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1장
1장
1장
Prob. 1.1
Which semiconductor in Table 1-1 has the largest Eg? the smallest? What is the
corresponding λ? How is the column III component related to Eg?
1.24
λ= = 0.344µm
3.6
1.24
λ= = 6.89µm
0.18
. We or
m W ina g
b)
ed e n
Al compounds Eg > corresponding Ga compounds Eg > the corresponding In
in
no W iss ea s
itt id tio
is e D t w
t p or em ch
compounds Eg d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p
er ld
e lu nt ns co
th inc de f i es
Prob. 1.2
of rk ( stu e o tat
ity o g us d S
te is ss th ite
in f th se for Un
For a bcc lattice of identical atoms with a lattice constant of 5 Å, calculate the maximum
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
packing fraction and the radius of the atoms treated as hard spheres with the nearest
de f a rse de ot
s
ill o u vi pr
w le co ro is
sa eir is p rk
neighbors touching.
th d wo
an his
e
T
Each corner atom in a cubic unit cell is shared with seven neighboring cells; thus, each
unit cell contains one-eighth of a sphere at each of the eight corners for a total of one
atom. The bcc cell contains one atom in the center of the cube. Thus, we have
1
Nearest atoms are at a separation × 52 + 52 + 52 = 4.330 Å
2
1
Radius of each atom = × 4.330 Å = 2.165 Å
2
4 3
Volume of each atom = π ( 2.165) = 42.5 Å3
3
T
an his
Packing fraction =
th d wo
sa eir is p rk
w le co ro is
ill o u vi pr
de f a rse de ot
(5)3
st ny s d s ec
42.5 × 2
ro p an o te
y ar d le d
th t o a ly by
e s
in f th se for Un
te is ss th ite
gr w in e
ity o g us d S
= 68%.
of rk ( stu e o tat
8
1
th inc de f i es
e lu nt ns co
w d le tr p
Number of atoms per cube = 1 + 8 × = 2
or in a uc y
k g rn to rig
an on in rs h
d th g. in t la
is e D t w
no W iss ea s
t p or em ch
er ld in
m W ina g
itt id tio
ed e n
. We or
b)
is a relatively high percentage compared with some other lattice structures.
Therefore, if the atoms in a bcc lattice are packed as densely as possible, with no
distance between the outer edges of nearest neighbors, 68% of the volume is filled. This
Prob. 1.3
Label planes.
(6 4 3) (2 1 2)
x x
_x y z_ _x y z_
2 3 4 2 4 2
1/2 1/3 1/4 1/2 1/4 1/2
6 4 3 2 1 2
Prob.1.4
. We or
m W ina g
b)
ed e n
in
no W iss ea s
Sketch a body centered cubic unit cell with a monoatomic basis. If the atomic density is 1.6x1022
itt id tio
is e D t w
t p or em ch
d th g. in t la
cm-3, calculate the lattice constant. What is the atomic density per unit area on the (110) plane?
an on in rs h
k g rn to rig
or in a uc y
What is the radius of each atom? What are interstitials and vacancies?
w d le tr p
er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat
ity o g us d S
1
te is ss th ite
8
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
2
de f a rse de ot
=1.6×1022cm-3
s
ill o u vi pr
3
a
w le co ro is
sa eir is p rk
th d wo
an his
1
e
⎛ 1 ⎞ 3
T
a = ⎜ ⎟ ×10−7 cm = 5≈
⎝ 8 ⎠
( )
Area of (110) plane = a 2 a = 2 ( 25 ) ≈ 2
1 2
# of atoms = 1+4× = 2 ⇒ Density = Å −2
4 2 ( 25)
0.707×2×1016
= #/cm2 =5.6×1014 cm-2
25
3a
Nearest neighbor atoms along body diagonal =
2
3
Radius = a = 2.17Å
4
Vacancies are missing atoms. Interstitials are extra atoms in between atoms (voids).
Prob. 1.5
Calculate densities of Si and GaAs.
The atomic weights of Si, Ga, and As are 28.1, 69.7, and 74.9, respectively.
8 atoms 8
3
= 3
= 5 ⋅1022 cm1 3
a (
5.43 ⋅10-8cm )
g
5 ⋅1022 1
cm3
⋅ 28.1 mol
density = 23
= 2.33 cmg 3
6.02 ⋅10 1
mol
. We or
m W ina g
b)
ed e n
in
no W iss ea s
GaAs: a = 5.65 ⋅10-8 cm, 4 each Ga, As atoms/cell
itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p
er ld
4 4
e lu nt ns co
3 3
a
of rk ( stu e o tat
( -8
5.65 ⋅10 cm )
ity o g us d S
te is ss th ite
in f th se for Un
gr w in e
th t o a ly by
g
2.22 ⋅1022 1
⋅ ( 69.7 + 74.9 ) mol
y ar d le d
ro p an o te
cm3
density = = 5.33 cmg 3
st ny s d s ec
23
de f a rse de ot
6.02 ⋅10 1
s
ill o u vi pr
mol
w le co ro is
sa eir is p rk
th d wo
Prob. 1.6
an his
e
T
For InSb, find lattice constant, primitive cell volume, (110) atomic density.
3a
= 1.44≈ + 1.36≈ = 2.8≈
4
a = 6.47Å
a3
FCC unit cell has 4 lattice points ∴volume of primitive cell = = 67.7≈ 3
4
area of (110) plane = 2a 2
4 ⋅ 14 +2 ⋅ 12 2
density of In atoms = 2
= 2
= 3.37 ⋅1014 1
cm2
2a a
1 1
Number of atoms = 4 × + 2 × = 2
4 2
2
Areal density = atoms/Å 2
25 2
(1Å = 10 -8
cm )
= 0.057×1016 atoms/cm 2
. We or
= 5.7×1014 atoms/cm 2
m W ina g
b)
ed e n
in
no W iss ea s
itt id tio
is e D t w
t p or em ch
Volume of unit cells = a 3 = (125) Å3 = 1.25×10-22 cm3 d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p
er ld
e lu nt ns co
1 1
Number of atoms/unit cell = 8× + 6× = 4
th inc de f i es
of rk ( stu e o tat
8 2
ity o g us d S
te is ss th ite
4
in f th se for Un
1.25×10-22
y ar d le d
ro p an o te
st ny s d s ec
= 3.2×1022 atoms/cm3
de f a rse de ot
s
ill o u vi pr
w le co ro is
Prob. 1.8
T
view direction
Prob. 1.10
. We or
(a) Find number of Si atoms/cm2 on (100) surface.
m W ina g
b)
ed e n
in
no W iss ea s
itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
er ld
e lu nt ns co
th inc de f i es
a=5.43Ǻ
te is ss th ite
2
in f th se for Un
2 cm2
(5.43Å )
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot
s
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo
e
T
g
4.86 ⋅10-23 cell
density = -8 3 1
= 2.2 cmg 3
(2.8 ⋅10 cm) cell
The hard sphere approximation is comparable with the measured 2.17 cmg 3 density.
Prob. 1.12
. We or
m W ina g
b)
ed e n
in
no W iss ea s
Find packing fraction, B atoms per unit volume, and A atoms per unit area.
itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
A B A Note: The atoms are the same size and touch each
w d le tr p
er ld
e lu nt ns co
4Å
th inc de f i es
A B A
te is ss th ite
A B A
gr w in e
th t o a ly by
4Å
y ar d le d
ro p an o te
A B A
de f a rse de ot
s
ill o u vi pr
w le co ro is
sa eir is p rk
4Å
an his
e
T
Å38π
3 π
packing fraction = 3
= = 0.13 = 13%
64Å 24
1 atom
B atoms volume density = = 1.56 ⋅1022 1
cm3
64Å3
1 atom
A atoms (100) aerial density = 2
= 6.25 ⋅1014 1
cm2
(4Å)
Prob. 1.13
Find atoms/cell and nearest neighbor distance for sc, bcc, and fcc lattices.
sc
sc: atoms/cell = 8 ⋅ 18 = 1 lattice
a
2
nearest neighbor distance = a
. We or
fcc: atoms/cell = 8 ⋅ 18 + 6 ⋅ 12 = 4
m W ina g
fcc
b)
ed e n
in
no W iss ea s
itt id tio
is e D t w
t p or em ch
lattice
d th g. in t la a
an on in rs h
k g rn to rig
a 2 √2
or in a uc y
a⋅ 2
w d le tr p
er ld
e lu nt ns co
2
of rk ( stu e o tat
a
ity o g us d S
te is ss th ite
2
in f th se for Un
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot
s
ill o u vi pr
Prob. 1.14
w le co ro is
sa eir is p rk
th d wo
Draw cubes showing four {111} planes and four {110} planes.
an his
e
T
{111} planes
{110} planes
Prob. 1.15
Find fraction occupied for sc, bcc, and diamond lattices.
sc: atoms/cell = 8 ⋅ 18 = 1
sc
a lattice
nearest neighbor = a à radius = a
2
3
4π ⎛ a ⎞ π ⋅ a3
atom sphere volume = ⋅ ⎜ ⎟ =
3 ⎝ 2 ⎠ 6
. We or
m W ina g
b)
ed e n
in
no W iss ea s
itt id tio
is e D t w
t p or em ch
a⋅ 3 a⋅ 3 d th g. in t la
an on in rs h
nearest neighbor = à radius =
k g rn to rig
or in a uc y
2 4
w d le tr p
er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat
3
4π ⎛ a ⋅ 3 ⎞ π ⋅ 3 ⋅ a3
ity o g us d S
⋅ ⎜⎜ ⎟
3 ⎝ 4 ⎟⎠ a
in f th se for Un
16
gr w in e
2 √3
th t o a ly by
y ar d le d
a
ro p an o te
st ny s d s ec
2
s
ill o u vi pr
w le co ro is
π ⋅ 3 ⋅ a3
sa eir is p rk
a
th d wo
2⋅
π⋅ 3 2 √2
an his
3
a 8
diamond: atoms/cell = 4 (fcc) + 4 (offset fcc) = 8 diamond
lattice
a⋅ 3 a⋅ 3 a/2
nearest neighbour = à atom radius =
4 8
3
4π ⎛ a ⋅ 3 ⎞ π ⋅ 3 ⋅ a3
atom sphere volume = ⋅ ⎜⎜ ⎟ =
3 ⎝ 8 ⎟⎠ 128
a
unit cell volume = a 3 4 √3
a
π⋅ 3 ⋅a 3
4
8⋅
128 π⋅ 3 a
fraction occupied = = = 0.34
a 3
16 4 √2
Prob. 1.16
Calculate densities of Ge and InP.
The atomic weights of Ge, In, and P are 72.6, 114.8, and 31, respectively.
8 atoms 8
3
= 3
= 4.41⋅1022 cm1 3
a 5.66 ⋅10-8cm
( )
g
4.41⋅1022 1
cm3
⋅ 72.6 mol
density = = 5.32 cmg 3
6.02 ⋅1023 1
mol
4 4
. We or
m W ina g
= =1.98 ⋅1022 1
b)
ed e n
in
no W iss ea s
itt id tio
is e D t w
t p or em ch
3 3 cm3
a (5.87 ⋅10-8cm ) d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p
er ld
e lu nt ns co
th inc de f i es
g
1.98 ⋅1022 1
⋅ (114.8+31) mol
of rk ( stu e o tat
cm3
density = = 4.79 cmg 3
ity o g us d S
23
6.02 ⋅10 1
te is ss th ite
in f th se for Un
mol
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
Prob. 1.17
de f a rse de ot
s
ill o u vi pr
w le co ro is
Sketch diamond lattice showing four atoms of interpenetrating fcc in unit cell..
sa eir is p rk
th d wo
an his
e
T
. We or
m W ina g
b)
ed e n
in
no W iss ea s
itt id tio
is e D t w
t p or em ch
Prob. 1.19 d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p
er ld
e lu nt ns co
A Si crystal is to be grown by the Czochralski method, and it is desired that the ingot
th inc de f i es
of rk ( stu e o tat
ity o g us d S
(a) What concentration of phosphorus atoms should the melt contain to give this
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot
s
ill o u vi pr
impurity concentration in the crystal during the initial growth? For P in Si, kd =
w le co ro is
sa eir is p rk
th d wo
an his
0.35.
T
(b) If the initial load of Si in the crucible is 5 kg, how many grams of phosphorus
SOLUTION
(a) Assume that CS = kdCL throughout the growth. Thus the initial concentration of P
1016
= 2.86 × 1016 cm −3
0.35
(b) The P concentration is so small that the volume of melt can be calculated from the
weight of Si. From Appendix III the density of Si is 2.33 g/cm3. In this example
we will neglect the difference in density between solid and molten Si.
5000 g of Si
3
= 2146 cm3 of Si
2.33 g/cm
Since the P concentration in the growing crystal is only about one-third of that in the
melt, Si is used up more rapidly than P in the growth. Thus the melt becomes richer in P
. We or
as the growth proceeds, and the crystal is doped more heavily in the latter stages of
m W ina g
b)
ed e n
in
no W iss ea s
itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
growth. This assumes that kd is not varied; a more uniformly doped ingot can be grown
or in a uc y
w d le tr p
er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat
by varying the pull rate (and therefore kd) appropriately. Modern Czochralski growth
ity o g us d S
te is ss th ite
in f th se for Un
systems use computer controls to vary the temperature, pull rate, and other parameters to
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot
e
T