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Actuatori Piezoelectrici
Actuatori Piezoelectrici
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PIEZOELECTRIC ACTUATORS
DESIGN & MEMS APPLICATIONS
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Piezoelectricity ?
1881
Inverse piezoelectricity
Gabriel Lippman
1880
Direct Piezoelectricity
Pierre and Jacques Curie
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𝐹
𝐹
𝑃
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Synthetic ceramics
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Polarisation
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Electro-mechanical conversion
Classic material
Piezo material
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Constitutive equations
Mechanical:
Electrical:
Piezoelectric constants:
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Constitutive equations
Strain tensor [-]
Stress tensor [ Pa ]
Stiffness tensor [ Pa ]
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Practically
http://www.physikinstrumente.com/en/
products/piezo_tutorial.php
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Example z
A F
P V
l0
y
Questions:
– Maximum displacement?
– Maximum force?
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Example
E
F [N]
A.N.:
Noliac NCE55: A = 2 cm2
Δl [nm] d33 = 670E-12 C/N l0 = 2 mm
sE33 = 21E-12 m2/N
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Questions
⇒ Stack actuators
- Thin layers, high 𝐸 even at low voltage
- Total displacement = N*the displacement of one layer
PI P-010.10:
D = 10 mm, l0 = 17 mm
Δlmax = 15 µm, Fmax = 1.8 kN @ 1000V
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Our enemies
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Some literature
Matériaux piézoélectriques
Caractérisation, modélisation et vibration
Michel Brissaud – PPUR 2007
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Travelling waves
SHINSEI USR60 Motor:
• Invented in 1982 (Sashida)
• Commercialized since 1987 by Shinsei
(www.shinsei-motor.com)
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Shinsei - USR60
Specifications
• Power: 5W
• Nominal speed: 100 rpm
• Nominal torque: 500 mNm
• Maximum torque: 1 Nm
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PCBmotor
www.PCBmotor.com
~ 0.20CHF/pce
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Standing wave
Physik instrumente
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Stepper
http://www.elliptec.com/
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NEXLINE N-216 de PI
Specifications :
Travel range: 20 mm
Max speed: 1 mm/s
Supply voltage : ± 250 V
Resolution : 0.03 nm / 5 nm
Dimensions : 51 x 72 x 115 [mm]
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Why MEMS?
2mm
Variables 100factor
Scale nm (α<1)
Dimension α
Area α2
Volume α3
Micro Electro Mechanical Systems
Frequency α-1
Thermal time constant α 100µm
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What MEMS?
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Why piezo ?
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• Frequency
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Gyroscope Panasonic
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Autofocus Lens
www.polight.com
www.polight.com
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Highlights
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Highlights
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DRAM cell
FeRAM cell
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FeRAM material
TI Toshiba
Fujitsu Matsushita Samsung Sony
Agilent Infineon
Technology
0.13µm 0.18µm 0.18µm 0.2µm 0.25µm 0.25µm
generation
Density 64Mbit 4Mbit 1Mbit 32Mbit 32Mbit 4Mbit
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Material
• Bulk ceramic
• Quartz
• Langasite (LGS)
• Lithium Niobate and Tantalum
• Thin Film
– Ferroelectrics (Poling)
• PZT : Polycrystalline lead Zirconium Titanate (Actuator)
• PMN-PT
– Piezoelectric semiconductor
• Groups III-V material (GaN, GaAs, AlN (CMOS compatible))
• ZnO, SiC (gas sensor)
– Relaxor material
• Pb (MgNb)O3, PbTiO3, PbZrO3
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Material properties
• k33, effective dij and eij
% 6.5 9 7 - 15
Tadigadapa & Al. 2009
2490 1770
160 160
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• MEMS technology
• pMEMS
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Ferroelectric properties
• Composition dependence
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Ferroelectric properties
• Composition dependence
• Orientation dependence
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• Piezo actuator
Casset & Al. 2013
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Replace EAP
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Highlights
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• Inkjet nose
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Highlights
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Example 1 : QCM
• Quartz Crystal Microbalance
– Thin piezo layer sandwiched between two electrodes
– Shear wave → Resonant frequency
Rabe & Al. 2003, Kao & Al. 2009
Formula
Resolution zeptograms 69
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Example 2 : IR device
• Infrared detector
– Ferroelectric material with pyroelectric properties (TGS, LiNbO3…)
– Modulated radiation absorption
– Photocurrent
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Example 3 : pMUT
• Piezoelectric Micromachined Ultrasonic Transducers
– Array of transmitters / receivers
– Flexural membrane motion
– Passive material & piezoelectric layer
– Sonar, medical imaging, non destructive testing…
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Example 4
• MEMS Image Projection display
Schroth & Al. 1999
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Example 4
• MEMS Image Projection display
Tani & Al. 2006
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Example 4
• MEMS laser scanners
Holmstrom et al., 2014
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Conclusions
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Perspectives
• Hysteresis, Creep, drift
• Deep understanding of poling
• Driving
• But…
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Any questions ?
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