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Lec2 4th
Lec2 4th
Photons
Diode current
5
BV
3 AA((eeBV --11))
Diode Amps
– External circuit
A(e BV - 1) V (e.g., battery,
Isc
+ lights)
I
0
0.0 Diode Volts 0.6
BV
I = I sc - A(e - 1)
Photons’ Journey into Electricity
• Atom’s energy model:
Conduction Conduction
band band
Electron Energy
Electron Energy
Eg (partially filled) Eg (Empty at T =
Forbidden band 0K)
Filled band Forbidden band
Gap Gap
Filled band Filled band
semiconductors
Metals
• Photons energy is quantized. The energy of a photon with a wavelength of λ (or a
frequency of υ) is
hc
E = h =
5
6
Photons’ Journey into Electricity
• Ideal radiation of energy is described by the black body radiation.
• Black bodies radiate energy at different wavelengths as indicated by
3.74 10 8
E =
14400
e
5 T
- 1
E = A T 4
Photons’ Journey into Electricity
• The incident power has 3 components depending on the final photons path.
Diffuse radiation
Direct-beam radiation
Reflected radiation
Photons’ Journey into Electricity
• Direct-beam radiation:
• The extraterrestrial solar insolation is given by
360n
I 0 = (SC) 1 + 0.034cos (W/m 2 )
365
This is the solar insolation before entering the Earth’s atmosphere. In the
equation, SC is the solar constant an equals 1.37 kW/m2 and n is the day number
(January 1 is day #1). The day number takes into consideration that the Earth-Sun
distance changes through the year.
• Sun’s position in the sky throughout the day and during an entire year.
20
30 3 PM
40 Sep
50
60
70 Dec
80
90
Sun Chart for 40 degrees N Latitude
Site Selection – Tilt Angle
Max performance is
achieved when panels
are perpendicular to the
sun’s rays
Active:
Passive:
• The direct-beam insolation IBC depends on the PV module orientation with respect
to the sun. If the PV module is fixed, this insolation will change in a deterministic way
throughout the day and the year:
if the incident angle θ is given by
cos = cos cos( S - C )sin + sin cos
• Assuming that the diffuse radiation does not depends on the sun’s position in a clear
sky, then it is modeled using the following equation:\
1 + cos
I DC = CI B
2
where C is the sky diffuse factor which can be obtained from ASHRAE. This is another
deterministic value.
• Whenever a photon with enough energy hits an atom, an electron may jump the
energy gap into the conduction band. Once in the conduction band, the electron is free
to move in an electric circuit.
• If the circuit is open or if the load requires less current (charge per time) than the one
being produced, the free electrons will eventually decay again.
• Since it is assumed a continuous slow varying incident solar energy, electrons are
freed at a constant rate. Hence, a constant voltage is produced.
PV Cells Technologies
• Characterization criterion:
• Thickness:
• Conventional – thick cells (200 - 500 μm)
• Thin film (1 – 10 μm). Tend to be less costly than conventional (thick) cells
but they also tend to be less reliable and efficient.
• Crystalline configuration:
• Single crystal
• Multicrystalline: cell formed by 1mm to 10cm single crystal areas.
• Polycrystalline: cell formed by 1μm to 1mm single crystal areas.
• Microcrystalline: cell formed by areas of less than 1μm across.
• Amorphous: No single crystal areas.
Maximum
Im
power point
Pmax = Vm I m
27
0
V
0 Vm Voc
• 36 Cells in Series Make a 12V-Class Panel (Voc
19V)
9 cells x 4 cells is a
common configuration
•Two 12V-Class Panels in Series Make a 24V-Class
Array (Voc 38V)
I-V Curve
Isc
(
I (V ) = 5.34 - 0.00524 e 0.1777V - 1 )
PV Station 13, Bright Sun, Dec. 6, 2002
6
Pmax at approx.
Isc 5
30V
4
Pmax 0.7 • Voc •
I - amps
3 Isc
2
0
0 5 10 15 20 25 30 35 40 45
V(panel) - volts
Voc
The PVMaximum Power Point
Station 13, Bright Sun, Dec. 6, 2002
140.0
Pmax
120.0
100.0
P(panel) - watts
80.0
60.0
40.0
20.0
P=0 at short circuit 30
P=0 at open circuit
0.0
0 5 10 15 20 25 30 35 40 45
V(panel) - volts
n-type qVkTd
substrate Bias I d = I 0 e - 1
p-type voltage
substrate Id
• Vd is the diode voltage
• I0 is the reverse saturation current Ideal diode
caused by thermally generated carriers Real
• At 25 C: diode
0.026
Vd
I
Id = I0 e - 1 0
PV Cells physics
Same curve
The bias
p-n
source ISC junction is
(voltage Reverse v-i
equivalent
source) is curve for
to a diode
replaced by a the diode
current
PV Cell steady state characteristic
qVkTd
I PV = I SC - I d = I SC - I 0 e - 1
• The open circuit voltage is
Maximum power
kT I SC
VOC = V ( I PV = 0) = ln + 1 point
q I0 Power
P = I PV VPV
3
PV Cell steady state characteristic
qV d
+ + I PV = I SC - I 0 e - 1
kT
R V = IRS
ISC VdS V where
Vd = V+IRS
- -
This is a transcendental
equation
PV more complex steady-state model
• Both effects can be combined to obtain the more realistic (and complex) steady state
model:
+ +
R
S
ISC R Vd V
p
- -
qVkTd Vd
I PV = I SC - I 0 e - 1 -
Rp
where
Vd = V+IRS
This is a
transcendental
equation
Dynamic effects
Capacitive
effect
•One undesirable effect of the capacitance is that it makes PV cells more susceptible to
indirect atmospheric discharges.
Modules combination
• PV cells are combined to form modules (panels). Modules may be combined to form
arrays.
-
Bypass diode
• Bypass diodes can mitigate the effects of shadows but they don’t solve the issue
completely.
• A better solution will be presented when discussing power electronics interfaces.
No
shade
Shaded Shaded with
without bypass
bypass diode diode