Experiment No.

1
The Diode Characteristics

OBJECTIVES:

1. Measure the forward and reverse biased characteristics for a diode.

2. Perform a diode test with an ohmmeter.

MATERIALS NEEDED:

1. Resistors: one 330 Ω, one 1.0MΩ

2. One switching diode
3. Multimeter
4. Power supply
5. Bread board
6. Connecting wires
7. Alligator clips

PROCEDURES:

1. Measure and record the values of the resistors listed in Table 1-1. Then check your diode with an ohmmeter by
measuring the forward and reverse resistance by reversing the meter across the diode. The diode passes this test if
the resistance is significantly different between the two measurements. If you are using an autoranging meter, the
ohmmeter may not produce enough voltage to overcome the barrier potential; in this case, consult the operator’s
manual for specific instructions to down range the meter. Record the data on Table 1-1.

Table 1-1
Componen Listed Measured
t Value Value
R1
R2
D1 forward resistance
D1 reverse resistance

2. Construct the forward-biased circuit shown in Figure 1-1. The line on the diode indicates the cathode side of the
diode (with forward bias, this is the negative side). Set the power supply to zero volts.

Figure 1-1

3. Monitor the voltage drop across the diode (VF). Slowly increase VS to establish 3V across the diode. Measure the
voltage across the resistor, VR1, and record it in Table 1-2.

Table 1-2
VS VF VR1 IF
3
4.5
 6

4. The diode forward current, IF, can be found by applying Ohm’s Law to R1. Compute IF and enter the computed
current in Table 1-2.

5. Repeat steps 3 and 4 for each voltage listed in Table 1-2.

6. The data on this step will be accurate only if your voltmeter has high input impedance. You can find out if your
meter has high input impedance by measuring the power supply voltage through a series 1.0MΩ resistor. If the
meter reads the supply voltage accurately, it has high input impedance. Connect the reverse biased circuit shown
in Figure 1-2. Set the power supply to each voltage listed in Table 1-3. Apply Ohm’s Law to the resistor and
compute the reverse current in each case. Enter the computed current in Table 1-3.

Figure 1-2

Table 1-3
VS VR VR2 IR
3
4.5
6

DISCUSSION:

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CONCLUSION:
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 Experiment No. 2
The Zener Regulator

OBJECTIVES:

1. Test a zener regulator circuit for the effect of a changing source and a changing load.
2. From measurements, compute the line and load regulation of a zener regulator circuit.

MATERIALS NEEDED:

1. Resistors: one 220Ω, one 2.2kΩ

2. One 1.0kΩ potentiometer
3. One 5V zener (1N4733 or equivalent)
4. Multimeter
5. Power supply
6. Bread board
7. Connecting wires
8. Alligator clips

PROCEDURES:

1. Measure and record the values of the resistors listed in Table 2-1.

Table 2-1
Componen Listed
Measured Value
t Value
R1
RL

2. A common application of zener diodes is in regulators. In this step, you will investigate a zener regulator as the
source voltage is varied. Connect the circuit shown in Figure 2-1. Set V S to each voltage listed in Table 2-2 and
measure the output (load) voltage, VOUT.

Figure 2-1

Table 2-2
IS
VOUT IL VR1 IZ
VS (Computed
(Measured) (Computed) (Computed) (Computed)
)
3
4.5
6
 9
10.5
12

3. From the measurements in step 2, complete Table 2-2. Apply Ohm’s law to compute the load current, I L, for each
setting of the source voltage. The voltage across R1 (VR1) can be found by applying Kirchhoff’s Voltage Law
(KVL) to the outside loop. It is the difference between the source voltage, V S, and the output voltage VOUT. Note
that IS through R1 can be found using Ohm’s Law. Find the zener current, I Z, by applying Kirchhoff’s Current Law
(KCL) to the junction at the top of the zener diode.

4. In this step, you will test the effect of a zener regulator working with a fixed source voltage with a variable load
resistance. Often, the load is an active circuit (such as a logic circuit) in which the current changes because of
varying conditions. We will simulate this behavior with a potentiometer. Construct the circuit shown in Figure 2-
2. Set the power supply to a fixed +15V output and adjust the potentiometer (R L) form maximum resistance.

Figure 2-2

5. With the potentiometer set to 1.0kΩ (maximum resistance), measure the load voltage (V OUT) and record the
voltage in Table 2-3. Compute the other parameters listed on the first row as before. (Use Ohm’s Law for I L, KVL
for VR1, Ohm’s Law for IS, and KCL for IZ).

Table 2-3
IS
VOUT IL VR1 IZ
R2 (Computed
(Measured) (Computed) (Computed) (Computed)
)
1k
750
500
250
100

6. Set the potentiometer to each value listed in Table 2-3 and repeat step 5.

DISCUSSION:

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CONCLUSION:
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Experiment No. 3
BJT Biasing

OBJECTIVES:

1. Construct and analyze three types of transistor bias circuits: Fixed-Bias, Voltage-Divider Bias and DC Bias with
Voltage Feedback. Compare the stability of the bias with different transistors.
2. Select appropriate bias resistors for each type of bias.

MATERIALS NEEDED:

Resistors (one of each): 470Ω, 2.0kΩ, 6.8kΩ, 33kΩ, 360kΩ, 1.0MΩ

Three small signal npn transistors: (2N3904 or equivalent)

PROCEDURES:

1. Measure and record the values of the resistors listed in Table 4-1.

Table 4-1
Listed Measured
Component
Value Value
 999.999k
RB  1MOhm Ohm
RC  2kOhm  2kOhm

2. You will test each of three transistors, one at a time, in a self-bias circuit. The manufacturer’s specification sheet
for a 2N3904 transistor indicates that βDC can range from 100 to 400. Assuming the βDC is 200, compute the
parameters listed in Table 4-2 for the fixed-bias circuits shown in Figure 4-1. Start by computing the voltage
across the base resistor, VRB, and the current in this resistor, IB. Using βDC find the collector current, IC, the voltage
across the collector resistor, VRC, and the voltage from collector to ground, VC.

Figure 4-1

Table 4-2
DC Computed Q1 Q2 Q3
Parameter Value (Measured Value) (Measured Value) (Measured Value)
 VRB  11.3V  11.322 V  11.322 V 11.322 V
 11.3
IB microA
IC  2.27 mA
VRC  4.5174mV  3.52 V  3.52 V  3.52 V
VC  7.4826V  8.48 V  8.48 V  8.48 V

3. Label each of three npn transistors as Q 1, Q2, and Q3. Construct the circuit shown in Figure 4-1 using Q1. Measure
the voltages listed in Table 4-2 for Q1. Then remove Q1 from the circuit and test the other two transistors in the
same circuit. Record all measurements in Table 4-2.

4. Test voltage-divider bias for the same three transistors. Start by measuring and recording the values of the
resistors listed in Table 4-3.

Table 4-3
Listed Measured
Resistor
Value Value
R1
R2
RE
RC

5. Compute the parameters listed in Table 4-4 for the circuit shown in Figure 4-2.

Figure 4-2

Table 4-4
DC Computed Q1 Q2 Q3
Parameter Value (Measured Value) (Measured Value) (Measured Value)
 445.005m
VB V
VE  1.27V
IE ≈ IC  2.697
VRC  5.39V
VC  5.34V

6. Construct the circuit shown in Figure 4-2 using transistor Q1. Measure the voltages listed in Table 4-4 for Q1.
Then remove Q1 from the circuit and test the other two transistors in the same circuit. Record all the
measurements in Table 4-4.
 7. In this step, you will compare the same three transistors in a DC bias with voltage feedback circuit. Measure and
record all the values of the resistors listed in Table 4-5.

Table 4-5
Listed Measured
Resistor
Value Value
RB
RC
8. Compute the parameters listed in Table 4-6 for the circuit shown in Figure 4-3. Assume the βDC is 200 for the
calculation. Then find the voltage across the collector resistor, V RC, and the collector voltage, VC.

Figure 4-3

Table 4-6
DC Computed Q1 Q2 Q3
Parameter Value (Measured Value) (Measured Value) (Measured Value)
IC
VRC
VC

9. Construct the circuit shown in Figure 4-3 using transistor Q1. Measure the voltages listed in Table 4-6 for Q1.
Then remove Q1 from the circuit and test the other two transistors in the same circuit. Record all the
measurements in Table 4-6.

DISCUSSION:

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CONCLUSION:
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Experiment No. 4
JFET Biasing

OBJECTIVES:

1. Determine the VGS(OFF) indirectly from a Self-Bias circuit.

2. Specify the source resistor for a self-biased JFET that will provide a specified I D and draw the load line for the
resistor.
3. Specify the source resistor for a JFET using Voltage-Divider bias and test the circuit.

MATERIALS NEEDED:

Resistors: one 2.2kΩ, one 330kΩ, 1.0MΩ, two values to be determined by the student
One 1.0kΩ Potentiometer
One 2N5458 JFET
One milliammeter 0-10mA

PROCEDURES:

1. In this step, you will measure the values of V GS(OFF) and IDSS. You will determine the value of VGS(OFF) indirectly by
measuring two points on the transfer characteristic and computing V GS(OFF) from the idealized model for FET
behavior.

a. Set up the circuit shown in Figure 5-1. Set the potentiometer for zero ohms and record the current reading on
the milliammeter. This IDSS.

b. Increase the resistance until the milliammeter reads 50% of I DSS. At this point measure VGS. Multiply the
reading of VGS. Multiply the reading of VGS by 3.4V; this is VGS(OFF).

Enter the values of VGS(OFF) and IDSS into Table 5-1.

 Figure 5-1

Table 5-1
Measured JFET Parameters
VGS(off) = -10.91 V
IDSS = 12 mA

2. Plot 5-1 shows a normalized graph of ID and VGS. Normalized means that the values on the curve have been set to
dimensionless numbers that can be converted to actual measured quantities by a scaling operation. In the
normalized curve shown, VGS(OFF) and IDSS are both set to the value 1.0. convert the scale to a practical curve for
your JFET by multiplying the values shown on the x-axis by VGS(OFF) and the values shown on the y-axis by IDSS.
Place the practical values on the graph in the space provided.

Plot 5-1

3. Voltage-divider bias uses a combination of a voltage divider on the gate plus a source resistor to establish the
source at a higher potential than the gate. The divider is shown in Figure 5-2.

Figure 5-2

Table 5-2
Voltage-Divider Q1
Computed Value
Biased JFET (Measured Value)
VG  2.98 V  2.54 V
VS  8.76 V  2.05 V
RS  3.3 k Ohm  3.3 k Ohm
ID  2.65 mA  620 uA
 4. Compute and measure the values listed in Table 5-2.

DISCUSSION:

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CONCLUSION:
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