter and common-base configurations, the magnitude of hr
and ho is often such that the results obtained for the important parameters such as Zi,
Zo, av, and ai are only slightly affected if hr and ho are not included in the model.
Because hr is normally a relatively small quantity, its removal is approximated by hr =
0 and hrVo = 0, resulting in a short-circuit equivalent for the feedback element as
shown in Fig. 10.36. The resistance determined by 1>ho is often large enough to be
ignored in comparison to a parallel load, permitting its replacement by an open-circuit
equivalent for the CE and CB models, as shown in Fig. 10.36.
The resulting equivalent of Fig. 10.37 is quite similar to the general structure of
the common-base and common-emitter equivalent circuits obtained with the re model.
In fact,
Fig. 10.36
Effect of removing hre and hoe from the hybird
equivalent circuit.
Fig. 10.37
approximate hybrid equivalent model.
the hybrid equivalent and the re models for each configuration are repeated in Fig.
10.38 for BJT AC AnAlysis comparison. It should be reasonably clear from Fig. 10.38a
that
C. M. D. Hamo-ay
hie = bre (139)

and hfe = bac (140)
From Fig. 10.38b,
hib = re (141)
and hfb = -a ~= -1 (142)
In particular, note that the minus sign in Eq. (142) accounts for the fact that
the current source of the standard hybrid equivalent circuit is pointing down rather
than in the actual direction as shown in the re model of Fig. 10.38b.
Fig. 10.38
Hybrid versus re model: (a) common-emitter configuration; (b) common-base configuration.
Example Given IE = 2.5 mA, hfe = 140, hoe = 20 mS (mmho), and hob = 0.5 mS as
shown in Fig. 10.39,
determine:
a. The common-emitter hybrid equivalent circuit.
b. The common-base re model.
C. M. D. Hamo-ay
Solution:
Fig. 10.39
Common-emitter hybrid equivalent circuit for the parameters of Example 19.
Fig. 10.40
Common-base re model for the parameters of Example.
ASSESSMENT
1. Give the advantages for each small signal analysis (re, hybrid, and hybrid pi) of BJT.
(30 points)
2. What do you mean by Two-port Systems Approach? (20 points)
10.3 References
10.4 Acknowledgment
C. M. D. Hamo-ay

Learning Packet 3 Elex 1

Uploaded by

Copyright:

Available Formats

You might also like

Learning Packet 3 Elex 1

Uploaded by

Document Information

Original Description:

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

Learning Packet 3 Elex 1

Uploaded by

Copyright:

Available Formats

3 | Electronic Devices and Circuits 1

UNIT 8: BIPOLAR JUNCTION TRANSISTOR

8.0 Intended Learning Outcomes

Figure 8.1. Coinventors of the first transistor at Bell Laboratories

8.2 Topics/Discussion (with Assessment/Activities)

8.2.1 TRANSISTOR CONSTRUCTION

Figure 8.2. The first transistor

Figure 8.3. Types of Transistors: (a) pnp; (b) npn

8.2.2 TRANSISTOR OPERATION

One p–n junction of a transistor is reverse-biased, whereas the other is

Figure 8.4. Biasing a transistor: (a) forward-bias; (b) reverse-bias

IC = ICmajority + ICOminority (2)

For general-purpose transistors, IC is measured in milliamperes and ICO is

8.2.3 COMMON-BASE CONFIGURATION

In the active region the base–emitter junction is forward-biased, whereas the

Fig. 8.7 Output or collector characteristics for a common-base transistor amplifier.

In the cutoff region the base–emitter and collector–base junctions of a

In the saturation region the base–emitter and collector–base junctions are

adc =IC*IE (5)

IC = aIE + ICBO (6)

For the characteristics of Fig. 8.8 when IE 5 0 mA, IC is therefore equal to

8.2.4 COMMON-EMITTER CONFIGURATION

Fig. 8.10. Characteristics of a silicon transistor in the common-emitter configuration:

In the active region of a common-emitter amplifier, the base–emitter junction

configuration can be employed for voltage, current, or power amplification. The

If we consider the case discussed above, where IB 5 0 A, and substitute a

If ICBO were 1 mA, the resulting collector current with IB 5 0 A would be

In other words, the region below IB 5 0 mA is to be avoided if an undistorted

Fig. 8.11 Fig. 8.12

where IC and IB are determined at a particular operating point on the characteristics.

8.2.5 COMMON-COLLECTOR CONFIGURATION

A common-collector circuit configuration is provided in Fig. 8.14 with the

Fig. 8.14. Common-collector configuration used for impedance-matching purposes.

UNIT 9: DC BIASING - BJTs

9.0 Intended Learning Outcomes

any increase in ac voltage, current, or power is the result of a transfer of

The analysis or design of any electronic amplifier therefore has two

Figure 9.1. BJT DC biasing.

9.2 Topics/Discussion (with Assessment/Activities)

9.2.1 FIXED-BIAS CONFIGURATION

Fig. 9.2 Fig. 9.3

Forward bias of base–emitter

+VCC - IBRB - VBE = 0

VCE + ICRC - VCC = 0

9.2.2 EMITTER-BIAS CONFIGURATION

variations. The improved stability will be demonstrated through a numerical example

+VCC - IBRB - VBE - IERE = 0 (15)

Substituting for IE in Eq. (15) results in

VCC - IBRB - VBE - (b + I)IBRE = 0

Grouping terms then provides the following:

-IB(RB + (b + 1)RE) + VCC - VBE = 0

Multiplying through by (-1), we have

IB(RB + (b + 1)RE) - VCC + VBE = 0

with IB(RB + (b + 1)RE) = VCC – VBE

and solving for IB gives

The collector–emitter loop appears in Fig. 9.13. Writing Kirchhoff’s voltage

+IERE + VCE + ICRC - VCC = 0

Substituting IE IC and grouping terms gives