2N4416/2N4416A/SST4416

Vishay Siliconix

N-Channel JFETs

PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
2N4416 −v6 −30 4.5 5
2N4416A −2.5 to −6 −35 4.5 5
SST4416 −v6 −30 4.5 5

FEATURES BENEFITS APPLICATIONS

D Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mixer
2N4416/A, Gps 13 dB (typ) @ D Very High System Sensitivity D Oscillator
400 MHz D High Quality of Amplification D Sample-and-Hold
D Very Low Noise: 3 dB (typ) @ D High-Speed Switching Capability D Very Low Capacitance Switches
400 MHz
D High Low-Level Signal Amplification
D Very Low Distortion
D High AC/DC Switch Off-Isolation

DESCRIPTION
The 2N4416/2N4416A/SST4416 n-channel JFETs are The TO-206AF (TO-72) hermetically-sealed package is
designed to provide high-performance amplification at high available with full military processing (see Military
frequencies. Information.) The TO-236 (SOT-23) package provides a
low-cost option and is available with tape-and-reel options
(see Packaging Information). For similar products in the
TO-226AA (TO-92) package, see the J304/305 data sheet.

TO-206AF
(TO-72)
TO-236
(SOT-23)
S C

1 4 D 1

3 G

S 2
2 3
D G

Top View
Top View
2N4416
2N4416A SST4416 (H1)*

*Marking Code for TO-236

For applications information see AN104.

Document Number: 70242 www.vishay.com

S-50147—Rev. H, 24-Jan-05 1
2N4416/2N4416A/SST4416
Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage : Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150 _C
(2N/SST4416) . . . . . . . . . . . . . . . . . . . . . −30 V
Power Dissipation : (2N Prefix)a . . . . . . . . . . . . . . . . . . . . . . 300 mW
(2N4416A) . . . . . . . . . . . . . . . . . . . . . . . . . −35 V
(SST Prefix)b . . . . . . . . . . . . . . . . . . . . 350 mW
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C
Notes
Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . −65 to 200 _C a. Derate 2.4 mW/_C above 25_C
(SST Prefix) . . . . . . . . . . . . . . . . . −65 to 150_C b. Derate 2.8 mW/_C above 25_C

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TA = 25_C UNLESS NOTED)

Limits
2N4416 2N4416A SST4416

Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit
Static
Gate-Source
V(BR)GSS IG = −1 mA , VDS = 0 V −36 −30 −35 −30
Breakdown Voltage V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 1 nA −3 −6 −2.5 −6 −6
Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 10 5 15 5 15 5 15 mA
VGS = −20 V, VDS = 0 V (2N) −2 −100 −100 pA
TA = 150_C −4 −100 −100
Gate Reverse Current IGSS
VGS = −15 V, VDS = 0 V (SST) −0.002 −1 nA
TA = 125_C −0.6
Gate Operating Current IG VDG = 10 V, ID = 1 mA −20
pA
Drain Cutoff Currentc ID(off) VDS = 10 V, VGS = −6 V 2
Drain-Source On-Resistancec rDS(on) VGS = 0 V, ID = 300 mA 150 W
Gate-Source
VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Forward Voltagec

Dynamic
Common-Source
gfs 6 4.5 7.5 4.5 7.5 4.5 7.5 mS
Forward Transconductanceb VDS = 15 V, VGS = 0 V
Common-Source f = 1 kHz
gos 15 50 50 50 mS
Output Conductanceb
Common-Source
Ciss 2.2 4 4
Input Capacitance
Common-Source VDS = 15 V, VGS = 0 V
Crss 0.7 0.8 0.8 pF
Reverse Transfer Capacitance f = 1 MHz
Common-Source
Coss 1 2 2
Output Capacitance
Equivalent Input VDS = 10 V, VGS = 0 V nV⁄
en 6
Noise Voltagec f = 1 kHz √Hz

www.vishay.com Document Number: 70242

2 S-50147—Rev. H, 24-Jan-05
 2N4416/2N4416A/SST4416
Vishay Siliconix

HIGH-FREQUENCY SPECIFICATIONS FOR 2N4416/2N4416A (TA = 25_C UNLESS NOTED)

Limits
100 MHz 400 MHz

Parameter Symbol Test Conditions Min Max Min Max Unit

Common Source Input Conductanced giss 100 1,000

Common Source Input Susceptanced biss 2,500 10,000
Common Source Output Conductanced goss VDS = 15 V, VGS = 0 V 75 100 mS
m
Common Source Output Susceptanced boss 1,000 4,000
Common Source Forward Transconductanced gfs 4,000
Common-Source Power Gaind Gps VDS = 15 V, ID = 5 mA 18 10
dB
Noise Figured NF RG = 1 kW 2 4
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH
b. Pulse test: PW v300 ms duty cycle v3%.
c. This parameter not registered with JEDEC.
d. Not a production test.

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Drain Current and Transconductance On-Resistance and Output Conductance

vs. Gate-Source Cutoff Voltage vs. Gate-Source Cutoff Voltage
20 10 500 100

rDS @ ID = 300 mA, VGS = 0 V

rDS(on) − Drain-Source On-Resistance ( Ω )

gos @ VDS = 10 V, VGS = 0 V

gfs − Forward Transconductance (mS)
IDSS − Saturation Drain Current (mA)

IDSS 8 f = 1 kHz 80
16 400

gos − Output conductance (µS)

rDS 60
12 gfs 6 300
gos

8 4 200 40

4 IDSS @ VDS = 10 V, VGS = 0 V 2 100 20

gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz

0 0 0 0
0 −2 −4 −6 −8 −10 0 −2 −4 −6 −8 −10
VGS(off) − Gate-Source Cutoff Voltage (V) VGS(off) − Gate-Source Cutoff Voltage (V)

Output Characteristics Output Characteristics

10 15
VGS(off) = −2 V VGS(off) = −3 V

8 12
VGS = 0 V VGS = 0 V
ID − Drain Current (mA)

ID − Drain Current (mA)

6 −0.2 V 9 −0.3 V

−0.4 V −0.6 V

4 6 −0.9 V
−0.6 V
−1.2 V
−0.8 V
−1.0 V −1.5 V
2 3
−1.2 V
−1.8 V

0 −1.4 V 0
0 2 4 6 8 10 0 2 4 6 8 10
VDS − Drain-Source Voltage (V) VDS − Drain-Source Voltage (V)

Document Number: 70242 www.vishay.com

S-50147—Rev. H, 24-Jan-05 3
2N4416/2N4416A/SST4416
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Output Characteristics Output Characteristics
5 5
VGS(off) = −2 V VGS = 0 V
VGS(off) = −3 V
VGS = 0 V
4 4
−0.2 V −0.3 V
ID − Drain Current (mA)

ID − Drain Current (mA)

−0.4 V −0.6 V
3 3 −1.2 V
−0.6 V −0.9 V
−1.5 V
2 −0.8 V 2
−1.8 V
−1.0 V

1 −1.2 V 1 −2.1 V

−1.4 V

0 0
0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0

VDS − Drain-Source Voltage (V) VDS − Drain-Source Voltage (V)

Transfer Characteristics Transfer Characteristics

10 10
VGS(off) = −2 V VDS = 10 V VGS(off) = −3 V VDS = 10 V

8 8

TA = −55_C TA = −55_C
ID − Drain Current (mA)

ID − Drain Current (mA)

6 25_C 6 25_C

4 125_C 4
125_C

2 2

0 0
0 −0.4 −0.8 −1.2 −1.6 −2 0 −0.6 −1.2 −1.8 −2.4 −3
VGS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V)

Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltgage

10 10
VGS(off) = −3 V VDS = 10 V
VGS(off) = −2 V VDS = 10 V
f = 1 kHz
f = 1 kHz
8 8
gfs − Forward Transconductance (mS)

gfs − Forward Transconductance (mS)

TA = −55_C TA = −55_C
6 6
25_C 25_C

4 4
125_C 125_C

2 2

0 0
0 −0.4 −0.8 −1.2 −1.6 −2 0 −0.6 −1.2 −1.8 −2.4 −3
VGS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V)

www.vishay.com Document Number: 70242

4 S-50147—Rev. H, 24-Jan-05
 2N4416/2N4416A/SST4416
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current
300 100
g fs R L
rDS(on) − Drain-Source On-Resistance ( Ω )

TA = 25_C
AV + 1 ) R g
L os
240 80 Assume VDD = 15 V, VDS = 5 V
10 V
VGS(off) = −2 V
RL + ID

AV − Voltage Gain
180 60

−3 V
120 40 VGS(off) = −2 V

60 20
−3 V

0 0
0.1 ID − Drain Current
1 (mA) 10 0.1 ID − Drain Current
1 (mA) 10

Common-Source Input Capacitance Common-Source Reverse Feedback

vs. Gate-Source Voltage Capacitance vs. Gate-Source Voltage
5 3
f = 1 MHz f = 1 MHz
Crss − Reverse Feedback Capacitance (pF)

4 2.4
Ciss − Input Capacitance (pF)

3 1.8

VDS = 0 V
VDS = 0 V
2 1.2

10 V 10 V
1 0.6

0 0
0 −4 −8 −12 −16 −20 0 −4 −8 −12 −16 −20
VGS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V)

Input Admittance Forward Admittance

100 100
TA = 25_C TA = 25_C
VDS = 15 V VDS = 15 V
VGS = 0 V VGS = 0 V
Common Source Common Source
bis
10 10
gis gfs
(mS)

(mS)

−bfs

1 1

0.1 0.1
100 200 500 1000 100 200 500 1000
f − Frequency (MHz) f − Frequency (MHz)

Document Number: 70242 www.vishay.com

S-50147—Rev. H, 24-Jan-05 5
2N4416/2N4416A/SST4416
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Reverse Admittance Output Admittance
10 10
TA = 25_C
VDS = 15 V bos
VGS = 0 V −brs
Common Source

1 1

gos
(mS)

(mS)
−grs
0.1 0.1
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source

0.01 0.01
100 200 500 1000 100 200 500 1000
f − Frequency (MHz) f − Frequency (MHz)

Common-Source Forward
Gate Leakage Current Transconductance vs. Drain Current
100 nA 10
IG @ ID = 5 mA
VGS(off) = −3 V VDS = 10 V
f = 1 kHz
1 mA
10 nA 8
gfs − Forward Transconductance (mS)

0.1 mA
1 nA TA = 125_C
TA = −55_C
IG − Gate Leakage

6
IGSS
100 pA @ 25_C
5 mA 125_C
4
10 pA 1 mA
125_C
0.1 mA
TA = 25_C 2
1 pA
IGSS @ 25_C

0.1 pA 0
0 4 8 12 16 20 0.1 1 10
VDG − Drain-Gate Voltage (V) ID − Drain Current (mA)

Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current
20 20
VDS = 10 V VGS(off) = −3 V VDS = 10 V
f = 1 kHz
gos − Output Conductance (µS)

16 16
Hz

TA = −55_C

12 12
en − Noise Voltage nV /

25_C
8 8

125_C
ID = 5 mA
4 4
VGS = 0 V

0 0
10 100 1k 10 k 100 k 0.1 1 10
f − Frequency (Hz) ID − Drain Current (mA)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70242.

www.vishay.com Document Number: 70242

6 S-50147—Rev. H, 24-Jan-05
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Disclaimer

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Revision: 18-Jul-08 1