Gas delivery schematic diagram

mas flowcontrolerGnt.ro/ValvePres ureR gulator

質量流量控制器 Mass Flow Controller

Control Valve
Pressure Regulator
 Oxidation source
• Dry oxidation -- by high-purity oxygen
• Wet oxidation -- by water vapor
– Bubble systems
– Flushing system
• Hydrogen and oxygen, H2 + O2 H2O
• Use ________
chlorine to improve quality of gate
-
oxide ce
Ǖk
– Anhydrous hydrogen chloride (無⽔氯化氫), HCl
– Trichlorethylene (三氯⼄烯TCE),Trichloroethane
(三氯⼄烷TCA)
 Diffusion (dopant) source
• P type dopant
– _______
1321⼗ 6 smell like burnt chocolate and sweet taste
– Toxic flammable and explosive
• N type dopant
– _______
PH3 smell like rotten fish
– _______smell
Astb like the taste of garlic
– Both are toxic, flammable and explosive
• Purge gas
– N2
 多 晶 Si Deposition source
• Polycrystalline silicon and silicon nitride:
– _________-spontaneous
Silanel 外141 combustion (⾃燃), toxic and
explosive
Sithlh
– ___________-
Dichlorosilane extremely flammable

• Silicon nitride :
– SiH4 or SiH2Cl2 +______-pungent
NH3 (刺⿐的),
uncomfortable taste, corrosive
• Polysilicon dopant
– _____,
132 Ho _____,
Ptb _____
Astb

• Purge gas
– N2
 Annealing (退火) source

• Most of the annealing process use - purity

________.
nitrogen
• H2O (O2)(gas) often used under PSG or BPSG
reflow process.

STILow-puritynit.ro
• _Oxygen__ annealing used in the shallow trench
insulation process by undoped silicate glass
chemical mechanical polishing (CMP) process.
• ________________________is
gen used in the idle
blow purification process.
 The reaction chamber
• High purity quartz
• Pros
– ____________
Hightemperaturestability
• Cons
– ____________
fragile
– ____________
somemetalions
– ________________________
mayproduceicesnowflakespolycrystalline
structure abovelzoóc
 Quartz tube cleaning
• Important to avoid particulate contamination
• Outside quartz tube
– Require _________________
hydrofluoricacid 11TH storage tank
– HF can remove a thin layer of quartz for every
cleaning cycle Limit lifetime of quartz
• Inside the reaction chamber
– Plasma generated inside the tube
– Plasma generated from the _________
NF3
decomposition (fluorine radical) that remove
pollutant
 Silicon carbide tube
• Pros (compared to quartz)
– _____________
Highthermalstubility
– _____________
Betterbarrierfrommetalionlthanquartz )
• Cons
– ___________
Heavg
– _____________
Expensive
 Vertical quartz furnace
Compared to horizontal quartz furnace~

• Process tube is placed in a vertical direction-

____________
Smallfootprint
• ________
Better pollution control
• _________
Better wafer handling
• ________
Lower maintenance costs and higher wafer
processing capacity
 Summary on furnace
• Often used in thermal process

temperaturewnt.ro/gasdehvery
• Comprises of __________ system,
_________ system, _________, _________
processchamberwaferload.mg
system and _________system.
gasexhaust
• Vertical furnace is widely used because of
_________, _________and _________.
smallfootprintgoodcontaminationlowermainte.name
control
• _________
Precisetemp and _________ are the key costs
factors. cont.ro/Unif0rmthermaldistribution
,
 Application of oxidation
Si 02
• _________
Diffusiou Barrier
• _________
Surfacepassivation
屏蔽 氧化層 lscreenoxide)
– ______________
襯墊 氧化層 lpadoxide)
– ______________
– 阻擋氧化層 (barrier oxide)
– 犧牲氧化層 (sacrificial Oxide)
• Insulation
_________
– field oxidation (e.g., trench)
• gate oxide layer
Screen oxide layer (or _______)
hardmask

光罩
 Application of pad oxide layer
• Buffer for __________by
hightensile silicon nitride
• Prevent defects induced by stress

Pad oxide layer

Silicon nitride

Silicon substrate
Clean before Oxidation

Remove
• ________________
Partides
• ______________
Organicresidues
• ______________
Inorganicresidues
• ______________
Nativeoxide
 Removing particles before
oxidization
• After the high-purity deionized water rinse ,
using ______________solution.
H 50
2 4 以 02
:

• Washed with deionized water, spin-dried

and / or drying (100 to 125 ° C). Then
purification by high pressure or heating in
immersed bath.
 Removing organic contaminant
before oxidization
• Strong oxidizing agents can remove organic
contaminants.
• After rinsing with deionized water, using
Hz 504
_________: _________
Hz 02 or _________:
NHYOH
_________
H 202 solution
• Wash with deionized water, spin-dried (100
to 125 ° C) , purification by high pressure or
heating.
Removing inorganic contaminants
before oxidization
• _________:
HCI _________
Hzo

• Washed with deionized water, spin-dried ,

heated @ (100 to 125 ° C).
 Removing native oxide layer
before oxidization
• _________:
HF _________.
Hzo

• Washed with deionized water, spin-dried

heated @ (100 to 125 ° C).
 Reaction mechanism of the
oxidation
• Si + O2 SiO2
• Oxygen from the gas; silicon from the
__________
Silhconsubstrate
• Oxygen molecules must _____
diffuse through the
oxide layer to react with the underlying
silicon atoms
• The thicker the SiO2 film, the ______
lower the
growth rate of the SiO2
 Oxidation rate

Linear growth region

T B
X=t
h A
e
th Diffusion limited region
ic
_X=________
Bt
k
n
es Oxidation time
s
of
 th

Wet (steam) oxidation

• Si + 2H2O SiO2 + 2H2
• H2O dissociates into H with H-O under high
temperature
faster
• H-O diffuses ___________(faster/slower) in
SiO2 than in oxygen
• Growth rate by wet oxidation is________
higher
(higher/lower) than by dry oxygen oxidatio.
 Oxidation rate-Wafer orientation

• _________(100)/(111)
1 1 1 surface has a higher
oxidation rate than _________(100)/(111)
1 00
because (111) surface have more silicon
atoms on a Si surface.
 Dangling bonds caused by interface
states charge

Dangling bond
Danglingbond
 High Pressure Oxidation

• A _______
faster growth rate
• Reduce the oxidation temperature:
________
latm increase growth rate
• A high dielectric strength
 Summary of oxidation
• Oxidation of silicon
• High stability and relatively easy
• Application
– Insulation, screening, pad , barrier, gate
oxide layer, etc.
• wet /dry oxidation process -advanced IC
use _______
dry oxidation process-thin gate
oxide uses Rapid thermal oxidation
(RTO) and annealing process
 Diffusion
• Diffusion is a physical phenomenon
• Dispersal direction from a _________
high
concentration to a _________
low

concentration
• _________as
Sil dioxideicon the shielding layer (screen
oxide) under diffusion
• Widely used in the doping process of
semiconductor manufacturing
 Diffusion

• Substituted by________________process,
ion implantion
because of implantation has better process
control
• Still in use in a ________
well formation (well)
 Thermal budget (熱積存)
• Diffusion of dopant atoms ________
THcreases at an elevated

temperature (T)
D = D0 exp (-EA/ KT)
• Small pattern size and space has ______(high/low)
l
0 w

thermal budget
• The drive-in (diffusion) of thermal budget decides the
following time and temperature used in ion
implantation and thermal process
• i.e., Thermal budget- What is the budget of time and
temp. can be totally used
 Dopant diffusion process
• Both the dopant
____________and
oucentration _______________
juntion depth
is temperature dependent
• No way to separately control a single factor
• Diffusion of the dopants is isotropic
• Substituted by ____________________
ion
implantation process
 Dopant diffusion process p-type
• Oxidation, lithography and etch
• Pre-deposition 預積:
___________________________
BHo + 2 O >
B O 3 + 3 H 20
2

• Oxidization:
2 B2O3 + 3 Si 3 SiO2 + 4 B
2 H2O + Si SiO2 + 2 H2
• Drive-in
– Diffusion of boron into the silicon
substrate
 Dopant diffusion process n-type
• Oxidation, lithography and etch
• Pre-deposition 預積:
_______________________
: poclst 30 2 O + 3 Cl
2 P
3 2

• Oxidization:
________________________
2P O 5 + 55 T
2
5 SiO + 4 P
>
2

Phosphorus concentration in the silicon surface

• Drive-in
– Phosphorus diffusion silicon substrate
Application of Diffusion: drive-in
• Well require a deep junction depth
• If the doping in well is replaced by ion
implantation, it requires very high ______
energy
• Dopant diffusion can help drive the desired
junction depth by further _______
annealing
退火