Power Semiconductor Devices

SCRs
Operating Modes of SCR:

An SCR can operate primarily in 3 modes.

Forward Blocking Mode:

When anode is positive with respect to the cathode keeping gate floating (unconnected), the device cannot conduct. In
this mode a very small leakage current keeps flowing through device.

Forward Conduction Mode:

When anode is positive with respect to the cathode and a positive pulse is applied between gate and cathode, the SCR
starts conduction. This is a normal mode of operation for SCRs. Another way to set this mode is to increase anode to
cathode voltage beyond device’s breakover voltage, keeping gate floating.

Reverse Blocking Mode:

When anode voltage is lower than the cathode voltage during gate pulse is applied, the device remains off and is said to
be in reverse blocking mode. Under this mode, device may damage if reverse voltage is higher than reverse breakdown
voltage.
SCR Applications and I-V Characteristics
1. Semi-controlled and fully-controlled single phase and poly-phase rectifiers
2. DC motor drives
3. Battery chargers
DIAC:
❑It is a 2-terminal device that can conduct in both
directions.

❑Diac has breakdown voltages in both direction and can be

used in AC power transfer in PE circuits.

❑Due to its capability to conduct in both directions (AC

current) and having 2-terminals, the device is named
‘di+ac = DIAC’.
DIAC Characteristics and Circuit Symbol:
 TRIAC:
❑A triac is 3-terminal (MT1, MT2 and gate) device that can conduct in both
directions by controlling the gate terminal.
❑Triac is used in AC power control and has three terminals, hence named
‘Tri+ac = triac’.
❑A triac is essentially a pair of SCRs with common gate.
TRIAC (Contd.):
❑Device starts conduction when gate pulse is applied.

❑When AC voltage reverses the polarity, device turns off

automatically.

❑It needs another gate pulse for next half cycle

conduction.
Other subclasses of SCRs and triacs:
1.Light activated SCRs/triacs
Used in optically coupled or electrically isolated PE
circuits

2.Gate sensitive SCRs/triacs

Used in embedded power controller circuits
 Gate Turn OFF (GTO) Thyristors:
❑GTOs are 3-terminal (anode, cathode, gate) thyristors.

❑Conventional SCRs have issues with commutation and need

sophisticated techniques to turn them off.

❑Sometimes, SCRs do not properly turn off even by applying -ve gate

pulse.

❑GTOs resolve this issue and guarantee the turn off by applying -ve gate

pulse to turn off and +ve gate pulse to tun on.

 Types of GTOs:
❑They are of 2 types:

symmetrical and asymmetrical

later being the most common devices.

❑GTOs require larger gate pulse that SCRs for turn on.
Applications of GTOs:
❑DC drives

❑DC sources integration

❑Heating, ventilation, airconditioing (HVAC) equipment

❑High-tension DC power transmission

❑Induction heating with pulsating DC

MOS Controlled Thyristors (MCTs):
❑MCTs, invented in 1984, overcome the disadvantage of GTOs of

higher gate current.

❑They are 3-terminal (anode, cathde and gate) devices and are

improved in terms of turn-on time and on-state resistance.

❑Therefore, they are considered the future power switches,

although they are in the process of refinement.

 MCTs (Contd.):
• All the gate voltages are applied with respect to anode terminal while
main current flows from the anode to the cathode.
 Turning On an MCT:
❑The device is turned on by a -ve voltage pulse at the gate with respect to
the anode.

❑So, MCT must be initially forward biased and then only a -ve voltage at
gate be applied.

❑With the application of this -ve voltage pulse, P-FET turns on whereas N-
FET is already off.

❑With P-FET on, current begins to flow from anode , through P-FET and
then as the base current and emitter of NPN and then to the cathode.
Turning Off an MCT:
❑ The device is turned off by applying a +ve voltage pulse at the
gate which causes the N-FET to turn on and P-FET to turn off.

❑ After N-FET turns on, emitter and base terminals of PNP

transistor are short circuited by N-FET.

❑ Therefore, anode current (main current) begins to flow

through N-FET and thus base current of PNP begins to
decrease.
Advantages of MCTs:
❑Much larger current handling than other power switches

❑Low forward conduction drop

❑Fast turn-on and turn-off times

❑Low switching losses

❑High gate input impedance

Static Induction Thyristor (SITh):
❑Invented in 1975 in Japan.

❑A power switch that has several advantages over conventional

thyristors in terms of power handling and reliability.

❑Like other many power switches, it has 3 terminals named

anode, cathode and gate.