Mark

Lundstrom Purdue University

SOLUTIONS: ECE 656 Homework 2 (Week 2)

Mark Lundstrom
Purdue University

1) Assume T = 0K and work out the electron density per unit area for two cases:

i) A 2D semiconductor with parabolic energy bands and an effective mass of m*.
(Assume a valley degeneracy of 2.)

ii) Graphene, where we consider E > 0 to be the conduction band. (E = 0 is where the
bands cross, the so-called Dirac point.) (Assume a valley degeneracy of 2.)

1a) Express your two answers in terms of the Fermi energy, and show that they are
different.

1b) Express your two answers in terms of the Fermi wavevector and show that they are
the same.

Solution:

1a) In terms of energy:
Case i): parabolic energy bands: DOS:
m* 2m*
D2 D ( E ) = gV = ( E > EC = 0)
π 2 π 2
∞ EF

nS = ∫ D2 D ( E ) f0 ( E ) dE = nS = ∫ D ( E )(1) dE
2D
(T = 0 K)
EC EC
EF
m* m*
nS = ∫ gV
π !2
dE = 2 ( E − EC )
π !2 F
EC

m* 2m*
nS = gV ( E − EC ) = π !2 ( EF − EC )
π !2 F

Case ii): graphene: DOS:

E 2E
D2 D ( E ) = gV = 2 2 ( E > 0) (valley degeneracy is 2 for graphene)
π  υF π  υF
2 2

Aside: Note that if we define the effective mass of graphene by E ≡ m*υ F2 then
we could use the parabolic band DOS and get the right DOS for graphene!
∞ EF

nS = ∫ D2 D ( E ) f0 ( E ) dE = nS = ∫ D ( E )(1) dE
2D
(T = 0 K)
0 0
ECE 656 Homework 2: (Week 2) (continued)

ECE-656 1 Fall 2017

Mark Lundstrom Purdue University

EF
2E E F2
nS = ∫
0 π  2υ F2
dE =
π  2υ F2

E F2
nS = 2 2
π  υF

1b) In terms of the Fermi wave vector, kF :

Case i): parabolic energy bands: DOS:
!2k 2
= E − EC ( E > EC )
2m*

! 2 k F2
= E F − EC = E F ( E > EC )
2m*
2 2
2m* 2m* ! k F k F2
nS = ( E − EC ) → nS = π !2 × 2m* = gV × 2π
π !2 F
k F2 k F2
nS = gV =
2π π

Case ii): graphene: DOS:

E = υ F k ( E > 0 )
E F = υ F k F ( E > 0)
F

( υ k )
2
E2 k F2
nS = 2F 2 → F F
=
π  υF π υ 2 2
F
π
k F2
nS = (same as for parabolic energy bands)
π

Aside: Why are the two expressions the same?
At T = 0 K, all of the states with k < k F are occupied and all for k > k F are empty.
The area of occupied k-space is π k F2
In 2D, each state occupies an area in k-space of ( 2π )
2
A
So the number of states occupied is:

ECE-656 2 Fall 2017

Mark Lundstrom Purdue University

ECE 656 Homework 2: (Week 2) (continued)

π k F2
N= × 2 × gV
( 2π ) A
2

where the factor of 2 is for spin degeneracy and gV is the valley degeneracy. The sheet
carrier density is
N k F2 k F2
nS = = × gV = (because valley degeneracy is 2 for both cases consider here.)
A 2π π

Working in k-space, we get the same answer for the two different band structures,
because the DOS in k-space does not depend on band structure.


2) Assume a finite temperature and work out the sheet carrier densities, nS , for:

2a) Electrons in the conduction band of a 2D parabolic band semiconductor

2b) Electrons in the conduction band (E > 0) of graphene.

Your answers to these questions should be in terms of material parameters and the Fermi
level.

Solution:

2a) parabolic energy bands
∞ ∞
⎛ m* ⎞ 1
nS = ∫ D2 D ( E ) f0 ( E ) dE = ∫ ⎜ gV 2⎟ ( E− E F ) k B T
dE
EC EC ⎝ π  ⎠ 1+ e

⎛ m* ⎞
∞
1 ⎛ m* ⎞
∞
1
2⎟ ∫ 2⎟ ∫
nS = ⎜ gV ( E− E F ) k B T
dE = ⎜ gV ( E− EC + EC − E F ) k B T
dE
⎝ π  ⎠ EC 1+ e ⎝ π  ⎠ EC 1+ e


define:
E − EC E − EC dE
ηF = F η= dη = dE = k BTdη
k BT k BT k BT
with this change of variables, we find:

⎛ m* ⎞ k BTdη
∞

2 ∫
nS = ⎜ gV
⎝ π  ⎟⎠ 0 1+ e F
η −η

the integral can be done analytically:

ECE-656 3 Fall 2017

Mark Lundstrom Purdue University

ECE 656 Homework 2: (Week 2) (continued)

∞

∫ 1+ e
dη
η −η F (
= ln 1+ eηF )
0

but we also recognize it as a Fermi-Dirac integral of order 0:

(
F 0 (η F ) = ln 1+ eηF )

so the answer is:

nS = N 2 DF 0 (η F )
m*k BT
N2D = gv
π 2

2b) graphene

∞ ∞
⎛ 2E ⎞ 1
nS = ∫E 2 D ( ) 0 ( )
D E f E dE = ∫0 ⎜⎝ π  2υ 2 ⎟⎠ 1+ e( E− EF ) kB T
dE
C F

define:

EF E dE
ηF = η= E = k BT η dη = dE = k BTdη
k BT k BT k BT

2
⎛ 2 ⎞∞ E ⎛ 2 ⎞ ∞ k BT η 2⎛ k T⎞
∞
η dη
nS = ⎜ 2 2 ⎟ ∫ ( E− E F ) k B T
dE = ⎜ 2 2 ⎟ ∫ k Tdη = ⎜ B ⎟ ∫ 1+ e
⎝ π  υ F ⎠ 0 1+ e ⎝ π  υ F ⎠ 0 1+ e
η −η F B
π ⎝ υ F ⎠ 0
η −η F

The integral is recognized as a Fermi-Dirac integral of order 1:

2 2
2⎛ k T⎞ 2⎛ k T⎞
∞
η dη
nS = ⎜ B ⎟
π ⎝ υ F ⎠ ∫0 1+ eη−ηF = π ⎜⎝ υB ⎟⎠ F 1 (η F )
F

nS = N 2 DF 1 (η F )
2
2 ⎛ k BT ⎞
N2D = ⎜
π ⎝ υ F ⎟⎠

ECE-656 4 Fall 2017

Mark Lundstrom Purdue University

ECE 656 Homework 2: (Week 2) (continued)

3) Assume T = 0K and work out the average +x-directed velocity for electrons in:

3a) A 2D semiconductor with a parabolic conduction band and

3b) The conduction band (E > 0) of graphene.

Your answer should be in terms of the Fermi energy, E F .

Solution:

3a) parabolic energy bands

 ∞ + π /2

∑ x 0
k x >0,k y
υ k f()
( E ) ∫0 −π∫/2 k dk dθ υ x f0 num
υx =
+
= ∞ + π /2 = (DOS in k-space cancels from num
∑ f0 ( E ) den
k x >0,k y ∫ ∫ k dk dθ f0
0 − π /2

and denom)

∞ + π /2 ∞ + π /2
k
num = ∫ ∫ k dk dθ υ x f0 = ∫ ∫ k dk dθ cosθ f0
0 − π /2 0 − π /2 m*

f0 = 1 k < k F ( E < E F )

 ⎛ k F3 ⎞
k F + π /2 kF + π /2
k 
num = ∫ ∫ k dk dθ * cosθ = * ∫ k dk
2
∫ cosθ dθ = ×2
0 − π /2 m m 0 − π /2 m* ⎜⎝ 3 ⎟⎠

⎛ 2 ⎞ ⎛ k F3 ⎞
num = ⎜ ⎟ ⎜ * ⎟ (*)
⎝ 3⎠ ⎝ m ⎠

∞ + π /2 k F + π /2 kF + π /2
k F2
denom = ∫ ∫ k dk dθ f0 = ∫ ∫ k dk dθ = ∫ k dk ∫ dθ = × π (**)
0 − π /2 0 − π /2 0 − π /2
2

Using (*) and (**)

⎛ 2 ⎞ ⎛ k F3 ⎞
⎜⎝ 3 ⎟⎠ ⎜ m* ⎟
num ⎝ ⎠ 4 k F 4
υ x+ = = = = υF
denom π kF 2
2
3π m *
3π

ECE-656 5 Fall 2017

Mark Lundstrom Purdue University

ECE 656 Homework 2: (Week 2) (continued)

4
υ x+ = υ
3π F
Makes sense….. ave. x-directed velocity must be less than the maximum
velocity of electrons in the conduction band, υ F .

3b) graphene

 ∞ + π /2

k x >0,k y
υ k f()
∑ x 0 ( ) ∫ ∫ k dk dθ υ x f0
E
num
υx =
+
= 0 ∞− π+/2π /2 =
∑ f0 ( E ) den
k x >0,k y ∫ ∫ k dk dθ f0 0 − π /2

∞ + π /2 ∞ + π /2

num = ∫ ∫ k dk dθ υ x f0 = ∫ ∫ k dk dθ υ F cosθ f0
0 − π /2 0 − π /2

f0 = 1 k < k F ( E < E F )

k F + π /2
⎛ k F2 ⎞
kF + π /2

num = ∫ ∫ k dk dθ υ F cosθ =υ F ∫ k dk ∫ cosθ dθ = υ F ⎜ ⎟ × 2

0 − π /2 0 − π /2 ⎝ 2⎠

num = υ F k F2 (*)

∞ + π /2 k F + π /2 kF + π /2
k F2
den = ∫ ∫ k dk dθ f0 = ∫ ∫ k dk dθ = ∫ k dk ∫ dθ = ×π (**)
0 − π /2 0 − π /2 0 − π /2
2


From (*) and (**), we find:

num υ F k F
2
2
υx =
+
= 2 = υF
den k F π 2 π

2
υ x+ = υ
π F

ECE-656 6 Fall 2017

Mark Lundstrom Purdue University

ECE 656 Homework 2: (Week 2) (continued)

4) Assume a nonparabolic, 1D energy bandstructure described by:

 2 kx2
E ( kx ) ⎡⎣1 + α E ( kx ) ⎤⎦ =
2m* ( 0 ) .
where

1 d E ( kx )
2
1
=
m* ( 0 )  2 dkx2 k =0
x
.


4a) Sketch (or produce a Matlab plot) of E(k) vs. k for two cases: i) α = 0 and ii) α > 0 . If you
are producing a Matlab plot, the energy range should be from 0 to 1 eV, and you can
assume α = 0.5 eV.

Solution:

We can see from the equation, that for a given E, the left hand side will be bigger than
for a parabolic energy band, so it will take a bigger kx for that E. The bands flatten out
as shown below.

4b) For this bandstructure, derive an expression for the velocity, υ x ( kx ) as a function of
kx .

Solution:
Velocity is related to bandstructure by:
1 dE
υx =
 dk x

ECE-656 7 Fall 2017

Mark Lundstrom Purdue University

ECE 656 Homework 2 (Week 2) (continued)

 2 kx2
E +αE = 2

2m* ( 0 )

dE dE  2 kx
+ 2α E =
dk x dk x m* ( 0 )

dE 2 k
(1+ 2α E ) = * x
dk x m (0)

1 dE 1  2 kx 1
= = υx
 dk x  m ( 0 ) (1+ 2α E )
*

kx 1
υx =
m ( 0 ) (1+ 2α E )
*

alternatively, we could define an energy dependent effective mass by:

m* ( E ) = m* ( 0 ) (1+ 2α E )

and write the velocity as
k
υx = * x
m (E)


5) For parabolic energy bands, the 2D density of states is

m*
D2 D ( E ) = g v Θ ( E − ε1 ) .
π !2

Assume a non-parabolic band described by the so-called Kane dispersion,

2k 2
() ()
E k ⎡⎣1 + α E k ⎤⎦ =
2m* 0 ( ) ,
and derive the density of states.

ECE-656 8 Fall 2017

Mark Lundstrom Purdue University

ECE 656 Homework 2 (Week 2) (continued)

Solution:
First, find the number of states in 2D k-space:
⎛ A ⎞ A A
N ( k ) dk x dk y = ⎜ × 2 ⎟ 2π kdk = 2π kdk = kdk
⎜⎝ ( 2π ) 2
⎟⎠ 2π 2
π

Note that N ( k ) dk x dk y is the number of states per unit area. Now map these states
onto energy:
1 1
D2 D ( E ) dE = g v N ( k ) dk = kdk
A π

Note that by convention, D2 D ( E ) dE is the number of states per unit area. Solve for
D2 D ( E ) :

1 dk 1 dk
D2 D ( E ) = g v N (k ) = gv k (*)
A dE π dE

The bandstructure is:
2k 2
E + α E2 =
2m* ( 0 )

Differentiate with respect to k:

(
d E + α E2
=
dE )(1+ 2α E )
dk dk

from which we find
2 dk
1+ 2α E = * k
m ( 0 ) dE

dk m ( 0 )
*

k
dE
=
2
(1+ 2α E ) (**)

Now insert (**) into (*) to find:

m* ( 0 )
D2 D ( E ) = g v(1+ 2α E )
π !2
So the 2D DOS increases linearly with energy when we take conduction band non-
parabolicity into account.

ECE-656 9 Fall 2017

Mark Lundstrom Purdue University

ECE 656 Homework 2 (Week 2) (continued)

6) Derive an expression for the 2D density of states for one of the conduction band ellipsoids
in silicon.

ky


*
mDOS =?


kx






HINT: You may find he discussion in Pierret (Advanced Semiconductor Fundamentals)
on pp. 94-95 helpful.


Solution:

( )
In this case, we write E k x ,k y as:

2 2
 2 k x2  k y
E= +
2mxx* 2m*yy

For the case shown, mxx* is the longitudinal effective mass and m*yy is the transverse
effective mass.

⎡ 2 2
⎤
 2 ⎢⎛ m0 ⎞ ⎛ m0 ⎞ ⎥
2 2
 2 k x2  k y
Re-write E = + as E = ⎜ k ⎟ +⎜ k ⎟
2mxx* 2m*yy 2m0 ⎢⎝ mxx* x ⎠ ⎜⎝ m*yy y ⎟⎠ ⎥
⎢⎣ ⎥⎦

Now define a “stretched” k-space:

m0 m0
kx = k ky = k
mxx* x m*yy y

ECE-656 10 Fall 2017

Mark Lundstrom Purdue University

ECE 656 Homework 2 (Week 2) (continued)

Now we can write the E(k) in the stretched k-space:

 2 k 2
 ( 
E kx , k y = )2  2  2
k + ky =
2m0* x
( 2m0*
, ) (*)

which looks like a simple, circular band in 2D. But we must realize that states are
spaced ( 2π L ) in k , but they are spaced ( 2π L ) × m m in k . Accordingly, we
x x x 0 xx x

find

A mxx myy A mxx myy mxx myy
N ( k ) dk x dk y = ×2× dkx dky =  k = A
2π kd  k
kd
( 2π ) 2π 2 π
2
m0 m0 m0

1 1 mxx myy
D2 D ( E ) dE = N ( k ) dk x dk y = k dk
A π m0

or, solving for the DOS:
1 mxx myy dk
D2 D ( E ) = k (**)
π m0 dE

Now use (*) to find:

dk m0
k =
dE  2

and insert this in (**) to find

m mxx myy mxx myy
D2 D ( E ) = gV 02 = gV
π m0 π 2

For the primed valleys of Si, mxx* = m* is the longitudinal effective mass and m*yy = mt* is
the transverse effective mass. The valley degeneracy of the primed valleys is g v = 4 .
Accordingly, for the primed valleys (of (100) Si), we find

mxx myy m*mt*
D2′ D ( E ) = gV =4 ,
π 2 π 2

ECE-656 11 Fall 2017

Mark Lundstrom Purdue University

ECE 656 Homework 2 (Week 2) (continued)

which can be written as

m*D
D2′ D ( E ) = 2
π
m*D = 4 m*mt*

The quantity, m*D is called the “density-of-states effective mass” (note that it includes the
valley degeneracy the way we have defined it).


7) Assume an ultra thin body (100) silicon structure with a thickness of 3 nm. Assume no
bandbending within the structure and infinitely high energy barriers at the oxide-silicon
interfaces. Compute and plot the 2D density of states vs. energy.


Solution:

The constant energy surfaces for Si are shown below. The “confinement mass” is the
mass in the direction of confinement (assume z-direction) and the DOS effective masses
are determined by the masses in the x-y plane.

Unprimed valleys:

 2 n 2π 2 mt*
εn = D2 D = gv 2 gv = 2
2m2t Si2 π

Primed valleys:

 2 m 2π 2 mt*m*
ε n′ = D2′ D = gv′ gv = 4
2mt2t Si2 π 2

See the figures below:

ECE-656 12 Fall 2017

Mark Lundstrom Purdue University

ECE 656 Homework 2 (Week 2) (continued)

specific numbers: unprimed valleys:

 2 n 2π 2 ( 0.042 ) 2
εn = = * n (eV)
2m2t Si2 m m0

ε1 = 0.046 ε 2 = 0.185 ε 3 = 0.415 ε 4 = 0.739

mt* m
D2 D = gv 2 = 0.38 02
π π
m0
= 4.2 × 1014 (eV-cm2)-1
π 2

specific numbers primed valleys:

 2 m 2π 2 ( 0.042 ) 2
ε m′ = = * m (eV)
2mt2t Si2 mt m0

ε1′ = 0.221 ε 2′ = 0.884 ε 3′ = 1.989 ε 4′ = 3.54

Note that these are unreasonably large energies (especially for m > 1) – due to
the assumption of infinite barriers and parabolic energy bands.

mt*m* m
D2 D = gv = 1.66 02
π 2
π

ECE-656 13 Fall 2017

Mark Lundstrom Purdue University

ECE 656 Homework 2 (Week 2) (continued)

With this information, we can plot the DOS for the first few levels….

ECE-656 14 Fall 2017