VLSI Design (MEL G621 )

Lecture 4
(driving characteristics of MOSFET)

Instructor

Dr. Apurba Chakraborty

Assistant Professor
Department of Electrical and Electronics Engineering
BITS Pilani, K K Birla Goa Campus

Date: 15/9/2022
Short channel effects:
• Velocity saturation,
• VTh variation due to Short channel,
• Drain induced barrier lowering (DIBL)
• subthreshold conduction and hot carrier effects.
Velocity saturation Effect:
Electron saturation velocity= 107 cm/s. hole saturation velocity = 8x106 cm/s
 Velocity saturation Effect:
By using revised velocity saturation model, the drain current in linear region

Linear region 𝑽𝑫𝑺 < 𝑽𝑫𝑺𝑨𝑻

VDS/L can be interpreted as the average electric field in channel. For long channel device κ is almost 1 and
simplifies the traditional current equation. For short channel device, κ is smaller than 1 which means the
delivered current is smaller than what would be normally expected.

When 𝑉𝐷𝑆 = 𝑉𝐷𝑆𝐴𝑇 , the electric field in the channel will reach the critical value and the carriers at the drain become
velocity saturated. The saturation current 𝐼𝐷𝑆𝐴𝑇

Saturation region 𝑽𝑫𝑺 > 𝑽𝑫𝑺𝑨𝑻

Now, at VDS= VDSAT, current in both parts must be equal,

𝑊 𝑉𝐷𝑆 2
κ 𝑉𝐷𝑆𝐴𝑇 µ𝑛 𝐶𝑜𝑥 𝑉𝐺𝑆 − 𝑉𝑇 𝑉𝐷𝑆 − = 𝑉𝑆𝐴𝑇 𝐶𝑜𝑥 𝑊(𝑉𝐺𝑆 − 𝑉𝑇 − 𝑉𝐷𝑆𝐴𝑇 )
𝐿 2

Which will lead to

𝑉𝐶 𝑉𝐺𝑇 (𝑉𝐺𝑇 )2
𝑉𝐷𝑆𝐴𝑇 = and new 𝐼𝐷𝑆𝐴𝑇 = 𝑉𝑆𝐴𝑇 𝐶𝑜𝑥 𝑊(𝑉𝐺𝑇 − 𝑉𝐷𝑆𝐴𝑇 ) = 𝑉𝑆𝐴𝑇 𝐶𝑜𝑥 𝑊( )
𝑉𝐶 +𝑉𝐺𝑇 𝑉𝐶 +𝑉𝐺𝑇

{here 𝑉𝐶 = 𝐸𝐶 𝐿 , 𝑉𝐺𝑇 = 𝑉𝐺𝑆 − 𝑉𝑇 }

If 𝑉𝐶 ≫ 𝑉𝐺𝑇 , 𝑣𝑒𝑙𝑜𝑐𝑖𝑡𝑦 𝑠𝑎𝑡𝑢𝑟𝑎𝑡𝑖𝑜𝑛 𝑒𝑓𝑓𝑒𝑐𝑡𝑠 𝑎𝑟𝑒 𝑣𝑒𝑟𝑦 𝑙𝑒𝑠𝑠 𝑎𝑛𝑑 𝑐𝑢𝑟𝑟𝑒𝑛𝑡 𝑒𝑞𝑢𝑎𝑡𝑖𝑜𝑛 𝑏𝑒𝑐𝑜𝑚𝑒𝑠 𝑠𝑞𝑢𝑎𝑟𝑒 𝑙𝑎𝑤 𝑚𝑜𝑑𝑒𝑙.

𝑏𝑢𝑡 𝑖𝑓 𝑉𝐶 ≪ 𝑉𝐺𝑇 ,

𝐼𝐷𝑆𝐴𝑇 = 𝑉𝑆𝐴𝑇 𝐶𝑜𝑥 𝑊𝑉𝐺𝑇

Here drain is linearly dependent on gate to source voltage in velocity saturation regime.
Velocity saturation Effect:

• For short channel device with

larger 𝑉𝐺𝑇 (𝑉𝐺𝑆 − 𝑉𝑇 ), the device
enters in saturation before 𝑉𝐷𝑆
reaches (𝑉𝐺𝑆 − 𝑉𝑇 ). Short channel
device therefor experience an
extended saturation region.
• The saturation current 𝐼𝐷𝑆𝐴𝑇
shows a linear dependence with
respect to the gate source voltage
𝑉𝐺𝑆 which is in contrast with the
squared dependence in the long
channel devices.