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FDQ7238AS
FDQ7238AS
June 2005
FDQ7238AS
Dual Notebook Power Supply N-Channel PowerTrench® in SO-14 Package
S2
S2
S2
G2
SO-14 G1
pin 1 Vin
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a & 1b) 52 68 °C/W
(Note 1c & 1d) 94 118
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA Q2 1 1.8 3 V
VDS = VGS, ID = 250 µA Q1 1 1.7 3
∆VGS(th) Gate Threshold Voltage ID = 10 mA, Referenced to 25°C Q2 −3 mV/°C
∆TJ Temperature Coefficient ID = 250 µA, Referenced to 25°C Q1 −4
RDS(on) Static Drain-Source VGS = 10 V, ID = 14 A Q2 7.2 8.7 mΩ
On-Resistance VGS = 4.5 V, ID = 13 A 8.7 10.5
VGS = 10 V, ID = 14A, TJ = 125°C 10 12.5
VGS = 10 V, ID = 11 A Q1 11 13.2
VGS = 4.5 V, ID = 10 A 13 16
VGS = 10 V, ID = 11, TJ = 125°C 15 19
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V Q2 50 A
VGS = 10 V, VDS = 5 V Q1 50
gFS Forward Transconductance VDS = 10 V, ID = 14 A Q2 58 S
VDS = 10 V, ID = 11 A Q1 43
Dynamic Characteristics
Ciss Input Capacitance Q2 1530 pF
VDS = 15 V, VGS = 0 V, Q1 920
Coss Output Capacitance f = 1.0 MHz Q2 440 pF
Q1 190
Crss Reverse Transfer Capacitance Q2 160 pF
Q1 120
Rg Gate Resistance VGS = 15mV, f = 1.0 MHz Q2 1.9 Ω
Q1 1.9
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
50 2.6
VGS = 10V 3.5V VGS = 3.0V
DRAIN-SOURCE ON-RESISTANCE
6.0V 4.0V
40 2.2
ID, DRAIN CURRENT (A)
4.5V
RDS(ON), NORMALIZED
30 1.8
3.0V
3.5V
20 1.4
4.0V
4.5V
6.0V
10 1 10.0V
2.5V
0 0.6
0 0.5 1 1.5 2 0 10 20 30 40 50
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
1.6 0.024
ID = 14A ID = 7A
DRAIN-SOURCE ON-RESISTANCE
VGS =10V
RDS(ON), ON-RESISTANCE (OHM)
1.4 0.02
RDS(ON), NORMALIZED
1.2 0.016
TA = 125oC
1 0.012
TA = 25oC
0.8 0.008
0.6 0.004
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)
50 100
VDS = 5V VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
10
40
ID, DRAIN CURRENT (A)
TA = 125oC
1
30
25oC
0.1
20 o
TA = 125oC o 0.01
-55 C
-55 C
10
0.001
o
25 C
0 0.0001
1 1.5 2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8 1
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
10 2500
f = 1MHz
ID = 14A
VGS, GATE-SOURCE VOLTAGE (V)
VGS = 0 V
8 2000
VDS = 10V
CAPACITANCE (pF)
20V Ciss
6 1500
15V
4 1000
Coss
2 500
Crss
0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
100 50
100µs P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE
1ms RθJA = 94°C/W
RDS(ON) LIMIT 40
10ms TA = 25°C
ID, DRAIN CURRENT (A)
10
100ms
1s 30
10s
1 DC
20
VGS = 10V
0.1 SINGLE PULSE
RθJA = 94oC/W 10
o
TA = 25 C
0.01 0
0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE TRANSIENT
D = 0.5
RθJA(t) = r(t) * RθJA
0.2
THERMAL RESISTANCE
RθJA = 94°C/W
0.1 0.1
0.05
P(pk)
0.02
0.01 t1
0.01 t2
SINGLE PULSE
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
0.001 TA = 100oC
0.0001
TA = 25oC
0.00001
0 5 10 15 20 25 30
VDS, REVERSE VOLTAGE (V)
TIME : 12nS/div
TIME : 12nS/div
Figure 13. Non-SyncFET (FDS6670A) body
diode reverse recovery characteristic.
50 2.6
VGS = 10V 4.0V VGS = 3.0V
DRAIN-SOURCE ON-RESISTANCE
6.0V 4.5V 2.2
40
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
3.5V
30 1.8
3.5V
20 1.4 4.0V
4.5V
3.0V
6.0V
10 10.0V
1
2.5V
0 0.6
0 0.5 1 1.5 2 2.5 0 10 20 30 40 50
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
1.5 0.036
ID = 5.5A
ID = 11A
DRAIN-SOURCE ON-RESISTANCE
1.4 0.032
RDS(ON), ON-RESISTANCE (OHM)
VGS = 10V
RDS(ON), NORMALIZED
1.3 0.028
1.2 0.024
o
1.1 0.02 TA = 125 C
1 0.016
TA = 25oC
0.9 0.012
0.8 0.008
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance Variation with Figure 18. On-Resistance Variation with
Temperature. Gate-to-Source Voltage.
50 100
VDS = 5V VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
10
40
ID, DRAIN CURRENT (A)
o
1 TA = 125 C
30
25oC
0.1
20 o
o o
-55 C -55 C
TA = 125 C 0.01
10
0.001
25oC
0 0.0001
1 1.5 2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 19. Transfer Characteristics. Figure 20. Body Diode Forward Voltage Variation
with Source Current and Temperature.
10 1500
f = 1MHz
ID = 11A
VGS, GATE-SOURCE VOLTAGE (V)
VGS = 0 V
8 1200
VDS = 10V
CAPACITANCE (pF)
20V Ciss
6 900
15V
4 600
Coss
2 300
Crss
0 0
0 4 8 12 16 20 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
100 50
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
100µs
RθJA = 118°C/W
RDS(ON) LIMIT 40
1ms TA = 25°C
ID, DRAIN CURRENT (A)
10
10ms
100ms
30
1s
1 10s
DC
20
VGS = 10V
0.1 SINGLE PULSE
RθJA = 118oC/W 10
o
TA = 25 C
0.01 0
0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)
Figure 23. Maximum Safe Operating Area. Figure 24. Single Pulse Maximum
Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE TRANSIENT
D = 0.5
RθJA(t) = r(t) * RθJA
0.2
THERMAL RESISTANCE
SINGLE PULSE
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Rev. I16