SM1A23NSFP ®

N-Channel Enhancement Mode MOSFET

Features Pin Description

· 100V/13A,
RDS(ON)= 100mW(max.) @ VGS= 10V
RDS(ON)= 110mW(max.) @ VGS= 4.5V
· Reliable and Rugged D
S
G
· Lead Free and Green Devices Available
(RoHS Compliant) Top View of TO-220FP
· ESD Protection
D

Applications G

· Power Management in DC/DC Converter.

N-Channel MOSFET

Ordering and Marking Information

SM1A23NS Package Code
FP : TO-220FP
Assembly Material Operating Junction Temperature Range
Handling Code C : -55 to 150 oC
Handling Code
Temperature Range TU : Tube (50ea/tube)
Assembly Material
Package Code G : Halogen and Lead Free Device

SM1A23NS FP : SM1A23N XXXXX - Lot Code

XXXXX

Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

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Rev. A.1 - January, 2014
SM1A23NSFP ®

Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

Symbol Parameter Rating Unit

Common Ratings
VDSS Drain-Source Voltage 100
V
VGSS Gate-Source Voltage ±20
TJ Maximum Junction Temperature 150
°C
TSTG Storage Temperature Range -55 to 150
IS Diode Continuous Forward Current TC =25°C 6 A
TC =25°C 13
ID Continuous Drain Current
TC =100°C 8 A
a
IDM Pulsed Drain Current TC =25°C 40
TC =25°C 35
PD Maximum Power Dissipation W
TC =100°C 14
R qJC Thermal Resistance-Junction to Case 3.5 °C/W
TA=25°C 3
ID Continuous Drain Current A
TA=70°C 2.5
TA=25°C 2
PD Maximum Power Dissipation W
TA=70°C 1.28
RqJA Thermal Resistance-Junction to Ambient 62.5 °C/W
b
IAS Avalanche Current, Single pulse L=0.5mH 7 A
b
EAS Avalanche Energy, Single pulse L=0.5mH 12 mJ
Note a：Pulse width limited by max. junction temperature.
Note b：UIS tested and pulse width limited by maximum junction temperature 150 o C (initial temperature Tj=25oC).

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Rev. A.1 - January, 2014
SM1A23NSFP ®

Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 100 - - V
VDS=80V, VGS =0V - - 1
IDSS Zero Gate Voltage Drain Current mA
TJ=85°C - - 30
VGS(th) Gate Threshold Voltage VDS=VGS, I DS=250mA 1 2 3 V
I GSS Gate Leakage Current VGS=±20V, V DS=0V - - ±10 mA
VGS=10V, IDS=6A - 80 100 mW
RDS(ON) c Drain-Source On-state Resistance
VGS=4.5V, IDS=4A - 85 110 mW
Diode Characteristics
VSD c Diode Forward Voltage ISD=6A, VGS=0V - 0.8 1.3 V
trr Reverse Recovery Time - 28 - ns
ISD=6A, dlSD /dt=100A/ms
Qrr Reverse Recovery Charge - 40 - nC
d
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,f=1MHz - 2.5 - W
C iss Input Capacitance - 740 960
VGS=0V,
Coss Output Capacitance VDS=30V, - 45 - pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance - 24 -
td(ON) Turn-on Delay Time - 11 20
tr Turn-on Rise Time VDD=30V, R L=30W, - 6 11
IDS=1A, VGEN =10V, ns
td(OFF) Turn-off Delay Time RG=6W - 27 49
tf Turn-off Fall Time - 5 10
d
Gate Charge Characteristics
VDS=30V, VGS =4.5V,
Qg Total Gate Charge - 7.1 -
IDS=6A
Qg Total Gate Charge - 15 20 nC
VDS=30V, VGS =10V,
Qgs Gate-Source Charge - 2.8 -
IDS=6A
Q gd Gate-Drain Charge - 2.8 -
Note c：Pulse test ; pulse width£300ms, duty cycle£2%.
Note d：Guaranteed by design, not subject to production testing.

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Rev. A.1 - January, 2014
SM1A23NSFP ®

Typical Operating Characteristics

Power Dissipation Drain Current

40 14

35 12

30
10

ID - Drain Current (A)

Ptot - Power (W)

25
8
20
6
15

4
10

5 2
o o
T C=25 C T C=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature

Safe Operation Area Thermal Transient Impedance

200 3
Normalized Transient Thermal Resistance

100 1 Duty = 0.5

0.2

0.1
ID - Drain Current (A)

0.1
it
Lim

100 ms 0.05
10
n)
s(o

0.02
Rd

0.01
0.01
1ms
1
1E-3
DC
Single Pulse
o o
TC=25 C RqJC :3.5 C/W
0.1 1E-4
0.01 0.1 1 10 100 500 1E-6 1E-5 1E-4 1E-3 0.01 0.1

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

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Rev. A.1 - January, 2014
SM1A23NSFP ®

Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

20 140

VGS=3.5,4,5,6,7,8,9,10V
16 120

RDS(ON) - On - Resistance (mW)

ID - Drain Current (A)

12 100
VGS=4.5V

8 3V 80
VGS=10V

4 60

2.5V
0 40
0 1 2 3 4 5 6 0 3 6 9 12 15 18

VDS - Drain - Source Voltage (V) ID - Drain Current (A)

Gate-Source On Resistance Gate Threshold Voltage

180 1.6
IDS=6A IDS=250mA

160 1.4
RDS(ON) - On - Resistance (mW)

Normalized Threshold Voltage

140 1.2

120 1.0

100 0.8

80 0.6

60 0.4
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

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Rev. A.1 - January, 2014
SM1A23NSFP ®

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

2.5 40
VGS = 10V
IDS = 6A

2.0
10
Normalized On Resistance

IS - Source Current (A)

o
Tj=150 C
1.5
o
Tj=25 C

1.0 1

0.5

o
RON@Tj=25 C: 80mW
0.0 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

1100 10
Frequency=1MHz VDS= 30V
1000 9
IDS= 6A
900 8
VGS - Gate-source Voltage (V)

800
Ciss 7
C - Capacitance (pF)

700
6
600
5
500
4
400
3
300

200 2

100 Coss 1

0 Crss 0
0 8 16 24 32 40 0 3 6 9 12 15

VDS - Drain-Source Voltage (V) QG - Gate Charge (nC)

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Rev. A.1 - January, 2014
SM1A23NSFP ®

Avalanche Test Circuit and Waveforms

VDS VDSX(SUS)
L tp

VDS
DUT
IAS

RG
VDD
VDD
EAS
tp IL
0.01W
tAV

Switching Time Test Circuit and Waveforms

VDS
RD
VDS
DUT 90%

VGS
RG
VDD

10%
tp VGS
td(on) tr td(off) tf

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Rev. A.1 - January, 2014
SM1A23NSFP ®

Package Information
TO-220FP

E A

A1

d1
D
L1
L

b e c A2

b2

S
Y
TO-220FP RECOMMENDED LAND PATTERN
M MILLIMETERS INCHES
B
O
L MIN. MAX. MIN. MAX.
2.54
A 4.20 4.80 0.165 0.189
45
A1 2.60 3.20 0.102 0.126 R0.
A2 2.10 2.90 0.083 0.114
b 0.50 1.00 0.020 0.039
b2 0.90 1.90 0.035 0.075
c 0.30 0.80 0.012 0.031
UNIT: mm
D 8.10 9.10 0.319 0.358
d1 14.50 16.50 0.571 0.650
d2 12.10 12.90 0.476 0.508
E 9.70 10.70 0.382 0.421
e 2.54 BSC 0.100 BSC
L 13.00 14.50 0.512 0.570
L1 1.60 4.00 0.063 0.157
P 3.00 3.60 0.118 0.142

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Rev. A.1 - January, 2014
SM1A23NSFP ®

Classification Profile

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Rev. A.1 - January, 2014
SM1A23NSFP ®

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)

Average ramp-up rate

3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

3
Package Volume mm Volume mm3
Thickness <350 ³350
<2.5 mm 235 °C 220 °C
³2.5 mm 220 °C 220 °C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package Volume mm 3 Volume mm3 Volume mm 3
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
³2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax
HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050

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Rev. A.1 - January, 2014