DSS2x101-02A

Schottky Diode VRRM = 200 V

I FAV = 2x 100 A
VF = 0.84 V

High Performance Schottky Diode

Low Loss and Soft Recovery
Parallel legs
Part number

DSS2x101-02A

Backside: isolated

2 1

3 4

Features / Advantages: Applications: Package: SOT-227B (minibloc)

● Very low Vf ● Rectifiers in switch mode power ● Isolation Voltage: 3000 V~
● Extremely low switching losses supplies (SMPS) ● Industry standard outline
● Low Irm values ● Free wheeling diode in low voltage ● RoHS compliant
● Improved thermal behaviour converters ● Epoxy meets UL 94V-0
● High reliability circuit operation ● Base plate: Copper
● Low voltage peaks for reduced internally DCB isolated
protection circuits ● Advanced power cycling
● Low noise switching

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200210b

© 2020 IXYS all rights reserved

 DSS2x101-02A

Schottky Ratings
Symbol Definition Conditions min. typ. max. Unit
VRSM max. non-repetitive reverse blocking voltage TVJ = 25°C 200 V
VRRM max. repetitive reverse blocking voltage TVJ = 25°C 200 V
IR reverse current, drain current VR = 200 V TVJ = 25°C 4 mA
VR = 200 V TVJ = 125°C 10 mA
VF forward voltage drop I F = 100 A TVJ = 25°C 0.94 V
I F = 200 A 1.16 V
I F = 100 A TVJ = 125 °C 0.84 V
I F = 200 A 1.11 V
I FAV average forward current TC = 105 °C T VJ = 150 °C 100 A
rectangular d = 0.5
VF0 threshold voltage TVJ = 150 °C 0.54 V
for power loss calculation only
rF slope resistance 2.7 mΩ
R thJC thermal resistance junction to case 0.4 K/W
R thCH thermal resistance case to heatsink 0.1 K/W
Ptot total power dissipation TC = 25°C 310 W
I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C 1.40 kA
CJ junction capacitance VR = 24 V f = 1 MHz TVJ = 25°C 787 pF

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200210b

© 2020 IXYS all rights reserved

 DSS2x101-02A

Package SOT-227B (minibloc) Ratings

Symbol Definition Conditions min. typ. max. Unit
I RMS RMS current per terminal 150 A
TVJ virtual junction temperature -40 150 °C
T op operation temperature -40 125 °C
Tstg storage temperature -40 150 °C
Weight 30 g
MD mounting torque 1.1 1.5 Nm
MT terminal torque 1.1 1.5 Nm
d Spp/App terminal to terminal 10.5 3.2 mm
creepage distance on surface | striking distance through air
d Spb/Apb terminal to backside 8.6 6.8 mm
VISOL isolation voltage t = 1 second 3000 V
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute 2500 V

Product Marking
Part
Logo XXXXX
Number
yywwZ ® 123456
Date
Code
Location UL Lot#

Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No.
Standard DSS2x101-02A DSS2x101-02A Tube 10 500867

Equivalent Circuits for Simulation * on die level T VJ = 150°C

I V0 R0 Schottky

V 0 max threshold voltage 0.54 V

R0 max slope resistance * 0.8 mΩ

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200210b

© 2020 IXYS all rights reserved

 DSS2x101-02A

Outlines SOT-227B (minibloc)

2 1

3 4

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200210b

© 2020 IXYS all rights reserved

 DSS2x101-02A

Schottky
200 10 10000

100 TVJ = 150°C

1
125°C
CT
IR
IF TVJ = 25°C
100°C
0.1 1000
10 [mA]
[A] 75°C [pF]
TVJ =
150°C 0.01
125°C 50°C
25°C
25°C

1 0.001 100
0.2 0.4 0.6 0.8 1.0 1.2 0 50 100 150 200 0 50 100 150 200
VF [V] VR [V] VR [V]
Fig. 1 Max. forward voltage Fig. 2 Typ. reverse current Fig. 3 Typ. junction capacitance
drop characteristics IR vs. reverse voltage VR CT vs. reverse voltage VR

160 160

140

120 120

IF(AV) 100
DC d=
d = 0.5 P(AV)
80 80 DC
[A] 0.5
[W] 60 0.33
0.25
40 0.17
40
0.08
20

0 0
0 40 80 120 160 0 50 100 150
TC [°C] IF(AV) [A]
Fig. 4 Average forward current Fig. 5 Forward power loss
IF(AV) vs. case temperature TC characteristics

D=
0.5
ZthJC
0.33
0.25
0.1 0.17

[K/W] 0.08 Single Pulse

Note: All curves are per diode

0.01
0.001 0.01 0.1 1 10
t [s]
Fig. 6 Transient thermal impedance junction to case at various duty cycles

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200210b

© 2020 IXYS all rights reserved

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DSS2x101-02A