Professional Documents
Culture Documents
13-Lesson13-Bipolar Junction Transistor Fundamentals
13-Lesson13-Bipolar Junction Transistor Fundamentals
1
Schematic representation of pnp and npn BJTs
2
BJT circuit symbols
4
BJT biasing modes
5
Cross sections and simplified models of discrete and IC
npn BJTs
6
Electrostatic variables for a pnp BJT at equilibrium
1
V = - (EC - Eref )
q
1 dEC 1 dEi
E = =
q dx q dx
dE r r = charge density
= e = Ks eo
dx e
7
Qualitative discussions of operation
Consider two diodes, one forward biased and one reverse biased.
p+ n n p
E E
h e e h
e h h e
E E
e h
h reverse
forward e h e
8
Qualitative discussion of transistor action
p+ n p
I forward I reverse
No transistor action
9
Consider very thin base width: Transistor action
E(P+) B(N)
E C(P)
IE aI E
( 1 - a )I E
R
VF VR
–IEN 5 - 4
–IBE –IBR Electron
flux
IB
E B C Hole
flux
and current
IE = IEP + IEN = 1 + 2 + 5
IB = IBR + IBE = IBR + IEN = – (4 + 5)
IC = IEP – IBR = 2
11
Current components
12
Performance parameters (Consider pnp)
I C = a T I EP = a T g I E = a dc I E
a dc = a T g Note that a is less than 1.0 but close to 1.0 (e.g. a = 0.99)
13
Performance parameters (Consider pnp)
I C = bdc I B But, I C = a dc I E = a dc ( I C + I B )
æ a dc ö
I C = çç ÷÷ I B
è 1 - a dc ø
a dc aT g
bdc = = Note that b is large (e.g. b = 100)
1 - a dc 1 - aT g