National institute of Technology, Hamirpur (HP) [Name of Examinaton: B.Tech, (Dual Degree) End Semester Examination, 20" May, 2021 Branch: ECE (B.Tech, Dual Degree) Semester: 4" Subject: VLSI Technology Subject Code: £¢-224 ‘Time: 2 Hows (10 am— 12:00 noon) Maximum Marks: 50 Note: a. Attempt all questions ( There are 5 questions in the paper), b. Error Function Table is given at the ‘end ofthis question paper. +t (@) The graph shown in the figure Q-fla) is avaiable for Wet thermal oxidaton of <100> Si wafers. Suppose Si war with of <100> has an inal oxide thickness of 05 jm. With Wet-Oxidaton at 1000 °C, ‘what isthe requied oxidation time to oblain a toll thickness of fm? Note: Use graph to calculate the time. bm +4 (b) One micton of siicon dioxide is grown on a wafer. You subsequenty determine thatthe oxidation step has caused the doping concentration near the surface of substrate ( at the inerface between ‘ode and Si substrate) to rise compared to the bulk in the substrate Explain why this has happened, and what ths means about the segregation coefficient and the difusion of his dopantin SiO [3M] Ose Thickness om) (Q-1(c) Explain Reactive fon Etching (RIE) bom 2 (a) Arsenic is implanted at 40 keV to a dose of 1.5*10 cnr” through a 20 nm polyerystaline Si fim having same range salisties as Si substrate (range and straggle are same as in single crystal slicon and polycrystaine Si fim). Take Rp= 30 nm and ARp = 13 nm, [Note: We have polysilicon flm of 20 nm deposited ove single crystal Si substrate) tem (i) Whats the value of peak doping concentration in singe crystal S substrate and its locaton from the top surface ofthe polysicion film? {i Whats value of peak doping concentration in polysitoen fim and is location from the top surface ofthe polysicon fim? (i) What dose will penetrate through the Poly-Sifim int the single crystal Si substrate? 2 (b) A resistor isto fabricated using ps cifusion on a ghily doped n-type <100> Si wafer. Describe your process ‘ow and draw the cross-sectional view ofthe device afer each process steps. tm Q-3 (a) Suppose you have to meet a faitly tight resistivity specification during CZ crystal growth under rapid stirring condition. (a) Would you prefer to grow N type or P type crystals and Why? (b) What dopant would you use in growing N-type crystals? Why? rom 3 (b) Design a constant-dose itision of Antimony into p-type silicon wafer that gives a surface concentration of 5x10 cm and a junction depth of 1 um. The background p-type doping in the slicon is 5x10" cm, Fo this case,fnd sutable values of Dt and @, where D= dusty of he dopant lom in sien wafer, dfusion te and Q= dose. fem) (2-4 (a) You are using KOH to define a hole in a 400 tm thick silicon water (100) aa] “ as shown in he figure Q-(a), What miimum bichness of Siz is needed to Brovide a mask for KOH etching. The eleh rte for SiO, and Siis SO mfr, 267 rv respectively What sie of he opening (W) would you need onthe lop ofthe water? ee Figure Q-4 (a) : Wet oxidation graph (2-4 (b) Write the major difference between the unimited source diffusion and the ited source difusion. [9M] 5 (a) Explain Local oxidation of Silicon (LOCOS) an Shallow Trench (ST) device isolation techniques used in VLS' technology tam (25 (b) Explain briefly al the steps (substrate preparation fo resist sipping) volved in photlthography. [4M] (55 (c) Write @ short note on PVD (physical vapor deposition) techniques om 25 (d) Write @ short note on MBE (molecular beam esitaxy) [ou “End of Question Paper“ Error Function Table eae tere