DigitalElectronics

FETs analyses
 MESFETs
Use of Ga As in the construction of
semiconductor devices.
The need For high-Speed devices and improved
Production methods in recent years
Have been established astrong demand for
Large-scale integrated circuits using Ga As
Basic Construction of an n-channel
MESFETs
Schottky barriers are barriers established by
depositing a metal such as on n-type channel.
The absence of an insulating layer reduces the
distance between the metal contact surface of
the gate and the semiconductor layer
 resulting in a lower level of stray capacitance
Between the two surfaces wich reduced
sensetivity to high frequencies ,
with further Supports the high mobility of
carriers in the GA AS material .
The presence of metal-semiconductor junction
Is the reason such FETs are called “metal-
semiconductor field-effect transistors
(MESFETs)
Depletion-type MESFET are so similar to those •
of the applied to depletion-type MOSFETs.
There are also enhancement-type MESFETs with
aconstruction of symbol
The response and are essentially the same as for
the enhancement-type MOSFET
Depletion –type and enhancement –type
MESFETs are made with an n-channel between
the drain and the source and therefore only n-
type MESFETs are commercially available.
 FET BIASING
The general relationships that can be applied to the
dc of analysis of all FET amplifiers are
IG =~0 A-----------------------(2-8)
ID=IS
For JFETs and depletion –type MOSFETs and
MESFETs Shockley’s equation is applied
ID=Idss(1-VGs/VP)^2
For enhancement MOSFETs and MESFETs ,the
following equation is applicable
ID=K (VGs-VT)^2