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Silan Microelectronics SD670XDmanual

Low power consumption high constant current precision non-isolated step-down typeledLighting driver chip

describe

SD670XDis a dedicated non-isolatedleddriven control chip, peripheral applications take Buckarchitecture, assisted

by unique sampling technology, so as to achieve high constant current accuracy and high line/load regulation.

SD670XDVarious protection functions are integrated internally, including output open-short circuit protection, cycle-by-cycle overcurrent

protection, overtemperature protection, etc.

SD670XDFeatures ultra-low start-up and operating currents over the full voltage input range (

85VAC~265VAC) Efficiently drive high brightnessled.

DIP-7-300-2.54
SD670XDBuilt-in high voltage powerMOSFET, effectively saving the system cost and the volume of the whole machine.

characteristic

- built-in500VHigh voltage powerMOSFET Precise

- constant current (<±3%)supplyled Output open and

application

- short circuit protection - Bulb

- CSOpen and short circuit protection - T5/T8 LEDlamps
- VCCUndervoltage protection - All kinds ofledlighting applications

- Over temperature protection

- Cycle-by-cycle overcurrent protection

- No auxiliary winding

Product specification classification

product name Package type Material Package

SD6701DTR DIP-7-300-2.54 Halogen free Feed tube

SD6702DTR DIP-7-300-2.54 Halogen free Feed tube

SD6703DTR DIP-7-300-2.54 Halogen free Feed tube

SD6704DTR DIP-7-300-2.54 Halogen free Feed tube

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 Silan Microelectronics SD670XDmanual
Internal block diagram

5
VCC

DRAIN
6/7

UVLO Undervoltage detection

M2

VREF5.5V internal

voltage rail

Open at zero crossing

CS S
+-
R1
400mV logic
Current limiting benchmark
Q
Constant current reference
Current Limit Comparator drive
M1
CS
+-

+-

R2
CS sampling VCOMP
Keep
COMPComparators Overvoltage protection 4
Transconductance Amplifier set up CS

GND
ROVP3
1

Limit parameters

ginseng number symbol parameter range unit

Drain gate voltage (RGS=1MW) VDGR 600 V

gate-source voltage VGS ±30 V
SD6701D 4
SD6702D 8
Drain current pulse IDM A
SD6703D 10
SD6704D 12

SD6701D 1
Drain continuous current SD6702D 2
ID A
(Tamb=25°C) SD6703D 3
SD6704D 4
voltage VCC - 0.3~17 V
ROVPTerminal voltage VROVP - 0.3~6.5 V
Sampling terminal voltage VCS - 0.3~6.5 V
DRAINTerminal voltage VDRAIN - 0.3~500 V
Junction temperature range Tj - 40~150 °C
Storage temperature range TS - 55~150 °C

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 Silan Microelectronics SD670XDmanual
Electrical parameters (unless otherwise specified,VCC=14V,Tamb=25°C)

parameter name symbol Test Conditions minimum Typical value maximum value unit
VCCClamping voltage VCCCLAMP IVCC=0.5mA 14 16 17 V
UVLO VH UVLOH 11.3 12.7 14.1 V
UVLO VL UVLOL 7 8 9 V
Starting current ISTART VCC=10V 50 95 125 μA
Working current IVCC CS=1V 100 175 250 μA
protection current IPRO CS=5V 800 1200 2000 μA
control loop section

CSThe reference voltageNote1 CSREF 388 400 412 mV

CSPeak protection voltage CSPEAK 400 525 650 mV
Control time parameters

Maximum on-time TON,MAX 30 38 47 μs

Leading edge blanking time TLEB 0.45 0.6 0.75 μs
Maximum off time TOFF,MAX 40 52 64 μs
Minimum off time TOFF,MIN 2.5 3.5 4.5 μs
Minimum period TMIN 3.7 5 6.3 μs
ROVPpin voltage VROVP 2 2.4 2.8 V
Built-in high pressureMOSFET

SD6701D -- 7.5 8.6

SD6702D -- 5 5.7
On resistance RDSON VGS=12V, ID=0.1A Ω
SD6703D -- 2.8 3.3
SD6704D -- 1.9 2.5
SD6701D 500 550 --
SD6702D 500 550 --
Drain withstand voltage BVDSS VGS=0V, ID=50uA
SD6703D 500 550 -- V
SD6704D 500 550 --
SD6701D -- -- 1.0
Zero gate voltage SD6702D -- -- 1.0 µA
IDSS VDS=500V, VGS=0V
Drain current SD6703D -- -- 1.0
SD6704D -- -- 1.0
SD6701D -- -- ±100

gate source SD6702D -- -- ±100 nA

IGSS VGS=±30V, VDS=0V
leakage current SD6703D -- -- ±100
SD6704D -- -- ±100
temperature characteristics

superheat regulation TREG 125 140 155 °C

Over temperature protection TSD 135 150 165 °C
Over temperature release TRECOVERY 115 130 145 °C
Note1:CSThe benchmark is under test and will be multiplied by1.1times, i.e. shown in the test data is440mVcenter value, in the range of430mV~450mV.

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 Silan Microelectronics SD670XDmanual
Pin layout

1 GND DRAIN 7

2 NC DRAIN 6

3 ROVP

4 CS VCC 5

Pin description

pin number pin name I/O Function description

1 GND GND land

2 NC / empty feet

3 ROVP I/O Overvoltage protection setting pin, connect an external resistor to ground

4 CS I sampling current

5 VCC POWER power supply

6, 7 DRAIN O Built-in high pressureMOSFETdrain

Function description

SD670XDis a useBUCKNon-isolation based on principleledLighting driver chip with built-in high voltage powerMOSFET. The following is a detailed description of each

function of the chip.

launch control

SD670XDNo auxiliary winding power supply is required. The bus voltage is paired through the start-up resistorVCCCapacitor charging. Therefore, the operating current of the chip needs to be as low as possible, so as to obtain

high conversion efficiency.VCCThe terminal has under-voltage protection function, and the open/close voltage threshold is set at12.7Vand8V. The hysteresis feature ensures that the input capacitor can properly power the chip during

startup.

Constant current precision control

Chip samplingMOSThe tube current, after being processed by a unique sampling technology, enters the internal transconductance amplifier, and performs error amplification with the internal reference voltage, thereby

obtaining high constant current accuracy, high load regulation rate, and high linearity regulation rate.

CSvoltage and400mVThe reference voltage enters the transconductance amplifier for error amplification and is passed through the internalCompCapacitance

integration. IOUT=400mV/2*RCS.

critical conduction mode

SD670XDIt works in critical mode, with strong anti-interference ability and high conversion efficiency. The chip does not need an auxiliary winding to detect the zero-crossing of the inductor current, and the peripheral

application is simple. Due to the existence of the critical mode, part of the resonant energy generated by the peripheral switch terminal will be transferred to theVCC.

Current Sensing and Leading Edge Blanking

The chip has a cycle-by-cycle current limiting protection function. in an abnormal state,CSvoltage will exceed525mVofCSWhen the peak protection voltage occurs, the chip turns off the internal switch M1,

the system still keeps working normally, the next cycle internal switchM1Open normally. The current-limit comparator has no leading edge blanking time.

COMPComparator comparisonCSandCOMPvoltage, whenCSExceedCOMPvoltage, the chip turns off the internal switchM1, the system remains functional. switch on the

insideM1the moment it opens,0.6usThe leading edge blanking time can avoid internal switchingM1false shutdown.

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 Silan Microelectronics SD670XDmanual
CSOpen short circuit protection (also known as maximum output current limit)

onceCSThe resistor is shorted, the inductor current is no longer limited by the current limit,CSThe pin voltage is zero, at this time by detecting the internalOUTThe voltage level of the signal when it is

turned on is used to determine whether to enter theCSResistor shorted state.SD670XSEach series of products has its own settingsOUTlimit voltage, with the high voltage of the closureMOSincrease while internal

OUTThe limit voltage will increase accordingly, so the output current limit can also increase accordingly. Please refer to the application note for the maximum output current limit of each series of products.

source drive

The chip adopts source drive technology, and seals high-voltage power tubes.M2The gate is connected through a certain resistanceVCC, the source is connected to the internal switchM1drain. The chip drives the internal

switchM1the gate, due toM1The gate capacitance is small, and the source drive technology effectively reduces the chip operating current, so that no auxiliary winding is needed to supply power.

Output open and short circuit protection

Since there is no signal directly reflecting the output, the chip detects whether the discharge time is abnormal to determine whether the output is overvoltage. The output overvoltage protection point can be passed through

ROVPpin settings.ROVPThe pin must be connected with a resistor to ground. For specific resistance selection and how to use it, see the application documentation.

After the output is short-circuited, if the internal chip turn-off time exceedsTOFF,MAXdoes not cross zero and continues16After the cycle, the circuit enters the protection state.

Built-in temperature adjustment function

The internal temperature adjustment function is set. When the chip temperature exceeds a certain point, the output current will gradually decrease.

Typical Application Circuit Diagram

AC
INPUT

SD670XD

5 VCC CS 4

ROVP 3

6 DRAIN NC 2

7 DRAIN GND 1

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 Silan Microelectronics SD670XDmanual
Package Outline Drawing

DIP-7-300-2.54 UNIT: mm

0.25±0.05
6.35±0.25

7.62
+ 0.3
1.52 -0 3.30+0 . 1
- 0.3
15 degree

9.25±0.25
4.10MAX

0.5MIN
3.00MIN

+ 0.35
2.54 0.89 -0.30
0.46±0.08

Notice!
Electrostatic sensitive device

operateESDSproduct should take

Protective measures

MOSCircuit Operation Notes:

Static electricity can be generated in many places. Taking the following precautions can effectively preventMOSDamage to circuits due to electrostatic discharge:

- Operators should be grounded through an anti-static wrist strap.

- The equipment enclosure must be grounded.

- Tools used during assembly must be grounded.

- It must be packaged or shipped in conductive packaging or antistatic material.

statement:

- Silan reserves the right to change the instructions without prior notice! Customers should obtain the latest version of the information before placing an order, and verify that the relevant information is complete and up-to-date.

- Any semiconductor product has a certain possibility of failure or failure under specific conditions, and the buyer is responsible for usingSilanThe product shall comply with safety standards and take safety

measures during system design and complete machine manufacturing to avoid potential failure risks that may cause personal injury or property damage! There is no end to product improvement, our

- company will wholeheartedly provide customers with better products!

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 Silan Microelectronics SD670XDmanual

product name: SD670XD Document Type: manual

copyright: Hangzhou Silan Microelectronics Co., Ltd. Company's main page: http: //www.silan.com.cn

Version Book: 1.0 do By: Yao Feng

Modification record:

1. Official release version

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