National Institute of Technology, Hamirpur (H®) Name of Examination: B.Tech, Dual Degree Mid Semester Examination, 10" October, 2020 Branch: ECE ( B Tech, Dual Degree) ‘Semester: 7* Subject: MEMS and Sensor Design Subject Code: EC-677 Time: 1.5 Hours ‘Maximum Marks: 30 Note: Attempt all questions (There are 4 questions in the paper} (G1 Figure (1) shows an electrostatic actuator. There is an air gap of 3 um between the sicon oxide layer and ‘cantiever structure ((ealized in aluminum meta). Stating with @ p-ype Si wafer (not shown in the figure (1), ‘describe your process sequence to fabricate the device shown in Figure (1). Aso, sketch the cross-sections and top view of the device afer each Ithography step. How many lithography steps will be requred for this process ‘sequence? List each one and describe ther purposes. 7m ued le sate Fp er Figure : (1) iw |@-2{a) You are using KOH to define a hole in @ 400 um thick (100) wafer as S103 } shown i the Figure (2). What minum rckness of Si is needed to provide { ‘a mask for KOH ethng? The etch rat fr Sip and Sis 60 me, 24.7 ume SUPRA 44 eeoeeceeee eee respectively. What sizeof the opening () woud you need on the top ofthe water? Figure: (2) ‘@2(b) what wil be the value of etch bias (B) forthe case of complete isotropic etching and compete anisotropic ‘etching mm) @3 Consider a CZ cysal roning process: 13 (a) A boron doped crystal is required to have a resistivity of 25.0 cm approximately when 50% ofthe crystal is 4gronn, i, halfvay down the ingot fom the top or seed end. Assuming that a 100 kg charge of pure slicon is used ‘and neglecing any slicon added to the melt by the seed, what isthe requred intial concentration of boron in te melt? Assume thatthe melt is well sted, the dstibution coefcient for boron is 0.72, and that the hole mobity is 480 cmvosec and the electron mobility = 1260 enV sec. Note [0 = 1! qu fr a n-type semiconductor] '3(b) If an unknown dopant has the same concentration as boron at the top ofthe ingot, but the concentration is 46.5% higher when 50% ofthe crystal is grown, ie, halfway down the ingot, then assuming rapid string condtions, what the segregation coefficient forthe unknown dopant? (7)‘4 (a) Explain the pressure sensor based on piezoresistve effect. (Draw the neat cross-sectional view of the device). (3m) ‘Q-4(b) Write short note on Surtace Micromachining and Bulk Micromachining. [3m] @-4(c\Define the terms sensors and actuators and also ciscuss 1 example of MEMS technology based actuator [3M] End of Question Paper™*