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Tic226 Bourns
Tic226 Bourns
Tic226 Bourns
SILICON TRIACS
G 3
This series is currently available, Pin 2 is in electrical contact with the mounting base.
but not recommended for new MDC2ACA
designs.
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
TIC226D 400
TIC226M 600
Repetitive peak off-state voltage (see Note 1) VDRM V
TIC226S 700
TIC226N 800
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) IT(RMS) 8 A
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3) ITSM 70 A
Peak gate current IGM ±1 A
Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 μs) PGM 2.2 W
Average gate power dissipation at (or below) 85°C case temperature (see Note 4) PG(AV) 0.9 W
Operating case temperature range TC -40 to +110 °C
Storage temperature range Tstg -40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds TL 230 °C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 320 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for a maximum averaging time of 20 ms.
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1.8 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
TYPICAL CHARACTERISTICS
- - - -
- + - +
100
10
1 0·1
-60 -40 -20 0 20 40 60 80 100 120 -60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C TC - Case Temperature - °C
Figure 1. Figure 2.
APRIL 1971 - REVISED SEPTEMBER 2002
2 Specifications are subject to change without notice.
TIC226 SERIES
SILICON TRIACS
TYPICAL CHARACTERISTICS
IL - Latching Current - mA
IH - Holding Current - mA
100 - +
100
10
10
1
0·1 1
-60 -40 -20 0 20 40 60 80 100 120 -60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C TC - Case Temperature - °C
Figure 3. Figure 4.
THERMAL INFORMATION
9 TJ = 110 °C
IT(RMS) - Maximum On-State Current - A
28
Conduction Angle = 360 °
8 Above 8 A rms
24 See ITSM Figure
7
20
6
5 16
4
12
3
8
2
4
1
0 0
0 25 50 75 100 125 0 2 4 6 8 10 12 14 16
TC - Case Temperature - °C IT(RMS) - RMS On-State Current - A
Figure 5. Figure 6.
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIC226 SERIES
SILICON TRIACS
VAC
VAC
L1
ITRM
IMT2
IMT2
C1
VMT2
VDRM
50 Hz
DUT
RG
See
R1 Note A VMT2
10%
IG dv/dt
63%
IG
NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed
so that the off-state-voltage duration is approximately 800 µs.
PMC2AA
Figure 7.
APRIL 1971 - REVISED SEPTEMBER 2002
4 Specifications are subject to change without notice.