Electronic Devices

Tutorial -5
8-10-2022
 Question -1
A silicon sample is maintained at 300 K and it is characterized by
the energy band diagrams as shown below in Fig. a and Fig. b

i) Do the equilibrium condition prevails ?

ii) Sketch the electrostatic potential (V) and electric field as a

function x. Also, sketch n and p (on log scale) as a function x.
 Question -2
A silicon sample is maintained at 300 K and it is characterized by
the energy band diagrams as shown below in Fig. a and Fig. b

i) Do the equilibrium condition prevails ?

ii) Sketch the electrostatic potential (V) and electric field as a

function x. Also, sketch n and p (on log scale) as a function x.
 Question 3
A junction is designed with NA = 1017/cm3 and ND = 1014 cm-3. If
the diode is operated at 300 K. Assume ni = 1010 cm-3. Find

i) Built-in- Voltage (Ans: Vbi = 0.656 V)

ii) Extension of the depletion width towards n-side as well as p-
side. (Ans: xn = 2.93 mm and xp = 2.93×10-7 cm)
iii) Depletion width (Ans: W = 2.93 mm)
iv) Maximum electric field (Ans: EMAX = 4.49×103 V/cm )
 Question - 4
A germanium P-N diode has a cross-sectional area of A = 0.01
cm2. The hole density in the P-region is pp = 2.5×1017/cm3. The
electron density in the n-region is nn = 2.5×1014/cm3. The lifetime
of the hole in the n-region is Tp =100 msec. Assume ni =
2.5×1013/cm3, Dp = 44 cm2/sec. Calculate the hole current
injected from the p-region into the N-region when a forward bias
of 100 mV is applied across the diode.

Ans: Ip = 0.12 mA
 Question - 5
Consider a silicon PN-diode at T = 300 K with a p-type of doping
concentration 1018/cm3. Determine the n-type concentration
such that the maximum electric field across the is 300000 V/cm
at a reverse bias of 25 V.

Ans: ND = 1.18×1016 /cm3

 Question - 6
A Si diode at thermal equilibrium (300 K) is designed with
abrupt pn-junction such that Ec-EF= 0.21 eV in the n-region
and EF - EV = 0.18 eV in the p-region. Draw the energy
band diagram of the pn junction. (b) Determine the impurity
doping concentrations in each region. (c) Determine Vbi.
Assume Nc = 2.8×1019/cm3 and NV = 1.04×1019/cm3

Ans: ND = 8.43×1015 /cm3 (n-region), Na = 9.97×1015 /cm3 (p-region)

Vbi = 0.690 V,
 Question – 7
Consider the uniformly doped GaAs junction at T = 300 K. At
zero bias, only 20 percent of the total space charge region is to
be in the p region. The built-in potential barrier is Vbi = 1.20 V.
For zero bias condition, determine (a) Na, (b) Nd (c) xn, d) xp (e)
Emax. Assume ni = 1.8×106 cm-3

Ans: ND = 1.04×1016/cm3, Na = 4.14×1016/cm3, xn = 0. 366 mm,

xp = 0. 09166 mm and EMAX = 5.25×104 V/cm