See discussions, stats, and author profiles for this publication at: https://www.researchgate.

net/publication/241157034

A novel schmitt trigger with low temperature coeficient

Article · November 2008

DOI: 10.1109/APCCAS.2008.4746291

CITATIONS READS
6 777

6 authors, including:

Zhige Zou Xuecheng Zou

Huazhong University of Science and Technology Huazhong University of Science and Technology
9 PUBLICATIONS   33 CITATIONS    355 PUBLICATIONS   1,816 CITATIONS   

SEE PROFILE SEE PROFILE

Jianming Lei
Huazhong University of Science and Technology
23 PUBLICATIONS   73 CITATIONS   

SEE PROFILE

Some of the authors of this publication are also working on these related projects:

Low power medical receiver View project

All content following this page was uploaded by Zhige Zou on 11 July 2015.

The user has requested enhancement of the downloaded file.

 A Novel Schmitt Trigger with Low Temperature
Coeficient

Zhige Zou, Xuecheng Zou, Dingbin Liao, Fan Guo, Jianming Lei* and Xiaofei Chen
Department of Electronic Science and Technology, Huazhong University of Science and Technology
Wuhan, Hubei , PRC
E-mail: Leijianming@mail.hust.edu.cn

Abstract—A novel Schmitt trigger circuit, implemented by a RS article [10]–[11]. From equations (10) and (11), the threshold
trigger and two simple distinct inverters, is proposed. Its trigger voltage is weakly influenced by temperature. But, there is a
levels are determined by two CMOS inverters. Contrasted with current path from power supply to MP, MN and ground when
traditional six transistors Schmitt trigger, its temperature and VP is low and VN is high at the same time. So, power
supply voltage characteristics have been analyzed. Apply these consumption is high.
two triggers into relaxation oscillator and the result shows that
the proposed one in this paper has better performance over wide
VDD
temperature range, whose temperature coefficient from 0℃ to
85℃ is 1/5 of traditional. MP1
3V
VTR2=2V
MP3

I. INTRODUCTION MP2 VP
MP
IN OUT
Schmitt trigger is widely used in waveform shaping [1][2] IN OUT VTR1=1V
to reduce the sensitivity to noise or disturbances and relaxation MN2 VDD MN
oscillators [3]–[5]. Previous designs were concerned in low VN
voltage supply [6], low power consumption [7], high speed [8] MN3
MN1
and so on. Dynamic body effect [7], adjustable threshold
voltage [9][10] and logical threshold voltage control[10]–[12]
are presented in the early papers. But few papers considered (a) Traditional Schmitt trigger (b) Simple Inverter based Schmitt trigger
the influence of the changes of environmental temperature and Figure 1. Previous Schmitt triggers
supply voltage on the trigger threshold voltage.
Compared with the traditional 6-transistors Schmitt
trigger, a Schmitt trigger composed of two CMOS inverters
with distinct translate threshold voltage and a RS trigger has
been proposed, and the calculation results shows that the
proposed one has better temperature character than the
traditional. These two kinds of Schmitt trigger are both used
in relaxation oscillator to find the difference of the oscillator
output oscillation period under different temperature and
supply voltage.The simulation results shows that the
temperature coefficient (TC) of the proposed circuit is 1/5 of (a)Schmitt trigger based on RS trigger and inverters (b)waveform of (a)
the traditional one. Figure 2. Schmitt Trigger Proposed in this Paper

II. DESIGN OF SCHMITT TRIGGER B. Proposed Schmitt trigger

A. Traditional Schmitt trigger
Traditional 6-transistors Schmitt trigger is shown in Fig.
1(a), whose trigger threshold voltage is strongly influenced by
temperature and supply voltage variation.The reason is shown
in equations (4), (5), (8), (9) in this paper. As shown in
fig. 1(b), a simple inverter based Schmitt trigger using two
simple inverters with different threshold voltage, is reported in
Based on the principle of fig. 1(b), a novel Schmitt trigger
composed of two simple inverters and a RS trigger, is
proposed in fig. 2(a). In the Schmitt trigger, INV1 has higher
threshold voltage and INV2 has lower threshold voltage.
Apply a voltage from low to high and back to low again in the
port IN, the transfer curve of INV1, INV2 and RS trigger is
shown in Fig 2 (b). It’s clear that the circuit shown in fig. 2(a)

This work was supported by The National High Technology Research

and Development Program (863) of China (No. 2006AA01Z226).

978-1-4244-2342-2/08/$25.00 ©2008 IEEE. 1398

Authorized licensed use limited to: Huazhong University of Science and Technology. Downloaded on November 25, 2009 at 00:45 from IEEE Xplore. Restrictions apply.
 has the nature of a typical Schmitt trigger. Its threshold dVL 1
voltage is determined by the conversion voltage of INV1 from = (7)
dVDD 1 + S INV 2
high-to-low and INV2 from low-to-high, which can be
calculated from the translate threshold voltage VM of a simple Conclusion could be made from equations (4), (5), (6) and
inverter [2]: (7) that the threshold voltage of both Schmitt trigger have
almost the same relationship with supply voltage VDD, which
(VDD − VTP ) + S ⋅ VTN is a function of the circuit architecture and hysteresis.
VM =
1+ S (1) Differentiating the threshold voltage by temperature T
yields:
Where, S = kN kP , k N = μ N Cox (W / L) N ,
k P = μ P Cox (W / L) P , VTP and VTN are the threshold voltage dVH S N 13 dV
= ⋅ TN (8)
of PMOS and NMOS. To implement this Schmitt trigger, dT 1 + S N 13 dT
higher VM of INV1 and lower VM of INV2 is selected.

III. THE TEMPERATURE AND SUPPLY VOLTAGE

dVL − S P13 d VTP
SENSITIVITY OF SCHMITT TRIGGER = ⋅ (9)
dT 1 + S P13 dT
A. Traditional Schmitt trigger
Conversion threshold voltages of conventional Schmitt Differentiating the threshold voltage of proposed Schmitt
trigger given by Filanovsky [13] are: trigger by T yields

dVH 1 dV S INV 1 dVTN

V + S N 13VTN =− ⋅ TP + ⋅ (10)
VH = DD (2) dT 1 + S INV 1 dT 1 + S INV 1 dT
1 + S N 13
dVL 1 d VTP S INV 2 dV
=− ⋅ + ⋅ TN (11)
dT 1 + S INV 2 dT 1 + S INV 2 dT
S (V − | VTP |) Above equations (8)－(11) show that the TC of threshold
VL = P13 DD
1 + S P13 voltage is the function of the threshold voltages of PMOS and
(3) NMOS. Huge difference of TC between two Schmitt trigger
exists because the traditional one is a function to single
(W / L) N 1 (W / L) P1 threshold voltage of PMOS or NMOS, but the proposed one is
Where S N 13 = , S P13 = . a function to two threshold voltages of PMOS and NMOS
(W / L) N 3 (W / L) P 3 which can be canceled by each other. So, the proposed trigger
From equations (1), (2) and (3), we know that both the has a better temperature character.
threshold voltages of the traditional and proposed Schmitt
trigger are influenced by supply voltage VDD and threshold C. Application
voltage of MOS transistors. Differentiating the threshold Schmitt trigger is widely used in relaxation oschillation for
voltage by VDD obtains clock generation as Fig.3 shows.

VDD
dVH 1
= (4)
dVDD 1 + S N 13
R

dVL S P13 C
= (5)
dVDD 1 + S P13 M

Figure 3. Relaxation Oscillation based on Schmitt trigger

B. Proposed Schmitt trigger
In Fig.3, the absolute difference of the threshold voltages
Differentiating the threshold voltage of proposed Schmitt is not so important. Charging time (Discharging time can get
trigger gives at the same way) of the capacitance is

dVH 1 VDD − VL
= (6) t ch arg e = RC ln (12)
dVDD 1 + S INV 1 VDD − VH

1399

Authorized licensed use limited to: Huazhong University of Science and Technology. Downloaded on November 25, 2009 at 00:45 from IEEE Xplore. Restrictions apply.
 Where R and C are resistance and capacitance in the dX traditioanal dV
charging path, VDD is the supply voltage, VL and VH are low = (1 + S N 13 + S P13 + S N 13 ⋅ S P13 ) T (15)
dT dT
and high threshold voltage of the Schmitt trigger. Since RC is
assumed as a constant, we take into account the influence of
temperature and supply voltage to charging time.
dX proposed dVT
V − VL = 2( S INV 1 − S INV 2 ) (16)
Let X = DD and differentiating it by power supply dT dT
VDD − VH
voltage gives Equation (16) shows that two inverters cancel the
reliability of temperature to charging time. Conclusion can be
dX traditioanal (1 + S N 13 )(VTN + | VTP | S P13 ) drawn that the proposed Schmitt trigger has a better
=− (13) temperature characteristic.
dVDD S N 13 (1 + S P13 )(VDD − VTN ) 2
2
Xproposed
1.95
Xtraditional
dX proposed 1 + S INV 2 ( S INV 1 − S INV 2 ) VTP 1.9
= ⋅ (14) 1.85
dVDD 1 + S INV 1 [ S INV 2 (VDD − VTN ) + VTP ]2

Parameter X
1.8
1.75
Equations (13) and (14) show that the charging time of the 1.7
relaxation oscillator, with respect to differentiation of VDD , 1.65

is decided by the Schmitt trigger architecture, supply voltage 1.6

and threshold voltage of MOS transistors. Small difference 1.55

1.5
exists. 0 20 40 60 80
Assuming that the threshold voltages VT of NMOS and Temperature (℃)

PMOS have the same temperature character, differentiating X

by T gives 7.2
Xproposed
6.2
Xtraditional
1 5.2
Parameter X

0.9 4.2
Threshold Voltage (V)

0.8 3.2
VH,prposed
0.7 VL,proposed 2.2
VH,traditional
0.6 VL,traditional 1.2
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
0.5 VDD (V)

0.4 Figure 5. X as a function of temperature (a)

0 20 40 60 80 and supply voltage (b)
Temperature (℃)
IV. SIMULATION RESULTS
1.2 Two Schmitt trigger with same threshold voltage under
1
same room temperature and supply voltage of 1.5V have been
Threshold Voltage (V)

designed. The dimension ratios of the important MOS

0.8 transistors are listed in table 1.
0.6
TABLE I. DIMENSION RATIO OF TWO SCHMITT TRIGGERS
0.4 VH,proposed
VH,traditional MOS INV1 INV1 INV2 INV2
0.2 MP1 MP3 MN1 MN3
VL,proposed transistors (P) (N) (P) (N)
0
VL,traditional W/L
( μm ) 4/0.5 2/0.5 6.8/0.5 5/0.5 4.5/9 2/4 2.8/4 28/4
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
VDD (V) Simulation of temperature sweeping from 0 ℃ to 85 ℃
Figure 4. Threshold voltage characteristics of temperature (a) and supply under 1.5V supply voltage and DC sweeping from 1V to 1.8V
voltage (b) under room temperature(20℃) has been targeted to Winbond
0.5
μm 1.5V CMOS process, the VTP and VTN are -0.58V
and 0.61V separately in which process. Fig.4(a) and Fig.4(b)

1400

Authorized licensed use limited to: Huazhong University of Science and Technology. Downloaded on November 25, 2009 at 00:45 from IEEE Xplore. Restrictions apply.
 shows the threshold voltage characteristics of both Schmitt
trigger respect to temperature and supply voltage, separately.
Fig.5(a) shows the X response to temperature in the
application of relaxation oscillator. The TC for both Schmitt
trigger is
1.92 − 1.57
CT ,traditional = = 0.0041 / °C
85
1.88 − 1.81
CT , proposed = = 0.00082 / °C
85
In the temperature from 0 to 85 ℃ , the Schmitt trigger
proposed in this paper has better temperature character than
traditional and the ratio is 1/5
Fig.5(b) shows the X response to supply voltage in
relaxation oscillator. When supply voltage higher than 1.4V,
the supply voltage has little influence on oscillator; but lower
than 1.2V, the performance is reduced. The reason is the sum
of VTP and VTN is 1.19V, so the inverters are working in
weak inversion when supply voltage is lower than 1.2V.
[8] Kobchai Dejhan, Paiboon Tooprakai, Teera Rerkmaneewan et al. “A
high-speed direct nootstrapped CMOS Schmitt trigger circuit”. IEEE
International Conference on Semiconductor Electronics, 2004, Kuala
Lumpur, pp 68-71
[9] Zhenhua Wang. “CMOS adjustable Schmitt triggers”. IEEE
Transaction on Instrument and Measurement, 1991, 40(3) , pp 601-605
[10] Cong-Kha Pham. “CMOS Schmitt trigger circuit with controllable
hysteresis using logical threshold voltage control circuit”. 6th
IEEE/ACIS International Conference on Computer and Information
Science, 2007, Melbourne, Australia, pp 48-53
[11] Melbourne.V.A. Pedroni, “Low-voltage high-speed Schmitt trigger and
compact window comparator”. Electronics Letters, 2005, 41 (22), pp
1213-1214
[12] Daejeong Kim, Joongsik Kih, and Wonchan Kim. “A new waveform-
reshaping circuit: an alternative approach to Schmitt trigger”. IEEE
Journal of Solid-state Circuits. 1993,28(2) , pp 162-164
[13] Filanovsky IM, Baltes H. “CMOS Schmitt trigger design. ” IEEE
transactions on circuits and system: fundamental theory and
applications, 1994, 41 (1), pp 46-49.

V. CONCLUSION
A novel Schmitt trigger circuit, implemented by a RS
trigger and two simple distinct inverters, is proposed in this
paper. Detail calculation and analysis of the threshold
voltageof the proposed Schmitt trigger are presented. Results
show that the proposed one has better temperature
performance than the traditional 6-transistors Schmitt trigger.
In the application of relaxation oscillator, simulation results
show that the TC of proposed one is 1/5 of the traditional.
When supply voltage is higher than 1.4V, the proposed one is
independent of supply voltage. When lower than 1.2V, the
proposed one is sensitive to supply voltage than traditional
one.

REFERENCES
[1] Shih-Lun Chen, and Ming-Dou Ker. “A new Schmitt trigger circuit in a
0.13-μm 1/2.5-V CMOS process to receive 3.3-V input signals.” IEEE
Transactions on Circuits and Systems—II: EXPRESS BRIEFS, 2005,
52(7), pp. 361
[2] Shih-Lun Chen, and Ming-Dou Ker. “A new Rabaey Jan M. Digital
Integrated Circuits: a design perspective.” USA: Prentice-Hall
International, Inc. 1996, pp 111-112
[3] Gierkink S L J , van Tuijl E (A J M) . “A coupled saw_tooth oscillator
combining low jitter with high control linearity.” IEEE J Sol Sta Circ,
2002, 37 (6) , pp 702-709
[4] Luís Bica Oliveira, A. Allam, I. M. Filanovsky. “On phase noise in
quadrature cross-coupled oscillators.”IEEE International Symposium
on Circuits and Systems”. Kobe, Japan.2005, 3(23-26),pp 2635 - 2638
[5] Atul Wokhlu, Krishra R V, Agarwal S. “A low voltage mixed signal
ASIC for digital clinical thermometer. ”Proc the IEEE Int Conf VLSI
Design. Los Alamitos，CA. 1998, pp 412-417.
[6] Zhang C, Srivastava A, Ajmera P K. “Low voltage CMOS Schmitt
trigger circuits. ”Electronics Letters, ”2003, 39(24) , pp 1696-1697
[7] S.F. Al-Sarawi. “Low power Schmitt trigger circuit”. Electronics
Letters, 2002, 38(18) , pp 1009-1010

1401

Authorized licensed
View publication use limited to: Huazhong University of Science and Technology. Downloaded on November 25, 2009 at 00:45 from IEEE Xplore. Restrictions apply.
stats