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LT 3800
LT 3800
LT 3800
High-Voltage Synchronous
Current Mode Step-Down
Controller U
FEATURES DESCRIPTIO
■ Wide 4V to 60V Input Voltage Range The LT®3800 is a 200kHz fixed frequency high voltage
■ Output Voltages up to 36V synchronous current mode step-down switching regula-
■ Adaptive Nonoverlap Circuitry Prevents Switch tor controller. The IC drives standard gate N-channel power
Shoot-Through MOSFETs and can operate with input voltages from 4V to
■ Reverse Inductor Current Inhibit for Discontinuous 60V. An onboard regulator provides IC power directly from
Operation Improves Efficiency with Light Loads VIN and provides for output-derived power to minimize VIN
■ Output Slew Rate Controlled Soft-Start with quiescent current. MOSFET drivers employ an internal
Auto-Reset dynamic bootstrap feature, maximizing gate-source “ON”
■ 100µA No Load Quiescent Current voltages during normal operation for improved operating
■ Low 10µA Current Shutdown efficiencies. The LT3800 incorporates Burst Mode® opera-
■ 1% Regulation Accuracy tion, which reduces no load quiescent current to under
■ 200kHz Operating Frequency 100µA. Light load efficiencies are also improved through
■ Standard Gate N-Channel Power MOSFETs a reverse inductor current inhibit, allowing the controller
■ Current Limit Unaffected by Duty Cycle to support discontinuous operation. Both Burst Mode
■ Reverse Overcurrent Protection operation and the reverse-current inhibit features can be
■ 16-Lead Thermally Enhanced TSSOP Package disabled if desired. The LT3800 incorporates a program-
U mable soft-start that directly controls the voltage slew rate
APPLICATIO S of the converter output for reduced startup surge currents
■
and overshoot errors. The LT3800 is available in a 16-lead
12V and 42V Automotive and Heavy Equipment
■
thermally enhanced TSSOP package.
48V Telecom Power Supplies
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
■ Avionics and Industrial Control Systems Burst Mode is a registered trademark of Linear Technology Corporation.
■ All other trademarks are the property of their respective owners.
Distributed Power Converters Protected by U.S. Patents, including 5481178, 6611131, 6304066, 6498466, 6580258.
U
TYPICAL APPLICATIO
12V 75W DC/DC Converter with Reverse Current Inhibit and Input UVLO
VIN
20V TO 55V
+ 56µF 1µF Efficiency and Power Loss
×2 ×3
VIN BOOST
100 6
1µF
1M TG Si7850DP VIN = 24V
82.5k LT3800 95 VIN = 36V 5
SHDN SW
1.5nF VIN = 60V
200k BAS19
POWER LOSS (W)
90 4
EFFICIENCY (%)
CSS
15µH VIN = 48V
174k 1N4148 85 3
20k BURST_EN VCC
1%
1% 1µF
VFB BG Si7370DP B160 80 2
LOSS (48V)
VC PGND
75 1
100pF 82.5k
SENSE– SENSE+
SGND 70 0
680pF 0.015Ω 0.1 1 10
VOUT ILOAD (A)
12V AT 75W
+ 3800 TA01b
10µF 270µF
3800 TA01a
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LT3800
W W W U U U U
ABSOLUTE AXI U RATI GS (Note 1) PI CO FIGURATIO
Supply Voltages
Input Supply Pin (VIN) .............................. –0.3V to 65V TOP VIEW
U W U
ORDER I FOR ATIO
LEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE
LT3800EFE#PBF LT3800EFE#TRPBF 3800EFE 16-Lead Plastic TSSOP –40°C to 125°C
LT3800IFE#PBF LT3800IFE#TRPBF 3800IFE 16-Lead Plastic TSSOP –40°C to 125°C
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Consult LTC Marketing for information on nonstandard lead based finish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VIN = 20V, VCC = BOOST = BURST_EN = 10V, SHDN = 2V,
SENSE – = SENSE+ = 10V, SGND = PGND = SW = 0V, CTG = CBG = 3300pF, unless otherwise noted.
2
LT3800
ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VIN = 20V, VCC = BOOST = BURST_EN = 10V, SHDN = 2V,
SENSE – = SENSE+ = 10V, SGND = PGND = SW = 0V, CTG = CBG = 3300pF, unless otherwise noted.
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LT3800
ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings Note 4: VIN voltages below the start-up threshold (7.5V) are only
may cause permanent damage to the device. Exposure to any Absolute supported when VCC is externally driven above 6.5V.
Maximum Rating condition for extended periods may affect device Note 5: Operating range dictated by MOSFET absolute maximum gate-
reliability and lifetime. source voltage ratings.
Note 2: This IC includes overtemperature protection that is intended to Note 6: Supply current specification does not include switch drive
protect the device during momentary overload conditions. Junction currents. Actual supply currents will be higher.
temperature will exceed 125°C when overtemperature protection is active. Note 7: DC measurement of gate drive output “ON” voltage is typically
Continuous operation above the specified maximum operating junction 8.6V. Internal dynamic bootstrap operation yields typical gate “ON”
temperature may impair device reliability. voltages of 9.8V during standard switching operation. Standard operation
Note 3: The LT3800E is guaranteed to meet performance specifications from gate “ON” voltage is not tested but guaranteed by design.
0°C to 125°C junction temperature. Specifications over the –40°C to 125°C
operating junction temperature range are assured by design, characterization
and correlation with statistical process controls. The LT3800I is guaranteed
over the full –40°C to 125°C operating junction temperature range.
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Shutdown Threshold (Rising) Shutdown Threshold (Falling)
vs Temperature vs Temperature VCC vs Temperature
1.37 1.240 8.1
SHUTDOWN THRESHOLD, FALLING (V)
SHUTDOWN THRESHOLD, RISING (V)
ICC = 0mA
1.36 1.235
8.0
VCC (V)
1.35 1.230 ICC = 20mA
7.9
1.34 1.225
8.00
150
6
VCC (V)
VCC (V)
7.95 125
5
100
7.90
4
75
7.85 3 50
0 5 10 15 20 25 30 35 40 4 5 6 7 8 9 10 11 12 –50 –25 0 25 50 75 100 125
ICC(LOAD) (mA) VIN (V) TEMPERATURE (°C)
3800 G04 3800 G05 3800 G06
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LT3800
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TYPICAL PERFOR A CE CHARACTERISTICS
VCC UVLO Threshold (Rising) Error Amp Transconductance
vs Temperature ICC vs VCC (SHDN = 0V) vs Temperature
6.30 25 380
TA = 25°C
20
6.25 360
15
ICC (µA)
10
6.20 340
6.15 0 320
–50 –25 0 25 50 75 100 125 0 2 4 6 8 10 12 14 16 18 20 –50 –25 0 25 50 75 100 125
TEMPERATURE (°C) VCC (V) TEMPERATURE (°C)
3800 G07 3800 G12 3800 G08
600
OPERATING FREQUENCY (kHz)
1.231
400
1.230
200 200
1.229
0
190
1.228
–200
U U U
PI FU CTIO S
VIN (Pin 1): Converter Input Supply. CSS (Pin 4): Soft-Start AC Coupling Capacitor Input.
NC (Pin 2): No Connection. Connect capacitor (CSS) in series with a 200k resistor from
pin to converter output (VOUT). Controls converter start-
SHDN (Pin 3): Precision Shutdown Pin. Enable threshold up output voltage slew rate (∆VOUT/∆t). Slew rate corre-
is 1.35V (rising) with 120mV of input hysteresis. When in sponds to 2µA average current through the soft-start
shutdown mode, all internal IC functions are disabled. The coupling capacitor. The capacitor value for a desired
precision threshold allows use of the SHDN pin to incor- output startup slew rate follows the relation:
porate UVLO functions. If the SHDN pin is pulled below
0.7V, the IC enters a low current shutdown mode with CSS = 2µA/(∆VOUT/∆t)
IVIN < 10µA. In low-current shutdown, the IC will sink 20µA Shorting this pin to SGND disables the soft-start function
from the VCC pin until that local supply has collapsed.
BURST_EN (Pin 5): Burst Mode Operation Enable Pin.
Typical pin input bias current is <10nA and the pin is
This pin also controls reverse-inhibit mode of operation.
internally clamped to 6V.
When the pin voltage is below 0.5V, Burst Mode operation
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LT3800
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PI FU CTIO S
and reverse-current inhibit functions are enabled. When clamp on the VC pin is set at 100mV below the burst
the pin voltage is above 0.5V, Burst Mode operation is threshold, which limits the negative excursion of the pin
disabled, but reverse-current inhibit operation is main- voltage. Therefore, this pin cannot be pulled low with a
tained. DC/DC converters operating with reverse-current low-impedance source. If the VC pin must be externally
inhibit operation (BURST_EN = VFB) have a 1mA minimum manipulated, do so through a 1kΩ series resistance.
load requirement. Reverse-current inhibit is disabled when
SENSE– (Pin 8): Negative Input for Current Sense Ampli-
the pin voltage is above 2.5V. This pin is typically shorted fier. Sensed inductor current limit set at ±150mV across
to ground to enable Burst Mode operation and reverse- SENSE inputs.
current inhibit, shorted to VFB to disable Burst Mode
operation while enabling reverse-current inhibit, and con- SENSE+ (Pin 9): Positive Input for Current Sense Ampli-
nected to VCC pin to disable both functions. See Applica- fier. Sensed inductor current limit set at ±150mV across
tions Information section. SENSE inputs.
V FB (Pin 6): Error Amplifier Inverting Input. The PGND (Pin 10): High Current Ground Reference for Syn-
noninverting input of the error amplifier is connected to an chronous Switch. Current path from pin to negative termi-
internal 1.231V reference. Desired converter output volt- nal of VCC decoupling capacitor must not corrupt SGND.
age (VOUT) is programmed by connecting a resistive BG (Pin 11): Synchronous Switch Gate Drive Output.
divider from the converter output to the VFB pin. Values for
the resistor connected from VOUT to VFB (R2) and the VCC (Pin 12): Internal Regulator Output. Most IC func-
resistor connected from VFB to ground (R1) can be calcu- tions are powered from this pin. Driving this pin from an
lated via the following relationship: external source reduces VIN pin current to 20µA. This pin
is decoupled with a low ESR 1µF capacitor to PGND.
⎛V ⎞ In shutdown mode, this pin sinks 20µA until the pin
R2 = R1 • ⎜ OUT – 1⎟
⎝ 1.231 ⎠ voltage is discharged to 0V. See Typical Performance
Characteristics.
The VFB pin input bias current is 25nA, so use of extremely
high value feedback resistors could cause a converter NC (Pin 13): No Connection.
output that is slightly higher than expected. Bias current SW (Pin 14): Reference for VBOOST Supply and High
error at the output can be estimated as: Current Return for Bootstrapped Switch.
∆VOUT(BIAS) = 25nA • R2 TG (Pin 15): Bootstrapped Switch Gate Drive Output.
VC (Pin 7): Error Amplifier Output. The voltage on the VC BOOST (Pin 16): Bootstrapped Supply – Maximum Oper-
pin corresponds to the maximum (peak) switch current ating Voltage (Ground Referred) to 75V. This pin is
per oscillator cycle. The error amplifier is typically config- decoupled with a low ESR 1µF capacitor to pin SW. The
ured as an integrator by connecting an RC network from voltage on the decoupling capacitor is refreshed through
this pin to ground. This network creates the dominant pole a rectifier from either VCC or an external source.
for the converter voltage regulation feedback loop. Spe-
cific integrator characteristics can be configured to opti- Exposed Package Backside (SGND) (Pin 17): Low Noise
mize transient response. Connecting a 100pF or greater Ground Reference. SGND connection is made through the
high frequency bypass capacitor from this pin to ground exposed lead frame on back of TSSOP package which
is also recommended. When Burst Mode operation is must be soldered to the PCB ground.
enabled (see Pin 5 description), an internal low impedance
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LT3800
U U W
FU CTIO AL DIAGRA
VIN
UVLO
(<4V)
FEEDBACK
REFERENCE 14 SW
– + 1.231V
NOL
SWITCH
DRIVE
LOGIC
CONTROL
12 VCC
+
SHDN 3 SYNCHRONOUS
SWITCH DRIVER
DRIVE
11 BG
– CONTROL
10 PGND
+
BURST_EN 5
OSCILLATOR
+
Q S
VFB 6 –
– + R SLOPE COMP
ERROR gm GENERATOR Q R
0.5V
AMP CURRENT
– SENSE
VC 7 COMPARATOR S
SOFT-START +
DISABLE/BURST – +
ENABLE REVERSE
CURRENT
+ 1V
INHIBIT
– – +
Burst Mode
1.185V OPERATION
2µA 160mV
CSS 4
–
9 SENSE+
+ 10mV
GND 17 8 SENSE–
3800 FD
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LT3800
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APPLICATIO S I FOR ATIO
Overview threshold is not obtained for the entire oscillator cycle, the
switch driver is disabled at the end of the cycle for 450ns.
The LT3800 is a high input voltage range step-down
This minimum off-time mode of operation assures regen-
synchronous DC/DC converter controller IC that uses a
eration of the BOOST bootstrapped supply.
200kHz constant frequency, current mode architecture
with external N-channel MOSFET switches. Power Requirements
The LT3800 has provisions for high efficiency, low load The LT3800 is biased using a local linear regulator to
operation for battery-powered applications. Burst Mode generate internal operational voltages from the VIN pin.
operation reduces total average input quiescent currents Virtually all of the circuitry in the LT3800 is biased via an
to 100µA during no load conditions. A low current shutdown internal linear regulator output (VCC). This pin is decoupled
mode can also be activated, reducing quiescent current to with a low ESR 1µF capacitor to PGND.
<10µA. Burst Mode operation can be disabled if desired.
The VCC regulator generates an 8V output provided there
The LT3800 also employs a reverse-current inhibit fea- is ample voltage on the VIN pin. The VCC regulator has
ture, allowing increased efficiencies during light loads
approximately 1V of dropout, and will follow the VIN pin
through nonsynchronous operation. This feature disables
with voltages below the dropout threshold.
the synchronous switch if inductor current approaches
zero. If full time synchronous operation is desired, this The LT3800 has a start-up requirement of VIN > 7.5V. This
feature can be disabled. assures that the onboard regulator has ample headroom
to bring the VCC pin above its UVLO threshold. The VCC
Much of the LT3800’s internal circuitry is biased from an
regulator can only source current, so forcing the VCC pin
internal linear regulator. The output of this regulator is the
above its 8V regulated voltage allows use of externally
VCC pin, allowing bypassing of the internal regulator. The
derived power for the IC, minimizing power dissipation in
associated internal circuitry can be powered from the
the IC. Using the onboard regulator for start-up, then
output of the converter, increasing overall converter effi-
deriving power for VCC from the converter output maxi-
ciency. Using externally derived power also eliminates the
mizes conversion efficiencies and is common practice. If
IC’s power dissipation associated with the internal VIN to
VCC is maintained above 6.5V using an external source, the
VCC regulator. LT3800 can continue to operate with VIN as low as 4V.
Theory of Operation (See Block Diagram) The LT3800 operates with 3mA quiescent current from the
VCC supply. This current is a fraction of the actual VCC
The LT3800 senses converter output voltage via the VFB
pin. The difference between the voltage on this pin and an quiescent currents during normal operation. Additional
internal 1.231V reference is amplified to generate an error current is produced from the MOSFET switching currents
voltage on the VC pin which is, in turn, used as a threshold for both the boosted and synchronous switches and are
for the current sense comparator. typically derived from the VCC supply.
Because the LT3800 uses a linear regulator to generate
During normal operation, the LT3800 internal oscillator
VCC, power dissipation can become a concern with high
runs at 200kHz. At the beginning of each oscillator cycle,
VIN voltages. Gate drive currents are typically in the range
the switch drive is enabled. The switch drive stays enabled
of 5mA to 15mA per MOSFET, so gate drive currents can
until the sensed switch current exceeds the VC derived
threshold for the current sense comparator and, in turn, create substantial power dissipation. It is advisable to
disables the switch driver. If the current comparator derive VCC and VBOOST power from an external source
whenever possible.
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LT3800
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APPLICATIO S I FOR ATIO
The onboard VCC regulator will provide gate drive power for Charge Pump Doubler
start-up under all conditions with total MOSFET gate charge VOUT
loads up to 180nC. The regulator can operate the LT3800 B0520 B0520
50
B0520 1µF
VIN (V)
40
VCC
1µF
Si1555DL Si1555DL
30
LT3800
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LT3800
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APPLICATIO S I FOR ATIO
Burst Mode During Burst Mode operation, VIN pin current is 20µA and
VCC current is reduced to 80µA. If no external drive is
The LT3800 employs low current Burst Mode functionality
provided for VCC, all VCC bias currents originate from the
to maximize efficiency during no load and low load condi-
VIN pin, giving a total VIN current of 100µA. Burst current
tions. Burst Mode operation is enabled by shorting the
can be reduced further when VCC is driven using an output
BURST_EN pin to SGND. Burst Mode operation can be
derived source, as the VCC component of VIN current is
disabled by shorting BURST_EN to either VFB or VCC.
then reduced by the converter buck ratio.
When the required switch current, sensed via the VC pin
Reverse-Current Inhibit
voltage, is below 15% of maximum, the Burst Mode
operation is employed and that level of sense current is The LT3800 contains a reverse-current inhibit feature to
latched onto the IC control path. If the output load requires maximize efficiency during light load conditions. This
less than this latched current level, the converter will mode of operation allows discontinuous operation, and is
overdrive the output slightly during each switch cycle. sometimes referred to as “pulse-skipping” mode. Refer to
This overdrive condition is sensed internally and forces Figure 2.
the voltage on the VC pin to continue to drop. When the This feature is enabled with Burst Mode operation, and can
voltage on VC drops 150mV below the 15% load level, also be enabled while Burst Mode operation is disabled by
switching is disabled and the LT3800 shuts down most of shorting the BURST_EN pin to VFB.
its internal circuitry, reducing total quiescent current to
100µA. When the converter output begins to fall, the VC pin When reverse-current inhibit is enabled, the LT3800 sense
voltage begins to climb. When the voltage on the VC pin amplifier detects inductor currents approaching zero and
climbs back to the 15% load level, the IC returns to normal disables the synchronous switch for the remainder of the
operation and switching resumes. An internal clamp on switch cycle. If the inductor current is allowed to go
the VC pin is set at 100mV below the switch disable negative before the synchronous switch is disabled, the
threshold, which limits the negative excursion of the pin switch node could inductively kick positive with a high
voltage, minimizing the converter output ripple during dv/dt. The LT3800 prevents this by incorporating a 10mV
Burst Mode operation. positive offset at the sense inputs.
DECREASING
LOAD
CURRENT
3800 F02
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LT3800
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APPLICATIO S I FOR ATIO
With the reverse-current inhibit feature enabled, an LT3800 corresponds to 2µA average current during the soft-start
converter will operate much like a nonsynchronous interval. This capacitor value follows the relation:
converter during light loads. Reverse-current inhibit re-
2E –6 • tSS
duces resistive losses associated with inductor ripple CSS1 =
currents, which improves operating efficiencies during VOUT
light-load conditions. RSS is typically set to 200k for most applications.
An LT3800 DC/DC converter that is operating in reverse-
inhibit mode has a minimum load requirement of 1mA CSS1
RSS LT3800
A
(BURST_EN = VFB). Since most applications use output- VOUT CSS
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LT3800
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APPLICATIO S I FOR ATIO
Soft-Start Characteristic Showing Excessive Ripple Component Desirable Soft-Start Characteristic
VOUT VOUT
VOUT(SS) VOUT(SS)
V(VC) V(VC)
The soft-start cycle should be evaluated to verify that the Inductor current typically doesn’t reach IMAX in the few
reduced RSS value allows operation without excessive cycles that occur before soft-start becomes active, but can
modulation of the VC pin before finalizing the design. with high input voltages or small inductors, so the above
relation is useful as a worst-case scenario.
If the VC pin has an excessive ripple component during the
soft-start cycle, converter output ripple should be reduced This energy transfer increase in output voltage is typically
or RSS increased. Reduction in converter output ripple is small, but for some low voltage applications with relatively
typically accomplished by increasing output capacitance small output capacitors, it can become significant. The
and/or reducing output capacitor ESR. voltage rise can be reduced by increasing output capaci-
tance, which puts additional limitations on COUT for these
External Current Limit Foldback Circuit low voltage supplies. Another approach is to add an
An additional start-up voltage offset can occur during the external current limit foldback circuit which reduces the
period before the LT3800 soft-start circuit becomes ac- value of IMAX during start-up.
tive. Before the soft-start circuit throttles back the VC pin An external current limit foldback circuit can be easily
in response to the rising output voltage, current as high as incorporated into an LT3800 DC/DC converter application
the peak programmed current limit (IMAX) can flow in the by placing a 1N4148 diode and a 47k resistor from the
inductor. Switching will stop once the soft-start circuit converter output (VOUT) to the LT3800’s VC pin. This limits
takes hold and reduces the voltage on the VC pin, but the the peak current to 0.25 • IMAX when VOUT = 0V. A current
output voltage will continue to increase as the stored limit foldback circuit also has the added advantage of
energy in the inductor is transferred to the output capaci- providing a reduced output current in the DC/DC converter
tor. With IMAX flowing in the inductor, the resulting lead- during short-circuit fault conditions, so a foldback circuit
ing-edge rise on VOUT due to energy stored in the inductor may be useful even if the soft-start function is disabled.
follows the relationship:
If the soft-start circuit is disabled by shorting the CSS pin
1/ 2 to ground, the external current limit fold-back circuit must
⎛ L ⎞
∆VOUT = IMAX • ⎜ ⎟ be modified by adding an additional diode and resistor.
⎝ COUT ⎠ The 2-diode, 2-resistor network shown also provides
0.25 • IMAX when VOUT = 0V.
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LT3800
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APPLICATIO S I FOR ATIO
Current Limit Foldback Circuit for Alternative Current Limit Foldback Circuit for Applications That
Applications That Use Soft-Start Have Soft-Start Disabled
VC VC
1N4148
1N4148
1N4148
47k 39k
27k
VOUT
VOUT 3800 AI09
3800 AI10
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LT3800
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Programming LT3800 VIN UVLO Inductor Selection
VIN
The primary criterion for inductor value selection in LT3800
applications is ripple current created in that inductor.
LT3800
RB Basic design considerations for ripple current are output
3
SHDN voltage ripple, and the ability of the internal slope compen-
sation waveform to prevent current mode instability. Once
RA
SGND the value is determined, an inductor must also have a
17 3800 AI02
saturation current equal to or exceeding the maximum
peak current in the inductor.
Ripple current (∆IL) in an inductor for a given value (L) can
The UVLO voltage, VIN(UVLO), is set using the following be approximated using the relation:
relation:
⎛ V ⎞ V
VIN(UVLO) – 1.35V ∆IL = ⎜ 1– OUT ⎟ • OUT
RA = RB • ⎝ VIN ⎠ fO • L
1.35V
The typical range of values for ∆I is 20% to 40% of
If additional hysteresis is desired for the enable function,
IOUT(MAX), where IOUT(MAX) is the maximum converter
an external positive feedback resistor can be used from the
output load current. Ripple currents in this range typically
LT3800 regulator output.
yield a good design compromise between inductor perfor-
The shutdown function can be disabled by connecting the mance versus inductor size and cost, and values in this
SHDN pin to VIN through a large value pull-up resistor. range are generally a good starting point. A starting point
This pin contains a low impedance clamp at 6V, so the inductor value can thus be determined using the relation:
SHDN pin will sink current from the pull-up resistor (RPU):
⎛ VOUT ⎞
V – 6V ⎜ 1– ⎟
ISHDN = IN ⎝ VIN ⎠
RPU L = VOUT •
fO • 0.3 • IOUT(MAX)
Because this arrangement will pull the SHDN pin to the 6V
clamp voltage, it will violate the 5V absolute maximum Use of smaller inductors increase output ripple currents,
voltage rating of the pin. This is permitted, however, as requiring more capacitance on the converter output. Also,
long as the absolute maximum input current rating of 1mA with converter operation with duty cycles greater than
is not exceeded. Input SHDN pin currents of <100µA are 50%, the slope compensation criterion, described later,
recommended; a 1MΩ or greater pull-up resistor is typi- must be met. Designing for smaller ripple currents re-
cally used for this configuration. quires larger inductor values, which can increase con-
verter cost and/or footprint.
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LT3800
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APPLICATIO S I FOR ATIO
Some magnetics vendors specify a volt-second product in duty cycle, to generate an equivalent slope of at least
their data sheet. If they do not, consult the vendor to make 1E5 • ILIMIT A/sec, where ILIMIT is the programmed con-
sure the specification is not being exceeded by your verter current limit. Current limit is programmed by using
design. The required volt-second product is calculated as a sense resistor (RS) such that ILIMIT = 150mV/RS, so the
follows: equation for the minimum inductance to meet the current
mode instability criterion can be reduced to:
VOUT ⎛ V ⎞
Volt - Second ≥ • ⎜ 1 – OUT ⎟ LMIN = (5E–5)(VOUT)(RS)
fO ⎝ VIN ⎠
For example, with VOUT = 5V and RS = 20mΩ:
Magnetics vendors specify either the saturation current,
LMIN = (5E–5)(5)(0.02) = 5µH
the RMS current, or both. When selecting an inductor
based on inductor saturation current, the peak current After calculating the minimum inductance value, the volt-
through the inductor, IOUT(MAX) + (∆I/2), is used. When second product, the saturation current and the RMS
selecting an inductor based on RMS current the maximum current for your design, an off the shelf inductor can be
load current, IOUT(MAX), is used. selected from a magnetics vendor. A list of magnetics
vendors can be found at http://www.linear.com/ezone/
The requirement for avoiding current mode instability is
vlinks or by contacting the Linear Technology Applications
keeping the rising slope of sensed inductor ripple current
department.
(S1) greater than the falling slope (S2). During continuous-
current switcher operation, the rising slope of the current Output Voltage Programming
waveform in the switched inductor is less than the falling
slope when operating at duty cycles (DC) greater than 50%. Output voltage is programmed through a resistor feed-
To avoid the instability condition during this operation, a back network to VFB (Pin 6) on the LT3800. This pin is the
false signal is added to the sensed current, increasing the inverting input of the error amplifier, which is internally
perceived rising slope. To prevent current mode instabil- referenced to 1.231V. The divider is ratioed to provide
ity, the slope of this false signal (Sx) must be sufficient such 1.231V at the VFB pin when the output is at its desired
that the sensed rising slope exceeds the falling slope, or value. The output voltage is thus set following the relation:
S1 + Sx ≥ S2. This leads to the following relations:
⎛V ⎞
Sx ≥ S2 (2DC – 1)/DC R2 = R1 • ⎜ OUT – 1⎟
⎝ 1.231 ⎠
where:
when an external resistor divider is connected to the
S2 ~ VOUT/L output as shown.
Solving for L yields a relation for the minimum inductance
that will satisfy slope compensation requirements: Programming LT3800 Output Voltage
VOUT
2DC – 1
LMIN = VOUT • LT3800
DC • Sx R2
6
VFB
The LT3800 maximizes available dynamic range using a
slope compensation generator that continuously increases R1
SGND
the additional signal slope as duty cycle increases. The 17
slope compensation waveform is calibrated at an 80%
3800 AI03
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15
LT3800
U U W U
APPLICATIO S I FOR ATIO
Power MOSFET Selection IMAIN = (ILOAD)(DC)
External N-channel MOSFET switches are used with the ISYNC = (ILOAD)(1 – DC)
LT3800. The positive gate-source drive voltage of the The RDS(ON) required for a given conduction loss can be
LT3800 for both switches is roughly equivalent to the VCC calculated using the relation:
supply voltage, for use of standard threshold MOSFETs.
PLOSS = ISWITCH2 • RDS(ON)
Selection criteria for the power MOSFETs include the “ON”
resistance (RDS(ON)), total gate charge (QG), reverse transfer In high voltage applications (VIN > 20V), the main switch
capacitance (CRSS), maximum drain-source voltage (VDSS) is required to slew very large voltages. MOSFET transition
and maximum current. losses are proportional to VIN2 and can become the
dominant power loss term in the main switch. This transi-
The power FETs selected must have a maximum operating tion loss takes the form:
VDSS exceeding the maximum VIN. VGS voltage maximum
must exceed the VCC supply voltage. PTR ≈ (k)(VIN)2(ISWITCH)(CRSS)(fO)
Total gate charge (QG) is used to determine the FET gate where k is a constant inversely related to the gate drive
drive currents required. QG increases with applied gate current, approximated by k = 2 in LT3800 applications,
voltage, so the QG for the maximum applied gate voltage and ISWITCH is the converter output current. The power
must be used. A graph of QG vs. VGS is typically provided loss terms for the switches are thus:
in MOSFET datasheets. PMAIN = (DC)(ISWITCH)2(1 + d)(RDS(ON)) +
In a configuration where the LT3800 linear regulator is 2(VIN)2(ISWITCH)(CRSS)(fO)
providing VCC and VBOOST currents, the VCC 8V output
PSYNC = (1 – DC)(ISWITCH)2(1 + d)(RDS(ON))
voltage can be used to determine QG. Required drive
current for a given FET follows the simple relation: The (1 + d) term in the above relations is the temperature
dependency of RDS(ON), typically given in the form of a
IGATE = QG(8V) • fO
normalized RDS(ON) vs Temperature curve in a MOSFET
QG(8V) is the total FET gate charge for VGS = 8V, and f0 = data sheet.
operating frequency. If these currents are externally de-
The CRSS term is typically smaller for higher voltage FETs,
rived by backdriving VCC, use the backfeed voltage to
and it is often advantageous to use a FET with a higher VDS
determine QG. Be aware, however, that even in a backfeed
rating to minimize transition losses at the expense of
configuration, the drive currents for both boosted and
additional RDS(ON) losses.
synchronous FETs are still typically supplied by the LT3800
internal VCC regulator during start-up. The LT3800 can In some applications, parasitic FET capacitances couple
start using FETs with a combined QG(8V) up to 180nC. the negative going switch node transient onto the bottom
gate drive pin of the LT3800, causing a negative voltage in
Once voltage requirements have been determined, RDS(ON)
excess of the Absolute Maximum Rating to be imposed on
can be selected based on allowable power dissipation and
that pin. Connection of a catch Schottky diode from this
required output current.
pin to ground will eliminate this effect. A 1A current rating
In an LT3800 buck converter, the average inductor current is typically sufficient for the diode.
is equal to the DC load current. The average currents
through the main (bootstrapped) and synchronous
(ground-referred) switches are:
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16
LT3800
U U W U
APPLICATIO S I FOR ATIO
Input Capacitor Selection Output Capacitor Selection
The large currents typical of LT3800 applications require The output capacitor in a buck converter generally has
special consideration for the converter input and output much less ripple current than the input capacitor. Peak-to-
supply decoupling capacitors. Under normal steady state peak ripple current is equal to that in the inductor (∆IL),
buck operation, the source current of the main switch typically a fraction of the load current. COUT is selected to
MOSFET is a square wave of duty cycle VOUT/VIN. Most of reduce output voltage ripple to a desirable value given an
this current is provided by the input bypass capacitor. To expected output ripple current. Output ripple (∆VOUT) is
prevent large input voltage transients and avoid bypass approximated by:
capacitor heating, a low ESR input capacitor sized for the
∆VOUT ≈ ∆IL(ESR + [(8)(fO) • COUT]–1)
maximum RMS current must be used. This maximum
capacitor RMS current follows the relation: where fO = operating frequency.
∆VOUT increases with input voltage, so the maximum
1
I MAX ( VOUT ( VIN – VOUT ))
operating input voltage should be used for worst-case
2
IRMS = calculations. Multiple capacitors are often paralleled to
VIN meet ESR requirements. Typically, once the ESR require-
ment is satisfied, the capacitance is adequate for filtering
which peaks at a 50% duty cycle, when IRMS = IMAX/2. and has the required RMS current rating. An additional
The bulk capacitance is calculated based on an acceptable ceramic capacitor in parallel is commonly used to reduce
maximum input ripple voltage, ∆VIN, which follows the the effect of parasitic inductance in the output capacitor,
relation: which reduces high frequency switching noise on the
converter output.
VOUT
VIN Increasing inductance is an option to reduce ESR require-
CIN(BULK) = IOUT(MAX) • ments. For extremely low ∆VOUT, an additional LC filter
∆VIN • fO
stage can be added to the output of the supply. Applica-
∆V is typically on the order of 100mV to 200mV. Alumi- tion Note 44 has information on sizing an additional
num electrolytic capacitors are a good choice for high output LC filter.
voltage, bulk capacitance due to their high capacitance per
unit area. Layout Considerations
The capacitor voltage rating must be rated greater than The LT3800 is typically used in DC/DC converter designs
VIN(MAX). The combination of aluminum electrolytic ca- that involve substantial switching transients. The switch
pacitors and ceramic capacitors is a common approach to drivers on the IC are designed to drive large capacitances
meeting supply input capacitor requirements. Multiple and, as such, generate significant transient currents them-
capacitors are also commonly paralleled to meet size or selves. Careful consideration must be made regarding
height requirements in a design. supply bypass capacitor locations to avoid corrupting the
ground reference used by IC.
Capacitor ripple current ratings are often based on only
2000 hours (three months) lifetime; it is advisable to Typically, high current paths and transients from the input
derate either the ESR or temperature rating of the capaci- supply and any local drive supplies must be kept isolated
tor for increased MTBF of the regulator. from SGND, to which sensitive circuits such as the error
amp reference and the current sense circuits are referred.
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17
LT3800
U U W U
APPLICATIO S I FOR ATIO
Effective grounding can be achieved by considering switch such that current paths in the ground plane do not cross
current in the ground plane, and the return current paths through signal ground areas. Signal ground refers to the
of each respective bypass capacitor. The VIN bypass Exposed Pad on the backside of the LT3800 IC. SGND is
return, VCC bypass return, and the source of the synchro- referenced to the (–) terminal of the VOUT decoupling
nous FET carry PGND currents. SGND originates at the capacitor and is used as the converter voltage feedback
negative terminal of the VOUT bypass capacitor, and is the reference. Power ground currents are controlled on the
small signal reference for the LT3800. LT3800 via the PGND pin, and this ground references the
Don’t be tempted to run small traces to separate ground high current synchronous switch drive components, as
paths. A good ground plane is important as always, but well as the local VCC supply. It is important to keep PGND
and SGND voltages consistent with each other, so sepa-
PGND referred bypass elements must be oriented such
rating these grounds with thin traces is not recommended.
that transient currents in these return paths do not
When the synchronous FET is turned on, gate drive surge
corrupt the SGND reference.
currents return to the LT3800 PGND pin from the FET
During the dead-time between switch conduction, the source. The BOOST supply refresh surge currents also
body diode of the synchronous FET conducts inductor return through this same path. The synchronous FET must
current. Commutating this diode requires a significant be oriented such that these PGND return currents do not
charge contribution from the main switch. At the instant corrupt the SGND reference. Problems caused by the
the body diode commutates, a current discontinuity is PGND return path are generally recognized during heavy
created and parasitic inductance causes the switch node load conditions, and are typically evidenced as multiple
to fly up in response to this discontinuity. High currents switch pulses occurring during a single 5µs switch cycle.
and excessive parasitic inductance can generate extremely This behavior indicates that SGND is being corrupted and
fast dV/dt rise times. This phenomenon can cause grounding should be improved. SGND corruption can
avalanche breakdown in the synchronous FET body di- often be eliminated, however, by adding a small capacitor
ode, significant inductive overshoot on the switch node, (100pF-200pF) across the synchronous switch FET from
and shoot-through currents via parasitic turn-on of the drain to source.
synchronous FET. Layout practices and component ori-
The high di/dt loop formed by the switch MOSFETs and the
entations that minimize parasitic inductance on this node
input capacitor (CIN) should have short wide traces to
is critical for reducing these effects.
minimize high frequency noise and voltage stress from
Ringing waveforms in a converter circuit can lead to inductive ringing. Surface mount components are pre-
device failure, excessive EMI, or instability. In many cases, ferred to reduce parasitic inductances from component
you can damp a ringing waveform with a series RC leads. Connect the drain of the main switch MOSFET
network across the offending device. In LT3800 applica- directly to the (+) plate of CIN, and connect the source of
tions, any ringing will typically occur on the switch node, the synchronous switch MOSFET directly to the (–) termi-
which can usually be reduced by placing a snubber across nal of CIN. This capacitor provides the AC current to the
the synchronous FET. Use of a snubber network, however, switch MOSFETs. Switch path currents can be controlled
should be considered a last resort. Effective layout prac- by orienting switch FETs, the switched inductor, and input
tices typically reduce ringing and overshoot, and will and output decoupling capacitors in close proximity to
eliminate the need for such solutions. each other.
Effective grounding techniques are critical for successful Locate the VCC and BOOST decoupling capacitors in close
DC/DC converter layouts. Orient power path components proximity to the IC. These capacitors carry the MOSFET
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18
LT3800
U U W U
APPLICATIO S I FOR ATIO
drivers’ high peak currents. Locate the small-signal compo- Locate the feedback resistors in close proximity to the
nents away from high frequency switching nodes (BOOST, LT3800 to minimize the length of the high impedance VFB
SW, TG, VCC and BG). Small-signal nodes are oriented on node.
the left side of the LT3800, while high current switching The SENSE– and SENSE+ traces should be routed to-
nodes are oriented on the right side of the IC to simplify gether and kept as short as possible.
layout. This also helps prevent corruption of the SGND
reference. The LT3800 packaging has been designed to efficiently
remove heat from the IC via the Exposed Pad on the
Connect the VFB pin directly to the feedback resistors in- backside of the package. The Exposed Pad is soldered to
dependent of any other nodes, such as the SENSE– pin. a copper footprint on the PCB. This footprint should be
The feedback resistors should be connected between the made as large as possible to reduce the thermal resistance
(+) and (–) terminals of the output capacitor (COUT). of the IC case to ambient air.
BOOST
+
SW
TG
SGND LT3800 SW
REFERRED
COMPONENTS
VCC
+ BG
SGND PGND
3800 AI05
VOUT
ISENSE
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19
LT3800
U
TYPICAL APPLICATIO S
6.5V-55V to 5V 10A DC/DC Converter with Charge Pump Doubler VCC Refresh and Current Limit Foldback
VIN
6.5V TO 55V C8 C2
+ 1µF
56µF
63V 100V
×2 X7R ×3
VIN BOOST
C1 1µF D1
16V X7R BAS19 M1
RA
NC TG Si7850DP
1M LT3800 ×2
C7
SHDN SW
1.5nF
R4 75k
CSS NC L1
R2 5.6µH
R1
100k 309k BURST_EN VCC
1% C3 1µF
1% 16V X7R M2 DS3
VFB BG Si7370DP B160
×2 ×2
VC PGND
R3
62k C10 R5 SENSE– SENSE+
C9 100pF 47k SGND RS
470pF 0.01Ω
D2
1N4148
VOUT
5V AT 10A
DS1
M3
C6 + C5
DS2 MBRO520L 10µF 220µF
MBRO520L 1/2 Si1555DL 6.3V ×2
X7R 3800 TA02a
M4
C4 1/2 Si1555DL C5: SANYO POSCAP 6TP220M
1µF L1: IHLP-5050FD-01
95 VIN = 24V 10
VIN = 13.8V
VIN = 48V
POWER LOSS (W)
90 8
EFFICIENCY (%)
85 VIN = 55V 6
80 POWER LOSS 4
VIN = 48V
POWER LOSS
75 VIN = 13.8V 2
70 0
0 2 4 6 8 10
IOUT (A)
3800 TA02b
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20
LT3800
U
TYPICAL APPLICATIO S
9V-38V to 3.3V 10A DC/DC Converter with Input UVLO and Burst Mode Operation
No Load I(VIN) = 100µA
VIN
9V TO 38V C8 C9
+ 100µF 4.7µF
50V 50V
×2 VIN BOOST X7R ×3
C5 1µF
RA 16V X7R M1
RB 1M NC TG Si7884DP
187k LT3800
SHDN SW
C1 1nF R4 39k
D1 L1
CSS NC
MBR520 3.3µH
R1 R2
100k C10 BURST_EN VCC
169k C4 1µF
1% 100pF DS1
1% 16V X7R M2
VFB BG SS14
Si7884DP
×2
VC PGND
R3 C3
82k 100pF SENSE– SENSE+
C2 SGND
330pF RS
0.01Ω
VOUT
3.3V AT 10A
C7 + C6
C6: SANYO POSCAP 4TPD470M 10µF 470µF
L1: IHLP-5050FD-01 6.3V ×2
X7R 3800 TA03a
88 5
POWER LOSS (W)
EFFICIENCY (%)
86 4
84 3
82 2
80 1
78 0
0.1 1 10
ILOAD (A)
3800 TA03b
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21
LT3800
U
TYPICAL APPLICATIO S
9V-38V to 5V 6A DC/DC Converter with All Ceramic Capacitors, Input UVLO,
Burst Mode Operation and Current Limit Foldback
VIN
9V TO 38V C8
22µF
×3
VIN BOOST
RA C5 1µF
C9 1nF 1M 10V X7R M1
NC TG Si7884DP
RB 187k LT3800
SHDN SW
C1 3.9nF R4 51k
D1 L1
CSS NC
BAS19 10µH
R1 R2
C6
49.9k 154k BURST_EN VCC
47pF C4 1µF
1% 1%
10V X7R M2 DS1
VFB BG
Si7884DP SS14
VC PGND
D2 R5 R3 C3
1N4148 47k 27k 100pF SENSE– SENSE+
C2 SGND RS
1nF
0.02Ω
VOUT
5V AT 6A
C7 3800 TA05a
C7: TDK C4532X5R0J107MT 100µF
C8: TDK C5750X7R1E226MT ×2
L1: IHLP-5050FD-01
90 2.40
POWER LOSS (W)
EFFICIENCY (%)
85 2.00
80 1.60
75 1.20
70 0.80
65 0.40
60 0
0.001 0.01 0.1 1 10
ILOAD (A)
3800 TA05b
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22
LT3800
U
PACKAGE DESCRIPTIO
FE Package
16-Lead Plastic TSSOP (4.4mm)
(Reference LTC DWG # 05-08-1663)
Exposed Pad Variation BC
4.90 – 5.10*
3.58 (.193 – .201)
(.141)
3.58
(.141)
16 1514 13 12 1110 9
6.60 ±0.10
2.94
4.50 ±0.10 (.116)
6.40
SEE NOTE 4 2.94
(.252)
(.116)
0.45 ±0.05 BSC
1.05 ±0.10
0.65 BSC
RECOMMENDED SOLDER PAD LAYOUT 1 2 3 4 5 6 7 8
1.10
4.30 – 4.50* (.0433)
(.169 – .177) 0.25 MAX
REF
0° – 8°
0.65
0.09 – 0.20 0.50 – 0.75 (.0256) 0.05 – 0.15
(.0035 – .0079) (.020 – .030) BSC (.002 – .006)
0.195 – 0.30
FE16 (BC) TSSOP 0204
(.0077 – .0118)
TYP
NOTE:
1. CONTROLLING DIMENSION: MILLIMETERS 4. RECOMMENDED MINIMUM PCB METAL SIZE
MILLIMETERS FOR EXPOSED PAD ATTACHMENT
2. DIMENSIONS ARE IN
(INCHES) *DIMENSIONS DO NOT INCLUDE MOLD FLASH. MOLD FLASH
3. DRAWING NOT TO SCALE SHALL NOT EXCEED 0.150mm (.006") PER SIDE
3800fb
23
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
LT3800
U
TYPICAL APPLICATIO
24V-48V to –12V 75W Inverting DC/DC Converter with VIN UVLO
VIN
24V TO 48V C10
+ C9 1µF
56µF 100V
R7 D2
63V X7R
1M D1 1N4148
×2 ×4 BAS19
R8 VIN BOOST
1M
M1
2N3906 NC TG
C2 1µF FDD3570
R3 LT3800
16V X7R L1 RS
1M SHDN SW 15µH
C1 1nF 0.01Ω
R6 R2 R1 200k
130k 174k CSS NC
C6
1% 1µF
BURST_EN VCC 16V C7
X7R 150pF DS1
VFB BG M2
FDD3570 100V B180
R5
20k VC PGND
1%
R4
SENSE– SENSE+
39k SGND
C3
470pF C8 C5
4.7µF
+ 270µF
C4 16V
16V
100pF SPRAGUE SP VOUT
X7R
–12V
3800 TA04a
L1: COEV MGPWL-00099 75W
90 10
VIN = 24V
POWER LOSS (W)
80 VIN = 48V 8
EFFICIENCY (%)
VIN = 36V
70 6
60 4
VIN = 36V LOSS
50 2
40 0
0.1 1 10
ILOAD (A)
3800 TA04b
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No RSENSE and ThinSOT are trademarks of Linear Technology Corporation.
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