Invited Paper

ZnO nanorods for light emitting diode applications

Xinyi Chen,a Alan M. C. Ng,a Ka Kan Wong,a Aleksandra B. Djurišić,*a Fang Fang,a Wai Kin
Chan,b Patrick Wai Keung Fong,c Hsian Fei Lui,c Charles Suryac
a
Dept. of Physics, The University of Hong Kong, Hong Kong, P. R. China;
b
Dept. of Physics, The University of Hong Kong, Hong Kong, P. R. China;
c
Dept. of Electronic and Information Engineering, Hong Kong Polytechnic University, Hung Hom,
Kowloon, Hong Kong, P. R. China
*
E-mail: dalek@hku.hk

ABSTRACT

We investigated the influence of the growth method, growth conditions, and post-growth treatments on the ZnO nanorod
properties and the performance of heterojunction light emitting diodes (LEDs) based on ZnO nanorods. Due to small
lattice mismatch between GaN and ZnO, we will mainly consider p-GaN/n-ZnO nanorod heterojunctions. The influence
of p-GaN substrate and the influence of growth method and growth conditions used for ZnO nanorods on the LED
performance will be discussed.
Keywords: zinc oxide, electrodeposition, vapor deposition, LED

1. INTRODUCTION

Zinc oxide is a wide bandgap (3.37 eV) semiconductor with high exciton binding energy (60 meV) that has attracted
significant interest for studying its growth, nanostructured morphologies, optical and electronic properties, as well as its
application in optoelectronic devices, such as solar cells and light emitting diodes (LEDs).1-4 Since the stability and
reproducibility of p-type ZnO has not been completely solved, the p-GaN/n-ZnO heterojunctions are very promising
candidates for ZnO semiconducting devices because of relatively low lattice mismatch between GaN and ZnO (~1.8%2).
Consequently, LEDs based on p-GaN/n-ZnO heterojunction with various device structures fabricated by different
approaches have been reported.5-24 In general, a variety of device architectures and device performances have been
reported in the literature. Reported emission colors include UV,12,13,17,24 blue,6,21 violet,16 yellow,5 yellow and blue,9
violet-blue and UV,10,19,20 violet and yellow-green,11 UV and green,15 UV-violet and red,18 violet, yellow and white,23 and
white.14 In addition, the light emission under forward6,10-21 reverse,5,9 and both forward and reverse7,8,22 bias was reported.
A very wide range of turn-on voltages for the devices was also reported. Different behavior was attributed to various
factors, and changes in the device architecture are frequently attempted to improve the device performance. Thus, the
reported devices also include more complex device structures such as heterojunctions with the structure p-GaN/intrinsic
layer/n-ZnO,6,12,18,20 including devices with one-dimensional ZnO.6 In general, ZnO nanorods (NRs) and nanowires are
expected to result in a better performance than thin film or bulk devices.6,9 It has also been demonstrated that significant
changes in the device performance can be achieved by changing the substrate, interfacial layer and/or annealing.7,8
Usually ZnO nanorods for heterojunctions can be grown by vapor deposition and solution based methods. Vapor
deposited ZnO NRs are typically grown on catalyst10 or seed layer.5 The influence of different seed layers for vapor
deposited ZnO NRs LEDs has been studied.5 Different solution methods, such as hydrothermal method and
electrodeposition, have been also compared.7,8 In this work, p-GaN/n-ZnO heterojunction LEDs were fabricated and two
kinds of methods were employed to grow ZnO nanorods on p-GaN: vapor deposition (VD) and eletrodeposition (ED).
The influence of oxygen flow rate and post-growth annealing to VD ZnO NRs and that of different precursors in
electrodeposition were studied in detail. ZnO nanorod morphologies, photoluminescence (PL) and I-V curves and
electroluminescence (EL) of p-GaN/n-ZnO devices were characterized.

Oxide-based Materials and Devices II, edited by Ferechteh Hosseini Teherani, David C. Look, David J. Rogers,
Proc. of SPIE Vol. 7940, 79400B · © 2011 SPIE · CCC code: 0277-786X/11/$18 · doi: 10.1117/12.878940

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 2. EXPERIMENTAL DETAILS

In all cases, p-GaN films on sapphire used as the substrates were grown by metal organic chemical vapor deposition
(MOCVD). 550 nm of Mg:GaN p-type layer was deposited on top of structure consisting of 550 nm highly resistive
Mg:GaN/2.2 μm undoped GaN layer/30 nm GaN nucleation layer/sapphire substrate. The samples were activated by
annealing in nitrogen at 825ºC. The hole concentration determined by Hall measurement was ~5×1017 cm-3.
For VD ZnO, acetate-derived seed layer was prepared using ethanol solution of zinc acetate5 (5 cycles of placing
solution droplets, rinsing and drying, then annealed at 350ºC for 20 min., and the entire procedure was repeated to ensure
complete coverage of the substrate). In a tube furnace, Ar gas flow was set to ~0.1 Lpm and 0.2 zinc powder (99.995%,
Aldrich) as the source material was placed into the furnace. The substrate was placed above the source, facing down.
Then the system was pumped down to 1.1 Torr and then was heated up to 500oC, after which O2 gas (1 ccm or 5 ccm)
was added. The growth time was 1 hr and then the system was cooled down to room temperature.
ED ZnO was fabricated using a two-electrode system.7 A platinum foil was used as the anode and the substrate was
used as the cathode. Three precursors were used to deposit ZnO NRs directly on bare p-GaN substrate, respectively. For
zinc nitrate precursor, the solution contained 8 mM zinc nitrate hydrate (Zn(NO3)2·xH2O, 99.999%, Aldrich) and 8mM
hexamethylenetetramine (HMT, 99+%, Sigma-Aldrich) in de-ionized (DI) water. When using acetate precursor, the
solution consisted of 4 mM zinc acetate ((C2H3O2)2Zn, 99.99%, Aldrich) and 4 mM HMT in DI water. For chloride
precursor, the solution contained 3 mM zinc chloride (ZnCl2, 99.999%, Aldrich) and 3 mM HMT in DI water. The water
bath temperature was 83oC for nitrate and 80oC for acetate and chloride precursors. At the beginning, the current of 10
mA was applied to nitrate and chloride solutions while the initial current for acetate was 15 mA. After 1 min., the current
was switched to 1 mA for another 29 min. The temperature was fixed during the whole procedure. After
electrodeposition, all the samples were annealed at 600oC in air for 10 min. The growth conditions for different
precursors have been chosen in such a manner to result in a similar ZnO nanorod morphology, i.e. dense array of ZnO
nanorods with a high degree of orientation perpendicular to the substrate.
The LED device structure was Au (70 nm)/Ni (30 nm)/p-GaN/ZnO NRs + insulating layer/Ag (200 nm). For VD
ZnO, spin-on-glass (SOG, Futurex, Inc.) insulating layer was prepared by spin-coating (3000 rpm, 40s), followed by
annealing at 200oC for 1 min. For ED ZnO, polymethyl methacrylate (PMMA, molecular weight: 950 000,
MicroChem.) was used as the insulating layer. 2% PMMA solution in chlorobenzene was spin-coated at 4000 rpm for 45
s on the substrate and then baked at 200oC for 1min., after which oxygen plasma was used to etch the excess PMMA on
the top of the NRs. All the electrodes were prepared by evaporation in high vacuum, using a thermal evaporator AST
PEVA 500 EL. Ni/Au contact has been used as the contact for p-GaN, while Ag (evaporated through a shadow mask
with 1 mm radius) has been used as a contact for ZnO NRs. Both contacts to p-GaN and ZnO were verified to be ohmic.
The device diagram is shown in Fig. 1.

Figure 1 Schematic diagram of p-GaN/ZnO nanorod LEDs

The morphology and structure of the samples were characterized by a scanning electron microscope (SEM, JEOL
JSM-7001F). Photoluminescence (PL) and electroluminescence (EL) spectra were measured by a PDA-512 USB fiber-

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 [4] Djurišić, A. B., Leung, Y. H., Tam, K. H., Hsu, Y. F., Ding, L., Ge, W. K., Zhong, Y. C., Wong, K. S., Chan,
W. K., Tam, H. L., Cheah, K. W., Kwok, W. M. and Phillips, D. L., “Defect emissions in ZnO nanostructures,”
Nanotechnology 18(9), 095702(1-8) (2007).
[5] Chen, X. Y., Ng, A. M. C., Fang, F., Djurišić, A. B., Chan, W. K., Tam, H. L., Cheah, K. W., Fong, P. W. K.,
Lui, H. F. and Surya, C., “The Influence of the ZnO Seed Layer on the ZnO Nanorod/GaN LEDs,” J.
Electrochem. Soc. 157(3), H308-H311 (2010).
[6] Jeong, M. -C., Oh, B. -Y., Ham, M. -H., Lee, S. -W. and Myoung, J. -M., “ZnO-nanowire-inserted GaN/ZnO
heterojunction light-emitting diodes,” Small 3(4), 568-572 (2007).
[7] Ng, A. M. C., Chen, X. Y., Fang, F., Hsu, Y. F., Djurišić, A. B., Ling, C. C., Tam, H. L., Cheah, K. W., Fong,
P. W. K., Lui, H. F., Surya, C. and Chan, W. K., “Solution-based growth of ZnO nanorods for light-emitting
devices: hydrothermal vs. electrodeposition,” Appl. Phys. B 100(4), 851-858 (2010).
[8] Ng, A. M. C., Xi, Y. Y., Hsu, Y. F., Djurišić, A. B., Chan, W. K., Gwo, S., Tam, H. L., Cheah, K. W., Fong, P.
W. K., Lui, H. F. and Surya, C., “GaN/ZnO nanorod light emitting diodes with different emission spectra,”
Nanotechnology 20(44), 445201(1-8) (2009).
[9] Park, W. I., Yi, G. -C., “Electroluminescence in n-ZnO nanorod arrays vertically grown on p-GaN,” Adv.
Mater. 16(1), 87-90 (2004).
[10] Zhang, X. M., Lu, M. Y., Zhang, Y., Chen, L. J. and Wang, Z. L., “Fabrication of a high-brightness blue-light-
emitting diode using a ZnO-nanowire array grown on p-GaN thin film,” Adv. Mater. 21(27), 2767-2770 (2009).
[11] Lai, E., Kim, W., Yang, P. D., “Vertical nanowire-array based light emitting diodes”, Nano Res. 1(2), 123-128
(2008).
[12] Lee, H. -Y., Lee, C. -T. and Yan, J. -T., “Emission mechanism of passivated single n-ZnO:In/i-ZnO/p-GaN-
heterostructured nanorod light-emitting diodes,” Appl. Phys. Lett. 97(11), 111111(1-3) (2010).
[13] Rogers, D. J., Hosseini Teherani F., Yasan, A., Minder, K., Kung, P., Razeghi, M. “Electroluminescence at 375
nm from a ZnO/GaN:Mg/c-Al2O3 heterojunction light emitting diode”, Appl. Phys. Lett. 88(14), 141918 (1-3)
(2006).
[14] Sadaf, J. R., Israr, M. Q., Kishwar, S., Nur, O. and Willander M., "White electroluminescence using ZnO
nanotubes/GaN heterostructure light-emitting diode," Nanoscale Res. Lett. 5(6), 957-960 (2010).
[15] Le, H. Q., Lim, S. K., Goh, G. K. L., Chua, S. J., Ang, N. S. S. and Liu W., "Solution epitaxy of gallium-doped
ZnO on p-GaN for heterojunction light-emitting diodes," Appl. Phys. B 100(4), 705-710 (2010).
[16] Ahn, J., Mastro, M. A., Hite, J., Eddy, C. R. and Kim, J., "Electroluminescence from ZnO nanoflowers/GaN
thin film p-n heterojunction," Appl. Phys. Lett. 97(8), 082111(1-3) (2010).
[17] Lupan, O., Pauporté, T. and Viana, B., "Low-voltage UV-electroluminescence from ZnO-Nanowire array/p-
GaN light-emitting diodes," Adv. Mater. 22(30), 3298-3302 (2010).
[18] Guo, Z., Zhang, H., Zhao, D. X., Liu, Y. C., Yao, B., Li, B. H., Zhang, Z. Z. and Shen, D. Z., "The ultralow
driven current ultraviolet-blue light-emitting diode based on n-ZnO nanowires/i-polymer/p-GaN
heterojunction," Appl. Phys. Lett. 97(17), 173508(1-3) (2010).
[19] Xu, S., Xu, C., Liu, Y., Hu, Y. F., Yang, R. S., Yang, Q., Ryou, J. -H., Kim, H. J., Lochner, Z., Choi, S.,
Dupuis, R. and Wang, Z. L., "Ordered nanowire array blue/near-UV light emitting diodes," Adv. Mater. 22(42),
4749-4753 (2010).
[20] Chen, M. -J., Shih, Y. -T., Wu, M. -K., Chen, H. -C., Tsai, H. -L., Li, W. -C., Yang, J. -R., Kuan, H. and
Shiojiri, M., "Structure and ultraviolet electroluminescence of n-ZnO/SiO2-ZnO nanocomposite/p-GaN
heterostructure light-emitting diodes," IEEE Trans. Electron Devices 57(9), 2195-2202 (2010).
[21] Park, S. -H., Kim, S. -H. and Han, S. -W., “Growth of homoepitaxial ZnO film on ZnO nanorods and light
emitting diode applications,” Nanotechnology 18(5), 055608(1-6) (2007).
[22] Wu, M. K., Shih, Y. T., Li, W. C., Chen, H. C., Chen, M. J., Kuan, H., Yang, J. R., Shiojiri, M., “Ultraviolet
electroluminescence from n-ZnO-SiO2-ZnO nanocomposite/p-GaN heterojunction light emitting diodes at
forward and reverse bias”. IEEE Photonics Technol. Lett. 20(21), 1772-1774 (2008).
[23] Lee, S. -D., Kim, Y. -S., Yi, M. -S., Choi, J. -Y. and Kim, S. -W., “Morphology control and
electroluminescence of ZnO nanorod/GaN heterojunctions prepared using aqueous solution,” J. Phys. Chem. C
113(20), 8954-8958 (2009).
[24] Guo, R., Nishimura, J., Matsumoto, M., Higashihata, M., Nakamura, D. and Okada, T., “Electroluminescence
from ZnO nanowire-based p-GaN/n-ZnO heterojunction light-emitting diodes,” Appl. Phys. B 94(1), 33-38
(2009).

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 Figure 3 EL spectra of VD ZnO NRs LEDs using (a) 1 ccm O2; (b) 5 ccm O2; (c) annealed 1 ccm ZnO; (d) annealed 5 ccm ZnO.

Figure 4 I-V curves of VD ZnO LED devices.

Fig. 5 shows the SEM images of ED ZnO NRs using different precursors and the corresponding PL spectra. We can
observe that the obtained spectra are quite similar, possibly because all the samples have been subjected to the same
annealing conditions. In the case of chloride precursor, in addition to the UV and defect emission of ZnO, we can also
observe the p-GaN emission from the substrate (centered at ~440 nm), which is likely due to the fact that for chloride
precursor some areas of the substrate contained less dense nanorods. LEDs with ED ZnO nanorods were lighting up
under reverse bias with the turn-on voltage at 4 V for nitrate and 3 V for acetate and chloride as shown in Fig. 6. The
emission was uniform across the device area under the top electrode. In these devices, emission under forward bias was

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 also observed, but at significantly higher bias voltages, and the emission was spotty. All the devices exhibited I-V curve
shape resembling the backward diode curve, similar to our previous work.5,7,8

Figure 5 SEM images of ED ZnO NRs fabricated from different precursors (a) nitrate; (b) acetate; (c) chloride. (d) PL spectra of ED
ZnO NRs.

Figure 6 EL spectra of ED ZnO NRs LEDs prepared using different precursors (a) nitrate; (b) acetate; (c) chloride; (d) I-V curves of
ED ZnO devices.

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 Yellow emission under reverse bias was previously attributed to the defect emission from ZnO.9 Light emission
under reverse bias can also occur due to avalanche breakdown,22 but considering the absence of any emission from n-
GaN as well as low bias voltages, this mechanism is not a likely explanation of the observed emission. All the devices
exhibited yellow emission at relatively low voltages under reverse bias, and the turn-on voltage was smaller for devices
grown by ED. Thus, while the change in the growth conditions (precursor used for ED or oxygen gas flow rate for VD)
resulted in some changes of the device performance, for all the devices we observe similar behavior (i.e. lighting up
under reverse bias at low voltages) and the same electroluminescence emission color in spite of the different growth
method and different defect photoluminescence. In our previous work, we have shown that the defect emission in the
vapor-deposited ZnO is higher near the interface.5 Thus, since defects are higher near the GaN/ZnO interface and since
the observed emission does not necessarily match the observed PL emission from ZnO, we can conclude that the yellow
emission originates either from p-GaN/n-ZnO interface or from p-GaN layer. We have also previously shown that for
vapor-deposited rods, the turn-on voltage is dependent on the device structure (presence of a seed layer), while the shape
of the I-V curve and the obtained emission color was the same for all devices.5 Here we have also demonstrated that the
change in O2 flow rate and annealing do not affect the LED emission color even though these procedures affect the PL of
the ZnO. On the other hand, we have previously shown that for solution based growth methods of ZnO nanorods, the
seed layer and/or growth method could affect not only the turn-on voltage but also the emission color both under forward
and reverse bias even though the I-V curve shape did not exhibit significant changes.7 Presence of an electrodeposited
ZnO at the interface (as a seed layer or as nanorods without seed layer) resulted in yellow emission under reverse bias,7
same as observed in this work. Here we have also shown that this yellow emission is independent on the precursor used
for ZnO growth. For acetate-derived seed and hydrothermal growth of ZnO nanorods, larger variation in the device
emission colors can be obtained.7,8 We have also previously shown that the substrate used and the annealing conditions
can significantly affect the device performance of ZnO/GaN heterojunction LEDs,8 which is different behavior compared
to vapor-deposited nanorods. The reasons for this are not fully clear, but it is very likely that the acetate-derived seed
layer at the interface results in a change of the energy band alignment across the interface and thus affects the position of
the recombination zone in the devices. The obtained backward diode-like I-V curves5,7,8 can likely be attributed to higher
doping in ZnO nanorods as well as large energy band offsets in GaN/ZnO heterojunctions which would favor tunneling.
Tunneling is also consistent with the lighting up under reverse bias.5,7-9 The light likely originates from p-GaN/ZnO
interface or from p-GaN itself.

4. CONCLUSION

We have prepared p-GaN/n-ZnO nanorods by different deposition methods, namely vapor deposition and
electrodeposition and investigated the influence of deposition conditions and/or post deposition treatments on the device
performance. We have previously studied a number of different combinations of ZnO growth methods, p-GaN substrates
and p-GaN/ZnO nanorod post-deposition treatments. From all the data obtained, we can conclude that the device
behavior and emission color are predominantly determined by the GaN substrate and GaN/ZnO interface, and to a
smaller degree by native defects in ZnO.

ACKNOWLEDGEMENT

Financial support from the Strategic Research Theme, University Development Fund, and Seed Funding Grant,
(administrated by The University of Hong Kong) is acknowledged.

REFERENCES

[1] Djurišić, A. B. and Leung Y. H., “Optical properties of ZnO nanostructures,” Small 2(8-9), 944-961 (2006).
[2] Özgür, Ü., Alivov, Ya. I., Liu, C., Teke, A., Reshchikov, M. A., Doğan, S., Avrutin, V., Cho, S. -J. and Morkoç,
H., “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (1-103) (2005).
[3] Djurišić, A. B., Ng, A. M. C. and Chen, X.Y., “ZnO nanostructures for optoelectronics: Material properties and
device applications,” Prog. Quantum Electron. 34(4), 191-259 (2010).

Proc. of SPIE Vol. 7940 79400B-6

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 [4] Djurišić, A. B., Leung, Y. H., Tam, K. H., Hsu, Y. F., Ding, L., Ge, W. K., Zhong, Y. C., Wong, K. S., Chan,
W. K., Tam, H. L., Cheah, K. W., Kwok, W. M. and Phillips, D. L., “Defect emissions in ZnO nanostructures,”
Nanotechnology 18(9), 095702(1-8) (2007).
[5] Chen, X. Y., Ng, A. M. C., Fang, F., Djurišić, A. B., Chan, W. K., Tam, H. L., Cheah, K. W., Fong, P. W. K.,
Lui, H. F. and Surya, C., “The Influence of the ZnO Seed Layer on the ZnO Nanorod/GaN LEDs,” J.
Electrochem. Soc. 157(3), H308-H311 (2010).
[6] Jeong, M. -C., Oh, B. -Y., Ham, M. -H., Lee, S. -W. and Myoung, J. -M., “ZnO-nanowire-inserted GaN/ZnO
heterojunction light-emitting diodes,” Small 3(4), 568-572 (2007).
[7] Ng, A. M. C., Chen, X. Y., Fang, F., Hsu, Y. F., Djurišić, A. B., Ling, C. C., Tam, H. L., Cheah, K. W., Fong,
P. W. K., Lui, H. F., Surya, C. and Chan, W. K., “Solution-based growth of ZnO nanorods for light-emitting
devices: hydrothermal vs. electrodeposition,” Appl. Phys. B 100(4), 851-858 (2010).
[8] Ng, A. M. C., Xi, Y. Y., Hsu, Y. F., Djurišić, A. B., Chan, W. K., Gwo, S., Tam, H. L., Cheah, K. W., Fong, P.
W. K., Lui, H. F. and Surya, C., “GaN/ZnO nanorod light emitting diodes with different emission spectra,”
Nanotechnology 20(44), 445201(1-8) (2009).
[9] Park, W. I., Yi, G. -C., “Electroluminescence in n-ZnO nanorod arrays vertically grown on p-GaN,” Adv.
Mater. 16(1), 87-90 (2004).
[10] Zhang, X. M., Lu, M. Y., Zhang, Y., Chen, L. J. and Wang, Z. L., “Fabrication of a high-brightness blue-light-
emitting diode using a ZnO-nanowire array grown on p-GaN thin film,” Adv. Mater. 21(27), 2767-2770 (2009).
[11] Lai, E., Kim, W., Yang, P. D., “Vertical nanowire-array based light emitting diodes”, Nano Res. 1(2), 123-128
(2008).
[12] Lee, H. -Y., Lee, C. -T. and Yan, J. -T., “Emission mechanism of passivated single n-ZnO:In/i-ZnO/p-GaN-
heterostructured nanorod light-emitting diodes,” Appl. Phys. Lett. 97(11), 111111(1-3) (2010).
[13] Rogers, D. J., Hosseini Teherani F., Yasan, A., Minder, K., Kung, P., Razeghi, M. “Electroluminescence at 375
nm from a ZnO/GaN:Mg/c-Al2O3 heterojunction light emitting diode”, Appl. Phys. Lett. 88(14), 141918 (1-3)
(2006).
[14] Sadaf, J. R., Israr, M. Q., Kishwar, S., Nur, O. and Willander M., "White electroluminescence using ZnO
nanotubes/GaN heterostructure light-emitting diode," Nanoscale Res. Lett. 5(6), 957-960 (2010).
[15] Le, H. Q., Lim, S. K., Goh, G. K. L., Chua, S. J., Ang, N. S. S. and Liu W., "Solution epitaxy of gallium-doped
ZnO on p-GaN for heterojunction light-emitting diodes," Appl. Phys. B 100(4), 705-710 (2010).
[16] Ahn, J., Mastro, M. A., Hite, J., Eddy, C. R. and Kim, J., "Electroluminescence from ZnO nanoflowers/GaN
thin film p-n heterojunction," Appl. Phys. Lett. 97(8), 082111(1-3) (2010).
[17] Lupan, O., Pauporté, T. and Viana, B., "Low-voltage UV-electroluminescence from ZnO-Nanowire array/p-
GaN light-emitting diodes," Adv. Mater. 22(30), 3298-3302 (2010).
[18] Guo, Z., Zhang, H., Zhao, D. X., Liu, Y. C., Yao, B., Li, B. H., Zhang, Z. Z. and Shen, D. Z., "The ultralow
driven current ultraviolet-blue light-emitting diode based on n-ZnO nanowires/i-polymer/p-GaN
heterojunction," Appl. Phys. Lett. 97(17), 173508(1-3) (2010).
[19] Xu, S., Xu, C., Liu, Y., Hu, Y. F., Yang, R. S., Yang, Q., Ryou, J. -H., Kim, H. J., Lochner, Z., Choi, S.,
Dupuis, R. and Wang, Z. L., "Ordered nanowire array blue/near-UV light emitting diodes," Adv. Mater. 22(42),
4749-4753 (2010).
[20] Chen, M. -J., Shih, Y. -T., Wu, M. -K., Chen, H. -C., Tsai, H. -L., Li, W. -C., Yang, J. -R., Kuan, H. and
Shiojiri, M., "Structure and ultraviolet electroluminescence of n-ZnO/SiO2-ZnO nanocomposite/p-GaN
heterostructure light-emitting diodes," IEEE Trans. Electron Devices 57(9), 2195-2202 (2010).
[21] Park, S. -H., Kim, S. -H. and Han, S. -W., “Growth of homoepitaxial ZnO film on ZnO nanorods and light
emitting diode applications,” Nanotechnology 18(5), 055608(1-6) (2007).
[22] Wu, M. K., Shih, Y. T., Li, W. C., Chen, H. C., Chen, M. J., Kuan, H., Yang, J. R., Shiojiri, M., “Ultraviolet
electroluminescence from n-ZnO-SiO2-ZnO nanocomposite/p-GaN heterojunction light emitting diodes at
forward and reverse bias”. IEEE Photonics Technol. Lett. 20(21), 1772-1774 (2008).
[23] Lee, S. -D., Kim, Y. -S., Yi, M. -S., Choi, J. -Y. and Kim, S. -W., “Morphology control and
electroluminescence of ZnO nanorod/GaN heterojunctions prepared using aqueous solution,” J. Phys. Chem. C
113(20), 8954-8958 (2009).
[24] Guo, R., Nishimura, J., Matsumoto, M., Higashihata, M., Nakamura, D. and Okada, T., “Electroluminescence
from ZnO nanowire-based p-GaN/n-ZnO heterojunction light-emitting diodes,” Appl. Phys. B 94(1), 33-38
(2009).

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